1. Per channel with all the output pins connected to the
PCB.
)I
DS(on
OUT
(1)
V
CC
36 V
VND920
■ CMOS compatible input
■ Proportional load current sense
■ Shorted load protection
■ Undervoltage and overvoltage shutdown
■ Overvoltage clamp
■ Thermal shutdown
■ Current limitation
■ Protection against loss of ground and loss of
V
CC
■
Very low standby power dissipation
■ Reverse battery protected
Table 1.Device summary
SO-28 (double island)
Description
The VND920 is a double chip device designed in
STMicroelectronics™ VIPower™ M0-3
technology. The VND920 is intended for driving
any type of load with one side connected to
ground. The active V
protects the device against low energy spikes
(see ISO7637 transient compatibility table). Active
current limitation combined with thermal
shutdown and automatic restart protects the
device against overload.
The device integrates an analog current sense
output which delivers a current proportional to the
load current. The device automatically turns off in
the case where the ground pin becomes
disconnected.
Table 2.Suggested connections for unused and not connected pins
Connection / pinCurrent SenseN.C.OutputInput
FloatingXXX
14
28
15
V
OUTPUT 1
OUTPUT 1
OUTPUT 1
OUTPUT 1
OUTPUT 1
OUTPUT 1
OUTPUT 2
OUTPUT 2
OUTPUT 2
OUTPUT 2
OUTPUT 2
OUTPUT 2
V
CC
CC
1
2
To ground
Through 1KΩ
resistor
X
Through 10KΩ
resistor
6/26Doc ID 7767 Rev 5
Page 7
VND920Electrical specifications
2 Electrical specifications
Figure 3.Current and voltage conventions
I
S1
V
CC1
I
Note:V
Fn
= V
CCn
- V
IN1
V
IN1
I
IN2
V
IN2
during reverse battery condition.
OUTn
INPUT1
INPUT2
GROUND1
2.1 Absolute maximum ratings
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to Absolute maximum rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics sure
program and other relevant quality document.
Table 3.Absolute maximum ratings
I
GND1
V
CC2
OUTPUT1
OUTPUT2
GROUND2
V
CC1
CURRENT SENSE 1
CURRENT SENSE 2
I
GND2
I
OUT1
I
SENSE1
I
OUT2
I
SENSE2
V
SENSE2
V
V
V
OUT2
I
S2
(*)
F1
SENSE1
V
OUT1
V
CC2
SymbolParameterValueUnit
V
-V
-I
I
OUT
-I
OUT
I
V
CSENSE
CC
gnd
IN
DC supply voltage41V
Reverse DC supply voltage- 0.3V
CC
DC reverse ground pin current- 200mA
DC output currentInternally limitedA
Reverse DC output current - 21A
DC input current+/- 10mA
Current sense maximum voltage
- 3
+ 15
V
V
Electrostatic discharge
(human body model: R = 1.5 KΩ; C=100pF)
1. When mounted on a standard single-sided FR-4 board with 1cm2 of Cu (at least 35 µm thick) connected to
all VCC pins. Horizontal mounting and no artificial air flow.
2. When mounted on a standard single-sided FR-4 board with 6cm2 of Cu (at least 35 µm thick) connected to
all VCC pins. Horizontal mounting and no artificial air flow.
Values specified in this section are for 8 V < VCC<36V; -40 °C < Tj< 150 °C, unless
otherwise stated.
Tabl e 5.Powe r
SymbolParameterTest conditionsMin.Typ.Max. Unit
V
V
USD
V
R
V
CLAMP
I
L(off1)
I
L(off2)
I
L(off3)
I
L(off4)
Operating supply voltage5.51336V
CC
Undervoltage shutdown345.5V
Overvoltage shutdown36V
OV
I
=10A; Tj= 25 °C; 16mΩ
OUT
On-state resistance
ON
=10A; 32mΩ
I
OUT
=3A; VCC=6V55mΩ
I
OUT
Clamp voltageICC=20mA414855V
I
Supply current
S
Off-state output currentVIN=V
Off-state output currentVIN=0V; V
Off-state output current
Off-state output current
Off-state; V
V
IN=VOUT
Off-state; V
VIN=V
On-state; V
I
=0A; R
OUT
V
IN=VOUT
Tj=125°C
V
IN=VOUT
Tj=25°C
=13V;
CC
=0V
=13V;
CC
=0V; Tj= 25 °C
OUT
=13V; VIN=5V;
CC
= 0 V050µA
OUT
OUT
=3.9kΩ
SENSE
=3.5V-750µA
1025µA
1020µA
=0V; VCC=13V;
=0V; VCC=13V;
5mA
5µA
3µA
Note:V
and VOV are correlated. Typical difference is 5V.
CLAMP
Table 6.Switching (VCC=13V)
SymbolParameterTest conditionsMin.Typ.Max. Unit
t
d(on)
t
d(off)
dV
OUT
dV
OUT
Tabl e 7.VCC output diode
Turn-on delay time RL=1.3Ω (see Figure 4)50µs
Turn-off delay time RL=1.3Ω (see Figure 4)50µs
/dt
Turn-on voltage slope RL=1.3Ω (see Figure 4)See Figure 10V/µs
(on)
/dt
Turn-off voltage slope RL=1.3Ω (see Figure 4)See Figure 12V/µs
(off)
SymbolParameterTest conditionsMin.Typ.Max. Unit
V
F
Forward on voltage-I
=5A; Tj= 150 °C0.6V
OUT
Doc ID 7767 Rev 59/26
Page 10
Electrical specificationsVND920
Table 8.Logic inputs
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
V
V
I(hyst)
V
Table 9.Current sense (9 V ≤ VCC≤ 16 V)
Input low-level voltage1.25V
IL
Low-level input currentVIN=1.25V1µA
I
IL
Input high-level voltage3.25V
IH
I
High-level input currentVIN= 3.25 V10µA
IH
Input hysteresis voltage0.5V
I
=1mA66.88V
Input clamp voltage
ICL
IN
I
=-1mA-0.7V
IN
SymbolParameterTest conditionsMin.Typ.Max.Unit
I
K
1
dK1/K
K
2
dK
2/K2
K
3
I
OUT/ISENSE
Current sense
1
ratio drift
I
OUT/ISENSE
Current sense
ratio drift
I
OUT/ISENSE
=1A; V
OUT
Tj= -40 °C...150 °C
I
=1A; V
OUT
Tj= -40 °C...150 °C
I
= 10 A; V
OUT
Tj= -40 °C;
Tj= 25°C...150°C
= 10A; V
I
OUT
= -40 °C...150 °C
T
j
I
= 30 A; V
OUT
= -40 °C
T
j
Tj = 25 °C...150 °C
SENSE
SENSE
SENSE
SENSE
SENSE
=0.5V;
=0.5V;
= 4 V;
= 4V;
= 4 V;
3300 44006000
-10+10%
4200
4900
6000
4400
4900
5750
-8+8%
4200
4900
5500
4400
4900
5250
= 30 A; V
dK
3/K3
I
SENSE0
V
SENSE
Current sense
ratio drift
Analog sense
current
Max analog
sense output
voltage
I
OUT
= -40 °C...150 °C
T
j
= 6...16 V; I
V
CC
V
T
V
R
V
R
= 0 V;
SENSE
= -40 °C...150 °C
j
= 5.5 V; I
CC
= 10 kΩ
SENSE
> 8 V, I
CC
SENSE
OUT
= 10 kΩ
SENSE
OUT
OUT
= 10 A;
= 5 A;
Sense voltage in
V
SENSEH
overtemperature
V
CC
= 13 V; R
SENSE
condition
10/26Doc ID 7767 Rev 5
= 4 V;
-6+6%
= 0 A;
010µA
2V
4V
= 3.9 kΩ5.5V
Page 11
VND920Electrical specifications
Table 9.Current sense (9 V ≤ VCC≤ 16 V) (continued)
SymbolParameterTest conditionsMin.Typ.Max.Unit
Analog sense
output
R
VSENSEH
impedance in
overtemperature
condition
t
DSENSE
1. Current sense signal delay after positive input slope.
Table 10.Protections
Current sense
delay response
(1)
SymbolParameterTest conditionsMin.Typ.Max.Unit
= 13 V; Tj > T
V
CC
To 9 0 % I
SENSE
; output open400Ω
TSD
(1)
500µs
T
TSD
T
T
hyst
I
lim
V
demag
V
1. To ensure long term reliability under heavy over-load or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device operates under
abnormal conditions this software must limit the duration and number of activation cycles.
Table 11.Truth table
Shutdown temperature150175200°C
Reset temperature135°C
R
Thermal hysteresis715°C
V
= 13 V304575A
Current limitation
Turn-off output clamp
voltage
Output voltage drop
ON
limitation
CC
5V < V
I
OUT
< 36 V75A
CC
=2A; VIN=0V;
L=6mH
I
=1A;
OUT
Tj = -40 °C...150 °C
V
CC
- 41 V
- 48 V
CC
50mV
CC
- 55V
ConditionsInputOutputSense
Normal operation
Over-temperature
Under-voltage
Over-voltage
Short circuit to GND
Short circuit to V
CC
L
H
L
H
L
H
L
H
L
H
H
L
H
L
H
L
L
L
L
L
L
L
L
L
(T
H
H
Nominal
V
SENSEH
(T
j<TTSD
j>TTSD
< Nominal
0
0
0
0
0
0
0
) V
0
SENSEH
Negative output voltage clampLL0
) 0
Doc ID 7767 Rev 511/26
Page 12
Electrical specificationsVND920
Table 12.Electrical transient requirements
ISO T/R
Test level
7637/1
Test pulse
1- 25V
2+ 25V
3a- 25V
3b+ 25V
4- 4V
5+ 26.5V
1. All functions of the device are performed as designed after exposure to disturbance.
2. One or more functions of the device is not performed as designed after exposure and cannot be returned to
proper operation without replacing the device.
IIIIIIIVDelays and impedance
(1)
(1)
(1)
(1)
(1)
(1)
- 50V
+ 50V
- 50V
+ 50V
- 5V
+ 46.5V
(1)
(1)
(1)
(1)
(1)
(2)
- 75V
+ 75V
- 100V
+ 75V
(1)
- 6V
+ 66.5V
(1)
(1)
(1)
(1)
(2)
- 100V
+ 100V
- 150V
+ 100V
- 7V
+ 86.5V
(1)
(1)
(1)
(1)
(1)
(2)
2ms, 10Ω
0.2ms, 10Ω
0.1µs, 50Ω
0.1µs, 50Ω
100ms, 0.01Ω
400ms, 2Ω
Figure 4.Switching characteristics
V
OUT
90%
t
f
dV
OUT
/dt
(off)
t
dV
I
SENSE
OUT
80%
/dt
(on)
t
90%
r
10%
t
t
d(on)
DSENSE
INPUT
12/26Doc ID 7767 Rev 5
t
d(off)
t
t
Page 13
VND920Electrical specifications
Figure 5.I
I
OUT/ISENSE
6500
6500
6000
6000
5500
5500
5000
5000
4500
4500
4000
4000
3500
3500
3000
3000
OUT/ISENSE
versus I
OUT
max.Tj=-40°C
max.Tj=25...150°C
min.Tj=25...150°C
typical value
min.Tj=-40°C
02468101214161820222426283032
I
(A)
OUT
Doc ID 7767 Rev 513/26
Page 14
Electrical specificationsVND920
Figure 6.Waveforms
NORMAL OPERATION
INPUT
LOAD CURRENT
SENSE
UNDERVOLTAGE
V
CC
INPUT
LOAD CURRENT
SENSE
V
CC
INPUT
LOAD CURRENT
SENSE
V
USD
V
VCC > V
OV
USD
V
USDhyst
OVERVOLTAGE
V
OVhyst
INPUT
LOAD CURRENT
LOAD VOLTAGE
SENSE
INPUT
LOAD VOLTAGE
LOAD CURRENT
SENSE
T
j
INPUT
LOAD CURRENT
SENSE
SHORT TO GROUND
SHORT TO V
<Nominal
T
TSD
T
R
OVERTEMPERATURE
CC
<Nominal
I
SENSE
=
V
SENSEH
R
SENSE
14/26Doc ID 7767 Rev 5
Page 15
VND920Electrical specifications
2.4 Electrical characteristics curves
Figure 7.Off-state output currentFigure 8.High-level input current
IL(off1) (uA)
9
8
7
6
5
4
3
2
1
0
-50 -2502 55075 100 125 150 175
Tc (°C)
Iih (uA)
5
4.5
3.5
2.5
1.5
0.5
Vin=3.25V
4
3
2
1
0
-50 -250255075 100 125 150 175
Tc (°C)
Figure 9.Input clamp voltageFigure 10. Turn-on voltage slope
Vicl (V)
10
9.5
9
8.5
8
7.5
7
6.5
6
5.5
5
Iin=1mA
-50 -250255075 100 125 150 175
Tc ( °C )
dVout/dt(on) (V/ms)
700
650
600
550
500
450
400
350
300
250
-50 -250255075 100 125 150 175
Vcc=13V
Rl=1.3Ohm
Tc (ºC)
Figure 11. Over-voltage shutdownFigure 12. Turn-off voltage slope
Vov (V)
50
48
46
44
42
40
38
36
34
32
30
-50 -250255075 100 125 150 175
Tc (°C)
Doc ID 7767 Rev 515/26
dVout/dt(off) (V/ms)
550
500
450
400
350
300
250
200
150
100
50
Vcc=13V
Rl=1.3Ohm
0
-50 -250255075100 125 150 175
Tc (°C)
Page 16
Electrical specificationsVND920
Figure 13. I
Ilim (A)
100
90
80
70
60
50
40
30
20
10
0
-50 -250255075 100 125 150 175
vs T
LIM
Vcc=13V
case
Tc (°C)
Figure 14. On-state resistance vs V
Ron (mOhm)
50
45
40
35
30
25
20
15
10
5
0
5 10152025303540
Tc= 150ºC
Tc= 25ºC
Tc= - 40ºC
Vcc (V)
Figure 15. Input high-levelFigure 16. Input hysteresis voltage
Vih (V)
3.6
3.4
3.2
3
2.8
2.6
2.4
2.2
2
-50 -250255075 100 125 150 175
Tc (°C)
Vhyst (V)
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
-50 -250255075 100 125 150 175
Tc (°C)
CC
Figure 17. On-state resistance vs TcaseFigure 18. Input low-level
Ron (mOhm)
50
45
40
35
30
25
20
15
10
5
0
-50 -250255075 100 12 5 150 175
Iout=10A
Vcc=8V; 36V
Tc (ºC)
16/26Doc ID 7767 Rev 5
Vil (V)
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
-50 -2502 55075 100 125 150 175
Tc (°C)
Page 17
VND920Application information
3 Application information
Figure 19. Application schematic
+5V
R
prot
R
prot
R
prot
INPUT1
C. SENSE 1
INPUT2
V
CC1
V
CC2
OUTPUT1
D
ld
μC
R
R
SENSE1,2
prot
C. SENSE 2
GND1
V
GND
R
GND
GND2
OUTPUT2
D
GND
3.1 GND protection network against reverse battery
3.1.1 Solution 1: resistor in the ground line (R
This can be used with any type of load.
The following is an indication on how to dimension the R
1.R
2. R
where - I
maximum rating section of the device datasheet.
≤ 600 mV / (I
GND
≥ (-VCC) / (-I
GND
is the DC reverse ground pin current and can be found in the absolute
GND
S(on)max
GND
).
)
GND
only)
resistor.
GND
Power Dissipation in R
P
= (-VCC)2/ R
D
GND
GND
(when V
< 0: during reverse battery situations) is:
CC
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I
S(on)max
becomes the sum of the
maximum on-state currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground then the
R
will produce a shift (I
GND
S(on)max
* R
) in the input thresholds and the status output
GND
values. This shift will vary depending on how many devices are ON in the case of several
high-side drivers sharing the same R
GND
.
If the calculated power dissipation leads to a large resistor or several devices have to share
the same resistor then ST suggests to utilize Solution 2 (see below).
Doc ID 7767 Rev 517/26
Page 18
Application informationVND920
3.1.2 Solution 2: diode (D
A resistor (R
= 1 kΩ) should be inserted in parallel to D
GND
) in the ground line
GND
inductive load.
This small signal diode can be safely shared amongst several different HSDs. Also in this
case, the presence of the ground network will produce a shift (≈600 mV) in the input
threshold and in the status output values if the microprocessor ground is not common to the
device ground. This shift will not vary if more than one HSD shares the same diode/resistor
network.
Series resistor in INPUT and STATUS lines are also required to prevent that, during battery
voltage transient, the current exceeds the absolute maximum rating.
Safest configuration for unused INPUT and STATUS pin is to leave them unconnected.
3.2 Load dump protection
Dld is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds the
V
max DC rating. The same applies if the device is subject to transients on the VCC line
CC
that are greater than the ones shown in the ISO 7637-2: 2004(E) table.
3.3 MCU I/Os protection
If a ground protection network is used and negative transient are present on the VCC line,
the control pins will be pulled negative. ST suggests to insert a resistor (R
prevent the microcontroller I/O pins to latch-up.
if the device drives an
GND
prot
) in line to
The value of these resistors is a compromise between the leakage current of microcontroller
and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of
microcontroller I/Os.
-V
CCpeak/Ilatchup
≤ R
prot
≤ (V
OHµC-VIH-VGND
) / I
IHmax
Calculation example:
For V
CCpeak
5kΩ ≤ R
Recommended values: R
= -100V and I
≤ 65 kΩ.
prot
latchup
=10kΩ .
prot
≥ 20 mA; V
OHµC
≥ 4.5 V
18/26Doc ID 7767 Rev 5
Page 19
VND920Application information
I
3.4 Maximum demagnetization energy (VCC = 13.5V)
Figure 20. Maximum turn-off current versus inductance
LMAX (A)
100
A
B
10
C
1
0.010.1110100
L(mH)
9
A: T
B: T
C: T
,
,1
= 150°C single pulse
jstart
= 100°C repetitive pulse
jstart
= 125°C repetitive pulse
jstart
/
'HPDJQHWL]DWLRQ'HPDJQHWL]DWLRQ'HPDJQHWL]DWLRQ
W
*$3*&)7
Note:Values are generated with R
demagnetization) of every pulse must not exceed the temperature specified above for
curves A and B.
=0 Ω.In case of repetitive pulses, T
L
(at beginning of each
jstart
Doc ID 7767 Rev 519/26
Page 20
Package and PCB thermal dataVND920
4 Package and PCB thermal data
4.1 SO-28 thermal data
Figure 21. SO-28 PC board
Note:Layout condition of R
and Zth measurements (PCB FR4 area = 58 mm x 58 mm,
th
PCB thickness = 2 mm, Cu thickness = 35 µm, Copper areas: 0.5 cm
Table 13.Thermal calculation according to the PCB heatsink area
Chip 1 Chip 2T
ONOFFR
OFFONR
ONONR
ONON(R
jchip1
thAxPdchip1+Tamb
thCxPdchip2+Tamb
x(P
thB
dchip1+Pdchip2
thAxPdchip1
R
= Thermal resistance Junction to Ambient with one chip ON
thA
R
= Thermal resistance Junction to Ambient with both chips ON and P
thB
R
= Mutual thermal resistance
thC
)+R
)+T
amb
thCxPdchip2+Tamb(RthAxPdchip2
R
thCxPdchip1+Tamb
R
thAxPdchip2+Tamb
R
x(P
thB
T
jchip2
dchip1+Pdchip2
)+R
thCxPdchip1+TambPdchip1
)+T
2
, 3 cm2, 6 cm2).
amb
dchip1=Pdchip2
Note
P
dchip1=Pdchip2
≠ P
dchip2
20/26Doc ID 7767 Rev 5
Page 21
VND920Package and PCB thermal data
Figure 22. R
RTHj_am b
(°C/W)
70
60
50
40
30
20
10
01234567
vs PCB copper area in open box free air condition
thj-amb
PCB Cu heats ink area (cm ^2)/island
R
R
R
thA
thB
thC
Figure 23. Thermal impedance junction ambient single pulse
Zth(°C /W )
100
10
1
0.1
0.01
0.00010.0010.010.11101001000
time(s)
0,5 cm ^2/island
3 cm ^2/island
6 cm ^2/island
One channel ON
Tw o channels ON
Doc ID 7767 Rev 521/26
Page 22
Package and PCB thermal dataVND920
Equation 1pulse calculation formula
Z
where
THδ
RTHδ Z
δtpT⁄=
THtp
1 δ–()+⋅=
Figure 24. Thermal fitting model of a double channel HSD in SO-28
Tj_1
Pd1
Tj_2
Table 14.Thermal parameters
C1
C1C2
R1
Pd2
R2
C3C4
R3R1R6R5R2
T_amb
C5C6C2
R4
Area/island (cm2)0.56
R1 (°C/W)0.02
R2 (°C/W)0.1
R3 (°C/W)2.2
R4 (°C/W)11
R5 (°C/W)15
R6 (°C/W)3013
C1 (W.s/°C)0.0015
C2 (W.s/°C)7.00E - 03
C3 (W.s/°C)1.50E - 02
C4 (W.s/°C)0.2
C5 (W.s/°C)1.5
C6 (W.s/°C)58
22/26Doc ID 7767 Rev 5
Page 23
VND920Package and packing information
5 Package and packing information
5.1 ECOPACK® packages
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
Figure 25. SO-28 package dimensions
Table 15.SO-28 mechanical data
Millimeters
Symbol
Min.Typ.Max.
A2.65
a10.100.30
b0.350.49
b10.230.32
C0.50
c145° (typ.)
D17.718.1
E10.0010.65
e1.27
e316.51
F7.407.60
L0.401.27
S8° (max.)
Doc ID 7767 Rev 523/26
Page 24
Package and packing informationVND920
5.2 SO-28 packing information
Figure 26. SO-28 tube shipment (no suffix)
Base Q.ty28
Bulk Q.ty700
Tube length (± 0.5)532
A3.5
C
B
A
Figure 27. SO-28 tape and reel shipment (suffix “TR”)
B13.8
C (± 0.1)0.6
All dimensions are in mm.
Reel dimensions
Base Q.ty1000
Bulk Q.ty1000
A (max)330
B (min)1.5
C (± 0.2)13
F20.2
G (+ 2 / -0)16.4
N (min)60
T (max)22.4
Tape dimensions
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
Minor changes.
Current and voltage convention update (page 2).
Configuration diagram (top view) and suggested connections for
09-Sep-20042
03-May-20063Suggested connections for unused and n.c.pins correction.
17-Dec-20084
unused and n.c. pins insertion (page 2).
6 cm2 Cu condition insertion in thermal data table (page 3).
- output diode section update (page 4).
V
CC
Revision history table insertion (page 34).
Disclaimers update (page 35).
Document reformatted and restructured.
Added content, list of figures and tables.
®
Added ECOPACK
packages information.
28-Feb-20115
Updated following figures:
– Figure 13: ILIM vs Tcase
– Figure 22: Rthj-amb vs PCB copper area in open box free air
condition
Doc ID 7767 Rev 525/26
Page 26
VND920
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