Page 1
WTL2602
08-Sep-05
Lead(Pb)-Free
P b
N-Channel Enhancement
Mode Power MOSFET
Features:
*Super High Dense Cell Design For Low R
R
DS(ON)
*Rugged and Reliable
*Capable of 2.5V Gate Drive
*Simple Drive Requirement
*SOT-26 Package
< 34mΩ@VGS=4.5V
GATE
DS(ON)
1,2,5,6
DRAIN
DRAIN CURRENT
6.3 AMPERES
DRAIN SOURCE VOLTAGE
20 VOLTAGE
3
SOURCE
4
6
5
4
1
2
3
SOT-26
Maximum Ratings (T
=25˚C Unless Otherwise Specified)
A
Rating Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, [email protected], TA=25˚C
Pulsed Drain Current
1,2
TA=70˚C
Total Power Dissipation(TA=25˚C)
Maximum Junction-ambient
Operating Junction and Storage Temperature Range
Device Marking
V
V
I
DM
P
R
θJA
TJ,T
I
DS
GS
D
D
stg
20
±12
6.3
5
30
2 W
62.5 ˚C/W
-55~+150
˚C
V
A
WTL2602=2602
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Electrical Characteristics(T
Characteristic Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage
VGS=0,ID=250μA
Gate-Source Threshold Voltage
VDS=VGS,ID=250μA
Gate-Source Leakage current
VGS=±12V
Drain-Source Leakage Current(Tj=25˚C)
VDS=20V,VGS=0
Drain-Source
VDS=16V,VGS=0
Drain-Source On-Resistance
VGS=10V,ID=5.5A
VGS=4.5V,ID=5.3A
VGS=2.5V,ID=2.6A
VGS=1.8V,ID=1.0A
Leakage Current(Tj=55˚C)
= 25℃ Unless otherwise noted)
A
BV
V
DSS
GS(Th)
I
GSS
I
DSS
R
DS(on)
20 - -
0.5
- -
- - 1
- - 10
-
-
-
-
- -
±100
-
-
-
-
30
34
50
90
V
nA
μA
mΩ
Forward Transconductance
VDS=5V,ID=5.3A
Dynamic
Input Capacitance
VGS=0V,VDS=15V,f=1.0MHz
Output Capacitance
VGS=0V,VDS=15V,f=1.0MHz
Reverse Transfer Capacitance
VGS=0V,VDS=15V,f=1.0MHz
gfs - 13
C
iss
C
oss
C
rss
- 603 1085
- 144 -
- 111 -
- S
pF
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WTL2602
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Switching
Turn-on Delay Time
VDS=15V, VGS=10V, ID=1A, RD=15Ω, RG=2Ω
2
t
d(on)
- 6 -
Rise Time
VDS=15V, VGS=10V, ID=1A, RD=15Ω, RG=2Ω
Turn-off Delay Time
VDS=15V, VGS=10V, ID=1A, RD=15Ω, RG=2Ω
Fall Time
VDS=15V, VGS=10V, ID=1A, RD=15Ω, RG=2Ω
Total Gate Charge
2
VDS=10V,VGS=4.5V,ID=5.3A
Gate-Source Charge
VDS=10V,VGS=4.5V,ID=5.3A
Gate-Source Change
VDS=10V,VGS=4.5V,ID=5.3A
t
d(off)
Q
Q
Q
t
r
- 14 ns
- 18.4 -
t
f
g
gs
gd
- 2.8 -
- 8.7 16
- 1.5 -
- 3.6 -
nC
Source-Drain Diode Characteristics
Forward On Voltage
VGS=0V,IS=1.2A
Reverse Recovery Time
VGS=0V,IS=5A,dl/dt=100A/µs
Reverse Recovery Charge
VGS=0V,IS=5A,dl/dt=100A/µs
Note: 1. Pulse width limited by max. junction temperature.
2. Pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 156˚C/W when mounted on Min. copper pad.
2
V
SD
T
rr
Q
rr
- - 1.2 V
- 16.8 - ns
- 11 - nC
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WTL2602
80
°
T
C
=25
A
60
)A( TNERRUC NIARD,
40
20
D
I
0
0 1 2 3 4 5 6 7
V
,DRAIN-TO-SOURCE VOLTAGE(V)
DS
FIG.1 Typical Output Characteristics
100
ID = 1.0A
80
)Ωm(
60
)
n
o(
s
D
R
40
TA = 25°C
5.0V
4.5V
4.0V
VG=2.5V
50
40
°
T
C
=150
A
)A( tnerruC niarD,
30
20
D
I
10
0
0 1 2 3 4 5 6 7 8
V
,Drain-to-source Voltage(V)
DS
Typical Output Characteristics
Fig.2
1.8
ID = 5.3A
1.6
VG = 4.5V
)no(sD
1.4
R dezil
1.2
amro
1.0
N
0.8
5.0V
4.5V
4.0V
VG=2.5V
20
1 2 3 4 5 6 7 8 9 10 11
V
,Gate-to-source Voltage(V)
GS
Fig.3 On-Resistance v.s. Gate Voltage
10
1.0
)A(
Tj = 150°C
S
I
0.1
0.01
0 0.4 0.8 1.2 1.6
V
,Source-to-Drain Voltage(V)
DS
Tj = 25°C
Fig.5 Forward Characteristics of
Reverse Diode
0.6
-50 0 50 100 150
Tj ,Junction Temperature(°C)
Fig.4 Normalized OnResistance
1.6
1.4
1.2
)
V(
1.0
)
h
t(
S
G
0.8
V
0.6
0.4
0.2
-50 0 50 100 150
Tj ,Junction Temperature(°C)
Fig.6 Gate Threshold Voltage v.s.
Junction
Temperature
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WTL2602
14
12
(V)
ge
a
10
olt
V
e
, Gate to Sourc
SG
ID = 5.3A
VDS = 16V
8
6
4
V
2
0
0 5 10 15 20 25
QG , Total Gate Charge(nC)
Fig 7. Gate Charge Characteristics
100
10
)A(
1
D
I
0.1
TA = 25°C
Single Pulse
0.01
0.1 1 10 100
V
, Drain-to-Source Voltage(V)
DS
Fig 9. Maximum Safe Operation Area
1ms
10ms
100ms
Is
DC
1000
100
Fp(C )
0
1 5 9 13 17 21 25 29
f = 1.0MHz
Ciss
Coss
Crss
VDS, Drain-to-Source Voltage(V)
Fig 8. Typical Capacitance Characteristics
1
)
aj
θ
R(esnopseR lamrehT de
0.01
z
il
a
m
ro
N
0.001
Duty factor = 0.5
0.2
0.1
0.1
0.05
P
DM
0.01
Single pulse
0.0001 0.001 0.01 0.1 1 10 100 1000
t
T
Duty factor = t / T
Peak Tj=P
x R
DM
R
=156°C / W
θja
+ T
θja
u
t, Pulse Width(s)
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
10%
V
GS
t
11. Switching Time Circuit
Fig
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d(on)
V
G
Q
G
4.5V
Q
GS
t
r
t
d(off)tf
Fig.12 Gate Charge
Q
GD
Charge
Q
Waveform
5/6 08-Sep-05
Page 6
WTL2602
08-Sep-05
SOT-26 Outline Dimension
A
G
B
C
Top View
Front View
D
L
H
E
F1
J
Side View
Unit:mm
SOT-26
Dim
A
B
C
D
E
F
F1
G
I
F
K
H
I
J
K
L
Min Max
2.70 3.10
2.60
1.40 1.80
0.30 0.55
0.00
0˚
0.08
1.90 REF
1.20 REF
0.12 REF
0.37 REF
0.60 REF
0.95 REF
3.00
0.10
10˚
0.25
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