Datasheet XN04390 Datasheet (Panasonic)

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Composite Transistors

XN04390

Silicon NPN epitaxial planer transistor (Tr1)
Silicon PNP epitaxial planer transistor (Tr2)

For digital circuit

For switching

■ Features

•

Two elements incorporated into one package.
(Transistor with built-in resistor)

• Reduction of the mounting area ad assembly cost by one half.

■ Basic Part Number of Element

•

UNR212X (UN212X) + UNR2223 (UN2223)

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector to base voltage V

Tr1 Collector to emitter voltage V

Collector current I

Collector to base voltage V

Tr2 Collector to emitter voltage V

Collector current I

Total power dissipation P

Overall Junction temperature T

Storage temperature T

CBO

CEO

C

CBO

CEO

C

T

j

stg

50 V

50 V

500 mA

−50 V

−50 V

−500 mA

300 mW

150 °C

−55 to +150 °C

+0.20

2.90

–0.05

1.9±0.1

(0.95)

(0.95)

654

+0.2

–0.3

+0.25

–0.05

2.8

1.50

132

+0.10

0.30

–0.05

+0.10

0.50

–0.05

10°

1: Collector (Tr1) 4: Collector (Tr2)
2: Base (Tr2) 5: Base (Tr1)
3: Emitter (Tr2) 6: Emitter (Tr1)
EIAJ: SC-74 Mini6-G1 Type Package

(0.65)

+0.2

–0.1

1.1

0 to 0.1

+0.3

–0.1

1.1

Unit: mm

+0.10

0.16

–0.06

5°

Marking Symbol: DY

Internal Connection

Tr1

6

5

4

Tr2

1

2

3

±0.2

0.4

Note) The part number in the parenthesis shows conventional part number.

1

XN04390 Composite Transistors

■ Electorical Caracteristics Ta = 25°C ± 3°C

• Tr1

Parameter Symbol Conditions Min Typ Max Unit

Collector to base voltage V

Collector to emitter voltage V

Collector cutoff current I

Emitter cutoff current I

Forward current transfer ratio h

Collector to emitter saturation voltage V

High-level output voltage V

Low-level output voltage V

Input resistance R

Resistance ratio R1/R

Transition frequency f

• Tr2

Parameter Symbol Conditions Min Typ Max Unit

Collector to base voltage V

Collector to emitter voltage V

Collector cutoff current I

Emitter cutoff current I

Forward current transfer ratio h

Collector to emitter saturation voltage V

High-level output voltage V

Low-level output voltage V

Input resistance R

Resistance ratio R1/R

Transition frequency f

CBO

CEO

CBO

I

CEO

EBO

FE

CE(sat)

OH

OL

T

CBO

CEO

CBO

I

CEO

EBO

FE

CE(sat)

OH

OL

T

IC = 10 µA, IE = 050 V

IC = 2 mA, IB = 050V

VCB = 50 V, IE = 01µA

VCE = 50 V, IB = 01µA

VEB = 6 V, IC = 01mA

VCE = 10 V, IC = 100 mA 60

IC = 100 mA, IB = 5 mA 0.25 V

VCC = 5 V, VB = 0.5 V, RL = 500 Ω 4.9 V

VCC = 5 V, VB = 3.5 V, RL = 500 Ω 0.2 V

1

2

−30% 10 +30% kΩ

0.8 1.0 1.2

VCB = 10 V, IE = −50 mA, f = 200MHz 200 MHz

IC = −10 µA, IE = 0 −50 V

IC = −2 mA, IB = 0 −50 V

VCB = −50 V, IE = 0 − 0.1 µA

VCE = −50 V, IB = 0 − 0.5 µA

VEB = −6 V, IC = 0 −2.0 mA

VCE = −10 V, IC = −100 mA 20

IC = −10 mA, IB = − 0.3 mA − 0.25 V

VCC = −5 V, VB = − 0.5 V, RL = 500 Ω−4.9 V

VCC = −5 V, VB = −3.5 V, RL = 500 Ω− 0.2 V

1

2

−30% 0.27 +30% kΩ

0.043 0.054 0.065

VCB = −10 V, IE = 50 mA, f = 200MHz 200 MHz

2

Composite Transistors XN04390

Common characterisitcs chart

PT  T

350

300

)

mW

(

250

T

200

150

100

Total power dissipation P

50

0

0406020 80 100 120 140 160

Ambient temperature Ta (°C

Characterisitcs chart of Tr1

a

)

IC  V

−240

−200

CE

)

mA
(

−160

C

−120

−80

Collector current I

−40

0

0 −12−2 −10−4 −8−6

Collector to emitter voltage VCE (V

24

20

(pF)

ob

16

12

Cob  V

Ta = 25°C

IB = −1.6 mA

−1.4 mA

−1.2 mA

−1.0 mA

− 0.8 mA

− 0.6 mA

− 0.4 mA

− 0.2 mA

CB

f = 1MHz

= 0

I

E

= 25°C

T

a

V

−100

CE(sat)

(V)

−30

CE(sat)

−10

−3

−1

−0.3

−0.1

−0.03

−0.01

Collector to emitter saturation voltage V

−1 −3

)

−100

−30

−10

(V)

−3

IN

−1

−10 −30 −100 −300 −1 000

Collector current IC (mA)

VIN  I

25°C

 I

Ta = 75°C

O

C

IC / IB = 10

−25°C

V

O

= −

T

25°C

a

=

0.2 V

hFE  I

240

200

FE

160

120

80

Forward current transfer ratio h

40

0

−1 −3

−10 −30 −100 −300 −1 000

C

Ta = 75°C

25°C

−25°C

Collector current IC (A

VCE = 10 V

)

8

4

Cllector output capacitance C

0

−3 −10 −30 −100

−1

Collector to base voltage VCB (V)

−0.3

Input voltage V

−0.1

−0.03

−0.01

−0.1 −0.3

Output current IO (mA)

−1 −3 −10 −30 −100

3

XN04390 Composite Transistors

Characterisitcs chart of Tr2

 V

I

C

240

200

160

(mA)

C

120

80

CE

1.0 mA

I

B

=

0.9 mA

Collector current I

40

0

012210486

Collector to emitter voltage VCE (V)

 V

C

ob

12

10

(pF)

ob

8

6

CB

T

a

=

0.8 mA

0.7 mA

0.6 mA

0.5 mA

0.4 mA

0.3 mA

0.2 mA

0.1 mA

f = 1MHz

= 0

I

E

= 25°C

T

a

25°C

V

100

30

(V)

10

CE(sat)

3

1

0.3

0.1

Collector to emitter V

0.03

0.01
13

CE(sat)

−25°C

10 30 100 300 1 000

Collrector current IC (mA)

10

000

000

3

1

000

A)

µ

(

300

O

100

IO  V

25°C

 I

IN

C

IC/I

= 75°C

T

a

VO = 5 V
T

a

B

=

= 25°C

hFE  I

10

200

VCE = 10V

FE

150

100

50

C

Ta = 75°C

25°C

−25°C

Forward current transfer ratio h

0

13

10 30 100 300 1 000

Collector current IC (mA)

VIN  I

100

(V)

IN

30

10

3

1

O

VO = 0.2 V
T

= 25°C

a

4

2

Collector output capacitance C

0

0.1 0.3

1 3 10 30 100

Collector to base voltage VCB (V)

30

Output current I

10

3

1

0.4

Input voltage VIN (V)

0.3

Input voltage V

0.1

0.03

1.41.21.00.80.6

0.01

0.1 0.3

1 3 10 30 100

Output voltage IO (mA)

4

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