Page 1
WTN9575
Lead(Pb)-Free
P b
Surface Mount P-Channel
Enhancement Mode Power MOSFET
Features:
* Super high dense cell design for low RDS(ON)
RDS(ON) < 90mΩ @ V
* Simple Drive Requirement
* Lower On-Resistance
* Fast Switching
GS
= -10V
1
GATE
2,4 DRAIN
3
SOURCE
DRAIN CURRENT
-4.0 AMPERES
DRAIN SOURCE VOLTAGE
-60 VOLTAGE
1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
1
2
4
3
SOT-223
Maximum Ratings (TA=25°C Unless Otherwise Specified)
Rating Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3 ,VGS@10V(TA=25°C)
,VGS@10V(TA=70°C)
Pulsed Drain Current
Total Power Dissipation(TA=25°C)
Maximum Junction-ambient
Operating Junction Temperature Range
Storage Temperature Range
1
3
R
V
V
I
T
DS
GS
I
D
DM
P
D
θJA
T
J
stg
-60 VV
±25
-4.0
-3.2
-20
3.0 W
45 °C/W
+150
-55 ~ +150
A
A
°C
°C
Device Marking
WTN9575 = 9575
WEITRON
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Page 2
WTN9575
Electrical Characteristics(T
Characteristic Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage
V
= 0, ID = -250µA
GS
Gate-Source Threshold Voltage
V
= V
DS
Gate-Source Leakage Current
V
= ± 25V
GS
Drain-Source Leakage Current(Tj=25°C)
V
= -60A, V
DS
Drain-Source Leakage Current(T
V
= -48V, V
DS
Drain-Source On-Resistance
V
= -10A, ID = -4.0A
GS
V
= -4.5A, ID = -3.0A
DS
GS, ID
= -250µA
= 0
GS
= 0
GS
2
=70°C)
j
= 25°C Unless otherwise noted)
A
V
(BR)DSS
V
GS(Th)
I
GSS
I
DSS
-60
-1.0 -
- -
-
-
-
R
DS(ON)
-
-
-
-
-3.0
±100
-1
V
V
nA
μA
-
-
-
-25
90
120
mΩ
Forward Transconductance
V
= -10A, ID = -4.0A
DS
Dynamic
Input Capacitance
VGS = 0V, VDS = -25V, f = 1.0MHz
Output Capacitance
VGS = 0V, VDS = -25V, f = 1.0MHz
Reverse Transfer Capacitance
VGS = 0V, VDS = -25V, f = 1.0MHz
g
fs
C
iss
C
oss
C
rss
- -
-
-
-
7
1745 2790
165
125
-
-
S
pF
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Page 3
WTN9575
Switching
Turn-on Delay Time
VDS=-30V,VGS=-10V,ID=-1A,RD=30Ω,RG=3.3Ω
2
t
d(on)
- 12 -
Rise Time
VDS=-30V,VGS=-10V,ID=-1A,RD=30Ω,RG=3.3Ω
Turn-o Delay Time
VDS=-30V,VGS=-10V,ID=-1A,RD=30Ω,RG=3.3Ω
Fall Time
VDS=-30V,VGS=-10V,ID=-1A,RD=30Ω,RG=3.3Ω
Total Gate Charge
2
VDS=-48V,VGS=-4.5V,ID=-4.0A
Gate-Source Charge
VDS=-48V,VGS=-4.5V,ID=-4.0A
Gate-Drain Change
VDS=-48V,VGS=-4.5V,ID=-4.0A
Source-Drain Diode Characteristics
Forward On Voltage
VGS=0V, IS=-2.0A
2
t
t
d(o)
t
Q
Q
gs
Q
gd
V
SD
r
- 5 -
ns
- 68 -
f
g
- 32 -
- 18 28
- 5.0 -
- 7.0 -
- -
-1.2
nC
V
Reverse Recovery Time
VGS=0V, IS=-4.0A, dl/dt=100A/μs
Reverse Recovery Charge
VGS=0V, IS=-4.0A, dl/dt=100A/μs
Q
T
rr
rr
-
- -
56
146
-
Note:
1. Pulse width limited by max, junction temperature.
2. Pulse width ≤ 300μs, duty cycle ≤ 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 125°C/W when mounted on Min, copper pad.
ns
nC
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Page 4
WTN9575
Characteristics Curve
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Page 5
WTN9575
Duty factor = 0.5
0.2
0.1
0.05
0.02
0.01
Single pulse
P
DM
t
T
Duty factor = t / T
Peak Tj=PDM x R
R
=135°C / W
θ ja
+ T
θ ju
u
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Page 6
WTN9575
SOT-223 Outline Dimensions
A
F
4
S
1 2
L
G
H
3
B
D
C
M
unit:mm
MILLIMETERS
DIM
A
B
C
D
F
G
H
J
J
K
L
K
M
S
MIN MAX
6.30 6.70
3.30 3.70
1.50 1.75
0.60 0.89
2.90 3.20
2.20 2.40
0.020 0.100
0.24 0.35
1.50 2.00
0.85 1.05
0 10
6.70 7.30
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