Page 1
.025" NPN Phototransistors
Molded Lensed Lateral Package
PACKAGE DIMENSIONS inch (mm)
VTT7122, 7123, 7125
CASE 7 LATERAL
CHIP TYPE: 25T
PRODUCT DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
(@ 25°C unless otherwise noted)
A small area high speed NPN silicon phototransistor
mounted in a lensed, side looking, transparent plastic,
transfer molded package. These devices are spectrally
and mechanically matched to the VTE717x series of
IREDs.
Maximum Tempe r ature s
Stor age Temperat u r e: -40°C t o 85°C
Operating Temp er a t ure: -40°C t o 85°C
Continuous Power Dissipation: 50 mW
Derate a bove 30°C: 0.91 mW/°C
Maximum Current: 25 mA
Lead Soldering Temperature: 260°C
(1.6 mm from case, 5 sec. max.)
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also typical curves, pages 91-92)
Light Current Dark Current
l
Part N umber
mA
Min. Max.
VTT7122 1.0 — 100 (5) 100 10 30 5.0 0.25 2.0 ±36°
VTT7123 2.0 — 100 (5) 100 10 30 5.0 0.25 2.0 ±36°
VTT7125 4.5 — 100 (5) 100 10 30 5.0 0.25 2.0 ±36°
C
fc (mW/cm
V
= 5.0 V
CE
H
2
)
(nA)
Max.
l
CEO
H = 0
V
CE
(Volts)
Collector
Breakdown
V
BR(CEO)
l
= 100 µA
C
H = 0
Volts, Min. Volts, Min. Volts, Max. µsec, Typ. Typ.
Emitter
Breakdown
V
BR(ECO)
lE = 100 µA
H = 0
Saturation
Voltage
V
CE(SAT)
lC = 1.0 mA
H = 400 fc
Rise/Fall Time
tR/t
F
lC = 1.0 mA
R
= 100 Ω
L
Angular
Response θ
1/2
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
97
Loading...