Quad channel high-side driver with analog current sense
for automotive applications
Max supply voltageV
Operating voltage rangeV
Max on-state resistance (per ch.) R
Current limitation (typ)I
Off-state supply currentI
1. Typical value with all loads connected.
■ General
– Inrush current active management by
power limitation
– Very low standby current
– 3.0 V CMOS compatible inputs
– Optimized electromagnetic emissions
– Very low electromagnetic susceptibility
– Compliance with European directive
2002/95/EC
– Very low current sense leakage
■ Diagnostic functions
– Proportional load current sense
– High current sense precision for wide
currents range
– Current sense disable
– Off-state open-load detection
– Output short to V
– Overload and short to ground (power
– Undervoltage shutdown
– Overvoltage clamp
– Load current limitation
– Self limiting of fast thermal transients
– Protection against loss of ground and loss
■ All types of resistive, inductive and capacitive
loads
■ Suitable as LED driver
Description
The VNQ5E050AK-E is a quad channel high-side
driver manufactured using ST proprietary
VIPower™ M0-5 technology and housed in
PowerSSO-24 package. The device is designed
to drive 12 V automotive grounded loads, and to
provide protection and diagnostics. It also
implements a 3 V and 5 V CMOS compatible
interface for the use with any microcontroller.
The device integrates advanced protective
functions such as load current limitation, inrush
and overload active management by power
limitation, overtemperature shut-off with
auto-restart and overvoltage active clamp.
A dedicated analog current sense pin is
associated with every output channel providing
enhanced diagnostic functions including fast
detection of overload and short-circuit to ground
through power limitation indication,
overtemperature indication, short-circuit to V
diagnosis and on-state and off-state open-load
detection. The current sensing and diagnostic
feedback of the whole device can be disabled by
pulling the CS_DIS pin high to share external
sense resistor with similar devices.
Stressing the device above the ratings listed in the “Absolute maximum ratings” tables may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to the conditions reported in this section for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality documents.
Table 3.Absolute maximum ratings
SymbolParameterValueUnit
V
CC
-V
-I
GND
I
OUT
-I
OUT
I
IN
I
CSD
-I
CSENSE
V
CSENSE
DC supply voltage 41V
Reverse DC supply voltage0.3V
CC
DC reverse ground pin current200mA
DC output currentInternally limitedA
Reverse DC output current 20A
DC input current-1 to 10mA
DC current sense disable input current-1 to 10mA
DC reverse CS pin current200mA
Current sense maximum voltage
V
- 41 to
CC
+V
CC
V
Doc ID 13519 Rev 67/37
Page 8
Electrical specificationsVNQ5E050AK-E
Table 3.Absolute maximum ratings (continued)
SymbolParameterValueUnit
Maximum switching energy (single pulse)
E
MAX
(L = 3 mH; R
I
OUT=IlimL
=0Ω; V
L
(Typ.))
=13.5V; T
bat
jstart
=150°C;
104mJ
Electrostatic discharge
(human body model: R = 1.5 KΩ; C=100pF)
4000
2000
4000
5000
5000
V
V
V
V
V
V
V
ESD
ESD
T
T
stg
– Input
– Current sense
–CS_DIS
– Output
–V
CC
Charge device model (CDM-AEC-Q100-011)750V
Junction operating temperature-40 to 150°C
j
Storage temperature-55 to 150 °C
2.2 Thermal data
Table 4.Thermal data
SymbolParameterMax. valueUnit
R
thj-case
R
thj-amb
Thermal resistance junction-case (with one channel ON)2.8°C/W
Values specified in this section are for 8 V < VCC<28V, -40°C< Tj< 150 °C, unless
otherwise stated.
Table 5.Power section
SymbolParameterTest conditionsMin. Typ. Max. Unit
V
V
V
USDhyst
R
V
Operating supply voltage4.51328V
CC
Undervoltage shutdown2.53.54.5V
USD
Undervoltage shutdown
hysteresis
On-state resistance
ON
Clamp voltageIS=20mA414652V
clamp
(1)
I
=2A; Tj=25°C50
OUT
=2A; Tj= 150 °C100
OUT
=2A; VCC=5V; Tj=25°C65
I
OUT
0.5V
mΩI
8/37 Doc ID 13519 Rev 6
Page 9
VNQ5E050AK-EElectrical specifications
Table 5.Power section (continued)
SymbolParameterTest conditionsMin. Typ. Max. Unit
Off-state; V
V
I
S
Supply current
IN=VOUT=VSENSE=VCSD
On-state; VCC=13V; VIN=5V;
I
=0A
OUT
VIN=V
Tj=25°C
I
L(off)
1. For each channel
2. PowerMOS leakage included.
Table 6.Switching (VCC=13V; Tj=25°C)
Off-state output current
Output - VCC diode
V
F
voltage
(1)
(1)
V
IN=VOUT
= 125 °C
T
j
-I
=2A; Tj= 150 °C0.7V
OUT
=13V; Tj=25°C;
CC
=0V; VCC=13V;
OUT
=0V; VCC=13V;
=0V
(2)5(2)
2
814mA
00.01 3
05
SymbolParameterTest conditionsMin.Typ.Max.Unit
(dV
(dV
t
d(on)
t
d(off)
OUT
OUT
Turn-on delay time RL=6.5Ω (see Figure 6.)20 µs
Turn-off delay time RL=6.5Ω (see Figure 6.)35 µs
/dt)onTurn-on voltage slope RL=6.5Ω
/dt)
Turn-off voltage slope RL=6.5Ω
off
See
Figure 26
See
Figure 28
µA
µA
V/µs
V/µs
W
W
ON
OFF
Switching energy
losses during t
won
Switching energy
losses during
t
woff
RL=6.5Ω (see Figure 6.)0.15 mJ
RL=6.5Ω (see Figure 6.)0.25 mJ
Table 7.Logic inputs
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
I
V
I
V
I(hyst)
V
V
I
CSDL
V
CSDH
CSDL
Input low level voltage0.9V
IL
Low level input currentVIN=0.9V1µA
IL
Input high level voltage2.1V
IH
High level input currentVIN=2.1V10µA
IH
Input hysteresis voltage0.25V
I
=1mA5.57
Input clamp voltage
ICL
IN
=-1mA-0.7
I
IN
CS_DIS low level voltage0.9V
Low level CS_DIS currentV
=0.9V1µA
CSD
CS_DIS high level voltage2.1V
V
Doc ID 13519 Rev 69/37
Page 10
Electrical specificationsVNQ5E050AK-E
Table 7.Logic inputs (continued)
SymbolParameterTest conditionsMin.Typ.Max.Unit
I
CSDH
V
CSD(hyst)
V
CSCL
Table 8.Protections and diagnostics
High level CS_DIS currentV
=2.1V10µA
CSD
CS_DIS hysteresis voltage0.25V
I
=1mA5.57
CS_DIS clamp voltage
CSD
=-1mA-0.7
I
CSD
(1)
SymbolParameterTest conditionsMin.Typ.Max.Unit
I
limH
I
limL
T
TSD
T
T
T
HYST
V
DEMAG
DC short circuit
current
Short circuit current
during thermal cycling
Shutdown
temperature
Reset temperatureTRS + 1TRS + 5°C
R
Thermal reset of
RS
STATUS
Thermal hysteresis
TSD-TR
)
(T
Turn-off output voltage
clamp
VCC= 13 V192738A
5V<V
V
CC
<28V38A
CC
=13V; TR<Tj<T
TSD
7A
150175200°C
135°C
7°C
I
=2A; VIN=0;
OUT
L=6mH
-41VCC-46VCC-52V
V
CC
V
=0.1A;
I
V
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
Table 9.Current sense (8 V < VCC<18V)
Output voltage drop
ON
limitation
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
OUT
Tj= -40 °C...150 °C
(see Figure 8)
25mV
SymbolParameterTest conditionsMin. Typ. Max. Unit
I
=0.05A;
OUT
K
K
dK
1/K1
I
0
OUT/ISENSE
I
1
OUT/ISENSE
Current sense ratio
(1)
drift
V
T
I
V
T
= 0.5 V; V
SENSE
= -40 °C...150 °C
j
=1A;
OUT
=4V; V
SENSE
= -40 °C...150 °C
j
CSD
Tj= 25 °C...150 °C
=1A; V
I
OUT
V
CSD
= -40 °C to 150 °C
T
j
SENSE
=0V;
CSD
=0V;
=4V;
=0V;
1050 2110 3170
1510
1890
2650
1510
1890
2270
-1313%
10/37 Doc ID 13519 Rev 6
Page 11
VNQ5E050AK-EElectrical specifications
Table 9.Current sense (8 V < VCC< 18 V) (continued)
SymbolParameterTest conditionsMin. Typ. Max. Unit
I
=2A;
OUT
K
2
I
OUT/ISENSE
V
T
=4V; V
SENSE
= -40 °C...150 °C
j
Tj= 25 °C...150 °C
CSD
=0V;
1600
1600
1800
1800
2230
2000
dK
2/K2
K
dK
3/K3
I
SENSE0
I
OL
Current sense ratio
(1)
drift
I
3
OUT/ISENSE
Current sense ratio
(1)
drift
Analog sense
leakage current
Open-load on-state
current detection
threshold
=2A; V
I
OUT
V
CSD
= -40 °C to 150 °C
T
j
I
=4A;
OUT
V
SENSE
= -40 °C...150 °C
T
j
=0V;
=4V; V
SENSE
CSD
Tj= 25 °C...150 °C
=4A; V
I
OUT
V
CSD
= -40 °C to 150 °C
T
j
=0A; V
I
OUT
V
CSD
= -40 °C...150 °C
T
j
=0A; V
I
OUT
V
CSD
= -40 °C...150 °C
T
j
I
=2A; V
OUT
V
CSD
= -40 °C...150 °C
T
j
=5V; 8V<VCC<18V;
V
IN
I
SENSE
SENSE
=0V;
SENSE
=5V; VIN=0V;
SENSE
=0V; VIN=5V;
SENSE
=5V; VIN=5V;
=5µA
=4V;
=0V;
=4V;
=0V;
=0V;
=0V;
-88%
1620
1770
1990
1620
1770
1920
-66%
01
02
µA
01
420mA
V
SENSE
Max analog sense
output voltage
I
OUT
=4A; V
=0V 5V
CSD
Analog sense output
V
SENSEH
voltage in fault
condition
(2)
VCC=13V; R
=10KΩ8V
SENSE
Analog sense output
I
SENSEH
current in fault
condition
(2)
Delay response time
t
DSENSE1H
from falling edge of
CS_DIS pin
Delay response time
t
DSENSE1L
from rising edge of
CS_DIS pin
Delay response time
t
DSENSE2H
from rising edge of
INPUT pin
VCC=13V; V
V
I
<4V, 0.5A<I
SENSE
=90% of I
SENSE
(see Figure 4)
V
I
SENSE
SENSE
<4V; 0.5A<I
=10% of I
(see Figure 4)
V
I
< 4 V, 0.5 A < I
SENSE
=90% of I
SENSE
(see Figure 4)
=5V9mA
SENSE
<4A
OUT
SENSEMAX
OUT
SENSEMAX
OUT
SENSEMAX
<4A
<4A
40100µs
520µs
80250µs
Doc ID 13519 Rev 611/37
Page 12
Electrical specificationsVNQ5E050AK-E
Table 9.Current sense (8 V < VCC< 18 V) (continued)
SymbolParameterTest conditionsMin. Typ. Max. Unit
Δ
t
DSENSE2H
t
DSENSE2L
Delay response time
between rising edge
of output current and
rising edge of current
sense
Delay response time
from falling edge of
INPUT pin
V
I
SENSE
I
OUT
I
OUTMAX
V
I
(see Figure 4)
<4V,
SENSE
=90% of I
=90% of I
< 4 V, 0.5 A < I
SENSE
=10% of I
SENSE
SENSEMAX,
OUTMAX
=2A (see Figure 7)
OUT
SENSEMAX
60µs
<4A
80250µs
1. Parameter guaranteed by design; it is not tested.
2. Fault condition includes: power limitation, overtemperature and open-load off-state detection.
Table 10.Open-load detection (8V<VCC<18V)
SymbolParameterTest conditionsMin.Typ.Max. Unit
V
OL
t
DSTKON
I
L(off2)r
I
L(off2)f
td_vol
Open-load off-state voltage
detection threshold
Output short circuit to Vcc
detection delay at turn-off
Off-state output current at
V
=4V
OUT
Off-state output current at
=2V
V
OUT
Delay response from output
rising edge to V
SENSE
rising
edge in open-load
V
=0V2
IN
See Figure 51801200µs
VIN=0V; V
V
rising from 0 V to 4 V
OUT
V
=0V;
IN
V
SENSE=VSENSEH
V
falling from VCC to 2 V
OUT
V
=4V; VIN=0V
OUT
SENSE
=90% of V
V
SENSE
=0V;
SENSEH
-1200µA
-5090µA
See
Figure 5
4V
20µs
Figure 4.Current sense delay characteristics
INPUT
CS_DIS
LOAD CURRENT
SENSE CURRENT
t
DSENSE2H
12/37 Doc ID 13519 Rev 6
t
DSENSE1L
t
DSENSE1H
t
DSENSE2L
Page 13
VNQ5E050AK-EElectrical specifications
Figure 5.Open-load off-state delay timing
OUTPUT STUCK TO V
V
IN
V
CS
Figure 6.Switching characteristics
V
OUT
t
Won
80%
dV
/dt
OUT
(on)
t
r
10%
CC
V
t
DSTKON
t
Woff
90%
t
f
> V
OUT
V
SENSEH
dV
OL
OUT
/dt
(off)
t
INPUT
t
d(on)
t
d(off)
t
Doc ID 13519 Rev 613/37
Page 14
Electrical specificationsVNQ5E050AK-E
Figure 7.Delay response time between rising edge of output current and rising
edge of current sense (CS enabled)
V
IN
Δ
t
DSENSE2H
t
I
OUT
90% I
OUTMAX
I
OUTMAX
t
I
SENSE
90% I
I
SENSEMAX
SENSEMAX
t
Figure 8.Output voltage drop limitation
VCC-V
OUT
Tj=150°C
V
ON
V
ON/RON
(T)
=25°C
T
j
T
=-40°C
j
I
OUT
14/37 Doc ID 13519 Rev 6
Page 15
VNQ5E050AK-EElectrical specifications
Figure 9.I
I
/ I
out
sense
2800
2600
2400
max T
2200
2000
1800
1600
1400
1200
min T
11,522,533,54
OUT/ISENSE
vs I
max Tj = -40 °C to 150 °C
= 25 °C to 150 °C
j
= 25 °C to 150 °C =
j
OUT
min T
= -40 °C to 150 °C
j
I
OUT
typical value
(A)
Figure 10. Maximum current sense ratio drift vs load current
dk/k(%)
20
15
10
5
0
-5
-10
-15
-20
1234
Note:Parameter guaranteed by design; it is not tested.
I
OUT
(A)
Doc ID 13519 Rev 615/37
Page 16
Electrical specificationsVNQ5E050AK-E
Table 11.Truth table
ConditionsInputOutputSense (V
Normal operation
L
H
L
H
CSD
0
Nominal
=0V)
(1)
Overtemperature
Undervoltage
Overload
Short circuit to GND
(power limitation)
Open-load off-state
(with external pull-up)
Short circuit to V
CC
(external pull-up
disconnected)
Negative output voltage
clamp
1. If the V
and external circuit.
is high, the SENSE output is at a high impedance, its potential depends on leakage currents
CAll functions of the device performed as designed after exposure to disturbance.
E
One or more functions of the device did not perform as designed after exposure to
disturbance and cannot be returned to proper operation without replacing the device.
Doc ID 13519 Rev 617/37
Page 18
Electrical specificationsVNQ5E050AK-E
2.4 Waveforms
Figure 11. Normal operation
Normal operation
INPUT
Nominal loadNominal load
I
OUT
V
SENSE
V
CS_DIS
Figure 12. Overload or short to GND
Overload or Short to GND
INPUT
I
OUT
V
SENSE
I
LimH
>
Power Limitation
I
LimL
Thermal cycling
>
V
CS_DIS
18/37 Doc ID 13519 Rev 6
Page 19
VNQ5E050AK-EElectrical specifications
Figure 13. Intermittent overload
Intermittent Overload
INPUT
Overload
I
>
LimH
I
>
LimL
I
OUT
V
V
SENSE
V
CS_DIS
SENSEH
>
Figure 14. Off-state open-load with external circuitry
OFF-State Open Load
with external circutry
Nominal load
INPUT
V
> V
OUT
V
t
DSTK(on)
OL
V
SENSEH
>
V
OUT
I
OUT
V
SENSE
V
CS_DIS
OL
Doc ID 13519 Rev 619/37
Page 20
Electrical specificationsVNQ5E050AK-E
Figure 15. Short to V
V
OUT
I
OUT
V
CS_DIS
CC
Resistive
Short to V
V
OL
t
DSTK(on)
CC
Short to V
CC
Hard
Short to V
V
> V
OUT
t
DSTK(on)
CC
OL
Figure 16. Tj evolution in overload or short to GND
TJ evolution in
Overload or Short to GND
INPUT
Self-limitation of fast thermal transients
T
J_START
T
J
I
>
LimH
I
OUT
Power Limitation
T
TSD
T
R
< I
T
HYST
LimL
20/37 Doc ID 13519 Rev 6
Page 21
VNQ5E050AK-EElectrical specifications
)
)
)
)
)
)
2.5 Electrical characteristics curves
Figure 17. Off-state output currentFigure 18. High level input current
Figure 21. Input high levelFigure 22. Input hysteresis voltage
Vih (V)
4
3,5
3
2,5
2
1,5
1
0,5
0
-50-250255075100 125 150 175
Tc (°C
Vihyst (V)
1
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0
-50-250255075100 125 150 175
Tc (°C
Doc ID 13519 Rev 621/37
Page 22
Electrical specificationsVNQ5E050AK-E
Figure 23. On-state resistance vs T
Ron (mOhm)
150
Iout= 2A
120
90
60
30
0
Vcc=13V
-50-250255075100 125 150 175
Tc (°C)
case
Figure 24. On-state resistance vs V
Ron (mOhm)
100
80
60
40
20
0
0510152025303540
Vcc (V)
Tc=150°C
Tc=125°C
Tc=25°C
Tc=-40°C
Figure 25. Undervoltage shutdownFigure 26. Turn-on voltage slope
Vusd (V)
16
14
12
10
8
6
4
2
0
-50-250255075100 125 150 175
Tc (°C)
(dVout/dt )On (V/ms)
1000
900
800
700
600
500
400
300
200
100
0
-50 -250255075100 125 150 175
Vcc=13V
RI=6.5 Ohm
Tc (°C)
CC
Figure 27. I
LIMH
vs T
case
Ilimh (A)
40
35
30
25
20
15
10
Vcc=13V
-50-250255075100 125 150 175
Tc (°C)
22/37 Doc ID 13519 Rev 6
Figure 28. Turn-off voltage slope
(dVout/dt )Off (V/ms)
600
550
500
450
400
350
300
250
200
150
100
50
0
-50-250255075100 125 150 175
Vcc=13V
RI= 6.5 Ohm
Tc (°C)
Page 23
VNQ5E050AK-EElectrical specifications
Figure 29. CS_DIS high level voltageFigure 30. CS_DIS clamp voltage
Vcsdh (V)
4
3,5
3
2,5
2
1,5
1
0,5
0
-50-250255075100 125 150 175
Tc (°C)
Figure 31. CS_DIS low level voltage
Vcsdl (V)
3
2,5
2
Vcsdcl(V)
10
9
8
Iin = 1 mA
7
6
5
4
3
2
1
0
-50-250255075100 125 150 175
Tc (°C)
1,5
1
0,5
0
-50-250255075100 125 150 175
Tc (°C)
Doc ID 13519 Rev 623/37
Page 24
Application informationVNQ5E050AK-E
3 Application information
Figure 32. Application schematic
+5V
V
CC
R
prot
Μ
CU
R
prot
CS_DIS
IINPUT
OUTPUT
D
ld
R
prot
C
ext
CURRENT SENSE
R
SENSE
GND
R
GND
GND
D
GND
V
Note:Channel 2, 3, 4 have the same internal circuit as channel 1.
3.1 GND protection network against reverse battery
This section provides two solutions for implementing a ground protection network against
reverse battery.
3.1.1 Solution 1: resistor in the ground line (R
This can be used with any type of load.
The following is an indication on how to dimension the R
1.R
2. R
where -I
maximum rating section of the device datasheet.
≤ 600 mV / (I
GND
≥ (−VCC) / (-I
GND
is the DC reverse ground pin current and can be found in the absolute
GND
S(on)max
GND
).
)
GND
only)
resistor.
GND
Power Dissipation in R
(when VCC< 0: during reverse battery situations) is:
GND
Equation 1
= (-VCC)2/R
24/37 Doc ID 13519 Rev 6
P
D
GND
Page 25
VNQ5E050AK-EApplication information
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I
S(on)max
becomes the sum of the
maximum on-state currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground then the
R
will produce a shift (I
GND
S(on)max
* R
) in the input thresholds and the status output
GND
values. This shift will vary depending on how many devices are on in the case of several
high side drivers sharing the same R
GND
.
If the calculated power dissipation leads to a large resistor or several devices have to share
the same resistor then ST suggests to utilize Section 3.1.2: Solution 2: diode (DGND) in the
ground line.
3.1.2 Solution 2: diode (D
A resistor (R
=1kΩ) should be inserted in parallel to D
GND
) in the ground line
GND
inductive load.
This small signal diode can be safely shared amongst several different HSDs. Also in this
case, the presence of the ground network will produce a shift (≈600mV) in the input
threshold and in the status output values if the microprocessor ground is not common to the
device ground. This shift will not vary if more than one HSD shares the same diode/resistor
network.
3.2 Load dump protection
Dld is necessary (voltage transient suppressor) if the load dump peak voltage exceeds the
V
max DC rating. The same applies if the device is subject to transients on the VCC line
CC
that are greater than the ones shown in the ISO 7637-2: 2004(E) table.
3.3 MCU I/Os protection
If a ground protection network is used and negative transients are present on the VCC line,
the control pins will be pulled negative. ST suggests to insert a resistor (R
prevent the microcontroller I/O pins to latch-up.
The value of these resistors is a compromise between the leakage current of microcontroller
and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of
microcontroller I/Os.
if the device drives an
GND
prot
) in line to
Equation 2
-V
CCpeak/Ilatchup
≤ R
prot
≤ (V
OHμC-VIH-VGND
) / I
IHmax
Calculation example:
For V
CCpeak
5kΩ ≤ R
= -100 V and I
≤ 180 kΩ.
prot
Recommended values: R
latchup
=10kΩ, C
prot
≥ 20 mA; V
EXT
≥ 4.5 V
OHμC
=10nF.
Doc ID 13519 Rev 625/37
Page 26
Application informationVNQ5E050AK-E
3.4 Current sense and diagnostic
The current sense pin performs a double function (see Figure 33: Current sense and
diagnostic):
●Current mirror of the load current in normal operation, delivering a current
proportional to the load one according to a known ratio K
The current I
external resistor R
minimum (see parameter V
can be easily converted to a voltage V
SENSE
. Linearity between I
SENSE
SENSE
in Table 9: Current sense (8 V < VCC<18V)). The
OUT
and V
current sense accuracy depends on the output current (refer to current sense electrical
characteristics Table 9: Current sense (8 V < V
●Diagnostic flag in fault conditions, delivering a fixed voltage V
maximum current I
SENSEH
in case of the following fault conditions (refer to Tr u th t a b l e):
<18V)).
CC
–Power limitation activation
–Overtemperature
–Short to V
in off-state
CC
–Open-load in off-state with additional external components.
A logic level high on CS_DIS pin sets at the same time all the current sense pins of the
device in a high impedance state, thus disabling the current monitoring and diagnostic
detection. This feature allows multiplexing of the microcontroller analog inputs by sharing of
sense resistance and ADC line among different devices.
.
X
SENSE
by means of an
SENSE
is ensured up to 5V
SENSEH
up to a
Figure 33. Current sense and diagnostic
V
PU_CMD
R
I
Loff2r
I
Loff2f
R
PU
PU
Load
PD
V
BAT
V
CC
Main MOSn
I
OUT/KX
41V
Overtemperature
+
OL OFF
Pwr_Lim
CS_DIS
I
SENSEH
V
SENSEH
CURRENT
SENSEn
R
PROT
To uC ADC
R
SENSE
V
SENSE
INPUTn
-
V
OL
OUTn
GND
26/37 Doc ID 13519 Rev 6
Page 27
VNQ5E050AK-EApplication information
3.4.1 Short to VCC and off-state open-load detection
Short to V
A short circuit between V
V
SENSEH
CC
and output is indicated by the relevant current sense pin set to
CC
during the device off-state. Small or no current is delivered by the current sense
during the on-state depending on the nature of the short circuit.
Off-state open-load with external circuitry
Detection of an open-load in off mode requires an external pull-up resistor R
the output to a positive supply voltage V
It is preferable V
to be switched off during the module standby mode in order to avoid the
PU
PU
.
connecting
PU
overall standby current consumption to increase in normal conditions, i.e. when load is
connected.
An external pull down resistor R
connected between output and GND is mandatory to
PD
avoid misdetection in case of floating outputs in off-state (see Figure 33: Current sense and
diagnostic).
R
must be selected in order to ensure V
PD
OUT < VOLmin
unless pulled up by the external
circuitry:
Equation 3
VVIRV
2
=<⋅=
OUT
−
OFFupPull
_
OLfoffLPD
min)2(
R
≤ 22 KΩ is recommended.
PD
For proper open-load detection in off-state, the external pull-up resistor must be selected
according to the following formula:
Equation 4
IRRVR
⋅⋅−⋅
V
OUT
−
For the values of V
(8V<V
CC
<18V).
OLmin,VOLmax, IL(off2)r
=
ONupPull
_
and I
RR
+
PDPU
see Table 10: Open-load detection
L(off2)f
roffLPDPUPUPD
)2(
OL
max
VV
4
=>
Doc ID 13519 Rev 627/37
Page 28
Application informationVNQ5E050AK-E
3.5 Maximum demagnetization energy (VCC=13.5V)
Figure 34. Maximum turn-off current versus inductance (for each channel)
100
A
B
C
10
I (A)
1
0,1110100L (mH)
A: T
B: T
C: T
VIN, I
= 150°C single pulse
jstart
= 100°C repetitive pulse
jstart
= 125°C repetitive pulse
jstart
L
Note:Values are generated with R
In case of repetitive pulses, T
must not exceed the temperature specified above for curves A and B.
DemagnetizationDemagnetizationDemagnetization
=0Ω
L
(at beginning of each demagnetization) of every pulse
jstart
t
28/37 Doc ID 13519 Rev 6
Page 29
VNQ5E050AK-EPackage and PC board thermal data
4 Package and PC board thermal data
4.1 PowerSSO-24 thermal data
Figure 35. PowerSSO-24 PC board
Note:Layout condition of R
area = 77 mm x 86 mm, PCB thickness = 1.6 mm, Cu thickness = 70 µm (front and back
side), Copper areas: from minimum pad lay-out to 8 cm
Figure 36.
RTHj_amb(°C/W)
R
thj-amb
55
50
45
40
35
30
0246810
and Zth measurements (PCB: Double layer, Thermal Vias, FR4
th
2
).
vs PCB copper area in open box free air condition (one channel ON)
PCB Cu heatsink area (cm^2)
Doc ID 13519 Rev 629/37
Page 30
Package and PC board thermal dataVNQ5E050AK-E
Figure 37.
PowerSSO-24 thermal impedance junction ambient single pulse (one channel ON)
ZTH (°C/W)
1000
100
10
1
0.1
0.00010.0010.010.11101001000
Time (s)
Footprint
2
2 cm
8 cm
2
Figure 38. Thermal fitting model of a double channel HSD in PowerSSO-24
Note:The fitting model is a simplified thermal tool and is valid for transient evolutions where the
embedded protections (power limitation or thermal cycling during thermal shutdown) are not
triggered.
30/37 Doc ID 13519 Rev 6
Page 31
VNQ5E050AK-EPackage and PC board thermal data
Equation 5: pulse calculation formula
Z
THδ
R
TH
δZ
THtp
1δ–()+⋅=
where δ = tP/T
Table 15.Thermal parameters
Area/island (cm2)Footprint28
R1 = R7 = R9 = R11 (°C/W)0.4
R2 = R8 = R10 = R12 (°C/W)2
R3 (°C/W)6
R4 (°C/W)7.7
R5 (°C/W)998
R6 (°C/W)281710
C1 = C7 = C9 = C11 (W.s/°C)0.001
C2 = C8 = C10 = C12 (W.s/°C)0.0022
C3 (W.s/°C)0.025
C4 (W.s/°C)0.75
C5 (W.s/°C)149
C6 (W.s/°C)2.2517
Doc ID 13519 Rev 631/37
Page 32
Package and packing informationVNQ5E050AK-E
5 Package and packing information
5.1 ECOPACK
®
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com
ECOPACK® is an ST trademark.
5.2 PowerSSO-24 mechanical data
Figure 39. PowerSSO-24 package dimensions
.
32/37 Doc ID 13519 Rev 6
Page 33
VNQ5E050AK-EPackage and packing information
Table 16.PowerSSO-24 mechanical data
Millimeters
Symbol
Min.Typ.Max.
A2.45
A22.152.35
a100.1
b0.330.51
c0.230.32
D10.1010.50
E7.407.60
e0.8
e38.8
F2.3
G0.1
H10.110.5
h0.4
k0°8°
L0.550.85
O1.2
Q0.8
S2.9
T3.65
U1.0
N10°
X4.14.7
Y6.57.1
Doc ID 13519 Rev 633/37
Page 34
Package and packing informationVNQ5E050AK-E
5.3 Packing information
Figure 40. PowerSSO-24 tube shipment (no suffix)
Base q.ty49
Bulk q.ty1225
C
B
A
Figure 41. PowerSSO-24 tape and reel shipment (suffix “TR”)
Tube length (± 0.5)532
A3.5
B13.8
C (± 0.1)0.6
All dimensions are in mm.
Reel dimensions
Base q.ty1000
Bulk q.ty1000
A (max)330
B (min)1.5
C (± 0.2)13
F20.2
G (+ 2 / -0)24.4
N (min)100
T (max)30.4
Tape dimensions
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986
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