Datasheet VNQ600 Datasheet (ST)

Page 1
Features
Max supply voltage V
Max On-state resistance R
Current limitation (typ.) I
1. Per each channel.
CC
ON
LIM
VNQ600
Quad channel high side solid state relay
36V
(1)
35mΩ
25A
■ DC short circuit current: 25A
■ CMOS compatible inputs
■ Undervoltage & overvoltage shutdown
■ Overvoltage clamp
■ Thermal shutdown
■ Current limitation
■ Very low standby power dissipation
■ Protection against:
– Loss of ground & loss of V
■ Reverse battery protection
(a)
CC
SO-28 (double island)
Description
The VNQ600 is a quad HSD formed by assembling two VND600 chips in the same SO-28 package. The VNQ600 is a monolithic device designed in| STMicroelectronics VIPower M0-3 Technology. The VNQ600 is intended for driving any type of multiple loads with one side connected to ground.
This device has four independent channels and four analog sense outputs which deliver currents proportional to the outputs currents.
Active current limitation combined with thermal shutdown and automatic restart protect the device against overload. Device automatically turns off in case of ground pin disconnection.
a. See Application schematic on page 17

Table 1. Device summary

Order codes
Package
Tube Tape and reel
SO-28 (double island) VNQ600 VNQ60013TR
November 2008 Rev 10 1/26
www.st.com
26
Page 2
Contents VNQ600

Contents

1 Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.4 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3 Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.1 GND protection network against reverse battery . . . . . . . . . . . . . . . . . . . 17
3.1.1 Solution 1: a resistor in the ground line (RGND only) . . . . . . . . . . . . . . 17
3.1.2 Solution 2: a diode (D
3.2 Load dump protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.3 MCU I/O protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.4 Maximum demagnetization energy (VCC = 13.5V) . . . . . . . . . . . . . . . . . 19
) in the ground line . . . . . . . . . . . . . . . . . . . . 18
GND
4 Package and PCB thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4.1 SO-28 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
5 Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
5.1 ECOPACK® packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
5.2 SO-28 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
2/26
Page 3
VNQ600 List of tables

List of tables

Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table 2. Suggested connections for unused and not connected pins . . . . . . . . . . . . . . . . . . . . . . . . 6
Table 3. Absolute maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 4. Thermal data (per island) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Table 5. Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Table 6. Protections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Table 7. Switching (V Table 8. Current sense (9V< V
Table 9. Logic inputs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Table 10. V
- output diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
CC
Table 11. Truth table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Table 12. Electrical transient requirements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 13. Thermal calculation according to the PCB heatsink area . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Table 14. Thermal parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Table 15. SO-28 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Table 16. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
=13V; Tj = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
CC
< 16V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
CC
3/26
Page 4
List of figures VNQ600

List of figures

Figure 1. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 2. Configuration diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Figure 3. Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Figure 4. I
OUT/ISENSE
Figure 5. Switching characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 6. Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 7. Off state output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 8. High level input current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 9. Input clamp voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 10. Turn-on voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 11. Overvoltage shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 12. Turn-off voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 13. I
vs Tcase. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
LIM
Figure 14. On state resistance vs V
Figure 15. Input high level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 16. Input hysteresis voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 17. On state resistance vs Tcase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 18. Input low level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 19. Application schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Figure 20. Maximum turn-off current versus load inductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 21. SO-28 PC board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 22. Rthj-amb Vs PCB copper area in open box free air condition . . . . . . . . . . . . . . . . . . . . . . 21
Figure 23. Thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 24. Thermal fitting model of a quad channel HSD in SO-28 . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 25. SO-28 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 26. SO-28 tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 27. SO-28 tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
versus I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
OUT
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
CC
4/26
Page 5
VNQ600 Block diagram and pin description

1 Block diagram and pin description

Figure 1. Block diagram

1,2
V
CC
OVERVOLTAGE
UNDERVOLTAGE
INPUT 1
INPUT 2
GND 1,2
INPUT 3
INPUT 4
GND 3,4
OVERTEMP. 1
OVERTEMP. 2
OVERTEMP. 3
OVERTEMP. 4
LOGIC
LOGIC
DRIVER 1
I
OUT1
DRIVER 2
I
OUT2
OVERVOLTAGE
UNDERVOLTAGE
DRIVER 3
I
OUT3
DRIVER 4
I
OUT4
DEMAG 1
I
LIM1
K
DEMAG 2
I
LIM2
K
DEMAG 3
I
LIM3
K
DEMAG 4
I
LIM4
K
OUTPUT 1
CURRENT SENSE 1
OUTPUT 2
CURRENT SENSE 2
V
3,4
CC
OUTPUT 3
CURRENT SENSE 3
OUTPUT 4
CURRENT SENSE 4
5/26
Page 6
Block diagram and pin description VNQ600

Figure 2. Configuration diagram (top view)

15
28
V
1,2
CC
OUTPUT 2
OUTPUT 2
OUTPUT 2
OUTPUT 1
OUTPUT 1
OUTPUT 1
OUTPUT 4
OUTPUT 4
OUTPUT 4
OUTPUT 3
OUTPUT 3
OUTPUT 3
3,4
V
CC
VCC1,2
1
GND 1,2
INPUT2
INPUT1
CURRENT
CURRENT
SENSE 1
SENSE 2
V
1,2
CC
3,4
V
CC
GND 3,4
INPUT4
INPUT3
CURRENT SENSE 3
CURRENT SENSE 4
V
3,4
CC

Table 2. Suggested connections for unused and not connected pins

14
Connection / pin Current sense N.C. Output Input
Floating X X X
To ground
Through 1KΩ
resistor
X
Through 10KΩ
resistor
6/26
Page 7
VNQ600 Electrical specifications

2 Electrical specifications

2.1 Absolute maximum ratings

Stressing the device above the rating listed in the “Absolute maximum ratings” table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality document.

Table 3. Absolute maximum rating

Symbol Parameter Value Unit
V
-V
I
OUT
I
I
V
CSENSE
I
GND
V
ESD
E
MAX
P
T
T
Supply voltage (continuous) 41 V
CC
Reverse supply voltage (continuous) -0.3 V
CC
Output current (continuous), for each channel 15 A
Reverse output current (continuous), for each channel -15 A
R
Input current +/- 10 mA
IN
Current sense maximum voltage
Ground current at T
< 25 °C (continuous) -200 mA
pins
-3
+15
Electrostatic discharge (Human Body Model: R=1.5KΩ; C=100pF)
- INPUT
- CURRENT SENSE
- OUTPUT
- V
CC
Maximum switching energy (L=0.11mH; R
Power dissipation (per island) at T
tot
Junction operating temperature Internally limited °C
j
Storage temperature -55 to 150 °C
stg
=0Ω; V
L
=13.5V; T
bat
=150ºC; IL=40A)
jstart
=25°C 6.25 W
lead
4000 2000 5000 5000
126 mJ
V V
V V V V
7/26
Page 8
Electrical specifications VNQ600

2.2 Thermal data

Table 4. Thermal data (per island)

Symbol Parameter Value Unit
R
thj-lead
R
thj-amb
R
thj-amb
Thermal resistance junction-lead 20 °C/W
Thermal resistance junction-ambient (one chip ON)
Thermal Resistance junction-ambient (two chips ON)
1. When mounted on a standard single-sided FR-4 board with 0.5cm2 of Cu (at least 35 µm thick) connected to all V
2. When mounted on a standard single-sided FR-4 board with 6cm2 of Cu (at least 35 µm thick) connected to all V
pins. Horizontal mounting and no artificial air flow.
CC
pins. Horizontal mounting and no artificial air flow.
CC

2.3 Electrical characteristics

Values specified in this section are for 8V<VCC<36V; -40°C< Tj <150°C, unless otherwise stated.

Figure 3. Current and voltage conventions

I
S3,4
V
CC3,4
I
IN1
V
SENSE3
I
SENSE1
I
IN2
I
SENSE2
I
IN3
I
SENSE3
I
IN4
I
SENSE4
V
IN4
V
STAT4
V
IN1
V
SENSE1
V
IN2
V
SENSE2
V
IN3
V
CC3,4
INPUT1
CUR. SENSE1
INPUT2
CUR. SENSE2
INPUT3
CUR. SENSE3
INPUT4
CUR. SENSE4
GND
3,4
I
GND3,4
V
CC1,2
OUTPUT1
OUTPUT2
OUTPUT3
OUTPUT4
GND
(1)
60
(1)
46
V
F1
I
OUT1
I
OUT2
I
OUT3
V
OUT3
I
OUT4
V
OUT4
1,2
I
GND1,2
I
V
S1,2
OUT2
45
31
(2)
(2)
V
OUT1
V
°C/W
°C/W
CC1,2
Note: V
Fn
= V
CCn
- V
during reverse battery condition.
OUTn
8/26
Page 9
VNQ600 Electrical specifications

Table 5. Power

Symbol Parameter Test conditions Min. Typ. Max. Unit
V
V
USD
V
R
V
clamp
I
I
L(off1)
I
L(off2)
I
L(off3)
I
L(off4)
Operating supply voltage 5.5 13 36 V
CC
Undervoltage shutdown 3 4 5.5 V
Overvoltage shutdown 36 V
OV
I
1,2,3,4=5A; Tj=25°C
OUT
On state resistance
ON
I
1,2,3,4=5A; Tj=150°C
OUT
1,2,3,4=3A; V
I
OUT
CC
=6V
Clamp voltage ICC=20mA 41 48 55 V
Off State; VCC=13V;
12
12
Supply current
S
Off state output current VIN=V
Off state output current VIN=0V; V
Off state output current
Off state output current
VIN=V
OUT
Off State; V VIN=V
OUT
=25°C
T
j
On State; V I
=0A; R
OUT
OUT
VIN=V
OUT
=125°C
T
j
VIN=V
OUT
=25°C
T
j
=0V
=13V;
CC
=0V;
=13V; VIN=5V;
CC
=3.9KΩ
SENSE
=0V 0 50 µA
=3.5V -75 0 µA
OUT
=0V; VCC=13V;
=0V; VCC=13V;
35
mΩ
70
mΩ
120
40
25
mΩ
µA
µA
mA
6
5µA
3µA
Note: V
and VOV are correlated. Typical difference is 5V.
clamp

Table 6. Protections

Symbol Parameter Test conditions Min. Typ. Max. Unit
I
T
T
T
V
demag
V
=13V
DC Short circuit
lim
current
V
CC
5.5V<VCC<36V
Thermal shutdown
TSD
temperature
Thermal reset
R
temperature
Thermal hysteresis 7 15 °C
hyst
Turn-off output voltage clamp
Output voltage drop
ON
limitation
=2A; L=6mH VCC-41 VCC-48 VCC-55 V
I
OUT
=0.5A; Tj= -40°C...+150°C 50 mV
I
OUT
25 40 70
70
A A
150 175 200 °C
135 °C
Note: To ensure long term reliability under heavy overload or short circuit conditions, protection
and related diagnostic signals must be used together with a proper software strategy. If the device is subjected to abnormal conditions, this software must limit the duration and number of activation cycles.
9/26
Page 10
Electrical specifications VNQ600
.
Table 7. Switching (VCC=13V; Tj=25°C)
Symbol Parameter Test conditions Min. Typ. Max. Unit
RL=2.6Ω channels 1,2,3,4 (see Figure 5)
RL=2.6Ω channels 1,2,3,4 (see Figure 5)
RL=2.6Ω channels 1,2,3,4 (see Figure 5)
RL=2.6Ω channels 1,2,3,4 (see Figure 5)
40 µs
40 µs
See
Figure 10
See
Figure 12
t
d(on)
t
d(off)
(dV
/dt)onTurn-on voltage slope
OUT
/dt)
(dV
OUT
Turn-on delay time
Turn-off delay time
Turn-off voltage slope
off

Table 8. Current sense (9V< VCC< 16V)

Symbol Parameter Test conditions Min. Typ. Max. Unit
I
K
dK
1/K1
K
dK2/K
K
dK
3/K3
V
SENSE1,2
V
SENSEH
I
1
OUT/ISENSE
Current sense ratio drift
I
2
OUT/ISENSE
Current sense ratio
2
drift
I
3
OUT/ISENSE
Current sense ratio drift
Max analog sense output voltage
Analog sense output voltage in overtemperature condition
or I
OUT1
V
SENSE
open; Tj= -40°C...150°C
or I
I
OUT1
V
SENSE
open; Tj= -40°C...150°C
I
or I
OUT1
other channels open;
=-40°C
T
j
=25°C...150°C
T
j
or I
I
OUT1
V
SENSE
open;
=-40°C...150°C
T
j
I
or I
OUT1
other channels open;
=-40°C
T
j
=25°C...150°C
T
j
I
or I
OUT1
other channels open;
=-40°C...150°C
T
j
V
=5.5V; I
CC
R
SENSE
VCC>8V, I R
SENSE
= 13V; R
V
CC
=0.5A;
OUT2
=0.5V; other channels
=0.35A;
OUT2
=0.5V; other channels
OUT2
OUT2
=5A; V
=2A;
SENSE
=4V;
=2.5V; other channels
OUT2
OUT2
=15A; V
=15A; V
OUT1,2
=2.5A;
SENSE
SENSE
=4V;
=4V;
=10kΩ
=5A;
OUT1,2
=10kΩ
= 3.9kΩ 5.5 V
SENSE
3300 4400 6000
-10 +10 %
4200 4400
4900 4900
6000 5750
-6 +6 %
4200 4400
4900 4900
5500 5250
-6 +6 %
2
4
V/ µs
V/ µs
V
V
10/26
Page 11
VNQ600 Electrical specifications
Table 8. Current sense (9V< VCC< 16V) (continued)
Symbol Parameter Test conditions Min. Typ. Max. Unit
Analog sense output
R
VSENSEH
Impedance in overtemperature condition
=13V; Tj>T
V
CC
All channels open
TSD
;
400 Ω
t
DSENSE
1. Current sense signal delay after positive input slope.

Table 9. Logic inputs

Current sense delay response
To 9 0% I
SENSE
(1)
500 µs
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
V
V
I(hyst)
I
I
V

Table 10. VCC - output diode

Low level input voltage 1.25 V
IL
High level input voltage 3.25 V
IH
Input hysteresis voltage 0.5 V
Input current VIN=1.5V 1 µA
IL
Input current VIN=3.5V 10 µA
IN
Input clamp voltage
ICL
IIN=1mA
= -1mA
I
IN
66.8
-0.7
8V
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
F
Forward on voltage -I
=2.30A; Tj=150°C 0.6 V
OUT
V
Figure 4. I
I
OUT/ISENSE
6500
6000
5500
5000
4500
4000
3500
3000
OUT/ISENSE
versus I
OUT
max.Tj=-40°C
max.Tj=25...150°C
min.Tj=25...150°C
typical value
min.Tj=-40°C
0246810121416
I
(A)
OUT
11/26
Page 12
Electrical specifications VNQ600

Figure 5. Switching characteristics

V
OUT
dV
/dt
OUT
(on)
I
SENSE
INPUT

Table 11. Truth table

t
d(on)
80%
90%
t
DSENSE
90%
dV
/dt
OUT
(off)
t
r
10%
t
d(off)
t
f
t
t
t
Conditions Input Output Sense
Normal operation
Overtemperature
Undervoltage
Overvoltage
Short circuit to GND
Short circuit to V
CC
Negative output voltage clamp
L
H
L
H
L
H
L
H
L H H
L H
LL0
L H
L L
L L
L L
L L L
H H
(Tj>T
0
Nominal
0
V
SENSEH
0 0
0 0
0
(T
j<TTSD
) V
TSD
0
< Nominal
) 0
SENSEH
12/26
Page 13
VNQ600 Electrical specifications

Table 12. Electrical transient requirements

ISO T/R
7637/1
Test levelsITest levelsIITest levels
Tes t pul se
1 -25V -50V -75V -100V 2ms, 10Ω
2 +25V +50V +75V +100V 0.2ms, 10Ω
3a -25V -50V -100V -150V 0.1µs, 50Ω
3b +25V +50V +75V +100V 0.1µs, 50Ω
4 -4V -5V -6V -7V 100ms, 0.01Ω
5 +26.5V +46.5V +66.5V +86.5V 400ms, 2Ω
ISO T/R
7637/1
Test levels resultITest levels resultIITest levels result
Tes t pul se
1C C C C
2C C C C
3a C C C C
3b C C C C
4C C C C
5C E E E
Class Contents
C
E
All functions of the device are performed as designed after exposure to disturbance. One or more functions of the device is not performed as designed after exposure and cannot be returned to proper operation without replacing the device.
Test levels
III
IV
Test levels
delays and impedance
Test levels result
III
IV
13/26
Page 14
Electrical specifications VNQ600

Figure 6. Waveforms

NORMAL OPERATION
INPUT
n
LOAD CURRENT
SENSE
n
V
CC
INPUT
n
LOAD CURRENT
SENSE
n
V
CC
INPUT
n
LOAD CURRENT SENSE
n
n
UNDERVOLTAGE
V
USDhyst
V
USD
n
OVERVOLTAGE
V
OV
VCC < V
OV
n
VCC > V
OV
INPUT
n
LOAD CURRENT LOAD VOLTAGE SENSE
n
INPUT
n
LOAD VOLTAGE LOAD CURRENT
SENSE
n
T
j
INPUT
n
LOAD CURRENT
SENSE
n
SHORT TO GROUND
n
n
SHORT TO V
n
n
<Nominal
T
TSD
T
R
n
OVERTEMPERATURE
CC
<Nominal
I
SENSE
=
V
SENSEH
R
SENSE
14/26
Page 15
VNQ600 Electrical specifications

2.4 Electrical characteristics curves

Figure 7. Off state output current Figure 8. High level input current
IL(o ff1) (u A)
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
Off state Vcc=36V
Vin=Vout=0V
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
Iih (uA )
5
4.5
Vi n=3. 25V
4
3.5
3
2.5
2
1.5
1
0.5
0
-50 -25 0 25 50 75 100 125 150 175
Tc (°C )

Figure 9. Input clamp voltage Figure 10. Turn-on voltage slope

Vicl (V)
8
7.8
7.6
7.4
7.2
6.8
6.6
6.4
6.2
Ii n =1m A
7
6
-50 -25 0 25 50 75 100 125 150 175
Tc (°C )

Figure 11. Overvoltage shutdown Figure 12. Turn-off voltage slope

Vov (V)
50
48
46
44
42
40
38
36
34
32
30
-50 -25 0 25 50 75 100 125 150 175
Tc (°C )
15/26
Page 16
Electrical specifications VNQ600
Figure 13. I
vs T
LIM
case
Ilim (A)
20
18
16
14
12
10
Vcc=13V
8
6
4
2
0
-50 -25 0 25 50 75 100 125 150 175
Tc (°C )
Figure 14. On state resistance vs V
Ron (mOhm)
80
70
60
50
40
30
20
10
0
5 10152025303540
Io u t =5 A
Tc = 150°C
Tc = 25°C
Tc= - 40°C
Vcc (V)

Figure 15. Input high level Figure 16. Input hysteresis voltage

Vih (V)
3.6
3.4
3.2
3
2.8
2.6
2.4
2.2
2
-50 -25 0 25 50 75 100 12 5 150 175
Tc (°C)
Vhyst (V)
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
-50 -25 0 25 50 75 100 12 5 150 175
Tc (°C)

Figure 17. On state resistance vs Tcase Figure 18. Input low level

CC
Ron (mOhm)
100
90
80
70
60
50
40
30
20
10
0
Io u t=5 A
Vc c=8V & 36V
-75 -50 -25 0 25 50 75 100 125 150 175
Tc (°C)
16/26
Vil (V)
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
-50 -25 0 25 50 75 100 125 150 175
Tc (°C )
Page 17
VNQ600 Application information

3 Application information

Figure 19. Application schematic

+5V
R
prot
R
prot
R
prot
µ
C
R
prot
R
prot
R
prot
R
prot
R
prot
INPUT1
C. SENSE 1
INPUT2
C. SENSE 2
INPUT3
C. SEN SE 3
INPUT4
C. SENSE 4
GND1,2
V
CC1,2
V
OUTPUT1
OUTPUT2
OUTPUT3
OUTPUT4
GND3,4
CC3,4
D
ld
R
SENSE1,2,3,4
R
V
GND
GND
D
GND
Note: Channels 3 & 4 have the same internal circuit as channel 1 & 2.

3.1 GND protection network against reverse battery

This section provides two solutions for implementing a ground protection network against reverse battery.
3.1.1 Solution 1: a resistor in the ground line (R
This can be used with any type of load.
The following show how to dimension the R
1. R
2. R
where -I
≤ 600mV / 2(I
GND
≥ (−VCC) / (-I
GND
is the DC reverse ground pin current and can be found in the absolute
GND
S(on)max
GND
)
)
maximum rating section of the device datasheet.
Power dissipation in R
P
= (-VCC)2/R
D
GND
(when VCC<0 during reverse battery situations) is:
GND
GND
resistor:
GND
only)
17/26
Page 18
Application information VNQ600
This resistor can be shared amongst several different HSDs. Please note that the value of this resistor should be calculated with formula (1) where I
S(on)max
becomes the sum of the
maximum on-state currents of the different devices.
Please note that, if the microprocessor ground is not shared by the device ground, then the R
will produce a shift (I
GND
S(on)max
* R
) in the input thresholds and the status output
GND
values. This shift will vary depending on how many devices are ON in the case of several high side drivers sharing the same R
GND
.
If the calculated power dissipation requires the use of a large resistor, or several devices have to share the same resistor, then ST suggests using solution 2 below.
3.1.2 Solution 2: a diode (D
) in the ground line
GND
A resistor (RGND=1kΩ) should be inserted in parallel to DGND if the device will be driving an inductive load. This small signal diode can be safely shared amongst several different HSD. Also in this case, the presence of the ground network will produce a shift (j600mV) in the input threshold and the status output values if the microprocessor ground is not common with the device ground. This shift will not vary if more than one HSD shares the same diode/resistor network. Series resistor in INPUT and STATUS lines are also required to prevent that, during battery voltage transient, the current exceeds the Absolute Maximum Rating. Safest configuration for unused INPUT and STATUS pin is to leave them unconnected.

3.2 Load dump protection

Dld is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds the V
maximum DC rating. The same applies if the device is subject to transients on the VCC
CC
line that are greater than those shown in the ISO T/R 7637/1 table.

3.3 MCU I/O protection

If a ground protection network is used and negative transients are present on the VCC line, the control pins will be pulled negative. ST suggests to insert a resistor (R prevent the µC I/O pins from latching up.
) in line to
prot
The value of these resistors is a compromise between the leakage current of µC and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of µC I/Os:
-V
CCpeak/Ilatchup
≤ R
prot
≤ (V
OHµC-VIH-VGND
Example
For the following conditions:
V
I
latchup
V
5kΩ ≤ R
Recommended values are:
R
18/26
CCpeak
OHµC
=10kΩ
prot
= - 100V
≥ 20mA
≥ 4.5V
≤ 65kΩ.
prot
) / I
IHmax
Page 19
VNQ600 Application information

3.4 Maximum demagnetization energy (VCC = 13.5V)

Figure 20. Maximum turn-off current versus load inductance

LMAX (A)
I
100
A
B
C
10
1
0.001 0.01 0.1 1 10 100 L(mH)
A = Single Pulse at T
Jstart
B= Repetitive pulse at T
C= Repetitive Pulse at T
VIN, I
L
Demagnetization
Note: Values are generated with R
In case of repetitive pulses, T must not exceed the temperature specified above for curves B and C.
=150ºC
=100ºC
Jstart
=125ºC
Jstart
Demagnetization
=0Ω.
L
(at beginning of each demagnetization) of every pulse
jstart
Demagnetization
t
19/26
Page 20
Package and PCB thermal data VNQ600

4 Package and PCB thermal data

4.1 SO-28 thermal data

Figure 21. SO-28 PC board

Note: Layout condition of R
thickness=2mm, Cu thickness=35µm, Copper areas: 0.5 cm

Table 13. Thermal calculation according to the PCB heatsink area

Chip 1 Chip 2 T
ON OFF R
OFF ON R
ON ON
ON ON
= Thermal resistance Junction to Ambient with one chip ON
R
thA
R
= Thermal resistance Junction to Ambient with both chips ON and P
thB
R
= Mutual thermal resistance
thC
R T
(R P
amb
thA
thC
thB
dchip2
and Zth measurements (PCB FR4 area= 58mm x 58mm, PCB
thA
th
x P
x P
x (P
x P
+ T
dchip1
dchip2
dchip1
dchip1
amb
jchip1
+ T
+ T
+ P
) + R
amb
amb
dchip2
thC
x
) +
R
thC
R
thA
R
thB
T
amb
(R P
dchip1
thA
x P
x P
x (P
x P
+ T
dchip1
dchip2
dchip1
dchip2
amb
2
, 3 cm2, 6 cm2).
T
jchip2
+ T
amb
+ T
amb
+ P
dchip2
) + R
thC
x
) +
dchip1=Pdchip2
P
dchip1=Pdchip2
P
dchip1≠Pdchip2
Note
20/26
Page 21
VNQ600 Package and PCB thermal data
j
Figure 22. R
_am b
RTH
(°C /W)
70
60
50
40
30
20
10
012345 67
Vs PCB copper area in open box free air condition
thj-amb
PCB Cu heatsink area (cm^2)/is land

Figure 23. Thermal impedance junction ambient single pulse

Zth(°C /W)
100
10
1
0.1
0.01
0.0001 0.001 0.01 0.1 1 10 100 1000
time(s )
0,5 c m ^2/is land
3 cm ^2/is land
6 cm ^2/is land
One channel ON
Two channels ON on same chip
21/26
Page 22
Package and PCB thermal data VNQ600
Equation 1: pulse calculation formula
Z
where
THδ
R
δ tpT⁄=
TH
δ Z
THtp
1 δ–()+⋅=

Figure 24. Thermal fitting model of a quad channel HSD in SO-28

Tj_1
Pd1
Tj_2
Pd2
Tj_3
Pd3
Tj_4
Pd4
C1
C13 C14
R13
C7
C15 C16
R15
R14
R16
C8
R8
C3 C4
R3R1 R6R5R2
R17
C9
R9R7
R18
C10
C5 C6C2
R4
C11 C12
R10
R12R11

Table 14. Thermal parameters

Area/island (cm2)0.56
R1=R7=R13=R15 (°C/W) 0.05
R2=R8=R14=R16 (°C/W) 0.3
R3=R9 (°C/W) 3.4
R4=R10 (°C/W) 11
R5=R11 (°C/W) 15
R6=R12 (°C/W) 30 13
C1=C7=C13=C15 (W.s/°C) 0.001
C2=C8=C14=C16 (W.s/°C) 5.00E-03
C3=C9 (W.s/°C) 1.00E-02
C4=C10 (W.s/°C) 0.2
C5=C11 (W.s/°C) 1.5
C6=C12 (W.s/°C) 5 8
R17=R18 (°C/W) 150
T_amb
22/26
Page 23
VNQ600 Package and packing information

5 Package and packing information

5.1 ECOPACK® packages

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second-level interconnect. The category of Second-Level Interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com.

Figure 25. SO-28 package dimensions

Table 15. SO-28 mechanical data

Symbol
Min. Typ. Max.
A 2.65
a1 0.10 0.30
b 0.35 0.49
b1 0.23 0.32
C0.50
c1 45° (typ.)
D 17.7 18.1
E 10.00 10.65
e1.27
e3 16.51
F 7.40 7.60
L 0.40 1.27
S 8° (max.)
Millimeters
23/26
Page 24
Package and packing information VNQ600

5.2 SO-28 packing information

Figure 26. SO-28 tube shipment (no suffix)

Base Q.ty 28 Bulk Q.ty 700 Tube length (± 0.5) 532 A 3.5
C
B
A

Figure 27. SO-28 tape and reel shipment (suffix “TR”)

B 13.8 C (± 0.1) 0.6
All dimensions are in mm.
Reel dimensions
Tape dimensions
According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb. 1986
Tape width W 16 Tape Hole Spacing P0 (± 0.1) 4 Component Spacing P 12 Hole Diameter D (± 0.1/-0) 1.5 Hole Diameter D1 (min) 1.5 Hole Position F (± 0.05) 7.5 Compartment Depth K (max) 6.5 Hole Spacing P1 (± 0.1) 2
All dimensions are in mm.
Top
cover
tape
End
500mm min
Base Q.ty 1000 Bulk Q.ty 1000 A (max) 330 B (min) 1.5 C (± 0.2) 13 F 20.2 G (+ 2 / -0) 16.4 N (min) 60 T (max) 22.4
Empty components pockets saled with cover tape.
User direction of feed
Start
No componentsNo components Components
500mm min
24/26
Page 25
VNQ600 Revision history

6 Revision history

Table 16. Document revision history

Date Revision Changes
Nov-2004 1 Initial release.
02-Jul-2004 2 Added Table 16: Document revision history.
22-Jul-2004 3 Updated disclaimer.
14-Aug-2004 4 Updated Figure 3: Current and voltage conventions.
04-Apr-2005 5 Added Figure 2.: Configuration diagram (top view).
17-Apr-2005 6
29-May-2006 7 Updated Table 14: Thermal parameters: added 6 cm
19-Nov-2006 8 Updated Ta ble 10 : V
18-Jul-2007 9 Updated Table 6: Protections: added note.
11-Nov-2008 10 Document converted to corporate template.
Added Table 2: Suggested connections for unused and not
connected pins.
2
Cu condition.
- output diode.
CC
25/26
Page 26
VNQ600
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