Datasheet VNQ5E050AK-E Datasheet (ST)

Page 1
Features
VNQ5E050AK-E
Quad channel high-side driver with analog current sense
for automotive applications
Max supply voltage V
Operating voltage range V
Max on-state resistance (per ch.) R
Current limitation (typ) I
Off-state supply current I
1. Typical value with all loads connected.
■ General
power limitation – Very low standby current – 3.0 V CMOS compatible inputs – Optimized electromagnetic emissions – Very low electromagnetic susceptibility – Compliance with European directive
2002/95/EC – Very low current sense leakage
■ Diagnostic functions
– Proportional load current sense – High current sense precision for wide
currents range – Current sense disable – Off-state open-load detection – Output short to V – Overload and short to ground (power
limitation) indication – Thermal shutdown indication
■ Protections
– Undervoltage shutdown – Overvoltage clamp – Load current limitation – Self limiting of fast thermal transients – Protection against loss of ground and loss
of V
CC
– Overtemperature shutdown with auto
restart (thermal shutdown)
detection
CC
CC
CC
ON
LIMH
S
41 V
4.5 to 28 V
50 mΩ
27 A
(1)
2 µA
PowerSSO-24
– Reverse battery protected – Electrostatic discharge protection
Application
■ All types of resistive, inductive and capacitive
loads
■ Suitable as LED driver
Description
The VNQ5E050AK-E is a quad channel high-side driver manufactured using ST proprietary VIPower™ M0-5 technology and housed in PowerSSO-24 package. The device is designed to drive 12 V automotive grounded loads, and to provide protection and diagnostics. It also implements a 3 V and 5 V CMOS compatible interface for the use with any microcontroller.
The device integrates advanced protective functions such as load current limitation, inrush and overload active management by power limitation, overtemperature shut-off with auto-restart and overvoltage active clamp.
A dedicated analog current sense pin is associated with every output channel providing enhanced diagnostic functions including fast detection of overload and short-circuit to ground through power limitation indication, overtemperature indication, short-circuit to V diagnosis and on-state and off-state open-load detection. The current sensing and diagnostic feedback of the whole device can be disabled by pulling the CS_DIS pin high to share external sense resistor with similar devices.
CC
October 2010 Doc ID 13519 Rev 6 1/37
www.st.com
1
Page 2
Contents VNQ5E050AK-E
Contents
1 Block diagram and pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.4 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2.5 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3 Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
3.1 GND protection network against reverse battery . . . . . . . . . . . . . . . . . . . 24
3.1.1 Solution 1: resistor in the ground line (RGND only) . . . . . . . . . . . . . . . . 24
3.1.2 Solution 2: diode (DGND) in the ground line . . . . . . . . . . . . . . . . . . . . . 25
3.2 Load dump protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
3.3 MCU I/Os protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
3.4 Current sense and diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
3.4.1 Short to VCC and off-state open-load detection . . . . . . . . . . . . . . . . . . 27
3.5 Maximum demagnetization energy (VCC = 13.5 V) . . . . . . . . . . . . . . . . . 28
4 Package and PC board thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
4.1 PowerSSO-24 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
5 Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
5.1 ECOPACK® . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
5.2 PowerSSO-24 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
5.3 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
6 Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
2/37 Doc ID 13519 Rev 6
Page 3
VNQ5E050AK-E List of tables
List of tables
Table 1. Pin functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Table 2. Suggested connections for unused and not connected pins . . . . . . . . . . . . . . . . . . . . . . . . 6
Table 3. Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 4. Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Table 5. Power section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Table 6. Switching (V
Table 7. Logic inputs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Table 8. Protections and diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Table 9. Current sense (8 V < V Table 10. Open-load detection (8V<V
Table 11. Truth table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table 12. Electrical transient requirements (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Table 13. Electrical transient requirements (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Table 14. Electrical transient requirements (part 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Table 15. Thermal parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Table 16. PowerSSO-24 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Table 17. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Table 18. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
=13V; Tj= 25 °C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
CC
< 18 V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
CC
<18V). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
CC
Doc ID 13519 Rev 6 3/37
Page 4
List of figures VNQ5E050AK-E
List of figures
Figure 1. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 2. Configuration diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Figure 3. Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 4. Current sense delay characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 5. Open-load off-state delay timing. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 6. Switching characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 7. Delay response time between rising edge of output current and rising edge of current
sense (CS enabled) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 8. Output voltage drop limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 9. I
OUT/ISENSE
Figure 10. Maximum current sense ratio drift vs load current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 11. Normal operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 12. Overload or short to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 13. Intermittent overload . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 14. Off-state open-load with external circuitry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 15. Short to V Figure 16. T
evolution in overload or short to GND. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
j
Figure 17. Off-state output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 18. High level input current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 19. Input clamp voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 20. Input low level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 21. Input high level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 22. Input hysteresis voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 23. On-state resistance vs T Figure 24. On-state resistance vs V
Figure 25. Undervoltage shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 26. Turn-on voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 27. I
LIMH
vs T
Figure 28. Turn-off voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 29. CS_DIS high level voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 30. CS_DIS clamp voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 31. CS_DIS low level voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 32. Application schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 33. Current sense and diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 34. Maximum turn-off current versus inductance (for each channel) . . . . . . . . . . . . . . . . . . . . 28
Figure 35. PowerSSO-24 PC board. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Figure 36. Rthj-amb vs PCB copper area in open box free air condition (one channel ON) . . . . . . . . 29
Figure 37. PowerSSO-24 thermal impedance junction ambient single pulse (one channel ON). . . . . 30
Figure 38. Thermal fitting model of a double channel HSD in PowerSSO-24 . . . . . . . . . . . . . . . . . . . 30
Figure 39. PowerSSO-24 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Figure 40. PowerSSO-24 tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Figure 41. PowerSSO-24 tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
vs I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
CC
case
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
OUT
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
case
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
4/37 Doc ID 13519 Rev 6
Page 5
VNQ5E050AK-E Block diagram and pin configuration

1 Block diagram and pin configuration

Figure 1. Block diagram

V
Signal Clamp
CC
Undervoltage
IN1
IN2
IN3
IN4
CS_ DIS
CS1
CS2
CS3
CS4

Table 1. Pin functions

LOGIC
Control & Diagnostic 1
DRIVER
Over temp.
V
SENSEH
(ACTIVE POWER LIMITATION)
Current
Limitation
Current
Sense
OVERLOAD PROTECTION
Power Clamp
V
ON
Limitation
OFF State Open load
Name Function
V
CC
OUTPUT
GND
Battery connection.
Power output.
n
Ground connection. Must be reverse battery protected by an external diode/resistor network.
CH 1
GND
CH 4
CH 3
Channels 2, 3 & 4
CONTROL & DIAGNOSTIC
CH 2
OUT4
OUT3
OUT2
OUT1
INPUT
n
CURRENT
SENSE
n
Voltage controlled input pin with hysteresis, CMOS compatible. Controls output switch state.
Analog current sense pin, delivers a current proportional to the load current.
CS_DIS Active high CMOS compatible pin, to disable the current sense pin.
Doc ID 13519 Rev 6 5/37
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Block diagram and pin configuration VNQ5E050AK-E

Figure 2. Configuration diagram (top view)

V
GND
INPUT1
CURRENT SENSE1
INPUT2
CURRENT SENSE2
INPUT3
CURRENT SENSE3
INPUT4
CURRENT SENSE4
CS_DIS.
V
CC
CC
OUTPUT1
OUTPUT1
OUTPUT1
OUTPUT2
OUTPUT2
OUTPUT2
OUTPUT3
OUTPUT3
OUTPUT3
OUTPUT4
OUTPUT4
OUTPUT4
TAB = V

Table 2. Suggested connections for unused and not connected pins

CC
Connection / pin Current sense N.C. Output Input CS_DIS
Floating Not allowed X X X X
To ground
Through 1 kΩ
resistor
Through 22 kΩ
X
resistor
Through 10 kΩ
resistor
Through 10 kΩ
resistor
6/37 Doc ID 13519 Rev 6
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VNQ5E050AK-E Electrical specifications

2 Electrical specifications

Figure 3. Current and voltage conventions

I
S
V
CC
I
CSD
GND
OUTPUTn
CURRENT S
ENSEn
I
GND
CS_DIS
I
V
CSD
INn
INPUTn
V
INn
V
I
SENSEn
V
SENSEn
Fn
I
OUTn
V
OUTn
V
CC
Note: V
Fn
= V
- VCC during reverse battery condition.
OUTn

2.1 Absolute maximum ratings

Stressing the device above the ratings listed in the “Absolute maximum ratings” tables may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to the conditions reported in this section for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents.

Table 3. Absolute maximum ratings

Symbol Parameter Value Unit
V
CC
-V
-I
GND
I
OUT
-I
OUT
I
IN
I
CSD
-I
CSENSE
V
CSENSE
DC supply voltage 41 V
Reverse DC supply voltage 0.3 V
CC
DC reverse ground pin current 200 mA
DC output current Internally limited A
Reverse DC output current 20 A
DC input current -1 to 10 mA
DC current sense disable input current -1 to 10 mA
DC reverse CS pin current 200 mA
Current sense maximum voltage
V
- 41 to
CC
+V
CC
V
Doc ID 13519 Rev 6 7/37
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Electrical specifications VNQ5E050AK-E
Table 3. Absolute maximum ratings (continued)
Symbol Parameter Value Unit
Maximum switching energy (single pulse)
E
MAX
(L = 3 mH; R I
OUT=IlimL
=0Ω; V
L
(Typ.))
=13.5V; T
bat
jstart
=150°C;
104 mJ
Electrostatic discharge (human body model: R = 1.5 KΩ; C=100pF)
4000 2000 4000 5000 5000
V V V V V
V
V
ESD
ESD
T
T
stg
– Input – Current sense –CS_DIS – Output –V
CC
Charge device model (CDM-AEC-Q100-011) 750 V
Junction operating temperature -40 to 150 °C
j
Storage temperature -55 to 150 °C

2.2 Thermal data

Table 4. Thermal data

Symbol Parameter Max. value Unit
R
thj-case
R
thj-amb
Thermal resistance junction-case (with one channel ON) 2.8 °C/W
Thermal resistance junction-ambient See Figure 36 °C/W

2.3 Electrical characteristics

Values specified in this section are for 8 V < VCC<28V, -40°C< Tj< 150 °C, unless otherwise stated.

Table 5. Power section

Symbol Parameter Test conditions Min. Typ. Max. Unit
V
V
V
USDhyst
R
V
Operating supply voltage 4.5 13 28 V
CC
Undervoltage shutdown 2.5 3.5 4.5 V
USD
Undervoltage shutdown hysteresis
On-state resistance
ON
Clamp voltage IS=20mA 41 46 52 V
clamp
(1)
I
=2A; Tj=25°C 50
OUT
=2A; Tj= 150 °C 100
OUT
=2A; VCC=5V; Tj=25°C 65
I
OUT
0.5 V
mΩI
8/37 Doc ID 13519 Rev 6
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VNQ5E050AK-E Electrical specifications
Table 5. Power section (continued)
Symbol Parameter Test conditions Min. Typ. Max. Unit
Off-state; V V
I
S
Supply current
IN=VOUT=VSENSE=VCSD
On-state; VCC=13V; VIN=5V; I
=0A
OUT
VIN=V Tj=25°C
I
L(off)
1. For each channel
2. PowerMOS leakage included.
Table 6. Switching (VCC=13V; Tj=25°C)
Off-state output current
Output - VCC diode
V
F
voltage
(1)
(1)
V
IN=VOUT
= 125 °C
T
j
-I
=2A; Tj= 150 °C 0.7 V
OUT
=13V; Tj=25°C;
CC
=0V; VCC=13V;
OUT
=0V; VCC=13V;
=0V
(2)5(2)
2
814mA
00.01 3
05
Symbol Parameter Test conditions Min. Typ. Max. Unit
(dV
(dV
t
d(on)
t
d(off)
OUT
OUT
Turn-on delay time RL=6.5Ω (see Figure 6.)20 µs
Turn-off delay time RL=6.5Ω (see Figure 6.)35 µs
/dt)onTurn-on voltage slope RL=6.5Ω
/dt)
Turn-off voltage slope RL=6.5Ω
off
See
Figure 26
See
Figure 28
µA
µA
V/µs
V/µs
W
W
ON
OFF
Switching energy losses during t
won
Switching energy losses during
t
woff
RL=6.5Ω (see Figure 6.)0.15 mJ
RL=6.5Ω (see Figure 6.)0.25 mJ

Table 7. Logic inputs

Symbol Parameter Test conditions Min. Typ. Max. Unit
V
I
V
I
V
I(hyst)
V
V
I
CSDL
V
CSDH
CSDL
Input low level voltage 0.9 V
IL
Low level input current VIN=0.9V 1 µA
IL
Input high level voltage 2.1 V
IH
High level input current VIN=2.1V 10 µA
IH
Input hysteresis voltage 0.25 V
I
=1mA 5.5 7
Input clamp voltage
ICL
IN
=-1mA -0.7
I
IN
CS_DIS low level voltage 0.9 V
Low level CS_DIS current V
=0.9V 1 µA
CSD
CS_DIS high level voltage 2.1 V
V
Doc ID 13519 Rev 6 9/37
Page 10
Electrical specifications VNQ5E050AK-E
Table 7. Logic inputs (continued)
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CSDH
V
CSD(hyst)
V
CSCL

Table 8. Protections and diagnostics

High level CS_DIS current V
=2.1V 10 µA
CSD
CS_DIS hysteresis voltage 0.25 V
I
=1mA 5.5 7
CS_DIS clamp voltage
CSD
=-1mA -0.7
I
CSD
(1)
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
limH
I
limL
T
TSD
T
T
T
HYST
V
DEMAG
DC short circuit current
Short circuit current during thermal cycling
Shutdown temperature
Reset temperature TRS + 1 TRS + 5 °C
R
Thermal reset of
RS
STATUS
Thermal hysteresis
TSD-TR
)
(T
Turn-off output voltage clamp
VCC= 13 V 19 27 38 A
5V<V
V
CC
<28V 38 A
CC
=13V; TR<Tj<T
TSD
7A
150 175 200 °C
135 °C
7°C
I
=2A; VIN=0;
OUT
L=6mH
-41 VCC-46 VCC-52 V
V
CC
V
=0.1A;
I
V
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related

Table 9. Current sense (8 V < VCC<18V)

Output voltage drop
ON
limitation
diagnostic signals must be used together with a proper software strategy. If the device is subjected to abnormal conditions, this software must limit the duration and number of activation cycles.
OUT
Tj= -40 °C...150 °C (see Figure 8)
25 mV
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
=0.05A;
OUT
K
K
dK
1/K1
I
0
OUT/ISENSE
I
1
OUT/ISENSE
Current sense ratio
(1)
drift
V T
I V T
= 0.5 V; V
SENSE
= -40 °C...150 °C
j
=1A;
OUT
=4V; V
SENSE
= -40 °C...150 °C
j
CSD
Tj= 25 °C...150 °C
=1A; V
I
OUT
V
CSD
= -40 °C to 150 °C
T
j
SENSE
=0V;
CSD
=0V;
=4V;
=0V;
1050 2110 3170
1510
1890
2650
1510
1890
2270
-13 13 %
10/37 Doc ID 13519 Rev 6
Page 11
VNQ5E050AK-E Electrical specifications
Table 9. Current sense (8 V < VCC< 18 V) (continued)
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
=2A;
OUT
K
2
I
OUT/ISENSE
V T
=4V; V
SENSE
= -40 °C...150 °C
j
Tj= 25 °C...150 °C
CSD
=0V;
1600 1600
1800 1800
2230 2000
dK
2/K2
K
dK
3/K3
I
SENSE0
I
OL
Current sense ratio
(1)
drift
I
3
OUT/ISENSE
Current sense ratio
(1)
drift
Analog sense leakage current
Open-load on-state current detection threshold
=2A; V
I
OUT
V
CSD
= -40 °C to 150 °C
T
j
I
=4A;
OUT
V
SENSE
= -40 °C...150 °C
T
j
=0V;
=4V; V
SENSE
CSD
Tj= 25 °C...150 °C
=4A; V
I
OUT
V
CSD
= -40 °C to 150 °C
T
j
=0A; V
I
OUT
V
CSD
= -40 °C...150 °C
T
j
=0A; V
I
OUT
V
CSD
= -40 °C...150 °C
T
j
I
=2A; V
OUT
V
CSD
= -40 °C...150 °C
T
j
=5V; 8V<VCC<18V;
V
IN
I
SENSE
SENSE
=0V;
SENSE
=5V; VIN=0V;
SENSE
=0V; VIN=5V;
SENSE
=5V; VIN=5V;
=5µA
=4V;
=0V;
=4V;
=0V;
=0V;
=0V;
-8 8 %
1620
1770
1990
1620
1770
1920
-6 6 %
01
02
µA
01
420mA
V
SENSE
Max analog sense output voltage
I
OUT
=4A; V
=0V 5 V
CSD
Analog sense output
V
SENSEH
voltage in fault condition
(2)
VCC=13V; R
=10KΩ 8V
SENSE
Analog sense output
I
SENSEH
current in fault condition
(2)
Delay response time
t
DSENSE1H
from falling edge of CS_DIS pin
Delay response time
t
DSENSE1L
from rising edge of CS_DIS pin
Delay response time
t
DSENSE2H
from rising edge of INPUT pin
VCC=13V; V
V I
<4V, 0.5A<I
SENSE
=90% of I
SENSE
(see Figure 4)
V I
SENSE
SENSE
<4V; 0.5A<I
=10% of I
(see Figure 4)
V I
< 4 V, 0.5 A < I
SENSE
=90% of I
SENSE
(see Figure 4)
=5V 9 mA
SENSE
<4A
OUT
SENSEMAX
OUT
SENSEMAX
OUT
SENSEMAX
<4A
<4A
40 100 µs
520µs
80 250 µs
Doc ID 13519 Rev 6 11/37
Page 12
Electrical specifications VNQ5E050AK-E
Table 9. Current sense (8 V < VCC< 18 V) (continued)
Symbol Parameter Test conditions Min. Typ. Max. Unit
Δ
t
DSENSE2H
t
DSENSE2L
Delay response time between rising edge of output current and rising edge of current sense
Delay response time from falling edge of INPUT pin
V I
SENSE
I
OUT
I
OUTMAX
V I (see Figure 4)
<4V,
SENSE
=90% of I
=90% of I
< 4 V, 0.5 A < I
SENSE
=10% of I
SENSE
SENSEMAX,
OUTMAX
=2A (see Figure 7)
OUT
SENSEMAX
60 µs
<4A
80 250 µs
1. Parameter guaranteed by design; it is not tested.
2. Fault condition includes: power limitation, overtemperature and open-load off-state detection.

Table 10. Open-load detection (8V<VCC<18V)

Symbol Parameter Test conditions Min. Typ. Max. Unit
V
OL
t
DSTKON
I
L(off2)r
I
L(off2)f
td_vol
Open-load off-state voltage detection threshold
Output short circuit to Vcc detection delay at turn-off
Off-state output current at V
=4V
OUT
Off-state output current at
=2V
V
OUT
Delay response from output rising edge to V
SENSE
rising
edge in open-load
V
=0V 2
IN
See Figure 5 180 1200 µs
VIN=0V; V V
rising from 0 V to 4 V
OUT
V
=0V;
IN
V
SENSE=VSENSEH
V
falling from VCC to 2 V
OUT
V
=4V; VIN=0V
OUT
SENSE
=90% of V
V
SENSE
=0V;
SENSEH
-120 0 µA
-50 90 µA
See
Figure 5
4V
20 µs

Figure 4. Current sense delay characteristics

INPUT
CS_DIS
LOAD CURRENT
SENSE CURRENT
t
DSENSE2H
12/37 Doc ID 13519 Rev 6
t
DSENSE1L
t
DSENSE1H
t
DSENSE2L
Page 13
VNQ5E050AK-E Electrical specifications

Figure 5. Open-load off-state delay timing

OUTPUT STUCK TO V
V
IN
V
CS

Figure 6. Switching characteristics

V
OUT
t
Won
80%
dV
/dt
OUT
(on)
t
r
10%
CC
V
t
DSTKON
t
Woff
90%
t
f
> V
OUT
V
SENSEH
dV
OL
OUT
/dt
(off)
t
INPUT
t
d(on)
t
d(off)
t
Doc ID 13519 Rev 6 13/37
Page 14
Electrical specifications VNQ5E050AK-E
Figure 7. Delay response time between rising edge of output current and rising
edge of current sense (CS enabled)
V
IN
Δ
t
DSENSE2H
t
I
OUT
90% I
OUTMAX
I
OUTMAX
t
I
SENSE
90% I
I
SENSEMAX
SENSEMAX
t

Figure 8. Output voltage drop limitation

VCC-V
OUT
Tj=150°C
V
ON
V
ON/RON
(T)
=25°C
T
j
T
=-40°C
j
I
OUT
14/37 Doc ID 13519 Rev 6
Page 15
VNQ5E050AK-E Electrical specifications
Figure 9. I
I
/ I
out
sense
2800
2600
2400
max T
2200
2000
1800
1600
1400
1200
min T
11,522,533,54
OUT/ISENSE
vs I
max Tj = -40 °C to 150 °C
= 25 °C to 150 °C
j
= 25 °C to 150 °C =
j
OUT
min T
= -40 °C to 150 °C
j
I
OUT
typical value
(A)

Figure 10. Maximum current sense ratio drift vs load current

dk/k(%)
20
15
10
5
0
-5
-10
-15
-20
1234
Note: Parameter guaranteed by design; it is not tested.
I
OUT
(A)
Doc ID 13519 Rev 6 15/37
Page 16
Electrical specifications VNQ5E050AK-E

Table 11. Truth table

Conditions Input Output Sense (V
Normal operation
L
H
L H
CSD
0
Nominal
=0V)
(1)
Overtemperature
Undervoltage
Overload
Short circuit to GND (power limitation)
Open-load off-state (with external pull-up)
Short circuit to V
CC
(external pull-up disconnected)
Negative output voltage clamp
1. If the V and external circuit.
is high, the SENSE output is at a high impedance, its potential depends on leakage currents
CSD
L
H
L
H
H
L L
L L
X
0
V
SENSEH
0 0
Nominal
(no power limitation)
H
Cycling
V
SENSEH
(power limitation)
L
H
LHV
L
H
L L
H H
0
V
SENSEH
SENSEH
V
SENSEH
< Nominal
LL0
16/37 Doc ID 13519 Rev 6
Page 17
VNQ5E050AK-E Electrical specifications

Table 12. Electrical transient requirements (part 1)

ISO 7637-2:
2004(E)
Test pulse
Test levels
(1)
Number of
pulses or
III IV Min. Max.
test times
Burst cycle/pulse
repetition time
Delays and impedance
1 -75V -100V 5000 pulses 0.5s 5s 2 ms, 10Ω
2a +37V +50V 5000 pulses 0.2s 5s 50µs, 2Ω
3a -100V -150V 1h 90ms 100ms 0.1µs, 50Ω
3b +75V +100V 1h 90ms 100ms 0.1µs, 50Ω
4 -6V -7V 1 pulse 100ms, 0.01Ω
(2)
5b
1. The above test levels must be considered referred to VCC= 13.5V except for pulse 5b.
2. Valid in case of external load dump clamp: 40V maximum referred to ground.

Table 13. Electrical transient requirements (part 2)

ISO 7637-2:
+65V +87V 1 pulse 400ms, 2Ω
Test level results
2004E
Test p ulse
III VI
1C C
2a C C
3a C C
3b C C
4C C
(1)
5b
1. Valid in case of external load dump clamp: 40V maximum referred to ground.

Table 14. Electrical transient requirements (part 3)

CC
Class Contents
C All functions of the device performed as designed after exposure to disturbance.
E
One or more functions of the device did not perform as designed after exposure to disturbance and cannot be returned to proper operation without replacing the device.
Doc ID 13519 Rev 6 17/37
Page 18
Electrical specifications VNQ5E050AK-E

2.4 Waveforms

Figure 11. Normal operation

Normal operation
INPUT
Nominal load Nominal load
I
OUT
V
SENSE
V
CS_DIS

Figure 12. Overload or short to GND

Overload or Short to GND
INPUT
I
OUT
V
SENSE
I
LimH
>
Power Limitation
I
LimL
Thermal cycling
>
V
CS_DIS
18/37 Doc ID 13519 Rev 6
Page 19
VNQ5E050AK-E Electrical specifications

Figure 13. Intermittent overload

Intermittent Overload
INPUT
Overload
I
>
LimH
I
>
LimL
I
OUT
V
V
SENSE
V
CS_DIS
SENSEH
>

Figure 14. Off-state open-load with external circuitry

OFF-State Open Load
with external circutry
Nominal load
INPUT
V
> V
OUT
V
t
DSTK(on)
OL
V
SENSEH
>
V
OUT
I
OUT
V
SENSE
V
CS_DIS
OL
Doc ID 13519 Rev 6 19/37
Page 20
Electrical specifications VNQ5E050AK-E
Figure 15. Short to V
V
OUT
I
OUT
V
CS_DIS
CC
Resistive
Short to V
V
OL
t
DSTK(on)
CC
Short to V
CC
Hard
Short to V
V
> V
OUT
t
DSTK(on)
CC
OL

Figure 16. Tj evolution in overload or short to GND

TJ evolution in
Overload or Short to GND
INPUT
Self-limitation of fast thermal transients
T
J_START
T
J
I
>
LimH
I
OUT
Power Limitation
T
TSD
T
R
< I
T
HYST
LimL
20/37 Doc ID 13519 Rev 6
Page 21
VNQ5E050AK-E Electrical specifications
)
)
)
)
)
)

2.5 Electrical characteristics curves

Figure 17. Off-state output current Figure 18. High level input current

Iloff (nA)
700
600
500
400
300
200
100
0
-50 -25 0 25 50 75 100 125 150 175
Off State Vcc=13V
Vin=Vout=0V
Tc (°C
Iih (µA)
5
4,5
4
3,5
3
2,5
2
1,5
0,5
0
Vin=2.1V
1
-50 -25 0 25 50 75 100 125 150 175
Tc (°C

Figure 19. Input clamp voltage Figure 20. Input low level

Vicl (V)
7
6,8
6,6
6,4
6,2
6
5,8
5,6
5,4
5,2
5
lin=1mA
-50 -25 0 25 50 75 100 125 150 175
Tc (°C
Vil (V)
2
1,8
1,6
1,4
1,2
1
0,8
0,6
0,4
0,2
0
-50 -25 0 25 50 75 100 125 150 175
Tc (°C

Figure 21. Input high level Figure 22. Input hysteresis voltage

Vih (V)
4
3,5
3
2,5
2
1,5
1
0,5
0
-50 -25 0 25 50 75 100 125 150 175
Tc (°C
Vihyst (V)
1
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0
-50 -25 0 25 50 75 100 125 150 175
Tc (°C
Doc ID 13519 Rev 6 21/37
Page 22
Electrical specifications VNQ5E050AK-E
Figure 23. On-state resistance vs T
Ron (mOhm)
150
Iout= 2A
120
90
60
30
0
Vcc=13V
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
case
Figure 24. On-state resistance vs V
Ron (mOhm)
100
80
60
40
20
0
0 5 10 15 20 25 30 35 40
Vcc (V)
Tc=150°C
Tc=125°C
Tc=25°C
Tc=-40°C

Figure 25. Undervoltage shutdown Figure 26. Turn-on voltage slope

Vusd (V)
16
14
12
10
8
6
4
2
0
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
(dVout/dt )On (V/ms)
1000
900
800
700
600
500
400
300
200
100
0
-50 -25 0 25 50 75 100 125 150 175
Vcc=13V
RI=6.5 Ohm
Tc (°C)
CC
Figure 27. I
LIMH
vs T
case
Ilimh (A)
40
35
30
25
20
15
10
Vcc=13V
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
22/37 Doc ID 13519 Rev 6

Figure 28. Turn-off voltage slope

(dVout/dt )Off (V/ms)
600
550
500
450
400
350
300
250
200
150
100
50
0
-50 -25 0 25 50 75 100 125 150 175
Vcc=13V
RI= 6.5 Ohm
Tc (°C)
Page 23
VNQ5E050AK-E Electrical specifications

Figure 29. CS_DIS high level voltage Figure 30. CS_DIS clamp voltage

Vcsdh (V)
4
3,5
3
2,5
2
1,5
1
0,5
0
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)

Figure 31. CS_DIS low level voltage

Vcsdl (V)
3
2,5
2
Vcsdcl(V)
10
9
8
Iin = 1 mA
7
6
5
4
3
2
1
0
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
1,5
1
0,5
0
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
Doc ID 13519 Rev 6 23/37
Page 24
Application information VNQ5E050AK-E

3 Application information

Figure 32. Application schematic

+5V
V
CC
R
prot
Μ
CU
R
prot
CS_DIS
IINPUT
OUTPUT
D
ld
R
prot
C
ext
CURRENT SENSE
R
SENSE
GND
R
GND
GND
D
GND
V
Note: Channel 2, 3, 4 have the same internal circuit as channel 1.

3.1 GND protection network against reverse battery

This section provides two solutions for implementing a ground protection network against reverse battery.
3.1.1 Solution 1: resistor in the ground line (R
This can be used with any type of load.
The following is an indication on how to dimension the R
1. R
2. R
where -I maximum rating section of the device datasheet.
≤ 600 mV / (I
GND
≥ (−VCC) / (-I
GND
is the DC reverse ground pin current and can be found in the absolute
GND
S(on)max
GND
).
)
GND
only)
resistor.
GND
Power Dissipation in R
(when VCC< 0: during reverse battery situations) is:
GND
Equation 1
= (-VCC)2/R
24/37 Doc ID 13519 Rev 6
P
D
GND
Page 25
VNQ5E050AK-E Application information
This resistor can be shared amongst several different HSDs. Please note that the value of this resistor should be calculated with formula (1) where I
S(on)max
becomes the sum of the
maximum on-state currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground then the R
will produce a shift (I
GND
S(on)max
* R
) in the input thresholds and the status output
GND
values. This shift will vary depending on how many devices are on in the case of several high side drivers sharing the same R
GND
.
If the calculated power dissipation leads to a large resistor or several devices have to share the same resistor then ST suggests to utilize Section 3.1.2: Solution 2: diode (DGND) in the
ground line.
3.1.2 Solution 2: diode (D
A resistor (R
=1kΩ) should be inserted in parallel to D
GND
) in the ground line
GND
inductive load.
This small signal diode can be safely shared amongst several different HSDs. Also in this case, the presence of the ground network will produce a shift (≈600mV) in the input threshold and in the status output values if the microprocessor ground is not common to the device ground. This shift will not vary if more than one HSD shares the same diode/resistor network.

3.2 Load dump protection

Dld is necessary (voltage transient suppressor) if the load dump peak voltage exceeds the V
max DC rating. The same applies if the device is subject to transients on the VCC line
CC
that are greater than the ones shown in the ISO 7637-2: 2004(E) table.

3.3 MCU I/Os protection

If a ground protection network is used and negative transients are present on the VCC line, the control pins will be pulled negative. ST suggests to insert a resistor (R prevent the microcontroller I/O pins to latch-up.
The value of these resistors is a compromise between the leakage current of microcontroller and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of microcontroller I/Os.
if the device drives an
GND
prot
) in line to
Equation 2
-V
CCpeak/Ilatchup
≤ R
prot
≤ (V
OHμC-VIH-VGND
) / I
IHmax
Calculation example:
For V
CCpeak
5kΩ ≤ R
= -100 V and I
≤ 180 kΩ.
prot
Recommended values: R
latchup
=10kΩ, C
prot
≥ 20 mA; V
EXT
≥ 4.5 V
OHμC
=10nF.
Doc ID 13519 Rev 6 25/37
Page 26
Application information VNQ5E050AK-E

3.4 Current sense and diagnostic

The current sense pin performs a double function (see Figure 33: Current sense and
diagnostic):
● Current mirror of the load current in normal operation, delivering a current
proportional to the load one according to a known ratio K The current I external resistor R minimum (see parameter V
can be easily converted to a voltage V
SENSE
. Linearity between I
SENSE
SENSE
in Table 9: Current sense (8 V < VCC<18V)). The
OUT
and V
current sense accuracy depends on the output current (refer to current sense electrical characteristics Table 9: Current sense (8 V < V
● Diagnostic flag in fault conditions, delivering a fixed voltage V
maximum current I
SENSEH
in case of the following fault conditions (refer to Tr u th t a b l e):
<18V)).
CC
– Power limitation activation
–Overtemperature
–Short to V
in off-state
CC
– Open-load in off-state with additional external components.
A logic level high on CS_DIS pin sets at the same time all the current sense pins of the device in a high impedance state, thus disabling the current monitoring and diagnostic detection. This feature allows multiplexing of the microcontroller analog inputs by sharing of sense resistance and ADC line among different devices.
.
X
SENSE
by means of an
SENSE
is ensured up to 5V
SENSEH
up to a

Figure 33. Current sense and diagnostic

V
PU_CMD
R
I
Loff2r
I
Loff2f
R
PU
PU
Load
PD
V
BAT
V
CC
Main MOSn
I
OUT/KX
41V
Overtemperature
+
OL OFF
Pwr_Lim
CS_DIS
I
SENSEH
V
SENSEH
CURRENT
SENSEn
R
PROT
To uC ADC
R
SENSE
V
SENSE
INPUTn
-
V
OL
OUTn
GND
26/37 Doc ID 13519 Rev 6
Page 27
VNQ5E050AK-E Application information

3.4.1 Short to VCC and off-state open-load detection

Short to V
A short circuit between V V
SENSEH
CC
and output is indicated by the relevant current sense pin set to
CC
during the device off-state. Small or no current is delivered by the current sense
during the on-state depending on the nature of the short circuit.
Off-state open-load with external circuitry
Detection of an open-load in off mode requires an external pull-up resistor R the output to a positive supply voltage V
It is preferable V
to be switched off during the module standby mode in order to avoid the
PU
PU
.
connecting
PU
overall standby current consumption to increase in normal conditions, i.e. when load is connected.
An external pull down resistor R
connected between output and GND is mandatory to
PD
avoid misdetection in case of floating outputs in off-state (see Figure 33: Current sense and
diagnostic).
R
must be selected in order to ensure V
PD
OUT < VOLmin
unless pulled up by the external
circuitry:
Equation 3
VVIRV
2
=<⋅=
OUT
−
OFFupPull
_
OLfoffLPD
min)2(
R
≤ 22 KΩ is recommended.
PD
For proper open-load detection in off-state, the external pull-up resistor must be selected according to the following formula:
Equation 4
IRRVR
⋅⋅−⋅
V
OUT
−
For the values of V
(8V<V
CC
<18V).
OLmin,VOLmax, IL(off2)r
=
ONupPull
_
and I
RR
+
PDPU
see Table 10: Open-load detection
L(off2)f
roffLPDPUPUPD
)2(
OL
max
VV
4
=>
Doc ID 13519 Rev 6 27/37
Page 28
Application information VNQ5E050AK-E

3.5 Maximum demagnetization energy (VCC=13.5V)

Figure 34. Maximum turn-off current versus inductance (for each channel)

100
A
B
C
10
I (A)
1
0,1 1 10 100L (mH)
A: T
B: T
C: T
VIN, I
= 150°C single pulse
jstart
= 100°C repetitive pulse
jstart
= 125°C repetitive pulse
jstart
L
Note: Values are generated with R
In case of repetitive pulses, T must not exceed the temperature specified above for curves A and B.
Demagnetization Demagnetization Demagnetization
=0Ω
L
(at beginning of each demagnetization) of every pulse
jstart
t
28/37 Doc ID 13519 Rev 6
Page 29
VNQ5E050AK-E Package and PC board thermal data

4 Package and PC board thermal data

4.1 PowerSSO-24 thermal data

Figure 35. PowerSSO-24 PC board

Note: Layout condition of R
area = 77 mm x 86 mm, PCB thickness = 1.6 mm, Cu thickness = 70 µm (front and back side), Copper areas: from minimum pad lay-out to 8 cm
Figure 36.
RTHj_amb(°C/W)
R
thj-amb
55
50
45
40
35
30
0246810
and Zth measurements (PCB: Double layer, Thermal Vias, FR4
th
2
).
vs PCB copper area in open box free air condition (one channel ON)
PCB Cu heatsink area (cm^2)
Doc ID 13519 Rev 6 29/37
Page 30
Package and PC board thermal data VNQ5E050AK-E
Figure 37.
PowerSSO-24 thermal impedance junction ambient single pulse (one channel ON)
ZTH (°C/W)
1000
100
10
1
0.1
0.0001 0.001 0.01 0.1 1 10 100 1000
Time (s)
Footprint
2
2 cm
8 cm
2

Figure 38. Thermal fitting model of a double channel HSD in PowerSSO-24

Note: The fitting model is a simplified thermal tool and is valid for transient evolutions where the
embedded protections (power limitation or thermal cycling during thermal shutdown) are not triggered.
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VNQ5E050AK-E Package and PC board thermal data
Equation 5: pulse calculation formula
Z
THδ
R
TH
δ Z
THtp
1 δ–()+⋅=
where δ = tP/T

Table 15. Thermal parameters

Area/island (cm2)Footprint28
R1 = R7 = R9 = R11 (°C/W) 0.4
R2 = R8 = R10 = R12 (°C/W) 2
R3 (°C/W) 6
R4 (°C/W) 7.7
R5 (°C/W) 9 9 8
R6 (°C/W) 28 17 10
C1 = C7 = C9 = C11 (W.s/°C) 0.001
C2 = C8 = C10 = C12 (W.s/°C) 0.0022
C3 (W.s/°C) 0.025
C4 (W.s/°C) 0.75
C5 (W.s/°C) 1 4 9
C6 (W.s/°C) 2.2 5 17
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Package and packing information VNQ5E050AK-E

5 Package and packing information

5.1 ECOPACK
®
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com
ECOPACK® is an ST trademark.

5.2 PowerSSO-24 mechanical data

Figure 39. PowerSSO-24 package dimensions

.
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VNQ5E050AK-E Package and packing information

Table 16. PowerSSO-24 mechanical data

Millimeters
Symbol
Min. Typ. Max.
A 2.45
A2 2.15 2.35
a1 0 0.1
b0.33 0.51
c0.23 0.32
D 10.10 10.50
E7.40 7.60
e0.8
e3 8.8
F2.3
G 0.1
H 10.1 10.5
h 0.4
k0° 8°
L0.55 0.85
O1.2
Q0.8
S2.9
T3.65
U1.0
N 10°
X4.1 4.7
Y6.5 7.1
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Package and packing information VNQ5E050AK-E

5.3 Packing information

Figure 40. PowerSSO-24 tube shipment (no suffix)

Base q.ty 49 Bulk q.ty 1225
C
B
A

Figure 41. PowerSSO-24 tape and reel shipment (suffix “TR”)

Tube length (± 0.5) 532 A 3.5 B 13.8 C (± 0.1) 0.6
All dimensions are in mm.
Reel dimensions
Base q.ty 1000 Bulk q.ty 1000 A (max) 330 B (min) 1.5 C (± 0.2) 13 F 20.2 G (+ 2 / -0) 24.4 N (min) 100 T (max) 30.4
Tape dimensions
According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986
Tape width W 24 Tape hole spacing P0 (± 0.1) 4 Component spacing P 12 Hole diameter D (± 0.05) 1.55 Hole diameter D1 (min) 1.5 Hole position F (± 0.1) 11.5 Compartment depth K (max) 2.85 Hole spacing P1 (± 0.1) 2
All dimensions are in mm.
End
Start
Top
cover
tape
500mm min
Empty components pockets saled with cover tape.
User direction of feed
No componentsNo components Components
500mm min
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VNQ5E050AK-E Order codes

6 Order codes

Table 17. Device summary

Order codes
Package
Tube Tape and reel
PowerSSO-24 VNQ5E050AK-E VNQ5E050AKTR-E
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Revision history VNQ5E050AK-E

7 Revision history

Table 18. Document revision history

Date Revision Changes
06-Jun-2007 1 Initial release.
Updated Table 9: Current sense (8 V < VCC<18V): – added dk1/k1, dk2/k2, dk3/k3 parameters – changed t
DSENSE2H
Updated Table 10: Open-load detection (8V<V – added I
L(off2)r
Added Figure 9.: I Added Figure 10.: Maximum current sense ratio drift vs load current
27-Mar-2008 2
Added Section 2.4: Waveforms. Added Section 2.5: Electrical characteristics curves. Updated Section 3: Application information: – added Section 3.4: Current sense and diagnostic Updated Section 4: Package and PC board thermal data: – added Figure 37.: PowerSSO-24 thermal impedance junction
ambient single pulse (one channel ON)
– added Table 15: Thermal parameters.
17-Mar-2009 3 Changed Table 16: PowerSSO-24 mechanical data
max value from 300 µs to 250 µs
, I
and td_vol parameters
L(off2)f
OUT/ISENSE
vs I
OUT
.
CC
<18V):
Table 16: PowerSSO-24 mechanical data:
22-Jun-2009 4
– Changed L (min) value from 6 to 0.55 – Changed L (max) value from 1 to 0.85
22-Jul-2009 5 Updated Figure 39: PowerSSO-24 package dimensions.
26-Oct-2010 6
Table 5: Power section:
–V
: updated minimum value
USD
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VNQ5E050AK-E
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