Datasheet VNQ660SP Datasheet (ST)

Features

Typ e R

VNQ660SP 50mΩ

DS(on)

(1)

I

OUT

6A 36V

V

VNQ660SP

Quad channel high side solid state relay

CC

10

1. Per each channel.

■ CMOS compatible inputs

■ Off state open load detection

■ Undervoltage and overvoltage shutdown

■ Overvoltage clamp

■ Thermal shutdown

■ Current limitation

■ Very low standby power dissipation

■ Protection against loss of ground and loss of

V

CC

■

Reverse battery protection

a. See Application schematic on page 16

(a)

1

PowerSO-10

Description

The VNQ660SP is a monolithic device made by
using| STMicroelectronics VIPower M0-3
Technology, intended for driving resistive or
inductive loads with one side connected to
ground.

This device has four independent channels. Built­in thermal shutdown and output current limitation
protect the chip from over temperature and short
circuit.

Table 1. Device summary

Order codes

Package

Tube Tape and reel

PowerSO-10 VNQ660SP VNQ660SP13TR

December 2008 Rev 5 1/26

www.st.com

26

Contents VNQ660SP

Contents

1 Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

2.3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

2.4 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

3 Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

3.1 GND protection network against reverse battery . . . . . . . . . . . . . . . . . . . 16

3.1.1 Solution 1: a resistor in the ground line (RGND only) . . . . . . . . . . . . . . 16

3.1.2 Solution 2: a diode (D

) in the ground line . . . . . . . . . . . . . . . . . . . . 17

GND

3.2 Load dump protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

3.3 MCU I/O protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

3.4 Maximum demagnetization energy (V

= 13.5V) . . . . . . . . . . . . . . . . . . 18

CC

4 Package and PCB thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

4.1 PowerSO-10 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

5 Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

5.1 ECOPACK® packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

5.2 PowerSO-10 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

5.3 PowerSO-10 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

2/26

VNQ660SP List of tables

List of tables

Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table 2. Suggested connections for unused and not connected pins . . . . . . . . . . . . . . . . . . . . . . . . 5

Table 3. Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Table 4. Thermal data (per island) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Table 5. Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Table 6. Protections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Table 7. V
Table 8. Switching (V

Table 9. Logic inputs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Table 10. Openload detection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Table 11. Truth table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Table 12. Electrical transient requirements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Table 13. Thermal parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Table 14. PowerSO-10 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

Table 15. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

- output diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

CC

= 13V; Tj = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

CC

3/26

List of figures VNQ660SP

List of figures

Figure 1. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Figure 2. Configuration diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Figure 3. Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Figure 4. Status timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Figure 5. Switching characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Figure 6. Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Figure 7. Off state output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Figure 8. High level input current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Figure 9. Input clamp voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Figure 10. Turn-on voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Figure 11. Overvoltage shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Figure 12. Turn-off voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Figure 13. ILIM vs Tcase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Figure 14. On state resistance vs V

Figure 15. Input high level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Figure 16. Input hysteresis voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Figure 17. On state resistance vs Tcase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Figure 18. Input low level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Figure 19. Status leakage current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Figure 20. Status low output voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Figure 21. Status clamp voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Figure 22. Openload Off state detection threshold . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Figure 23. Application schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Figure 24. Maximum turn-off current versus load inductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Figure 25. PowerSO-10 PC board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Figure 26. Rthj-amb Vs PCB copper area in open box free air condition . . . . . . . . . . . . . . . . . . . . . . 19

Figure 27. Thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Figure 28. Thermal fitting model of a quad channel HSD in PowerSO-10. . . . . . . . . . . . . . . . . . . . . . 20

Figure 29. PowerSO-10 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Figure 30. PowerSO-10 suggested pad layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

Figure 31. PowerSO-10 tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

Figure 32. SO-28 tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

CC

4/26

VNQ660SP Block diagram and pin description

1 Block diagram and pin description

Figure 1. Block diagram

V

CC

OVERVOLTAGE

UNDERVOLTAGE

INPUT 1

INPUT 2

INPUT 3

INPUT 4

STATUS

STATUS

OVERTEMP. 1

OVERTE MP. 2

OVERTEMP. 3

OVERTE MP. 4

LOGIC

Figure 2. Configuration diagram (top view)

DRIVER 1

DRIVER 2

DRIVER 3

DRIVER 4

OPEN LOAD
OFF-STATE

GND

DEMAG 1

I

LIM1

DEMAG 2

I

LIM2

DEMAG 3

I

LIM3

DEMAG 4

I

LIM4

OUTPUT 1

OUTPUT 2

OUTPUT 3

OUTPUT 4

STATUS
INPUT 4
INPUT 3
INPUT 2
INPUT 1

10

6
7

8
9

5
4
3

2

1

GND
OUTPUT 4
OUTPUT 3
OUTPUT 2
OUTPUT 1

11

V

CC

Table 2. Suggested connections for unused and not connected pins

Connection / pin Status N.C. Output Input

Floating X X X X

To ground X

Through 10KΩ

5/26

resistor

Electrical specifications VNQ660SP

2 Electrical specifications

2.1 Absolute maximum ratings

Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality document.

Table 3. Absolute maximum ratings

Symbol Parameter Value Unit

V

- V

I

OUT

I

STAT

I

GND

V

E

P

T

CC

CC

I

R

I

IN

ESD

MAX

tot

T

stg

E

C

Supply voltage 41 V

Reverse DC supply voltage - 0.3 V

DC output current, per each channel Internally limited A

Reverse DC output current, per each channel - 15 A

Input current +/- 10 mA

Status current +/- 10 mA

DC ground current at TC < 25°C -200 mA

Electrostatic discharge (human body model: R=1.5KΩ;
C = 100pF)

- INPUT

- STATUS

- OUTPUT

- V

CC

Maximum switching energy
(L = 0.38mH; R

= 0Ω; V

L

bat

= 13.5V; T

= 150ºC; IL = 14A)

jstart

4000
4000
5000
5000

101 mJ

Power dissipation at TC = 25°C 114 W

Junction operating temperature - 40 to 150 °C

j

Storage temperature - 65 to 150 °C

Non repetitive clamping energy at TC = 25°C 150 mJ

V
V
V
V

2.2 Thermal data

Table 4. Thermal data (per island)

Symbol Parameter Value Unit

R

thj-case

R

thj-amb

1. When mounted on a standard single-sided FR-4 board with 1cm2 of Cu (at least 35 µm thick).

2. When mounted on a standard single-sided FR-4 board with 6cm2 of Cu (at least 35 µm thick).

6/26

Thermal resistance junction-case 1.1

Thermal resistance junction-ambient (one chip ON) 51.1

(1)

(1)

52

33

(2)

(2)

°C/W

°C/W

VNQ660SP Electrical specifications

2.3 Electrical characteristics

Note: V

Values specified in this section are for 6V < V

CC

otherwise stated.

Figure 3. Current and voltage conventions

I

V

IN1

V

IN2

= V

Fn

Table 5. Power

CCn

- V

OUTn

IN1

V

STAT

INPUT 1

INPUT 2

INPUT 3

INPUT 4

STATUS

I

IN2

I

IN3

I

V

IN4

IN3

V

IN4

during reverse battery condition.

V

I

STAT

CC

OUTPUT 1

OUTPUT 2

OUTPUT 3

OUTPUT 4

GND

< 24V; -40°C < Tj < 150°C, unless

I

S

V

(*)

I

GND

I

OUT1

I

OUT2

I

OUT3

I

OUT4

V

OUT4

V

F1

OUT3

V

OUT2

V

OUT1

V

CC

Symbol Parameter Test conditions Min. Typ. Max. Unit

Operating supply

(1)

V

V

V

UVhyst

V

V

OVhyst

CC

USD

OV

R

I

S

voltage

(1)

Undervoltage shutdown 3.5 4.6 6 V

Undervoltage

(1)

hysteresis

(1)

Overvoltage shutdown 36 V

(1)

Overvoltage hysteresis 0.25 V

I

= 1A; Tj = 25°C

OUT

< 18V

CC

= 1A;Tj = 150°C

< 18V

CC

= 1A; VCC = 6V

= 13.5V;

CC

= V

= V

OUT

OUT

= 0V

= 13.5V;

CC

= 0V;

On state resistance

ON

(1)

Supply current

9V < V
I

OUT

9V < V
I

OUT

Off State; V
V

IN

Off State; V
V

IN

Tj = 25°C

On State; V

CC

= 13V; V

= 3.25V;

IN

9V < VCC < 18V

61336V

0.2 1 V

408550

12

12

6

100

130

40

25

12

mΩ

mΩ

mΩ

µA

µA

mA

7/26

Electrical specifications VNQ660SP

Table 5. Power (continued)

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

L(off1)

I

L(off2)

I

L(off3)

I

L(off4)

1. Per device.

Table 6. Protections

Off state output current V

Off state output current V

Off state output current

Off state output current

= V

IN

= 0V; V

IN

V

= V

IN

= 125°C

T

j

V

= V

IN

=25°C

T

j

= 0V 0 50 µA

OUT

= 3.5V -75 0 µA

OUT

OUT

OUT

= 0V; V

= 0V; V

CC

CC

= 13V;

= 13V;

5µA

3µA

Symbol Parameter Test conditions Min. Typ. Max. Unit

T

T

I

V

demag

V

I

LSTAT

C

V

Shutdown temperature 150 170 200 °C

TSD

Reset temperature 135 °C

T

R

Thermal hysteresis 7 15 25 °C

hyst

DC short circuit current

lim

Turn-off output clamp
voltage

Status low output voltage I

STAT

Status leakage current

Status pin input capacitance

STAT

Status clamp voltage

SCL

9V < V
6V < V

I

OUT

V

CC

CC

= 0V;

IN

< 36V
< 36V

= 2A;

L = 6mH

=1.6mA 0.5 V

STAT

Normal operation;

=5V

V

STAT

Normal operation;

V

=5V

STAT

I

=1mA

STAT

=-1mA

I

STAT

6101818A

-41V

V

CC

66.8

- 0.7

CC

-48V

-

CC

55

10 µA

25 pF

8V

A

V

V

Note: To ensure long term reliability under heavy overload or short circuit conditions, protection

and related diagnostic signals must be used together with a proper software strategy. If the
device is subjected to abnormal conditions, this software must limit the duration and number
of activation cycles.

Table 7. VCC - output diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

F

Forward on voltage - I

8/26

= 1.6A; Tj = 150°C 0.6 V

OUT

VNQ660SP Electrical specifications

Table 8. Switching (V

Symbol Parameter Test conditions Min. Typ. Max. Unit

t

d(on)

t

d(off)

/dt

dV

OUT

dV

/dt

OUT

Table 9. Logic inputs

Symbol Parameter Test conditions Min. Typ. Max. Unit

Turn-on delay time

Turn-off delay time

Turn-on voltage slope

(on)

Turn-off voltage slope

(off)

= 13V; Tj = 25°C)

CC

R

= 13Ω channels 1,2,3,4

L

(see Figure 5)

= 13Ω channels 1,2,3,4

R

L

(see Figure 5)

= 13Ω channels 1,2,3,4

R

L

(see Figure 5)

R

= 13Ω channels 1,2,3,4

L

(see Figure 5)

40 70 µs

40 140 µs

See

Figure 10

See

Figure 12

V/µs

V/µs

V

I

V

I

V

I(hyst)

C

V

Table 10. Openload detection

Input low level voltage 1.25 V

IL

Input low level current V

IL

Input high level voltage 3.25 V

IH

Input high level current V

IH

= 1.25V 1 µA

IN

= 3.25V 10 µA

IN

Input hysteresis voltage 0.5 V

Input capacitance 40 pF

IN

Input clamp voltage

ICL

I

IN

I

IN

= 1mA

= -1mA

66.8

- 0.7

8V

Symbol Parameter Test conditions Min. Typ. Max. Unit

t

SDL

V

t

DOL

Status delay See Figure 4 20 µs

Openload voltage detection threshold V

OL

Openload detection delay at turn-off

= 0V 1.5 2.5 3.5 V

IN

= 18V

V

CC

(see Figure 4)

300 µs

Figure 4. Status timings

V

V

V

IN

STAT

OPENLOAD STATUS TIMING

t

DOL

OVERTEMP STATUS TIMING

VIN

V

t

SDL

STAT

t

SDL

t

SDL

9/26

Electrical specifications VNQ660SP

Figure 5. Switching characteristics

V

OUT

dV

/dt

OUT

(on)

I

SENSE

INPUT

Table 11. Truth table

t

d(on)

80%

90%

t

DSENSE

90%

dV

/dt

OUT

(off)

t

r

10%

t

d(off)

t

f

t

t

t

Conditions Input Output Status

Normal operation

Current limitation

Overtemperature

Undervoltage

Overvoltage

Output voltage > V

Output current < I

OL

OL

L

H

L
H
H

L
H

L
H

L
H

L
H

L
H

L

H

L
X
X

L

L

L

L

L

L

H
H

L
H

(T
(T

J

J

< T

> T

H
H

H

H

L

X
X

H
H

L

H

H

L

TSD

TSD

) H

) L

10/26

VNQ660SP Electrical specifications

Table 12. Electrical transient requirements

ISO T/R

7637/1

Tes t puls e

I II III IV Delays and impedance

1 - 25V - 50V - 75V - 100V 2ms, 10Ω

2 + 25V + 50V + 75V + 100V 0.2ms, 10Ω

3a - 25V - 50V - 100V - 150V 0.1µs, 50Ω

3b + 25V + 50V + 75V + 100V 0.1µs, 50Ω

4 - 4V - 5V - 6V - 7V 100ms, 0.01Ω

5 + 26.5V + 46.5V + 66.5V + 86.5V 400ms, 2Ω

ISO T/R

7637/1

Tes t puls e

IIIIIIIV

1C C C C

2C C C C

3a C C C C

3b C C C C

4C C C C

5C E E E

Class Contents

C

E

All functions of the device are performed as designed after exposure to
disturbance.
One or more functions of the device is not performed as designed after exposure
and cannot be returned to proper operation without replacing the device.

Test level

Test level

11/26

Electrical specifications VNQ660SP

Figure 6. Waveforms

NORMAL OPERATION

INPUT

n

LOAD VOLTAGE

STATUS

V

CC

INPUT

n

LOAD VOLTAGE

STATUS

V

INPUT

n

CC

n

LOAD VOLTAGE
STATUS

n

n

UNDERVOLTAGE

V

USDhyst

V

USD

n

undefined

OVERVOLTAGE

VCC<V

OV

n

VCC>V

OV

INPUT

n

LOAD VOLTAGE

STATUS

T

INPUT

n

j

n

LOAD CURRENT

STATUS

n

OPENLOAD with external pull-up

n

t

t

DOL

T

TSD

T

R

n

OVERTEMPERATURE

DOL

V

OL

12/26

VNQ660SP Electrical specifications

2.4 Electrical characteristics curves

Figure 7. Off state output current Figure 8. High level input current

IL(off1 ) (µA)

10

9

Off state

8

Vcc=24V

Vout=0V

7

6

5

4

3

2

1

0

-50 -25 0 25 50 75 100 125 150 175

Tc ( ºC )

Iih (µA )

7

6

Vin=3.25V

5

4

3

2

1

0

-50 -25 0 25 50 75 100 125 150 175

Tc ( ºC )

Figure 9. Input clamp voltage Figure 10. Turn-on voltage slope

Vicl (V)

8

7.75

7.5

7.25

6.75

6.5

6.25

Ii n =1 m A

7

6

-50 -25 0 25 50 75 100 125 150 175

Tc ( ºC )

dV out/dt(on) (V/ms )

500

450

400

350

300

250

200

150

100

Vcc=13V

Rl =13Oh m

50

0

-50 -25 0 25 50 75 100 125 150 175

Tc ( ºC )

Figure 11. Overvoltage shutdown Figure 12. Turn-off voltage slope

Vov (V)

54

52

50

48

46

44

42

40

38

36

34

-50 -25 0 25 50 75 100 125 150 175

Tc ( ºC )

13/26

dV out/dt(off) (V/ms)

700

600

500

400

300

200

100

Vcc=13V

Rl =13Oh m

0

-50 -25 0 25 50 75 100 125 150 175

Tc ( ºC )

Electrical specifications VNQ660SP

Figure 13. I

vs T

LIM

case

Vih (V)

4

3.75

3.5

3.25

3

2.75

2.5

2.25

2

-50 -25 0 25 50 75 100 125 150 175

Tc ( ºC )

Figure 14. On state resistance vs V

RDS(on) (mOhm)

100

90

Io u t=1 A Tc=150ºC

80

70

60

50

40

30

20

10

0

8 9 10 11 12 13 14 15 16 17 18 19 20

Vcc (V)

Tc=25ºC

Tc= - 40ºC

Figure 15. Input high level Figure 16. Input hysteresis voltage

Vih (V)

4

3.75

3.5

3.25

3

2.75

2.5

2.25

2

-50 -25 0 25 50 75 100 125 150 175

Tc ( ºC )

Vihyst (V)

1.4

1.3

1.2

1.1

1

0.9

0.8

0.7

0.6

0.5

-50 -25 0 25 50 75 100 125 150 175

Tc ( ºC )

CC

Figure 17. On state resistance vs Tcase Figure 18. Input low level

R DS (on ) (mO hm)

100

90

80

70

60

50

40

30

20

10

0

-50 -25 0 25 50 75 100 125 150 175

Io u t =1 A

Vc c=9V; 13V ; 18V

Tc ( ºC )

14/26

Vil (V)

2.6

2.4

2.2

2

1.8

1.6

1.4

1.2

1

-50 -25 0 25 50 75 100 125 150 175

Tc ( ºC )

VNQ660SP Electrical specifications

Figure 19. Status leakage current Figure 20. Status low output voltage

Ils tat (µ A)

0.05

0.045

0.04

0.035

0.03

0.025

0.02

0.015

0.01

0.005

Vstat=5V

0

-50 -25 0 25 50 75 100 125 150 175

Tc ( ºC )

Vstat (V)

0.6

0.525

0.45

0.375

0.3

0.225

0.15

0.075

Istat=1.6mA

0

-50 -25 0 25 50 75 100 125 150 175

Tc ( ºC )

Figure 21. Status clamp voltage Figure 22. Openload Off state detection

threshold

Vscl (V)

7.4

7.3

Is t a t =1 m A

7.2

7.1

7

6.9

6.8

6.7

6.6

-50 -25 0 25 50 75 100 125 150 175

Tc ( ºC )

Vol (V)

5

4.5

3.5

2.5

1.5

0.5

Vin=0V

4

3

2

1

0

-50 -25 0 25 50 75 100 125 150 175

Tc ( ºC )

15/26

Application information VNQ660SP

3 Application information

Figure 23. Application schematic

+5V

µ

C

.

+5V

V

GND

R

GND

CC

D

GND

R

prot

R

prot

R

prot

R

prot

R

prot

STATUS

INPUT1

INPUT2

INPUT3

INPUT4

V

GND

Note: Channels 3 & 4 have the same internal circuit as channel 1 & 2.

OUTPUT1

OUTPUT2

OUTPUT3

OUTPUT4

D

ld

3.1 GND protection network against reverse battery

This section provides two solutions for implementing a ground protection network against
reverse battery.

3.1.1 Solution 1: a resistor in the ground line (R

This can be used with any type of load.

The following show how to dimension the R

1. R

2. R

where - I

≤ 600mV / 2 (I

GND

≥ ( - VCC) / ( - I

GND

is the DC reverse ground pin current and can be found in the absolute

GND

S(on)max

GND

)

)

maximum rating section of the device datasheet.

Power dissipation in R

P

= ( - VCC)2/ R

D

16/26

GND

GND

(when V

< 0 during reverse battery situations) is:

CC

GND

resistor:

GND

only)

VNQ660SP Application information

This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I

S(on)max

becomes the sum of the

maximum on-state currents of the different devices.

Please note that, if the microprocessor ground is not shared by the device ground, then the
R

will produce a shift (I

GND

S(on)max

* R

) in the input thresholds and the status output

GND

values. This shift will vary depending on how many devices are ON in the case of several
high side drivers sharing the same R

GND

.

If the calculated power dissipation requires the use of a large resistor, or several devices
have to share the same resistor, then ST suggests using solution 2 below.

3.1.2 Solution 2: a diode (D

A resistor (R

= 1kΩ) should be inserted in parallel to D

GND

) in the ground line

GND

an inductive load. This small signal diode can be safely shared amongst several different
HSD. Also in this case, the presence of the ground network will produce a shift (j600mV) in
the input threshold and the status output values if the microprocessor ground is not common
with the device ground. This shift will not vary if more than one HSD shares the same
diode/resistor network. Series resistor in INPUT and STATUS lines are also required to
prevent that, during battery voltage transient, the current exceeds the Absolute Maximum
Rating. Safest configuration for unused INPUT and STATUS pin is to leave them
unconnected.

3.2 Load dump protection

Dld is necessary (voltage transient suppressor) if the load dump peak voltage exceeds the
V

maximum DC rating. The same applies if the device is subject to transients on the VCC

CC

line that are greater than those shown in the ISO T/R 7637/1 table.

3.3 MCU I/O protection

If a ground protection network is used and negative transients are present on the VCC line,
the control pins will be pulled negative. ST suggests to insert a resistor (R
prevent the µC I/O pins from latching up.

if the device will be driving

GND

) in line to

prot

The value of these resistors is a compromise between the leakage current of µC and the
current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of µC
I/Os:

- V

CCpeak

/ I

latchup

≤ R

prot

≤ (V

OHµC

- V

IH

- V

GND

) / I

IHmax

Example

For the following conditions:

V

I

latchup

V

OHµC

5kΩ ≤ R

Recommended values are:

R

CCpeak

≥ 20mA

≥ 4.5V

= 10kΩ

prot

= - 100V

≤ 65kΩ.

prot

17/26

Application information VNQ660SP

3.4 Maximum demagnetization energy (V

Figure 24. Maximum turn-off current versus load inductance

LMAX (A)

I

100

10

1

0.01 0.1 1 10 100
L(mH)

= 13.5V)

CC

A

B

C

A = single pulse at T

Jstart

B= repetitive pulse at T

C= repetitive pulse at T

VIN, I

L

Demagnetization

Note: Values are generated with R

In case of repetitive pulses, T
must not exceed the temperature specified above for curves B and C.

= 150ºC

= 100ºC

Jstart

= 125ºC

Jstart

Demagnetization

= 0Ω.

L

(at beginning of each demagnetization) of every pulse

jstart

Demagnetization

t

18/26

VNQ660SP Package and PCB thermal data

4 Package and PCB thermal data

4.1 PowerSO-10 thermal data

Figure 25. PowerSO-10 PC board

Note: Layout condition of R

thickness = 2mm, Cu thickness = 35µm, Copper areas: from minimum pad lay-out to 8 cm

Figure 26. R

thj-amb

RTHjamb (ºC/W)

55

50

45

40

35

30

25

20

0246810

and Zth measurements (PCB FR4 area = 58mm x 58mm, PCB

th

Vs PCB copper area in open box free air condition

2

).

PC B C u heatsink area (cm^2)

19/26

Package and PCB thermal data VNQ660SP

Figure 27. Thermal impedance junction ambient single pulse

ZT H (°C /W)

1000

2

100

10

0.5 cm

2 cm

4 cm

8 cm

2

2

2

1

0.1

0.0001 0.001 0.01 0.1 1 10 100 1000
Time (s)

Equation 1

Z

THδ

where

: pulse calculation formula

R

TH

δ Z

THtp

1 δ–()+⋅=

δ tpT⁄=

Figure 28. Thermal fitting model of a quad channel HSD in PowerSO-10

20/26

VNQ660SP Package and PCB thermal data

Table 13. Thermal parameters

Area / island (cm2)0.5248

R1 = R7 = R9 = R11 (°C/W) 0.15

R2 = R8 = R10 = R12 (°C/W) 0.5

R3 (°C/W) 0.4

R4 (°C/W) 10

R5 (°C/W) 15

R6 (°C/W) 26 14.5 10 6

C1 = C7 = C9 = C11 (W.s/°C) 0.0006

C2 = C8 = C10 = C12 (W.s/°C) 0.0021

C3 (W.s/°C) 0.02

C4 (W.s/°C) 0.5

C5 (W.s/°C) 1.5

C6 (W.s/°C) 5 10 14 18

21/26

Package and packing information VNQ660SP

5 Package and packing information

5.1 ECOPACK® packages

In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. ECOPACK® packages are lead-free. The category of Second Level Interconnect
is marked on the package and on the inner box label, in compliance with JEDEC Standard
JESD97. The maximum ratings related to soldering conditions are also marked on the inner
box label.

ECOPACK is an ST trademark. ECOPACK specifications are available at www.st.com.

5.2 PowerSO-10 mechanical data

Figure 29. PowerSO-10 package dimensions

B

0.10 A

10

B

HE

h

A

F

A1

1

eB

0.25

D

= =

D1

= =

E2

DETAIL "A"

DETAIL "A"

E

SEATING

PLANE

A

C

α

E4

SEATING
PLANE

A1

L

22/26

VNQ660SP Package and packing information

Table 14. PowerSO-10 mechanical data

mm

Dim.

Min. Typ. Max.

A 3.35 3.65

(1)

A

A1 0 0.10

B 0.40 0.60

(1)

B

C 0.35 0.55

(1)

C

D 9.40 9.60

D1 7.40 7.60

E 9.30 9.50

3.4 3.6

0.37 0.53

0.23 0.32

E2 7.20 7.60

(1)

E2

E4 5.90 6.10

(1)

E4

e1.27

F 1.25 1.35

(1)

F

H 13.80 14.40

(1)

H

h0.50

L 1.20 1.80

(1)

L

α 0° 8°

(1)

α

1. Muar only POA P013P.

7.30 7.50

5.90 6.30

1.20 1.40

13.85 14.35

0.80 1.10

2° 8°

23/26

Package and packing information VNQ660SP

5.3 PowerSO-10 packing information

Figure 30. PowerSO-10 suggested

pad layout

Figure 31. PowerSO-10 tube shipment

(no suffix)

14.6 - 14.9

10.8 - 11

6.30

1

2
3

9.5
4

5

0.67 - 0.73

10

0.54 - 0.6

9
8

7

1.27

6

C

A

All dimensions are in mm.

Casablanca 50 1000 532 10.4 16.4 0.8

B

Base Q.ty Bulk Q.ty

Muar 50 1000 532 4.9 17.2 0.8

Figure 32. SO-28 tape and reel shipment (suffix “TR”)

A

Tube length (±

0.5)

Reel dimensions

Base Q.ty 600
Bulk Q.ty 600
A (max) 330
B (min) 1.5
C (± 0.2) 13
F 20.2
G (+ 2 / -0) 24.4
N (min) 60
T (max) 30.4

B

AB

MUARCASABLANCA

C

C (±

0.1)

Tape dimensions

According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986

Tape width W 24
Tape Hole Spacing P0 (± 0.1) 4
Component Spacing P 24
Hole Diameter D (± 0.1/-0) 1.5
Hole Diameter D1 (min) 1.5
Hole Position F (± 0.05) 11.5
Compartment Depth K (max) 6.5
Hole Spacing P1 (± 0.1) 2

All dimensions are in mm.

24/26

Top

cover

tape

End

500mm min

Empty components pockets
saled with cover tape.

User direction of feed

Start

No componentsNo components Components

500mm min

VNQ660SP Revision history

6 Revision history

Table 15. Document revision history

Date Revision Changes

22-Jun-2004 1 Initial release.

14-Jul-2004 2 New revision.

Minor changes.
Current and voltage convention update (page 2).
Configuration diagram (top view) & suggested connections for unused

24-Jul-2004 3

28-Jul-2004 4 Disclaimers Update (page 19).

03-Dec-2008 5

and not connected pins insertion (page 3).
6 cm2 Cu condition insertion in thermal data table (page 3).

- output diode section update (page 3).

V

CC

Protections note insertion (page 4)
Revision history table insertion (page 18).

Document reformatted and restructured.
Added contents, list of tables and figures.
Added ECOPACK® packages information.

25/26

VNQ660SP

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26/26