Page 1
Composite Transistors
2.8
+0.2
–0.3
1.50.65±0.15 0.65±0.15
1
6
5
4
3
2
1.45±0.1
0.95 0.95
1.9±0.1
+0.25
–0.05
0.3
+0.1
–0.05
0.5
+0.1
–0.05
2.9
+0.2
–0.05
1.1
+0.2
–0.1
0.8
0.4±0.2
0 to 0.05
0.16
+0.1
–0.06
0.1 to 0.3
XN431L
Silicon NPN epitaxial planer transistor (Tr1)
Silicon PNP epitaxial planer transistor (Tr2)
For switching/digital circuits
Features
■
●
Two elements incorporated into one package.
(Transistors with built-in resistor)
●
Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
■
●
UN121L+UN111L
Unit: mm
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter Symbol Ratings Unit
Tr1
Tr2
Overall
Collector to base voltage
Collector to emitter voltage
Collector current I
Collector to base voltage
Collector to emitter voltage
Collector current I
Total power dissipation
Junction temperature
Storage temperature
V
CBO
V
CEO
C
V
CBO
V
CEO
C
P
T
T
j
T
stg
50 V
50 V
100 mA
–50 V
–50 V
–100 mA
300 mW
150 ˚C
–55 to +150 ˚C
1 : Collector (Tr1) 4 : Collector (Tr2)
2 : Base (Tr2) 5 : Base (Tr1)
3 : Emitter (Tr2) 6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: FI
Internal Connection
6
5
43
Tr1
Tr2
1
2
1
Page 2
Composite Transistors
Electrical Characteristics (Ta=25˚C)
■
●
Tr1
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V
Collector to emitter voltage V
Collector cutoff current
Emitter cutoff current I
Forward current transfer ratio h
Collector to emitter saturation voltage
Output voltage high level V
Output voltage low level V
Input resistance R
Resistance ratio R1/R
Transition frequency f
I
I
V
CBO
CEO
EBO
FE
T
CBO
CEO
CE(sat)
OH
OL
1
XN431L
IC = 10µA, IE = 0 50 V
IC = 2mA, IB = 0 50 V
VCB = 50V, IE = 0 0.1 µA
VCE = 50V, IB = 0 0.5 µA
VEB = 6V, IC = 0 2.0 mA
VCE = 10V, IC = 5mA 20
IC = 10mA, IB = 0.3mA 0.25 V
VCC = 5V, VB = 0.5V, RL = 1kΩ 4.9 V
VCC = 5V, VB = 2.5V, RL = 1kΩ 0.2 V
–30% 4.7 +30% kΩ
2
VCB = 10V, IE = –2mA, f = 200MHz 150 MHz
0.8 1.0 1.2
●
Tr2
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V
Collector to emitter voltage V
I
Collector cutoff current
Emitter cutoff current I
I
CBO
CEO
EBO
Forward current transfer ratio h
Collector to emitter saturation voltage
V
Output voltage high level V
Output voltage low level V
Input resistance R
Resistance ratio R1/R
Transition frequency f
T
CBO
CEO
FE
CE(sat)
OH
OL
1
IC = –10µA, IE = 0 –50 V
IC = –2mA, IB = 0 –50 V
VCB = –50V, IE = 0 – 0.1 µA
VCE = –50V, IB = 0 – 0.5 µA
VEB = –6V, IC = 0 –2.0 mA
VCE = –10V, IC = –5mA 20
IC = –10mA, IB = – 0.3mA – 0.25 V
VCC = –5V, VB = – 0.5V, RL = 1kΩ –4.9 V
VCC = –5V, VB = –2.5V, RL = 1kΩ – 0.2 V
–30% 4.7 +30% kΩ
2
0.8 1.0 1.2
VCB = –10V, IE = 2mA, f = 200MHz 150 MHz
2
Page 3
Composite Transistors XN431L
Common characteristics chart
— Ta
P
T
500
)
400
mW
(
T
300
200
100
Total power dissipation P
0
0 40 80 120 160
Ambient temperature Ta (˚C
Characteristics charts of Tr1
)
— V
I
C
240
200
)
mA
(
160
C
120
80
Collector current I
40
0
012210486
Collector to emitter voltage VCE (V
Cob — V
6
)
pF
(
5
ob
4
CE
CB
Ta=25˚C
IB=1.0mA
0.8mA
0.6mA
0.4mA
0.2mA
f=1MHz
=0
I
E
Ta=25˚C
100
)
V
(
CE(sat)
10
0.1
V
1
CE(sat)
Ta=75˚C
25˚C
–25˚C
— I
C
IC/IB=10
hFE — I
240
FE
200
160
120
80
40
Forward current transfer ratio h
Ta=75˚C
25˚C
C
VCE=10V
–25˚C
Collector to emitter saturation voltage V
0.01
13
)
100
)
10
V
(
IN
10 30 100 300 1000
Collector current IC (mA
IO — V
IN
VO=0.2V
Ta=25˚C
)
0
13
10 30 100 300 1000
Collector current IC (mA
)
3
2
1
Collector output capacitance C
0
3 10 30 100
1
Collector to base voltage VCB (V
1
Input voltage V
0.1
0.01
0.1 0.3
)
1 3 10 30 100
Output current IO (mA
)
3
Page 4
Composite Transistors XN431L
Characteristics charts of Tr2
— V
I
C
–240
–200
)
mA
(
–160
C
–120
–80
Collector current I
–40
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
Cob — V
6
)
pF
(
5
ob
4
CE
CB
Ta=25˚C
IB=–1.0mA
–0.8mA
–0.6mA
–0.4mA
–0.2mA
f=1MHz
=0
I
E
Ta=25˚C
–100
)
V
(
–30
CE(sat)
–10
–3
–0.3
–0.1
–0.03
V
–1
CE(sat)
Ta=75˚C
25˚C
— I
–25˚C
C
IC/IB=10
hFE — I
240
FE
200
160
120
80
40
Forward current transfer ratio h
Ta=75˚C
25˚C
C
VCE=–10V
–25˚C
Collector to emitter saturation voltage V
–0.01
–1 –3
)
–100
)
–10
V
(
IN
–10 –30 –100 –300 –1000
Collector current IC (mA
VIN — I
O
VO=–0.2V
Ta=25˚C
)
0
–1 –3
–10 –30 –100 –300 –1000
Collector current IC (mA
)
3
2
1
Collector output capacitance C
0
–3 –10 –30 –100
–1
Collector to base voltage VCB (V
–1
Input voltage V
–0.1
–0.01
–0.1 –0.3
)
–1 –3 –10 –30 –100
Output current IO (mA
)
4
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