The VNL5050N3-E and VNL5050S5-E are
monolithic devices made using
STMicroelectronics VIPower Technology,
intended for driving resistive or inductive loads
with one side connected to the battery. Built-in
thermal shutdown protects the chip from
overtemperature and short-circuit. Output current
limitation protects the devices in an overload
condition. In case of long duration overload, the
device limits the dissipated power to a safe level
up to thermal shutdown intervention.Thermal
shutdown, with automatic restart, allows the
device to recover normal operation as soon as a
fault condition disappears. Fast demagnetization
of inductive loads is achieved at turn-off.
VNL5050N3-E / VNL5050S5-EBlock diagrams and pins configurations
1 Block diagrams and pins configurations
Figure 1.VNL5050N3-E block diagram
Drain
Control & DiagnosticLOGIC
IN
DRIVER
(ACTIVE POWER LIMITATION)
Figure 2.VNL5050S5-E block diagram
SUPPLY
SUPPLY
LOGIC
Control & Diagnostic
OFF State
Open load
Current
Limitation
OVERTEMPERATURE
PROTECTION
OVERLOAD PROTECTION
Power
Clamp
GND
Drain
IN
ST
Current
Limitation
DRIVER
OVERTEMPERATURE
PROTECTION
OVERLOAD PROTECTION
(ACTIVE POWER LIMITATION)
Power
Clamp
GND
Doc ID 15917 Rev 45/32
Page 6
Block diagrams and pins configurationsVNL5050N3-E / VNL5050S5-E
Table 2.Pin function
NameFunction
INPUT
Voltage controlled input pin with hysteresis, CMOS compatible. Controls output
switch state
(1)
DRAINPower MOS drain
SOURCEPower MOS source and ground reference for the control section
SUPPLY
VOLTAGE
STATUSOpen drain digital diagnostic pin
1. Internally connected to V
2. Valid for VNL5050S5-E only.
Supply voltage connected to the signal part (5 V)
(2)
in the VNL5050N3-E
supply
Figure 3.VNL5050N3-E current and voltage conventions
Figure 4.VNL5050S5-E current and voltage conventions
6/32Doc ID 15917 Rev 4
Page 7
VNL5050N3-E / VNL5050S5-EBlock diagrams and pins configurations
Figure 5.Configuration diagrams (top view)
SOT-223
Table 3.Suggested connections for unused and n.c. pins
SO-8
Connection / pinSTATUSN.C.INPUT
FloatingXXX
To groundNot allowedXThrough 10 kΩ resistor
Doc ID 15917 Rev 47/32
Page 8
Absolute maximum ratingVNL5050N3-E / VNL5050S5-E
2 Absolute maximum rating
Stressing the device above the rating listed in the Ta bl e 4 may cause permanent damage to
the device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Refer also to the STMicroelectronics SURE program and other relevant quality
document
2.1 Absolute maximum ratings
Table 4.Absolute maximum ratings
Val ue
SymbolParameter
SOT-223SO-8
Unit
V
- I
I
STAT
Drain-source voltage (V
DS
DC drain currentInternally limitedA
I
D
Reverse DC drain current-4A
D
DC supply current--1 to 10 mA
I
S
DC input current-1 to 10mA
I
IN
DC status current--1 to 10 mA
Electrostatic discharge
V
ESD1
(R = 1.5 kΩ; C = 100 pF)
– DRAIN
– SUPPLY, INPUT, STATUS
V
T
E
ESD2
Electrostatic discharge on output pin only
(R = 330 Ω, C = 150 pF)
Junction operating temperature-40 to 150°C
T
j
Storage temperature-55 to 150°C
stg
Single pulse avalanche energy
AS
(L = 1.1 mH, TJ= 150 °C, RL=0, I
2.2 Thermal data
= 0 V)Internally clampedV
IN
5000
4000
2000V
OUT
= I
limL
)
93mJ
V
Table 5.Thermal data
SymbolParameter
R
thj-amb
1. When mounted on a standard single-sided FR4 board with 0.5 cm2 of Cu (at least 35 µm thick) connected
to all DRAIN pins
. The value of these resistors is a compromise between the leakage current of
prot
microcontroller and the current required by the LSD I/Os (input levels compatibility) with the
latch-up limit of microcontroller I/Os:
Equation 1
70
.
I
latchup
Let:
●I
●V
●35 Ω ≤ R
Then, the recommended value is R
latchup
OHµC
> 20 mA
> 4.5 V
≤ 100 KΩ
prot
prot
Figure 18 shows the turn-off current drawn during the demagnetization.
Figure 18. Maximum demagnetization energy
I (A )
) in line to prevent the microcontroller I/O pins from
VV
−
R
prot
≤≤
μ
I
IHCOH
maxIH
= 10 KΩ
(1)
100
A
10
1
110100
A: VNL5050x - Single pulse
B: Repetitive pulse T
C: Repetitive pulse T
1. The voltage supply is V
= 13.5 V
CC
= 100 °C
J
= 125 °C
J
B
C
L (mH)
a. In case of negative transient on the drain pin
Doc ID 15917 Rev 417/32
Page 18
Package and PC board thermal dataVNL5050N3-E / VNL5050S5-E
4 Package and PC board thermal data
4.1 SOT-223 thermal data
Figure 19. SOT-223 PC board
1. Layout condition of R
Cu thickness = 35 µm, copper areas: from minimum pad lay-out to 0.8 cm2).
Figure 20.
RTHjamb (°C/W)
RTHjamb (°C/W)
150
150
140
140
R
thj-amb
RTHj_amb(°C/W)
RTHj_amb(°C/W)
and Zth measurements (PCB FR4 area = 30 mm x 58 mm, PCB thickness = 2 mm,
th
vs. PCB copper area in open box free air condition
footprint
footprint
(1)
130
130
120
120
110
110
100
100
90
90
80
80
70
70
60
60
00.511.522.5
00.511.522.5
PCB Cu heatsinkarea (cm2)
PCB Cu heatsink area (cm2)
18/32Doc ID 15917 Rev 4
Page 19
VNL5050N3-E / VNL5050S5-EPackage and PC board thermal data
Figure 21. SOT-223 thermal impedance junction ambient single pulse
ZTH (°C/W)
1000
Cu footprint
100
10
1
0.1
0.00010.0010.010.11101001000
Cu=2 cm2
Time (s)
Equation 2: pulse calculation formula
Z
THδ
δZ
R
TH
THtp
1 δ–()+⋅=
where δ = tP/T
Figure 22. Thermal fitting model of a LSD in SOT-223
1. The fitting model is a semplified thermal tool and is valid for transient evolutions where the embedded
protections (power limitation or thermal cycling during thermal shutdown) are not triggered.
(1)
Doc ID 15917 Rev 419/32
Page 20
Package and PC board thermal dataVNL5050N3-E / VNL5050S5-E
Table 16.Thermal parameters
Area/island (cm2)Footprint2
R1 (°C/W)0.4
R2 (°C/W)0.8
R3 (°C/W)4.5
R4 (°C/W)24
R5 (°C/W)0.1
R6 (°C/W)11545
C1 (W.s/°C)0.00006
C2 (W.s/°C)0.0005
C3 (W.s/°C)0.03
C4 (W.s/°C)0.16
C5 (W.s/°C)1000
C6 (W.s/°C)0.42
20/32Doc ID 15917 Rev 4
Page 21
VNL5050N3-E / VNL5050S5-EPackage and PC board thermal data
4.2 SO-8 thermal data
Figure 23. SO-8 PC board
1. Layout condition of R
Cu thickness = 35 µm (front and back side), Copper areas: from minimum pad lay-out to 2 cm
Figure 24.
105
105
95
95
R
thj-amb
RTHjamb (°C/W)
RTHjamb (°C/W)
RTHj_amb(°C/W)
RTHj_amb(°C/W)
and Zth measurements (PCB FR4 area = 58 mm x 58 mm, PCB thickness = 2 mm,
th
vs. PCB copper area in open box free air condition
footprint
footprint
(1)
2
).
85
85
75
75
65
65
00.511.522.5
00.511.522.5
PCB Cu heatsinkarea (cm2)
PCB Cu heatsink area (cm2)
Doc ID 15917 Rev 421/32
Page 22
Package and PC board thermal dataVNL5050N3-E / VNL5050S5-E
Figure 25. SO-8 thermal impedance junction ambient single pulse
ZTH (°C/W)
1000
Cu=footprint
100
Cu=2 cm2
10
1
0.1
0.00010.0010.010.11101001000
Time (s)
Equation 3: pulse calculation formula
Z
THδ
δZ
R
TH
THtp
1 δ–()+⋅=
where δ = tP/T
Figure 26. Thermal fitting model of a LSD in SO-8
(1)
1. The fitting model is a semplified thermal tool and is valid for transient evolutions where the embedded
protections (power limitation or thermal cycling during thermal shutdown) are not triggered.
22/32Doc ID 15917 Rev 4
Page 23
VNL5050N3-E / VNL5050S5-EPackage and PC board thermal data
Table 17.Thermal parameters
Area/island (cm2)Footprint2
R1 (°C/W)0.4
R2 (°C/W)2.4
R3 (°C/W)3.5
R4 (°C/W)21
R5 (°C/W)16
R6 (°C/W)5828
C1 (W.s/°C)0.00008
C2 (W.s/°C)0.0016
C3 (W.s/°C)0.0075
C4 (W.s/°C)0.045
C5 (W.s/°C)0.35
C6 (W.s/°C)1.052
Doc ID 15917 Rev 423/32
Page 24
Package and packing informationVNL5050N3-E / VNL5050S5-E
5 Package and packing information
5.1 ECOPACK
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com
ECOPACK
®
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
5.2 SOT-223 mechanical data
Figure 27. SOT-223 package dimensions
.
24/32Doc ID 15917 Rev 4
0046067
Page 25
VNL5050N3-E / VNL5050S5-EPackage and packing information
Table 18.SOT-223 mechanical data
mm.inch
DIM.
Min.Typ.Max.Min.Typ.Max.
A1.80.071
B0.60.70.850.0240.0270.033
B12.933.150.1140.1180.124
c0.240.260.350.0090.010.014
D6.36.56.70.2480.2560.264
e2.30.09
e14.60.181
E3.33.53.70.130.1380.146
H6.777.30.2640.2760.287
V10 (max)
A10.020.10.00080.004
Doc ID 15917 Rev 425/32
Page 26
Package and packing informationVNL5050N3-E / VNL5050S5-E
5.3 SO-8 mechanical data
Figure 28. SO-8 package dimensions
26/32Doc ID 15917 Rev 4
Page 27
VNL5050N3-E / VNL5050S5-EPackage and packing information
Table 19.SO-8 mechanical data
Symbol
Min.Typ.Max.
A1.75
A10.100.25
A21.25
b0.280.48
c0.170.23
(1)
D
4.804.905.00
E5.806.006.20
E1
(2)
3.803.904.00
e1.27
h0.250.50
L0.401.27
Millimeters
L11.04
k0°8°
ccc0.10
1. Dimensions D does not include mold flash, protrusions or gate burrs. Mold flash, potrusions or gate burrs
shall not exceed 0.15 mm in total (both side).
2. Dimension “E1” does not include interlead flash or protrusions. Interlead flash or protrusions shall not
exceed 0.25 mm per side.
Doc ID 15917 Rev 427/32
Page 28
Package and packing informationVNL5050N3-E / VNL5050S5-E
5.4 SOT-223 packing information
The devices can be packed in tube or tape and reel shipments (see the Table 1: Devices
summary on page 1 ).
Figure 29. SOT-223 tape and reel shipment (suffix “TR”)
Reel dimensions
Base Q.ty1000
Bulk Q.ty1000
A (max)330
B (min)1.5
C (± 0.2)13
F20.2
G (+ 2 / -0)12.4
N (min)60
T (max)18.4
Tape dimensions
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
Added Table 18: SOT-223 mechanical data
Deleted table 26: SO-8 mechanical data & package outline
Added Figure 28: SO-8 package dimensions
Added Table 19: SO-8 mechanical data
Updated corporate template from V3 to V3-1
Deleted row for R
in Table 5: Thermal data
thj-case
Changed the document title
Took the first line off the bullet list for Features on cover page
Table 4: Absolute maximum ratings
–EAS: added new row
Table 6: Power MOS section
–V
: added new row
supply
–RON: updated test conditions
Table 8: Input section.
: updated test conditions
–I
SS
– Updated the table footnote
Table 13: Switching characteristics
– Moved footnote 2 and changed its text
: changed typ value
–W
ON
–W
: changed typ value
OFF
Table 14: Protection and diagnostics
: updated test conditions
–I
limH
: updated test conditions
–I
limL
: changed typ value
–t
dlimL
Updated Figure 7: Static drain source on-resistance vs. drain current
Updated Figure 8: Static drain source on-resistance vs. input voltage
Updated Figure 9: Static drain source on-resistance vs. drain current
Updated Figure 10: Transfer characteristics
Added Figure 11: Transfer characteristics (inside view for VIN = 2 V
to 3 V)
Updated Figure 14: Normalized input threshold vs. temperature
Added Section 3.2: MCU I/O protection
Doc ID 15917 Rev 431/32
Page 32
VNL5050N3-E / VNL5050S5-E
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