Page 1
WTN9973
Surface Mount N-Channel
Enhancement Mode Power MOSFET
1
GATE
Features:
**SSuuppeerr hhiigghh ddeennssee cceellll ddeessiiggnn ffoorr llooww RR
RR
DDSS((OONN))
<<8800mmΩΩ@@VV
GGSS
==1100VV
**SSiimmppllee DDrriivvee RReeqquuiirreemmeenntt
**LLooww GGaattee CChhaarrggee
**SSOOTT--222233 PPaacckkaaggee
DDSS((OONN))
2,4
3
DRAIN
SOURCE
DRAIN CURRENT
3.9 AMPERES
DRAIN SOURCE VOLTAGE
60 VOLTAGE
4
1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
1
2
3
SOT-223
Maximum Ratings
((TTAA==2255℃℃ UUnnlleessss OOtthheerrwwiissee SSppeecciiffiieedd))
Rating Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
3
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation(TA=25 )
Maximum Junction-ambient3
Operating Junction and Storage Temperature Range
1,2
,VGS@10V(TA=25℃)
,VGS@10V(T
℃
A=70℃)
Device Marking
WTN9973=9973
V
V
I
I
DM
P
Rθ
TJ, T
DS
GS
D
60
V
±20
3.9
2.5
20
D
JA
stg
2.7 W
45 ℃/W
-55~+150 ℃
A
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Page 2
WTN9973
Electrical Characteristics(T
Characteristic Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage
V
=0,ID=250μA
GS
Gate-Source Threshold Voltage
V
DS=VGS,ID
Gate-Source Leakage Current
V
= ±20V
GS
Drain-Source Leakage Current(Tj=25℃)
=60V,VGS=0
V
DS
Drain-Source Leakage Current(T
=48V,VGS=0
V
DS
Drain-Source On-Resistance2
V
=10V,ID=3.9A
GS
=4.5V,ID=2A
V
GS
=250
μA
=70℃)
j
= 25℃ Unless otherwise noted)
A
V
(BR)DSS
V
GS(Th)
I
GSS
I
DSS
R
DS(on)
60 - -
1.0 - 3.0
- -
- - 1
- - 25
-
-
-
-
V
±100
80
100
nA
μA
mΩ
Forward Transconductance
V
=10V,ID=3.9A
DS
Dynamic
Input Capacitance
V
=0V,VDS=25V,f=1.0MHz
GS
Output Capacitance
=0V,VDS=25V,f=1.0MHz
V
GS
Reverse Transfer Capacitance
=0V,VDS=25V,f=1.0MHz
V
GS
g
fs
C
iss
C
oss
C
rss
- 3.5 - S
- 700 1120
- 80 -
- 50 -
pF
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Page 3
WTN9937
Switching
Turn-on Delay Time
VDS=30V,VGS=10V,ID=1A,RD=30Ω,RG=3.3Ω
2
td(on)
- 8 -
Rise Time
VDS=30V,VGS=10V,ID=1A,RD=30Ω,RG=3.3Ω
Turn-off Delay Time
VDS=30V,VGS=10V,ID=1A,RD=30Ω,RG=3.3Ω
Fall Time
VDS=30V,VGS=10V,ID=1A,RD=30Ω,RG=3.3Ω
Total Gate Charge
VDS=48V,VGS=4.5V,ID=3.9A
Gate-Source Charge
VDS=48V,VGS=4.5V,ID=3.9A
Gate-Source Change
=48V,VGS=4.5V,ID=3.9A
V
DS
2
Source-Drain Diode Characteristics
Forward On Voltage
VGS=0V,IS=3.9A
2
t
r
td (off)
t
f
Q
g
Q
gs
Q
gd
V
SD
- 4 ns
- 20 -
- 6 -
- 8 13
- 2 -
- 4 -
- - 1.2 V
nC
Reverse Recovery Time
VGS=0V,IS=3.9A,dl/dt=100A/μs
Reverse Recovery Charge
VGS=0V,IS=3.9A,dl/dt=100A/μs
Note: 1. Pulse width limited by max, junction temperature.
2. pulse width≦300μs, duty cycle≦2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 135℃/W when mounted on min, copper pad.
Q
T
rr
rr
- 28 - ns
- 35 - nC
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Page 4
WTN9973
40
°
T
C
=25
A
0 1 2 3 4 5 6 7 8
V
,DRAIN-TO-SOURCE VOLTAGE(V)
DS
,DRAIN CURRENT (A)
D
I
35
30
25
20
15
10
5
0
10V
6.0V
5.0V
4.5V
VG=3.0V
FIG.1 Typical Output Characteristics
95
90
85
ID = 3.9A
TA = 25°C
30
T
=160
25
20
15
10
,Drain Current (A)
D
I
A
°
C
10V
6.0V
5.0V
4.5V
VG=3.0V
5
0
0 1 2 3 4 5 6 7 8
V
,Drain-to-source Voltage(V)
DS
Fig.2 Typical Output Characteristics
2.5
ID = 3.9A
2.0
VG = 10V
1.5
Ds(on)
(mΩ)
80
Ds(on)
R
75
70
3 5 7 9 11
V
,Gate-to-source Voltage(V)
GS
Fig.3 On-Resistance v.s. Gate Voltage
4
3
2
(mΩ)
Ds(on)
R
1
Tj = 150°C
Tj = 25°C
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
V
,Source-to-Drain Voltage(V)
DS
Fig.5 Forward Characteristics of
Reverse Diode
1.0
Normalized R
0.5
0.0
-50 0 50 100 150
Tj ,Junction Temperature(°C)
Fig.4 Normalized OnResistance
2.5
2.0
1.5
(mΩ)
Ds(on)
R
1.0
0.5
-50 0 50 100 150
Tj ,Junction Temperature(°C)
Fig.6 Gate Threshold Voltage v.s.
Junction Temperature
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WTN9973
14
)V(egatloV ecruoS ot etaG ,
ID = 3.9A
12
VDS = 30V
10
VDS = 38V
VDS = 48V
8
6
4
S
G
V
2
0
0 4 8 12 16 20
QG , Total Gate Charge(nC)
Fig 7. Gate Charge Characteristics
100
10
)A(
1
D
I
0.1
TA = 25°C
Single Pulse
0.01
0.1 1 10 100 1000
V
, Drain-to-Source Voltage(V)
DS
Fig 9. Maximum Safe Operation Area
1ms
10ms
100ms
Is
DC
10000
1000
f = 1.0MHz
Ciss
Fp(C )
100
0
1 5 9 13 17 21 25 29
Coss
Crss
VDS, Drain-to-Source Voltage(V)
Fig 8. Typical Capacitance Characteristics
1
)
aj
θ
R(esnopseR lamrehT de
z
il
a
m
ro
N
Duty factor = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single pulse
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
P
DM
t
T
Duty factor = t / T
Peak Tj=P
DM
R
=135°C / W
θja
x R
+ T
θju
u
t, Pulse Width(s)
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
10%
V
GS
t
11. Switching Time Circuit
Fig
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d(on)
VG
Q
G
4.5V
Q
GS
t
r
t
d(off)tf
Fig.12 Gate Charge
Q
GD
Charge
Q
Waveform
5/6 19-Apr-05
Page 6
WTN9973
SOT-223 Outline Dimensions unit:mm
A
F
DIM
A
B
4
S
1 2
3
B
C
D
F
G
D
L
G
J
C
H
J
K
L
H
M
K
M
S
MILLIMETERS
MIN MAX
6.30 6.70
3.30 3.70
1.50 1.75
0.60 0.89
2.90 3.20
2.20 2.40
0.020 0.100
0.24 0.35
1.50 2.00
0.85 1.05
0 10
6.70 7.30
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