Datasheet wtc1333 Datasheet

Surface Mount P-Channel

17-Jun-05

Enhancement Mode MOSFET

1

GATE

3

DRAIN

WTC1333

DRAIN CURRENT

-550m AMPERES

DRAIN SOURCE VOLTAGE

-20 VOLTAGE

Features:

*Super High Dense Cell Design For Low RDS(ON) R

<600mΩ@VGS=-10V

DS(ON)

*Simple Gate Drive *Small package Outline *Fast Switching Speed

*SOT-23 Package

Description

*Designer with best combination of fast switching *Low on-resistance

*Cost-effectiveness

Maximum Ratings(T

=25 C Unless Otherwise Specified)

A

Rating Symbol Value Unit

2

SOURCE

3

1

2

SOT-23

Drain-Source Voltage

Gate-Source Voltage

1,2

3

,(T ,(T

=25˚C)

A

=70˚C)

A

Continuous Drain Current

Pulsed Drain Current

Total Power Dissipation(TA=25˚C)

Maximum Thermal Resistace Junction-ambient

Operating Junction and Storage Temperature Range

Device Marking

WTC1333=1333

V

DS

V

GS

I

D

I

2.5

DM

P

D

R

θJA

TJ,Tstg

-20

±12

-550

-440

1.0

125

- 55~+150 ˚C

V

mA

W

˚C/W

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WTC1333

Electrical Characteristics(T

Characteristic Symbol Min Typ Max Unit

Static

Drain-Source Breakdown Voltage VGS=0,ID=-250μA

Gate-Source Threshold Voltage VDS=VGS,ID=-250μA

Gate-Source Leakage current VGS=±12V

Drain-Source Leakage Current(Tj=25˚C) VDS=-20V,VGS=0 Drain-Source VDS=-16V,VGS=0

Drain-Source On-Resistance VGS=-10V,ID=-550mA VGS=-4.5V,ID=-500mA VGS=-2.5V,ID=-300mA

Leakage Current(Tj=70˚C)

= 25℃ Unless otherwise noted)

A

BV

V

DSS

GS(Th)

I

GSS

I

DSS

R

DS(on)

-20 - -

-0.5 - -1.2

- -

- - -1

- - -10

-

V

±100

600 800

1000

nA

μA

mΩ

Forward Transconductance VDS=-5V,ID=-550mA

Dynamic

Input Capacitance VGS=0V,VDS=-10V,f=1.0MHz

Output Capacitance VGS=0V,VDS=-10V,f=1.0MHz

Reverse Transfer Capacitance VGS=0V,VDS=-10V,f=1.0MHz

gfs - 1 - S

C

iss

C

oss

C

rss

- 66 105.6

- 25 -

- 20 -

pF

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WTC1333

Switching

Turn-on Delay Time VDS=-10V,VGS=-5V,ID=-500mA,RD=20Ω,RG=3.3Ω

2

t

d(on)

- 5 -

Rise Time VDS=-10V,VGS=-5V,ID=-500mA,RD=20Ω,RG=3.3Ω

Turn-off Delay Time VDS=-10V,VGS=-5V,ID=-500mA,RD=20Ω,RG=3.3Ω

Fall Time VDS=-10V,VGS=-5V,ID=-500mA,RD=20Ω,RG=3.3Ω

Total Gate Charge

2

VDS=-16V,VGS=-4.5V,ID=-500mA

Gate-Source Charge VDS=-16V,VGS=-4.5V,ID=-500mA

Gate-Source Change VDS=-16V,VGS=-4.5V,ID=-500mA

t

d(off)

t

Q

gd

r

- 8 ns

- 10 -

f

g

gs

- 2 -

- 1.7 2.7

- 0.3 -

nC

- 0.4 -

Source-Drain Diode Characteristics

Forward On Voltage VGS=0V,IS=-300mA

Note: 1. Pulse width limited by Max, junction temperature.

2. Pulse width ≤ 300μs, duty cycle ≤ 2%.

3. Surface mounted on FR4 board, t ≤ 10sec.

2

V

SD

- - -1. 2 V

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WTC1333

2.5

2.0

)A( TNERRUC NIARD,

1.5

1.0

D

I-

0.5

0.0

0.0 0.5 1.0 1.5 2.0 2.5

°

T

C

=25

A

-V

,DRAIN-TO-SOURCE VOLTAGE(V)

DS

FIG.1 Typical Output Characteristics

1400

1200

1000

)Ωm(

800

) n o(

s D

R

600

400

ID = -0.3A

TA = 25˚C

-5.0V

-4.5V

-3.5V

-2.5V

VG=-2.0V

2.5

2.0

)A( tnerruC niarD,

1.5

1.0

D

I

0.5

0.0

0.0 0.5 1.0 1.5 2.0 2.5

Fig.2

1.6

°

T

C

=150

A

V

,Drain-to-source Voltage(V)

DS

Typical Output Characteristics

ID = -0.5A

1.4

VG = -4.5V

)no(sD

1.2

R dezil

amro

1.0

N

0.8

-5.0V

-4.5V

-3.5V

-2.5V

VG= -2.0V

200

1 4 7 10

-V

,Gate-to-source Voltage(V)

GS

Fig.3 On-Resistance v.s. Gate Voltage

1.0

0.8

0.6

)A(

Tj = 150˚C

0.4

S

I-

0.2

0.0

0 0.2 0.4 0.6 0.8 1 1.2

-V

,Source-to-Drain Voltage(V)

DS

Tj = 25˚C

Fig.5 Forward Characteristics of Reverse Diode

0.6

-50 0 50 100 150

Tj ,Junction Temperature(˚C)

Fig.4 Normalized OnResistance

2.0

) V(

1.5

) h

t( S G

V- de

zi

1.0

l amroN

0.5

0.0

-50 0 50 100 150

Tj ,Junction Temperature(˚C)

Fig.6 Gate Threshold Voltage v.s. Junction

Temperature

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WTC1333

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12

(V)

10

ge a

olt V

8

e

6

4

, Gate to Sourc

SG

ID = -0.5A

VDS = -16V

V-

2

0

0 1 2 3 4

QG , Total Gate Charge(nC)

Fig 7. Gate Charge Characteristics

10

1

)A(

D

I-

0.1

TA = 25˚C

Single Pulse

0.01

0.1 1 10 100

-V

, Drain-to-Source Voltage(V)

DS

Fig 9. Maximum Safe Operation Area

100us

1ms

10ms

100ms

DC

100

f = 1.0MHz

Ciss

Fp(C )

Coss

Crss

10

1 3 5 7 9 11

-VDS, Drain-to-Source Voltage(V)

Fig 8. Typical Capacitance Characteristics

1

)

aj

Duty factor = 0.5

θ

R(esnopseR lamrehT de

0.2

0.1

z

il a m

ro N

0.01

0.05

P

DM

t

T

x R

θ ja

+ T

a

0.02

0.01

Duty factor = t / T Peak Tj=P

Single pulse

0.0001 0.001 0.01 0.1 1 10 100 1000

t, Pulse Width(s)

Fig 10. Effective Transient Thermal Impedance

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V

DS

90%

10% V

GS

11. Switching Time Circuit

Fig

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t

d(on)

VG

Q

G

-4.5V

Q

GS

t

r

t

d(off)tf

Q

GD

Charge

Q

Fig.12 Gate Charge Waveform

WTC1333

6/6

17-Jun-05

SOT-23 Outline Dimension

A

B

TOP VIEW

D

E

G

H

C

K

L

J

Unit:mm

SOT-23

Dim

A B C D E

G H

J

K L

M

Min

0.35

1.19

2.10

0.85

0.46

1.70

2.70

0.01

0.89

0.30

0.076

Max

0.51

1.40

3.00

1.05

1.00

2.10

3.10

0.13

1.10

0.61

0.25

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