Page 1
© 2000 IXYS All rights reserved
1 - 4
I
D25
= 35 A
V
DSS
= 500 V
R
DS(on)
= 0.12 W
Symbol Test Conditions Maximum Ratings
V
DSS
TVJ= 25°C to 150°C 500 V
V
DGR
TVJ= 25°C to 150°C; RGS = 10 kW 500 V
V
GS
Continuous ±20 V
I
D
TS= 85°C24A
I
D
TS= 25°C35A
I
DM
TS= 25°C, tp = ① 95 A
P
D
TS= 85°C 170 W
I
S
VGS= 0 V, TS = 25°C24A
I
SM
VGS= 0 V, TS = 25°C, tp = ① 95 A
V
RRM
600 V
I
dAV
TS= 85°C, rectangular d = 0.5 40 A
I
FSM
TVJ= 45°C, t = 10 ms (50 Hz) 300 A
t = 8.3 ms (60 Hz) 320 A
TVJ= 150°C,t = 10 ms (50 Hz) 260 A
t = 8.3 ms (60 Hz) 280 A
P TS= 85°C36W
V
RRM
800 V
I
dAV
TS= 85°C, sinus 180° 40 A
I
FSM
TVJ= 45°C, t = 10 ms (50 Hz) 300 A
t = 8.3 ms (60 Hz) 320 A
T
VJ
= 150°C,t = 10 ms (50 Hz) 260 A
t = 8.3 ms (60 Hz) 280 A
P TS= 85°C33W
T
VJ
-40...+150 °C
T
JM
150 °C
T
stg
-40...+150 °C
V
ISOL
50/60 Hz t = 1 min 3000 V~
I
ISOL
£ 1 mA t = 1 s 3600 V~
M
d
Mounting torque (M5) 2-2.5/18-22 Nm/lb.in.
Weight 28 g
Module for Power Factor Correction
MOSFET
Boost DiodeModule Rectifier Diodes
Features
●
Package with DCB ceramic base plate
●
Soldering connections for PCB
mounting
●
Isolation voltage 3600 V~
●
Low R
DS(on)
HDMOSTM process
●
Low package inductance for high
speed switching
●
Ultrafast boost diode
●
Kelvin source for easy drive
Applications
●
Power factor pre-conditioner for
SMPS, UPS, battery chargers and
inverters
●
Boost topology for SMPS including
1~ rectifier bridge
●
Power supply for welding equipment
Advantages
●
3 functions in one package
●
Output power up to 5 kW
●
No external isolation
●
Easy to mount with two screws
●
Suitable for wave soldering
●
High temperature and power cycling
capability
●
Fits easiliy to all available PFC
controller ICs
① Pulse width limited by T
VJ
IXYS reserves the right to change limits, test conditions and dimensions.
VUM 24-05
V
RRM (Diode)
V
DSS
Type
VV
600 500 VUM 24-05N
Power MOSFET Stage
for Boost Converters
5
7
6
8
3
2
4
1
513278 46
Page 2
© 2000 IXYS All rights reserved
2 - 4
Symbol Test Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
V
DSS
VGS = 0 V, ID = 2 mA 500 V
V
GS(th)
VDS= 20 V, ID = 20 mA 2 5 V
I
GSS
VGS= ±20 V, VDS = 0 V ±500 nA
I
DSS
VDS= 500 V, VGS = 0 V 2 mA
R
DS(on)
TVJ= 25°C 0.12 W
R
Gint
TVJ= 25°C1.5W
g
fs
VDS= 15 V, IDS = 12 A 30 S
V
DS
IDS= 24 A, VGS = 0 V 1.5 V
t
d(on)
100 ns
t
d(off)
220 ns
C
iss
8.5 nF
C
oss
0.9 nF
C
rss
0.3 nF
Q
g
VDS= 250 V, ID = 12 A, VGS = 10 V 350 nC
R
thJS
0.38 K/W
V
F
IF= 22 A; TVJ =25°C 1.65 V
TVJ = 150°C1.4V
I
R
VR= 600 V, TVJ =25°C1.5mA
VR= 480 V, TVJ =25°C 0.25 mA
TVJ = 125°C7mA
V
T0
For power-loss calculations only 1.14 V
r
T
TVJ= 125°C10mW
I
RM
IF= 30 A; -diF/dt = 240 A/ms
VR= 350 V, TVJ = 100°C1011A
R
thJS
1.8 K/W
V
F
IF= 20 A, TVJ =25°C1.4V
TVJ = 125°C1.4V
I
R
VR= 800 V TVJ =25°C 0.25 mA
VR= 640 V, TVJ = 125°C2mA
V
T0
For power-loss calculations only 1.05 V
r
T
TVJ= 125°C16mW
R
thJS
2 K/W
VDS = 250 V, IDS = 12 A, VGS = 10 V
Zgen. = 1 W, L-load
V
DS
= 25 V, f = 1 MHz, VGS = 0 V
Rectifier Diodes Boost Diode MOSFET
Fig. 1 Non-repetitive peak surge
current (Rectifier Diodes)
VUM 24-05
Fig. 2 I2t for fusing (Rectifier Diodes)
Dimensions in mm (1 mm = 0.0394")
t
I
2
t
A2s
A
I
FSM
0.001 0.01 0.1 1
0
50
100
150
200
250
300
350
110
0
100
200
300
400
500
s
ms
t
VR= 0.8V
RRM
TVJ= 45°C
TVJ= 125°C
TVJ= 45°C
TVJ= 125°C
Page 3
© 2000 IXYS All rights reserved
3 - 4
VUM 24-05
234567
0
10
20
30
40
50
60
70
80
-50 0 50 100 150
0.0
0.5
1.0
1.5
2.0
2.5
s
g
fs
0 20406080100
0
20
40
60
80
0.51.01.52.02.5
0
20
40
60
80
100
120
10 100 1000
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 5 10 15 20
0.1
1
10
100
0 100 200 300 400
0
2
4
6
8
10
12
-50 0 50 100 150
0.4
0.6
0.8
1.0
1.2
1.4
A/ms
V
DS
V
C
nF
nC
°C
BV
DSS
T
VJ
norm.
°C
V
GS
Q
g
V
norm.
V
GS(th)
T
VJ
R
DS(on)
0246810
0
10
20
30
40
50
60
70
80
I
D
V
DS
V
A
V
GS
I
D
V
A
V
F
A
TVJ = 25°C
T
VJ
= 125°C
-di
F
/dt
V
µC
VGS= 5 V
6 V
10 V
7 V
ID=18A
V
DSS
V
GS(th)
VDS= 250 V
I
D
= 18 A
I
G
= 10 mA
C
iss
C
oss
C
rss
Q
rr
TVJ=150°C
T
VJ
=100°C
T
VJ
= 25°C
IF = 37 A
I
F
= 74 A
I
F
= 37 A
I
F
= 18.5 A
I
F
A
I
D
typ.
max.
TVJ=100°C
V
R
= 350 V
Fig. 3 Typ. output characteristic Fig. 4 Typ. transfer characteristics Fig. 5 Typ. normalized
ID = f (VDS) (MOSFET) ID = f (VGS) (MOSFET) R
DS(on)
= f (TVJ) (MOSFET)
Fig. 6 Typ. normalized BV
DSS
= f (TVJ) Fig. 7 Typ. turn-on gate charge Fig. 8 Typ. capacitances C = f (VDS),
V
GS(th)
= f (TVJ) (MOSFET) characteristics, VGS = f (Qg) (MOSFET) f = 1 MHz (MOSFET)
Fig. 9 Typ. transconductance, Fig. 10 Forward current versus Fig. 11 Recovery charge versus -di
F
/dt
gfs = f (ID) (MOSFET) voltage drop (Boost Diode) (Boost Diode)
Page 4
© 2000 IXYS All rights reserved
4 - 4
VUM 24-05
0 50 100 150 200 250
0
1
2
3
4
5
6
7
0.01 0.1 1 10
0.0
0.5
1.0
1.5
2.0
2.5
0 20406080100120
0
1
2
3
4
5
6
7
8
0 100 200 300 400 500 600
0.0
0.1
0.2
0.3
0.4
0.5
0.6
40 60 80 100 120
0
1
2
3
4
5
6
0 100 200 300 400 500 600
0
10
20
30
40
50
kW
P
out
Z
thJC
K/W
t
-diF/dt
T
S
°C
P
out
kW
0 100 200 300 400 500 600
2
4
6
8
10
12
14
16
18
0.1
0.3
0.5
0.7
0.9
V
FR
µs
-diF/dt
I
RM
A
20 40 60 80 100 120 140 160
0.4
0.6
0.8
1.0
1.2
1.4
T
J
K
t
Vin = 230 V/50 Hz
TS =85°C
Vin = 115 V/60 Hz
P
out
V
in (RMS)
kW
TS =85°C
f
c
= 40 kHz
fc = 80 kHz
V
fc = 80 kHz
Vin = 230 V/50 Hz
Vin = 115 V/60 Hz
°C
A/ms
A/ms
Rectifier Diodes
Boost Diode
MOSFET
IF = 37 A
I
F
= 74 A
I
F
= 37 A
I
F
= 18.5 A
typ.
max.
I
RM
Q
r
IF = 37 A
I
F
= 74 A
I
F
= 37 A
I
F
= 18.5 A
typ.
max.
V
f
c
diF/dt
kHz
A/ms
s
V
FR
t
FR
t
FR
m
s
t
rr
TVJ=100°C
V
R
= 350 V
TVJ=100°C
V
R
= 350 V
VUM 24
Fig. 12 Peak reverse current versus Fig. 13 Dynamic parameters versus Fig. 14 Recovery time versus
-diF/dt (Boost Diode) junction temperature (Boost Diode) -diF/dt (Boost Diode)
Fig. 15 Peak forward voltage versus Fig. 16 Output power versus carrier Fig. 17 Output power versus
-diF/dt (Boost Diode) frequency (Module) mains voltage
Fig. 18 Output power versus Fig. 19 Transient thermal impedance junction to case for all devices
heatsink temperature (Module)
T
VJ
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