Datasheet VNQ5E160AK-E Datasheet (ST)

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Page 1

Quad channel high side driver with analog current sense

Features

Max supply voltage V

Operating voltage range V

Max on-state resistance (per ch.) R

Current limitation (typ) I

Off state supply current I

1. Typical value with all loads connected.

■ General

– Inrush current active management by

power limitation – Very low stand-by current – 3.0 V CMOS compatible inputs – Optimized electromagnetic emissions – Very low electromagnetic susceptibility – In compliance with the 2002/95/EC

european directive – Very low current sense leakage

■ Diagnostic functions

– Proportional load current sense – High current sense precision for wide

currents range – Current sense disable – Off state openload detection – Output short to Vcc detection – Thermal shutdown indication – Overload and short to ground (power

limitation) indication

■ Protections

– Undervoltage shutdown – Overvoltage clamp – Load current limitation – Self limiting of fast thermal transients – Protection against loss of ground and loss

of V

– Over-temperature shutdown with

autorestart (thermal shutdown) – Reverse battery protected (see Figure 32)

LIMH

4.5 to 28 V

160 mΩ

2 µA

41V

10 A

(1)

VNQ5E160AK-E

for automotive applications

PowerSSO-24

– Electrostatic discharge protection

Application

■ All types of resistive, inductive and capacitive

loads

■ Suitable as LED driver

Description

The VNQ5E160AK-E is a double channel highside driver manufactured in the ST proprietary VIPower M0-5 technology and housed in the tiny PowerSSO-24 package. The VNQ5E160AK-E is designed to drive 12V automotive grounded loads delivering protection, diagnostics and easy 3V and 5V CMOS compatible interface with any microcontroller.

The device integrates advanced protective functions such as load current limitation, inrush and overload active management by power limitation, over-temperature shut-off with auto-restart and over-voltage active clamp. A dedicated analog current sense pin is associated with every output channel in order to provide Ehnanced diagnostic functions including fast detection of overload and short-circuit to ground through power limitation indication, overtemperature indication, short-circuit to Vcc diagnosis and on & off state open load detection.

The current sensing and diagnostic feedback of the whole device can be disabled by pulling the CS_DIS pin high to allow sharing of the external sense resistor with other similar devices.

March 2009 Rev 2 1/37

www.st.com

Page 2

Contents VNQ5E160AK-E

Contents

1 Block diagram and pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

2.3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

2.4 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

2.5 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

3 Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

3.1 GND protection network against reverse battery . . . . . . . . . . . . . . . . . . . 24

3.1.1 Solution 1 : resistor in the ground line (RGND only) . . . . . . . . . . . . . . . 24

3.1.2 Solution 2 : diode (DGND) in the ground line . . . . . . . . . . . . . . . . . . . . 25

3.2 Load dump protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

3.3 MCU I/Os protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

3.4 Current sense and diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

3.4.1 Short to VCC and off state open load detection . . . . . . . . . . . . . . . . . . 27

3.5 Maximum demagnetization energy (VCC = 13.5V) . . . . . . . . . . . . . . . . . 28

4 Package and PC board thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

4.1 PowerSSO-24 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

5 Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

5.1 ECOPACK® . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

5.2 PowerSSO-24 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

5.3 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

6 Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35

7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36

2/37

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VNQ5E160AK-E List of tables

List of tables

Table 1. Pin functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Table 2. Suggested connections for unused and not connected pins . . . . . . . . . . . . . . . . . . . . . . . . 6

Table 3. Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Table 4. Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Table 5. Power section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Table 6. Switching (VCC = 13V; Tj = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Table 7. Logic Inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Table 8. Protections and diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Table 9. Current sense (8V<V Table 10. Openload detection (8V<V

Table 11. Truth table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Table 12. Electrical transient requirements (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Table 13. Electrical transient requirements (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Table 14. Electrical transient requirements (part 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Table 15. Thermal parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

Table 16. PowerSSO-24 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33

Table 17. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35

Table 18. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36

<18V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

<18V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

3/37

Page 4

List of figures VNQ5E160AK-E

List of figures

Figure 1. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Figure 2. Configuration diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Figure 3. Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Figure 4. Current sense delay characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Figure 5. Openload off-state delay timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Figure 6. Switching characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Figure 7. Delay response time between rising edge of ouput current and rising edge of current sense

(CS enabled). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Figure 8. Output voltage drop limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Figure 9. Iout/ Isense vs. Iout. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Figure 10. Maximum current sense ratio drift vs load current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Figure 11. Normal operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Figure 12. Overload or short to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Figure 13. Intermittent overload . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Figure 14. Off-state open load with external circuitry. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Figure 15. Short to V Figure 16. T

evolution in overload or short to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Figure 17. Off state output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Figure 18. High level input current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Figure 19. Input clamp voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Figure 20. Input low level voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Figure 21. Input high level voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Figure 22. Input hysteresis voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Figure 23. On state resistance vs. T Figure 24. On state resistance vs. V

Figure 25. Undervoltage shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Figure 26. Turn-on voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Figure 27. I

LIMH

vs. T

Figure 28. Turn-off voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Figure 29. CS_DIS high level voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

Figure 30. CS_DIS clamp voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

Figure 31. CS_DIS low level voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

Figure 32. Application schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

Figure 33. Current sense and diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

Figure 34. Maximum turn-off current versus inductance (for each channel) . . . . . . . . . . . . . . . . . . . . 28

Figure 35. PowerSSO-24 PC board. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

Figure 36. Rthj-amb vs. PCB copper area in open box free air condition (one channel ON). . . . . . . . 29

Figure 37. PowerSSO-24 thermal impedance junction ambient single pulse (one channel ON). . . . . 30

Figure 38. Thermal fitting model of a double channel hsd in PowerSSO-24 . . . . . . . . . . . . . . . . . . . 30

Figure 39. PowerSSO-24 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

Figure 40. PowerSSO-24 tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

Figure 41. PowerSSO-24 tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

case

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

case

4/37

Page 5

VNQ5E160AK-E Block diagram and pin configuration

1 Block diagram and pin configuration

Figure 1. Block diagram

Signal Clamp

Undervoltage

IN1

IN2

IN3

IN4

CS_ DIS

CS1

CS2

CS3

CS4

Table 1. Pin functions

LOGIC

Control & Diagnostic 1

DRIVER

Over

temp.

SENSEH

(ACTIVE POWER LIMITATION)

Current

Limitation

Current

Sense

OVERLOAD PROTECTION

Power Clamp

Limitation

OFF State Open load

CH 1

Channels 2, 3 & 4

CONTROL & DIAGNOSTIC

CH 2

GND

Name Function

OUTPUT

GND

INPUT

CURRENT

SENSE

Battery connection

Power output

Ground connection. Must be reverse battery protected by an external diode/resistor network

Voltage controlled input pin with hysteresis, CMOS compatible. Controls output switch state

Analog current sense pin, delivers a current proportional to the load current

CS_DIS Active high CMOS compatible pin, to disable the current sense pin

CH 4

CH 3

OUT4

OUT3

OUT2

OUT1

5/37

Page 6

Block diagram and pin configuration VNQ5E160AK-E

Figure 2. Configuration diagram (top view)

GND

INPUT1

CURRENT SENSE1

INPUT2

CURRENT SENSE2

INPUT3

CURRENT SENSE3

INPUT4

CURRENT SENSE4

CS_DIS.

OUTPUT1 OUTPUT1 OUTPUT1 OUTPUT2 OUTPUT2 OUTPUT2 OUTPUT3 OUTPUT3 OUTPUT3 OUTPUT4 OUTPUT4 OUTPUT4

TAB = V

Table 2. Suggested connections for unused and not connected pins

Connection / pin Current Sense N.C. Output Input CS_DIS

Floating Not allowed X X X X

To ground

Through 1 kΩ

resistor

X Not allowed

Through 10

kΩ resistor

Through 10 kΩ

resistor

6/37

Page 7

VNQ5E160AK-E Electrical specifications

2 Electrical specifications

Figure 3. Current and voltage conventions

CSD

INn

CS_DIS

INPUTn

GND

OUTPUTn

CURRENT S

ENSEn

GND

SENSEn

OUTn

Note: V

= V

- VCC during reverse battery condition.

OUTn

2.1 Absolute maximum ratings

Stressing the device above the rating listed in the “Absolute maximum ratings” table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to the conditions in table below for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality document.

Table 3. Absolute maximum ratings

Symbol Parameter Value Unit

-V

-I

GND

OUT

-I

CSD

-I

CSENSE

DC supply voltage 41 V

Reverse DC supply voltage 0.3 V

DC reverse ground pin current 200 mA

DC output current Internally limited A

Reverse DC output current 6 A

OUT

DC input current -1 to 10 mA

DC current sense disable input current -1 to 10 mA

DC reverse CS pin current 200 mA

Current sense maximum voltage

Maximum switching energy (single pulse)

MAX

(L= 12 mH; R

=0Ω; V

=13.5V; T

bat

jstart

=150ºC; I

OUT

= I

limL

(Typ.) )

VCC-41

34 mJ

V V

7/37

Page 8

Electrical specifications VNQ5E160AK-E

Table 3. Absolute maximum ratings (continued)

Symbol Parameter Value Unit

Electrostatic discharge (human body model: R= 1.5 KΩ; C= 100 pF)

4000 2000 4000 5000 5000

V V V V V

ESD

- Input

- Current sense

- CS_DIS

- Output

- V

Charge device model (CDM-AEC-Q100-011) 750 V

Junction operating temperature -40 to 150 °C

Storage temperature -55 to 150 °C

stg

2.2 Thermal data

Table 4. Thermal data

Symbol Parameter Max. value Unit

thj-case

thj-amb

Thermal resistance junction-case (max) (with one channel ON)

Thermal resistance junction-ambient (max)

8°C/W

See Figure 36. in the

thermal section

°C/W

8/37

Page 9

VNQ5E160AK-E Electrical specifications

2.3 Electrical characteristics

Values specified in this section are for 8V<VCC<28V, -40°C< Tj <150°C, unless otherwise stated.

Table 5. Power section

Symbol Parameter Test conditions Min. Typ. Max. Unit

USDhyst

clamp

Operating supply voltage 4.5 13 28 V

Undervoltage shutdown 3.5 4.5 V

USD

Undervoltage shutdown hysteresis

= 1A; Tj= 25°C 160

OUT

On state resistance

(2)

= 1A; Tj= 150°C 320

OUT

= 1A; VCC= 5V; Tj= 25°C 210

OUT

Clamp voltage IS= 20 mA 41 46 52 V

Off State; V VIN=V

L(off1)

Supply current

Off state output current

(2)

OUT=VSENSE=VCSD

On State; V I

= 0A

OUT

VIN=V

= 0 V; VCC= 13 V;

OUT

Tj= 25°C

IN=VOUT

= 0 V; VCC= 13 V;

Tj= 125 °C

1. PowerMOS leakage included.

2. For each channel.

Table 6. Switching (VCC=13V; Tj= 25°C)

Output - VCC diode

voltage

(2)

-I

=1A; Tj=150°C 0.7 V

OUT

= 13 V; Tj= 25°C;

= 13V; VIN= 5 V;

= 0 V

0.5 V

mΩI

(1)

µA

814mA

00.01 3

µA

Symbol Parameter Test conditions Min. Typ. Max. Unit

(dV

d(on)

d(off)

OUT

OFF

Turn-on delay time RL= 13 Ω (see Figure 6.)20 µs

Turn-off delay time RL= 13 Ω (see Figure 6.)10 µs

/dt)onTurn-on voltage slope RL= 13 Ω

/dt)

Turn-off voltage slope RL= 13 Ω

off

Switching energy losses during t

won

Switching energy losses during t

woff

RL= 13 Ω (see Figure 6.)0.05 mJ

RL= 13 Ω (see Figure 6.)0.03 mJ

See

Figure 26.

See

Figure 28.

9/37

V/µs

Page 10

Electrical specifications VNQ5E160AK-E

Table 7. Logic Inputs

Symbol Parameter Test conditions Min. Typ. Max. Unit

I(hyst)

ICL

CSDL

CSDH

CSD(hyst)

CSCL

Table 8. Protections and diagnostics

Input low level voltage 0.9 V

Low level input current VIN= 0.9V 1 µA

Input high level voltage 2.1 V

High level input current VIN= 2.1V 10 µA

Input hysteresis voltage 0.25 V

Input clamp voltage

CS_DIS low level voltage 0.9 V

Low level CS_DIS current V

CS_DIS high level voltage 2.1 V

High level CS_DIS current V

CS_DIS hysteresis voltage 0.25 V

CS_DIS clamp voltage

IIN= 1mA 5.5 7

= -1mA -0.7

= 0.9V 1 µA

CSD

= 2.1V 10 µA

CSD

= 1mA 5.5 7

CSD

= -1mA -0.7

CSD

(1)

Symbol Parameter Test conditions Min. Typ. Max. Unit

limH

limL

TSD

HYST

DEMAG

1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be used together with a proper software strategy. If the device is subjected to abnormal conditions, this software must limit the duration and number of activation cycles.

DC short circuit current

Short circuit current during thermal cycling

Shutdown temperature 150 175 200 °C

Reset temperature

Thermal reset of STATUS

Thermal hysteresis (T

Turn-off output voltage clamp

TSD-TR

)

OUT

Output voltage drop limitation

VCC= 13V

<28V

5V<V

= 13V; TR<Tj<T

= 1A; VIN= 0; L= 20mH

= 0.03A;

OUT

= -40°C...150°C

(see Figure 8.)

TSD

7101414A

2.5 A

TRS + 1

TRS + 5

135 °C

7°C

VCC-41

VCC-46 VCC-52

25 mV

°C

10/37

Page 11

VNQ5E160AK-E Electrical specifications

Table 9. Current sense (8V<VCC<18V)

Symbol Parameter Test conditions Min. Typ. Max. Unit

= 0.025 A;

OUT

1/K1

2/K2

OUT/ISENSE

(1)

Current sense ratio drift

OUT/ISENSE

(1)

Current sense ratio drift

V T

I V T Tj= 25°C...150°C

I V T

I V T T

I V

= 0.5 V; V

SENSE

= -40°C...150°C 330 600 870

= 0.35A;

OUT

= 0.5 V; V

SENSE

= -40°C...150°C

= 0.35 A;

OUT

= 0.5 V; V

SENSE

= -40°C...150°C

= 0.5A;

OUT

=4V; V

SENSE

=-40°C...150°C

= 25°C...150°C

= 0.5 A;

OUT

= 4 V; V

SENSE

CSD

= 0 V;

345

475

395

475

- 12 12 %

375

470

415

470

- 8 8 %

Tj= -40°C...150°C

600 555

565 525

3/K3

SENSE0

SENSE

OUT/ISENSE

(1)

Current sense ratio drift

Analog sense leakage current

Openload on state current detection threshold

Max analog sense output voltage

= 1.5 A;

OUT

V T T

I V

= 4 V; V

SENSE

= -40°C...150°C

= 25°C...150°C

= 1.5 A;

OUT

= 4 V; V

SENSE

Tj= -40°C...150°C

= 0 A; V

OUT

CSD

= -40°C...150°C

= 0 A; V

OUT

CSD

= -40°C...150°C

= 1A; V

OUT

CSD

SENSE

= 5 V; VIN= 0 V;

SENSE

= 0 V; VIN= 5 V;

SENSE

= 5V; VIN= 5V;

Tj= -40°C...150°C

VIN = 5V,

= 5 µA

SENSE

= 1.5 A; V

OUT

CSD

= 0 V;

CSD

425

465

505

435

465

495

CSD

= 0 V;

- 6 6 %

= 0 V;

= 0V;

15mA

= 0 V 5 V

µA

SENSEH

Analog sense output voltage in fault condition

(2)

VCC= 13 V; R

= 3.9 KΩ; 8V

SENSE

11/37

Page 12

Electrical specifications VNQ5E160AK-E

Table 9. Current sense (8V<VCC<18V) (continued)

Symbol Parameter Test conditions Min. Typ. Max. Unit

Analog sense output

(2)

SENSEH

DSENSE1H

current in fault condition

(2)

Delay response time from falling edge of CS_DIS pin

VCC= 13V; V

V I

<4V, 0.025A<Iout<1.5A

SENSE

=90% of I

SENSE

(see Figure 4)

= 5 V; 9 mA

SENSE

SENSEMAX

40 100 µs

Delay response time

DSENSE1L

from rising edge of CS_DIS pin

Delay response time

DSENSE2H

from rising edge of INPUT pin

Delay response time

Δt

DSENSE2H

between rising edge of output current and rising edge of current sense

Delay response time

DSENSE2L

from falling edge of INPUT pin

1. Parameter guaranteed by design; it is not tested

2. Fault condition includes: power limitation, overtemperature and open load off state detection.

Table 10. Openload detection (8V<VCC<18V)

V I

(see Figure 4)

V I

(see Figure 4.)

V I I I

V I (see Figure 4.)

<4V, 0.025A<Iout<1.5A

SENSE

=10% of I

SENSE

<4V, 0.025A<Iout<1.5A

SENSE

=90% of I

SENSE

<4V,

SENSE

= 90% of I

SENSE

= 90% of I

OUT

OUTMAX

SENSE

=1.5A (see Figure 7)

<4V, 0.025A<Iout<1.5A

SENSE

=10% of I

SENSEMAX

SENSEMAX,

OUTMAX

SENSEMAX

520µs

120 300 µs

110 µs

80 250 µs

Symbol Parameter Test conditions Min. Typ. Max. Unit

Openload off state

voltage detection

24V

threshold

Output short circuit to

DSTKON

detection delay at

See Figure 5. 180 1200 µs

turn off

L(off2)r

L(off2)f

Off state output current at V

OUT

= 4V

Off state output current at V

OUT

= 2V

= 0 V; V

rising from 0 V to 4 V

OUT

= 0 V; V

falling from VCC to 2V

OUT

SENSE

= 0 V

= V

SENSEH

-120 0 µA

-50 90 µA

Delay response from

= 4 V; VIN= 0 V

td_vol

output rising edge to

SENSE

rising edge in

V openload

OUT

SENSE

= 90% of V

SENSEH

20 µs

12/37

Page 13

VNQ5E160AK-E Electrical specifications

Figure 4. Current sense delay characteristics

INPUT

CS_DIS

LOAD CURRENT

SENSE CURRENT

DSENSE2H

DSENSE1L

Figure 5. Openload off-state delay timing

OUTPUT STUCK TO V

Figure 6. Switching characteristics

OUT

Won

80%

Woff

90%

DSENSE1H

OUT

DSTKON

> V

SENSEH

DSENSE2L

OUT

INPUT

/dt

(on)

d(on)

/dt

OUT

(off)

10%

d(off)

13/37

Page 14

Electrical specifications VNQ5E160AK-E

Figure 7. Delay response time between rising edge of ouput current and rising

edge of current sense (CS enabled)

Δt

DSENSE2H

OUT

SENSE

90% I

OUTMAX

SENSEMAX

90% I

Figure 8. Output voltage drop limitation

Vcc-Vout

Tj=150oC

Von

Von/Ron(T)

SENSEMAX

Tj=25

Tj=-40

Iout

14/37

Page 15

VNQ5E160AK-E Electrical specifications

Figure 9. I

/ I

out

sense

700

650

max Tj = -40 °C to 150 °C

600

550

500

450

400

350

300

250

200

0,35 0,58 0,81 1,04 1,27 1,5

/ I

out

max Tj = 25 °C to 150 °C

min Tj = 25 °C to 150 °C

min Tj = -40 °C to 150 °C

sense

vs. I

out

typical value

(A)

OUT

Figure 10. Maximum current sense ratio drift vs load current

dk/k(%)

-5

-10

-15

0,35 0,58 0,81 1,04 1,27 1,5

(A)

OUT

Note: Parameter guaranteed by design; it is not tested.

15/37

Page 16

Electrical specifications VNQ5E160AK-E

Table 11. Truth table

Conditions Input Output Sense (V

Normal operation

CSD

Nominal

=0V)

(1)

Overtemperature

Undervoltage

Overload

Short circuit to GND (power limitation)

Open load off state (with external pull up)

Short circuit to V

(external pull up disconnected)

Negative output voltage clamp

1. If the V and external circuit.

is high, the SENSE output is at a high impedance, its potential depends on leakage currents

CSD

L L

SENSEH

0 0

Nominal

(no power limitation)

Cycling

SENSEH

(power limitation)

LHV

L L

H H

SENSEH

< Nominal

LL0

16/37

Page 17

VNQ5E160AK-E Electrical specifications

Table 12. Electrical transient requirements (part 1)

ISO 7637-2:

2004(E)

Test pulse

Test levels

(1)

Number of

pulses or

III IV Min. Max.

test times

Burst cycle/pulse

repetition time

Delays and Impedance

1 -75V -100V 5000 pulses 0.5s 5s 2 ms, 10Ω

2a +37V +50V 5000 pulses 0.2s 5s 50µs, 2Ω

3a -100V -150V 1h 90ms 100ms 0.1µs, 50Ω

3b +75V +100V 1h 90ms 100ms 0.1µs, 50Ω

4 -6V -7V 1 pulse 100ms, 0.01Ω

(2)

1. The above test levels must be considered referred to VCC= 13.5V except for pulse 5b.

2. Valid in case of external load dump clamp: 40V maximum referred to ground.

Table 13. Electrical transient requirements (part 2)

ISO 7637-2:

+65V +87V 1 pulse 400ms, 2Ω

Test level results

2004E

Test pul s e

III VI

1C C

2a C C

3a C C

3b C C

4C C

(1)

1. Valid in case of external load dump clamp: 40V maximum referred to ground.

Table 14. Electrical transient requirements (part 3)

Class Contents

C All functions of the device performed as designed after exposure to disturbance.

One or more functions of the device did not perform as designed after exposure to disturbance and cannot be returned to proper operation without replacing the device.

17/37

Page 18

Electrical specifications VNQ5E160AK-E

2.4 Waveforms

Figure 11. Normal operation

Normal operation

INPUT

Nominal load Nominal load

OUT

SENSE

CS_DIS

Figure 12. Overload or short to GND

Overload or Short to GND

INPUT

OUT

SENSE

CS_DIS

LimH

Power Limitation

LimL

Thermal cycling

18/37

Page 19

VNQ5E160AK-E Electrical specifications

Figure 13. Intermittent overload

Intermittent Overload

INPUT

Overload

LimH

LimL

OUT

SENSEH

SENSE

CS_DIS

Figure 14. Off-state open load with external circuitry

OFF-State Open Load

with external circuitry

Nominal load

INPUT

OUT

SENSE

CS_DIS

DSTK(on)

SENSEH

> V

OUT

19/37

Page 20

Electrical specifications VNQ5E160AK-E

Figure 15. Short to V

OUT

CS_DIS

Resistive

Short to V

DSTK(on)

Short to V

Hard

Short to V

> V

OUT

DSTK(on)

Figure 16. TJ evolution in overload or short to GND

TJ evolution in

Overload or Short to GND

INPUT

OUT

Self-limitation of fast thermal transients

J_START

Power Limitation

LimH

TSD

< I

HYST

LimL

20/37

Page 21

VNQ5E160AK-E Electrical specifications

2.5 Electrical characteristics curves

Figure 17. Off state output current Figure 18. High level input current

Iloff (mA)

200

Off State

150

100

-50 -25 0 25 50 75 100 125 150 175

Vcc=13V

Vin=Vout=0V

Tc (°C)

Iih (µA)

4,5

3,5

2,5

1,5

0,5

Vin= 2.1 V

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

Figure 19. Input clamp voltage Figure 20. Input low level voltage

Vicl (V)

6,8

6,6

6,4

6,2

5,8

5,6

5,4

5,2

lin= 1 mA

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

Vil (V)

1,8

1,6

1,4

1,2

0,8

0,6

0,4

0,2

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

Figure 21. Input high level voltage Figure 22. Input hysteresis voltage

Vih (V)

3,5

2,5

1,5

0,5

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

Vihyst (V)

0,9

0,8

0,7

0,6

0,5

0,4

0,3

0,2

0,1

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

21/37

Page 22

Electrical specifications VNQ5E160AK-E

Figure 23. On state resistance vs. T

Ron (Ohm)

300

Iout= 1A

250

200

150

100

Vcc= 13V

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

case

Figure 24. On state resistance vs. V

Ron (Ohm)

300

250

200

150

100

0 5 10 15 20 25 30 35

Vcc (V)

Figure 25. Undervoltage shutdown Figure 26. Turn-on voltage slope

Vusd (V)

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

(dVout/dt )On (V/ms)

1000

900

800

700

600

500

400

300

200

100

-50 -25 0 25 50 75 100 125 150 175

Vcc= 13 V

RI= 13 Ohm

Tc (°C)

Tc=150°C

Tc=125°C

Tc=25°C

Tc=-40°C

Figure 27. I

Ilimh (A)

-50 -25 0 25 50 75 100 125 150

LIMH

Vcc= 13 V

vs. T

case

Tc (°C)

22/37

Figure 28. Turn-off voltage slope

(dVout/dt )Off (V/ms)

1200

1100

1000

900

800

700

600

500

-50 -25 0 25 50 75 100 125 150 175

Vcc= 13 V

RI= 13 Ohm

Tc (°C)

Page 23

VNQ5E160AK-E Electrical specifications

Figure 29. CS_DIS high level voltage Figure 30. CS_DIS clamp voltage

Vcsdh (V)

3,5

2,5

1,5

0,5

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

Figure 31. CS_DIS low level voltage

Vcsdl (V)

2,5

1,5

Vcsdcl(V)

Iin = 1 mA

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

0,5

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

23/37

Page 24

Application information VNQ5E160AK-E

3 Application information

Figure 32. Application schematic

+5V

prot

SENSE

EXT

CS_DIS

INPUT

CURRENT SENSE

OUTPUT

GND

Note: Channel 2, 3, 4 have the same internal circuit as channel 1.

3.1 GND protection network against reverse battery

This section provides two solutions for implementing a ground protection network against reverse battery.

3.1.1 Solution 1 : resistor in the ground line (R

This can be used with any type of load.

The following is an indication on how to dimension the R

1. R

2. R

where -I maximum rating section of the device datasheet.

Power dissipation in R

Equation 1

≤ 600mV / (I

GND

≥ (−VCC) / (-I

GND

is the DC reverse ground pin current and can be found in the absolute

GND

S(on)max

GND

)

(when VCC<0: during reverse battery situations) is:

= (-VCC)2/R

GND

only)

GND

resistor.

24/37

Page 25

VNQ5E160AK-E Application information

This resistor can be shared amongst several different HSDs. Please note that the value of this resistor should be calculated with formula (1) where I

S(on)max

becomes the sum of the

maximum on-state currents of the different devices.

Please note that if the microprocessor ground is not shared by the device ground then the R

will produce a shift (I

GND

S(on)max

* R

) in the input thresholds and the status output

GND

values. This shift will vary depending on how many devices are on in the case of several high side drivers sharing the same R

GND

If the calculated power dissipation leads to a large resistor or several devices have to share the same resistor then ST suggests to utilize Section 3.1.2: Solution 2 : diode (DGND) in

the ground line.

3.1.2 Solution 2 : diode (D

A resistor (R

=1kΩ) should be inserted in parallel to D

GND

) in the ground line

GND

inductive load.

This small signal diode can be safely shared amongst several different HSDs. Also in this case, the presence of the ground network will produce a shift (≈600mV) in the input threshold and in the status output values if the microprocessor ground is not common to the device ground. This shift will not vary if more than one HSD shares the same diode/resistor network.

3.2 Load dump protection

Dld is necessary (voltage transient suppressor) if the load dump peak voltage exceeds the V

max DC rating. The same applies if the device is subject to transients on the VCC line

that are greater than the ones shown in the ISO 7637-2: 2004(E) table.

3.3 MCU I/Os protection

If a ground protection network is used and negative transient are present on the VCC line, the control pins will be pulled negative. ST suggests to insert a resistor (R prevent the µC I/Os pins to latch-up.

The value of these resistors is a compromise between the leakage current of µC and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of µC I/Os:

if the device drives an

GND

prot

) in line to

Equation 2

-V

Calculation example:

For V

5kΩ ≤ R

= - 100V and I

CCpeak

≤ 180kΩ

prot

Recommended values: R

CCpeak/Ilatchup

≥ 20mA; V

latchup

=10kΩ, C

prot

≤ R

EXT

25/37

≤ (V

prot

OHµC

=10nF.

OHμC-VIH-VGND

≥ 4.5V

) / I

IHmax

Page 26

Application information VNQ5E160AK-E

3.4 Current sense and diagnostic

The current sense pin performs a double function (see Figure 33: Current sense and

diagnostic):

● Current mirror of the load current in normal operation, delivering a current

proportional to the load one according to a know ratio K The current I external resistor R minimum (see parameter V

can be easily converted to a voltage V

SENSE

. Linearity between I

SENSE

in Table 9: Current sense (8V<VCC<18V)). The

OUT

and V

current sense accuracy depends on the output current (refer to current sense electrical characteristics Table 9: Current sense (8V<V

● Diagnostic flag in fault conditions, delivering a fixed voltage V

maximum current I

SENSEH

in case of the following fault conditions (refer to Tr u t h ta bl e ):

<18V)).

– Power limitation activation

– Over-temperature

–Short to V

in off state

– Open load in off state with additional external components.

A logic level high on CS_DIS pin sets at the same time all the current sense pins of the device in a high impedance state, thus disabling the current monitoring and diagnostic detection. This feature allows multiplexing of the microcontroller analog inputs by sharing of sense resistance and ADC line among different devices.

SENSE

by means of an

SENSE

is ensured up to 5V

SENSEH

up to a

Figure 33. Current sense and diagnostic

41V

Overtemperature

Pwr_Lim

SENSEH

CS_DIS

To uC ADC

OUT/KX

PROT

SENSE

SENSEH

CURRENT

SENSEn

SENSE

OL OFF

INPUTn

Main MOSn

GND

PU_CMD

Loff2r

Loff2f

Load

BAT

OUTn

26/37

Page 27

VNQ5E160AK-E Application information

⋅⋅−

⋅

3.4.1 Short to VCC and off state open load detection

Short to V

A short circuit between V V

SENSEH

during the on state depending on the nature of the short circuit.

Off state open load with external circuitry

and output is indicated by the relevant current sense pin set to

during the device off state. Small or no current is delivered by the current sense

Detection of an open load in off mode requires an external pull-up resistor R the output to a positive supply voltage V

It is preferable V

to be switched off during the module stand-by mode in order to avoid the

connecting

overall stand-by current consumption to increase in normal conditions, i.e. when load is connected.

An external pull down resistor R

connected between output and GND is mandatory to

avoid misdetection in case of floating outputs in off state (see Figure 33: Current sense and

diagnostic).

must be selected in order to ensure V

OUT < VOLmin

unless pulled up by the external

circuitry:

Equation 3

OLfoffLPD

min)2(

≤ 22 KΩ is recommended.

OUT

−

OFFupPull

VVIRV

=<⋅=

For proper open load detection in off state, the external pull-up resistor must be selected according to the following formula:

Equation 4

OUT

For the values of V

(8V<V

<18V).

ONupPull

−

OLmin ,VOLmax, IL(off2)r

IRRVR

roffLPDPUPUPD

)2(

PDPU

and I

27/37

see Table 10: Openload detection

L(off2)f

max

Page 28

Application information VNQ5E160AK-E

3.5 Maximum demagnetization energy (VCC=13.5V)

Figure 34. Maximum turn-off current versus inductance (for each channel)

100

I (A)

0,1

0,1 1 10 100L (mH)

= 150°C single pulse

jstart

B: T

VIN, I

= 100°C repetitive pulse

jstart

= 125°C repetitive pulse

jstart

Demagnetization Demagnetization Demagnetization

Note: Values are generated with R

In case of repetitive pulses, T must not exceed the temperature specified above for curves A and B.

=0 Ω.

(at beginning of each demagnetization) of every pulse

jstart

28/37

Page 29

VNQ5E160AK-E Package and PC board thermal data

4 Package and PC board thermal data

4.1 PowerSSO-24 thermal data

Figure 35. PowerSSO-24 PC board

Note: Layout condition of R

area= 77 mm x 86 mm, PCB thickness=1.6 mm, Cu thickness=70 mm (front and back side), Copper areas: from minimum pad lay-out to 8 cm

Figure 36.

RTHj_amb(°C/W)

thj-amb

and Zth measurements (PCB: Double layer, Thermal Vias, FR4

vs. PCB copper area in open box free air condition (one channel ON)

0246810

PCB Cu heatsink area (cm^2)

29/37

Page 30

Package and PC board thermal data VNQ5E160AK-E

Figure 37. PowerSSO-24 thermal impedance junction ambient single pulse (one

channel ON)

ZTH (°C/W)

1000

100

0.1

0.0001 0.001 0.01 0.1 1 10 100 1000

Time (s)

Figure 38. Thermal fitting model of a double channel hsd in PowerSSO-24

Footprint

(a)

2 cm

8 cm

30/37

Page 31

VNQ5E160AK-E Package and PC board thermal data

Equation 5: pulse calculation formula:

THδ

where δ = tP/T

Table 15. Thermal parameters

Area/island (cm2)Footprint28

R1 = R7 = R9 = R11 (°C/W) 1.2

R2 = R8 = R10 = R12 (°C/W) 6

R3 (°C/W) 6

R4 (°C/W) 7.7

R5 (°C/W) 9 9 8

R6 (°C/W) 28 17 10

C1 = C7 = C9 = C11 (W.s/°C) 0.0008

C2 = C8 = C10 = C12 (W.s/°C) 0.0016

C3 (W.s/°C) 0.025

RTHδ Z

THtp

1 δ–()+⋅=

C4 (W.s/°C) 0.75

C5 (W.s/°C) 1 4 9

C6 (W.s/°C) 2.2 5 17

a. The fitting model is a semplified thermal tool and is valid for transient evolutions where the embedded

protections (power limitation or thermal cycling during thermal shutdown) are not triggered.

31/37

Page 32

Package and packing information VNQ5E160AK-E

5 Package and packing information

5.1 ECOPACK

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com ECOPACK® is an ST trademark.

5.2 PowerSSO-24 mechanical data

Figure 39. PowerSSO-24 package dimensions

32/37

Page 33

VNQ5E160AK-E Package and packing information

Table 16. PowerSSO-24 mechanical data

Symbol

Min. Typ. Max.

A 2.45

A2 2.15 2.35

a1 0 0.1

b0.33 0.51

c0.23 0.32

(3)

10.10 10.50

7.40 7.60

e0.8

e3 8.8

F2.3

G 0.1

H 10.1 10.5

(1) (2)

Millimeters

h 0.4

k0° 8°

L0.6 1

O1.2

Q0.8

S2.9

T3.65

U1.0

N 10°

X4.1 4.7

Y6.5 7.1

1. No intrusion allowed inwards the leads.

2. Flash or bleeds on exposed die pad shall not exceed 0.5 mm per side

3. “D and E” do not include mold flash or protusions. Mold flash or protusions shall not exceed 0.15 mm per side

33/37

Page 34

Package and packing information VNQ5E160AK-E

5.3 Packing information

Figure 40. PowerSSO-24 tube shipment (no suffix)

Base q.ty 49 Bulk q.ty 1225

Figure 41. PowerSSO-24 tape and reel shipment (suffix “TR”)

Tube length (± 0.5) 532 A 3.5 B 13.8 C (± 0.1) 0.6

All dimensions are in mm.

Reel dimensions

Base q.ty 1000 Bulk q.ty 1000 A (max) 330 B (min) 1.5 C (± 0.2) 13 F 20.2 G (+ 2 / -0) 24.4 N (min) 100 T (max) 30.4

Tape dimensions

According to Electronic Industries Association (EIA) standard 481 rev. A, Feb 1986

Tape width W 24 Tape hole spacing P0 (± 0.1) 4 Component spacing P 12 Hole diameter D (± 0.05) 1.55 Hole diameter D1 (min) 1.5 Hole position F (± 0.1) 11.5 Compartment depth K (max) 2.85 Hole spacing P1 (± 0.1) 2

All dimensions are in mm.

Top

cover

tape

End

500mm min

No componentsNo components Components

Empty components pockets saled with cover tape.

User direction of feed

Start

500mm min

34/37

Page 35

VNQ5E160AK-E Order codes

6 Order codes

Table 17. Device summary

Order codes

Package

Tube Tape and reel

PowerSSO-24 VNQ5E160AK-E VNQ5E160AKTR-E

35/37

Page 36

Revision history VNQ5E160AK-E

7 Revision history

Table 18. Document revision history

Date Revision Changes

05-Jun-2007 1 Initial release.

Document restructured.

Table 9: Current sense (8V<VCC<18V):

parameters values

L(off2)r

, I

and td_vol parameters

L(off2)f

<18V):

DSENSE2H

17-Mar-2009 2

Updated – added k0, k1, k2, k3, dk1/k1, dk2/k2, dk3/k3, Δt

Updated Table 10: Openload detection (8V<V – added I Added Figure 9.: Iout/ Isense vs. Iout. Added Figure 10.: Maximum current sense ratio drift vs load current Added Section 2.4: Waveforms. Added Section 2.5: Electrical characteristics curves. Updated Chapter 3: Application information: – added Section 3.4: Current sense and diagnostic Added Chapter 4: Package and PC board thermal data: Updated Table 16: PowerSSO-24 mechanical data

36/37

Page 37

VNQ5E160AK-E

Please Read Carefully:

Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice.

All ST products are sold pursuant to ST’s terms and conditions of sale.

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