Datasheets VRF2933, VRF2933MP Datasheet

VRF2933, VRF2933MP

50 V, 300 W, 150 MHz RF Power MOSFET

Product Overview

The VRF2933(MP) is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial
and military applications requiring high power and gain without compromising reliability, ruggedness, or inter­modulation distortion. Adding MP at the end of part number specifies a matched pair where V
between the two parts.

GS(TH)

is matched

Features

• Improved ruggedness V

• 300 W with 22 dB typical gain at 30 MHz, 50 V

• Excellent stability and low IMD

• Common source configuration

• Available in matched pairs (VRF2933MP)

• 70:1 load VSWR capability at specified operating conditions

• Nitride passivated

• Refractory gold metallization

• High voltage replacement for SD2933

• Thermally enhanced package

• RoHS compliant

(BR)DSS

= 170 V

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Datasheet

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1. Device Specifications

This section shows the specifications of the VRF2933(MP) device.

1.1 Absolute Maximum Ratings

The following table shows the absolute maximum ratings of the VRF2933(MP) device. TC = 25 °C unless otherwise
specified.

Table 1-1. Absolute Maximum Ratings

Symbol Parameter Ratings Unit

VRF2933, VRF2933MP

Device Specifications

V

DSS

I

D

V

GS

P

D

T

STG

T

J

Drain source voltage 170 V

Continuous drain current 42 A

Gate-source voltage ±40 V

Total power dissipation 648 W

Storage temperature range –65 to 150 °C

Operating junction temperature 200

1.2 Electrical Performance

The following table shows the static characteristics of the VRF2933(MP) device. TC = 25 °C unless otherwise
specified.

Table 1-2. Static Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

V

(BR)DSS

V

DS(ON)

I

DSS

I

GSS

g

fs

V

GS(th)

Drain-source breakdown voltage VGS = 0 V, ID = 100 mA 170 180 V

On-state drain voltage I

Zero gate voltage drain current VDS = 100 V, VGS = 0 V 2.0 mA

Gate-source leakage current VDS = ±20 V, VDS = 0 V 2.0 µA

Forward transconductance VDS = 10 V, ID = 20 A 8 mhos

Gate-source threshold voltage VDS = 10 V, ID = 100 mA 2.9 3.6 4.4 V

= 20 A, VGS = 10 V 2.1 2.4

D(ON)

The following table shows the thermal characteristics of the VRF2933(MP) device.

Table 1-3. Thermal Characteristics

Symbol Characteristic Min Typ Max Unit

R

θJC

Junction-to-case thermal resistance 0.27 °C/W

Note:  These devices are sensitive to electrostatic discharge. Proper handling procedures should be followed.
The following table shows the dynamic characteristics of the VRF2933(MP) device. TC = 25 °C unless otherwise

specified.

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Datasheet

DS00004434A-page 2

VRF2933, VRF2933MP

Device Specifications

Table 1-4. Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

C

iss

C

oss

C

rss

Input capacitance VGS = 0 V, VDS = 50 V, f = 1 MHz 740 pF

Output capacitance 400

Reverse transfer
capacitance

The following table shows the functional characteristics of the VRF2933(MP) device. TC = 25 °C unless otherwise
specified.

Table 1-5. Functional Characteristics

Parameter Characteristics Test Conditions Min Typ Max Unit

G

PS

Common source amplifier
power gain

η Drain efficiency f1 = 30 MHz, VDD = 50 V, IDQ = 250

Ψ Electrical ruggedness

VSWR 5:1

1.3 Typical Performance Curves

This section shows the typical performance curves of the VRF2933(MP) device.

f1 = 30 MHz, VDD = 50 V, IDQ = 250
mA, P

mA, P

= 300 W

out

= 300 W CW

out

f1 = 30 MHz, VDD = 50 V, IDQ = 250
mA, P

= 300 W CW

out

70:1 VSWR — all phase angles,

0.2 ms × 20% duty factor

32

20 25 dB

50 %

No degradation in output power

Figure 1-1. Output Characteristics Figure 1-2. Transfer Characteristics

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Datasheet

DS00004434A-page 3

VRF2933, VRF2933MP

Device Specifications

Figure 1-3. Capacitance vs. Drain-to-Source Voltage Figure 1-4. Forward Safe Operating Area

Figure 1-5. Maximum Effective Transient Thermal Impedance Junction-to-Case vs. Pulse Duration

Figure 1-6. Transient Thermal Impedance Model

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Datasheet

DS00004434A-page 4

VRF2933, VRF2933MP

Device Specifications

Figure 1-7. PIN vs. P

OUT

Figure 1-8. PIN vs. P

OUT

The following table shows the typical Class AB large signal input-output impedance for the VRF2933(MP) device.

Table 1-6. Typical Class AB Large Signal Input–Output Impedance

Frequency (MHz) Z

in

Z

out

2 23.6 - j 5.5 4.0 - j 0.1

13.5 7.6 - j 10.1 3.9 - j 0.6

27.1 3.5 - j 6.0 3.7 - j 1.1

40.7 2.5 - j 4.0 3.3 - j 1.5

65 1.95 - j 2.07 2.6 - j 1.9

100 1.8 - j 0.66 1.76 - j 0.2

150 1.78 + j 0.5 1.03 + j 1.7

Notes: 

• Zin — Gate shunted with 25 Ω

• Idq = 250 mA

• ZOL — Conjugate of optimum load for 300 W output at Vdd = 50 V

• j = √ – 1

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Datasheet

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2. Test Circuits

The following figure shows the test circuit of the VRF2933 device.

Figure 2-1. 30 MHz Test Circuit

VRF2933, VRF2933MP

Test Circuits

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Datasheet

DS00004434A-page 6

3. Package Specification

This section shows the package specification of the VRF2933(MP) device.

3.1 Package Outline Drawing

The following figure illustrates the package outline of the VRF2933(MP) device.

Figure 3-1. M177 Package Outline

VRF2933, VRF2933MP

Package Specification

Note:  Hazardous Material Warning!

The ceramic portion of the device between leads and mounting flange is beryllium oxide. Beryllium oxide dust is
highly toxic when inhaled. Care must be take during handling and mounting to avoid damage to this area. These
devices must never be thrown away with general industrial or domestic waste.

The following table shows the package dimensions for the VRF2933(MP) device.

Table 3-1. Package Dimensions

Dimension Min. Typ. Max.

A 0.225 0.230 0.235

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Datasheet

DS00004434A-page 7

VRF2933, VRF2933MP

Package Specification

...........continued

Dimension Min. Typ. Max.

B 0.265 0.270 0.275

C 0.860 0.865 0.870

D 1.130 1.135 1.140

E 0.545 0.550 0.555

F 0.003 0.005 0.007

G 0.098 0.103 0.108

H 0.150 0.160 0.170

I 0.280

J 1.080 1.100 1.120

K 0.625 0.630 0.635

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Datasheet

DS00004434A-page 8

4. Matched Pair Part Marking

Adding MP at the end of part number specifies a matched pair where V
range codes are marked on the devices per the following table.

Table 4-1. VTH Range Codes

Code VTH Range Code VTH Range

A 2.900–2.975 M 3.650–3.725

B 2.975–3.050 N 3.725–3.800

C 3.050–3.125 P 3.800–3.875

D 3.125–3.200 R 3.875–3.950

E 3.200–3.275 S 3.950–4.025

F 3.275–3.350 T 4.025–4.100

G 3.350–3.425 W 4.100–4.175

H 3.425–3.500 X 4.175–4.250

J 3.500–3.575 Y 4.250–4.325

VRF2933, VRF2933MP

Matched Pair Part Marking

is matched between the two parts. V

GS(TH)

TH

K 3.575–3.650 Z 4.325–4.400

Note:  VTH values are based on Microchip measurements at datasheet conditions with an accuracy of 1.0%.

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Datasheet

DS00004434A-page 9

5. Revision History

Table 5-1. Revision History

Revision Date Description

A 02/2022 • Document migrated from

VRF2933, VRF2933MP

Revision History

Microsemi template to
Microchip template; Assigned
Microchip literature number
DS-00004434A,which replaces
the previous Microsemi
literature number 050-4941.

• Reduced V
max. to 2.4 V max.

limit from 2.7 V

DS(on)

Initial releases (Microsemi Revisions
A through K)

12/2006 – 10/2020 Previous releases.

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VRF2933, VRF2933MP

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VRF2933, VRF2933MP

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VRF2933, VRF2933MP

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