Datasheet wtn9435 Datasheet

WTN9435

Lead(Pb)-Free

P b

Surface Mount P-Channel

Enhancement Mode Power MOSFET

Features:

* Super high dense cell design for low RDS(ON)

(ON) < 50mΩ @ V

R

DS

* Simple Drive Requirement * Lower On-Resistance * Fast Switching

GS

= -10V

1

GATE

2,4 DRAIN

3

SOURCE

DRAIN CURRENT

-6.0 AMPERES

DRAIN SOURCE VOLTAGE

-30 VOLTAGE

1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

1

2

4

3

SOT-223

Maximum Ratings

((TTAA==2255℃℃ UUnnlleessss OOtthheerrwwiissee SSppeecciiffiieedd))

Rating Symbol Value Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current3 ,VGS@10V(TA=25°C)

,VGS@10V(TA=70°C)

Pulsed Drain Current

1

Total Power Dissipation(TA=25°C)

Maximum Junction-ambient

3

Operating Junction and Storage Temperature Range

V

I

DM

P

R

TJ,T

DS

GS

I

D

θJA

stg

-30 VV

±25

-6.0

-4.8

-20

2.7 W

45 °C/W

-55 ~ +150

A

°C

Device Marking

WTN9435 = 9435

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WTN9435

Electrical Characteristics(T

Characteristic Symbol Min Typ Max Unit

Static

Drain-Source Breakdown Voltage

V

= 0, ID = -250µA

GS

Gate-Source Threshold Voltage

V

= V

DS

Gate-Source Leakage Current

V

= ± 25V

GS

Drain-Source Leakage Current(Tj=25°C)

V

= -30A, V

DS

Drain-Source Leakage Current(T

V

= -24V, V

DS

Drain-Source On-Resistance

V

= -10A, ID = -5.3A

GS

V

= -4.5A, ID = -4.2A

DS

GS, ID

= -250µA

= 0

GS

= 0

GS

2

=70°C)

j

= 25℃ Unless otherwise noted)

A

V

(BR)DSS

V

GS(Th)

I

GSS

I

DSS

-30

-1.0 -

- -

-

R

DS(ON)

-

-3.0

±100

-1

-25

50

100

V

nA

μA

mΩ

Forward Transconductance

V

= -10A, ID = -5.3A

DS

Dynamic

Input Capacitance VGS = 0V, VDS = -15V, f = 1.0MHz

Output Capacitance VGS = 0V, VDS = -15V, f = 1.0MHz

Reverse Transfer Capacitance VGS = 0V, VDS = -15V, f = 1.0MHz

g

fs

C

iss

C

oss

C

rss

- -

-

10

507 912

222

158

-

S

pF

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WTN9435

Switching

Turn-on Delay Time VDS=-15V,VGS=-10V,ID=1A,RD=15Ω,RG=6Ω

2

t

d(on)

- 11 -

Rise Time VDS=-15V,VGS=-10V,ID=1A,RD=15Ω,RG=6Ω

Turn-oﬀ Delay Time VDS=-15V,VGS=-10V,ID=1A,RD=15Ω,RG=6Ω

Fall Time VDS=-15V,VGS=-10V,ID=1A,RD=15Ω,RG=6Ω

Total Gate Charge

2

VDS=-24V,VGS=-4.5V,ID=-5.3A

Gate-Source Charge VDS=-24V,VGS=-4.5V,ID=-5.3A

Gate-Drain Change VDS=-24V,VGS=-4.5V,ID=-5.3A

Source-Drain Diode Characteristics

Forward On Voltage VGS=0V, IS=-2.3A

2

t

d(oﬀ)

t

Q

gs

Q

gd

V

SD

r

- 8 - ns

- 25 -

f

g

- 17 -

- 9.2 16

- 2.8 -

- 5.2 -

- -

-1.2

nC

V

Reverse Recovery Time VGS=0V, IS=-5.3A, dl/dt=100A/μs

Reverse Recovery Charge VGS=0V, IS=-5.3A, dl/dt=100A/μs

Note:

1. Pulse width limited by max, junction temperature.

2. Pulse width ≤ 300μs, duty cycle ≤ 2%.

3. Surface mounted on 1 in

2

copper pad of FR4 board; 120°C/W when mounted on Min, copper pad.

Q

T

rr

-

- -

29

20

-

ns

nC

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WTN9435

30

-10V

25

)A( TNERRUC NIARD,

20

°

T

C

15

10

D

-I 5

0

0 1 2 3 4 5

-V

DS

=25

A

,DRAIN-TO-SOURCE VOLTAGE(V)

-8.0V

-6.0V

-5.0V

VG= -4.0V

FIG.1 Typical Output Characteristics

110

100

90

80

)Ωm(

70

) n

60

o( s D

R

50

40

ID = -5.3A

TA = -25°C

30

°

25

T

A

=150

C

)A( tnerruC niarD,

20

VG=-4.0V

15

10

D

-I

5

0

0 1 2 3 4 5 6 7

-V

,Drain-to-source Voltage(V)

DS

Typical Output Characteristics

Fig.2

1.8

ID = -5.3A

1.6

VG = -10V

)no(sD

1.4

R dezil

1.2

amro

1.0

N

0.8

-10V

-8.0V

-6.0V

-5.0V

30

3 4 5 6 7 8 9 10 11

-V

,Gate-to-source Voltage(V)

GS

Fig.3 On-Resistance v.s. Gate Voltage

100

10

)A(

Tj = 150°C

1

S

-I

0.1

0.01

0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5

V

,Source-to-Drain Voltage(V)

DS

Tj = 25°C

Fig.5 Forward Characteristics of Reverse Diode

0.0

-50 0 50 100 150

Tj ,Junction Temperature(°C)

Fig.4 Normalized OnResistance

4

3

)V(

2

GS(th)

-V

1

0

-50 0 50 100 150

Tj ,Junction Temperature(°C)

Fig.6 Gate Threshold Voltage v.s. Junction

Temperature

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WTN9435

14

)V(egatloV ecruoS ot etaG ,

-V

12

10

S G

ID = -5.3A

VDS = -24V

8

6

4

2

0

0 2 4 6 8 10 12 14 16 18

QG , Total Gate Charge(nC)

Fig 7. Gate Charge Characteristics

100

10

)A(

1

D

-I

0.1

TA = 25°C

Single Pulse

0.01

0.1 1 10 100

-V

, Drain-to-Source Voltage(V)

DS

Fig 9. Maximum Safe Operation Area

1ms

10ms

100ms

Is

DC

10000

1000

f = 1.0MHz

Ciss

Fp(C )

Coss

100

0

1 5 9 13 17 21 25 29

Crss

-VDS, Drain-to-Source Voltage(V)

Fig 8. Typical Capacitance Characteristics

1

)

aj

θ

R(esnopseR lamrehT de

0.01

z

il a m

ro N

0.001

Duty factor = 0.5

0.2

0.1

0.05

0.02

0.01

Single pulse

0.0001 0.001 0.01 0.1 1 10 100 1000

P

DM

t

T

Duty factor = t / T Peak T

=PDM x R

j

R

=120°C / W

ja

θ

+ T

ju

a

θ

t, Pulse Width(s)

Fig 10. Effective Transient Thermal Impedance

V

DS

90%

10% V

GS

t

11. Switching Time Circuit

Fig

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d(on)

VG

Q

G

-4.5V

Q

GS

t

r

t

d(off)tf

Fig.12 Gate Charge

Q

GD

Charge

Q

Waveform

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WTN9435

SOT-223 Outline Dimensions unit:mm

A F

DIM

A B

4

S

1 2

3

B

C D

F

G

D

L

G

J

C

H

J

K

L

H

M

K

M S

MILLIMETERS

MIN MAX

6.30 6.70

3.30 3.70

1.50 1.75

0.60 0.89

2.90 3.20

2.20 2.40

0.020 0.100

0.24 0.35

1.50 2.00

0.85 1.05 0 10

6.70 7.30

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