Datasheet VND830SP-E Datasheet (ST)

Page 1
Features
Typ e R
VND830SP-E 60 mΩ
DS(on)
(1)
I
OUT
6A
(1)
V
CC
36 V
VND830SP-E
Double channel high-side driver
10
1. Per each channel.
■ ECOPACK
■ Automotive Grade: compliance with AEC
®
guidelines
■ Very low standby current
■ CMOS compatible input
■ On-state open-load detection
■ Off-state open-load detection
■ Thermal shutdown protection and diagnosis
■ Undervoltage shutdown
■ Overvoltage clamp
■ Output stuck to V
■ Load current limitation
■ Reverse battery protection
■ Electrostatic discharge protection
detection
CC

Table 1. Device summary

1
PowerSO-10
Description
The VND830SP-E is a monolithic device made by using STMicroelectronics™ VIPower™ M0-3 technology, intended for driving any kind of load with one side connected to ground.
Active V against low energy spikes (see ISO7637 transient compatibility table).
Active current limitation combined with thermal shutdown and automatic restart protects the device against overload. The device detects open-load condition both is on-state and off-state. Output shorted to V Device automatically turns-off in case of ground pin disconnection.
pin voltage clamp protects the device
CC
is detected in the off-state.
CC
Order codes
Package
Tube Tape and reel
PowerSO-10 VND830SP-E VND830SPTR-E
February 2011 Doc ID 10879 Rev 2 1/25
www.st.com
1
Page 2
VND830SP-E Contents
Contents
1 Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.4 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2.5 Maximum demagnetization energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3 Application schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.1 GND protection network against reverse battery . . . . . . . . . . . . . . . . . . . 18
3.1.1 Solution 1: a resistor in the ground line (RGND only) . . . . . . . . . . . . . . 18
3.1.2 Solution 2: a diode (D
3.2 Load dump protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.3 MCU I/O protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.4 Open-load detection in off-state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
) in the ground line . . . . . . . . . . . . . . . . . . . . 19
GND
4 Package and PCB thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
4.1 PowerSO-10 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
5 Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
5.1 ECOPACK® packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
5.2 PowerSO-10 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
5.3 PowerSO-10 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Doc ID 10879 Rev 2 2/28
Page 3
VND830SP-E List of tables
List of tables
Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table 2. Suggested connections for unused and not connected pins . . . . . . . . . . . . . . . . . . . . . . . . 5
Table 3. Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Table 4. Thermal data (per island) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 5. Power output. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 6. Protections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Table 7. V
Table 8. Status pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Table 9. Switching (V
Table 10. Open-load detection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Table 11. Logic input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Table 12. Truth table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Table 13. Electrical transient requirements on V Table 14. Electrical transient requirements on V Table 15. Electrical transient requirements on V
Table 16. Thermal parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Table 17. PowerSO-10 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Table 18. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
- output diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
CC
= 13 V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
CC
pin (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
CC
pin (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
CC
pin (part 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
CC
Doc ID 10879 Rev 2 3/28
Page 4
VND830SP-E List of figures
List of figures
Figure 1. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 2. Configuration diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 3. Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 4. Status timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 5. Switching time waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 6. Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 7. Off-state output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 8. High level input current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 9. Input clamp voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 10. Status leakage current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 11. Status low output voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 12. Status clamp voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 13. On-state resistance vs Figure 14. On-state resistance vs V
Figure 15. Open-load on-state detection threshold . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 16. Open-load off-state detection threshold . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 17. Input high level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 18. Input low level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 19. Input hysteresis voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 20. Overvoltage shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 21. Turn-on voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 22. Turn-off voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 23. I
LIM
vs T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
case
Figure 24. PowerSO-10 maximum turn-off current versus load inductance . . . . . . . . . . . . . . . . . . . . 17
Figure 25. Application schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 26. Open-load detection in off-state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 27. PowerSO-10 PC board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 28. Rthj-amb vs PCB copper area in open box free air condition . . . . . . . . . . . . . . . . . . . . . . 21
Figure 29. Thermal impedance junction ambient single pulse. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 30. Thermal fitting model of a double channel HSD in PowerSO-10 . . . . . . . . . . . . . . . . . . . . 22
Figure 31. PowerSO-10 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 32. PowerSO-10 suggested pad layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 33. PowerSO-10 tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 34. PowerSO-10 tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Tcase
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
CC
Doc ID 10879 Rev 2 4/28
Page 5
VND830SP-E Block diagram and pin description

1 Block diagram and pin description

Figure 1. Block diagram

V
cc
V
GND
INPUT1
STATUS1
INPUT2
STATUS2
cc
CLAMP
OVERT EMP. 1
OVERT EMP. 2
LOGIC
OVERVOLTAGE
UNDERVOLTAGE
CLAMP 1
DRIVER 1
CURRENT LIMITER 1
OPEN-LOAD ON 1
OPEN-LOAD OFF 1
CLAMP 2
DRIVER 2
CURRENT LIMITER 2
OPEN-LOAD ON 2
OPEN-LOAD OFF 2
OUTPUT1
OUTPUT2

Figure 2. Configuration diagram (top view)

GROUND INPUT 1 STATUS 1 STATUS 2 INPUT 2
10
6 7
8 9
5 4 3
2
1
OUTPUT 1 OUTPUT 1 N.C. OUTPUT 2 OUTPUT 2
11
V
CC

Table 2. Suggested connections for unused and not connected pins

Connection / pin Status N.C. Output Input
Floating X X X X
To ground — X —
Through 10 KΩ
resistor
Doc ID 10879 Rev 2 5/28
Page 6
VND830SP-E Electrical specifications

2 Electrical specifications

2.1 Absolute maximum ratings

Stressing the device above the rating listed in Ta bl e 3 may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality document.

Table 3. Absolute maximum ratings

Symbol Parameter Value Unit
V
-V
-I
I
OUT
-I
I
STAT
V
E
P
T
CC
CC
GND
OUT
I
IN
ESD
MAX
tot
T
j
T
c
stg
DC supply voltage 41 V
Reverse DC supply voltage -0.3 V
DC reverse ground pin current -200 mA
DC output current Internally limited A
Reverse DC output current -6 A
DC input current +/-10 mA
DC status current +/-10 mA
Electrostatic discharge (Human Body Model: R = 1.5 KΩ; C=100pF)
–INPUT –STATUS –OUTPUT –V
CC
4000 4000 5000 5000
V V V V
Maximum switching energy (L = 1.8 mH; R
=9A)
I
L
=0Ω; V
L
=13.5V; T
bat
jstart
= 150 °C;
100 mJ
Power dissipation TC=25°C 73.5 W
Junction operating temperature Internally limited °C
Case operating temperature -40 to 150 °C
Storage temperature -55 to 150 °C
Doc ID 10879 Rev 2 6/28
Page 7
VND830SP-E Electrical specifications

2.2 Thermal data

Table 4. Thermal data (per island)

Symbol Parameter Value Unit
R
thj-case
R
thj-amb
1. When mounted on a standard single-sided FR-4 board with 0.5 cm2 of Cu (at least 35 µm thick). Horizontal mounting and no artificial air flow.
2. When mounted on a standard single-sided FR-4 board with 6 cm artificial air flow.
Thermal resistance junction-case 1.7 °C/W
Thermal resistance junction-ambient 51.7
2
of Cu (at least 35 µm thick). Horizontal mounting and no
(1)
37
(2)
°C/W

2.3 Electrical characteristics

Values specified in this section are for 8 V < V otherwise stated.
(Per each channel)

Figure 3. Current and voltage conventions

I
IN1
INPUT 1
I
V
IN1
STAT1
STATUS 1
V
STAT1
I
IN2
INPUT 2
I
V
STAT2
IN2
STATUS 2
V
STAT2
< 36 V; -40 °C < Tj < 150 °C, unless
CC
(1)
V
F1
V
CC
I
OUT1
OUTPUT 1
V
OUT1
I
OUT2
OUTPUT 2
V
OUT2
GND
I
GND
I
S
V
CC
1. VFn = V

Table 5. Power output

CCn
- V
during reverse battery condition.
OUTn
Symbol Parameter Test conditions Min. Typ. Max. Unit
(1)
Operating supply voltage 5.5 13 36 V
(1)
Undervoltage shutdown 3 4 5.5 V
(1)
Overvoltage shutdown 36 V
I
= 2 A; Tj = 25 °C 60 mΩ
On-state resistance
ON
OUT
I
OUT
= 2 A; V
> 8 V 120 mΩ
CC
V
V
USD
V
R
CC
OV
Doc ID 10879 Rev 2 7/28
Page 8
VND830SP-E Electrical specifications
Table 5. Power output (continued)
Symbol Parameter Test conditions Min. Typ. Max. Unit
= 13 V;
CC
= 0 V
OUT
= 13 V;
CC
= 0 V; Tj = 25°C
OUT
= 13 V 5 7 mA
CC
= 0 V; VCC=36V;
OUT
OUT
OUT
= 3.5 V -75 0 µA
OUT
= 0 V; V
= 0 V; V
CC
CC
= 13 V;
= 13 V;
050µA
12 40 µA
12 25 µA
5µA
3µA
(1)
I
S
I
L(off1)
I
L(off2)
I
L(off3)
I
L(off4)
1. Per device.

Table 6. Protections

Supply current
Off-state output current
Off-state output current V
Off-state output current
Off-state output current
(1)
Off-state; V
= V
V
IN
Off-state; V V
= V
IN
On-state; V
= V
V
IN
Tj=125°C
= 0 V; V
IN
= V
V
IN
Tj = 125 °C
V
= V
IN
Tj=25°C
Symbol Parameter Test conditions Min. Typ. Max. Unit
T
T
t
SDL
I
V
demag
Shutdown temperature 150 175 200 °C
TSD
T
Reset temperature 135 °C
R
Thermal hysteresis 7 15 °C
hyst
Status delay in overload conditions
Current limitation
lim
Turn-off output clamp voltage
> T
T
j
TSD
V
= 13 V 6 9 15 A
CC
5.5 V < V
I
OUT
< 36 V 15 A
CC
= 2 A; L = 6 mH V
-41 V
CC
CC
-48 V
20 µs
-55 V
CC
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be used together with a proper software strategy. If the device is subjected to abnormal conditions, this software must limit the duration and number of activation cycles.

Tabl e 7. VCC - output diode

Symbol Parameter Test conditions Min. Typ. Max. Unit
V
Forward on voltage -I
F

Table 8. Status pin

=1.3A; Tj=150°C — — 0.6 V
OUT
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
STAT
I
LSTAT
C
STAT
Status low output voltage I
= 1.6 mA 0.5 V
STAT
Status leakage current Normal operation; V
Status pin input capacitance Normal operation; V
= 5 V 10 µA
STAT
= 5 V 100 pF
STAT
Doc ID 10879 Rev 2 8/28
Page 9
VND830SP-E Electrical specifications
Table 8. Status pin (continued)
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
= 1 mA 6 6.8 8 V
V
Table 9. Switching (V
Status clamp voltage
SCL
CC
= 13 V)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
d(off)
dV
OUT
dV
OUT

Table 10. Open-load detection

Turn-on delay time
Turn-off delay time
/dt
Turn-on voltage slope
(on)
/dt
Turn-off voltage slope
(off)
STAT
I
= -1 mA -0.7 V
STAT
= 6.5 Ω from VIN rising
R
L
edge to V
R
= 6.5 Ω from VIN falling
L
edge to V
= 6.5 Ω from V
R
L
to V
OUT
= 6.5 Ω from V
R
L
to V
OUT
= 1.3 V
OUT
= 11.7 V
OUT
= 10.4 V
= 1.3 V
OUT
OUT
= 1.3 V
= 11.7 V
—30—µs
—30—µs
—
—
See
Figure 21
See
Figure 22
—V/µs
—V/µs
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
t
DOL(on)
V
t
DOL(off)

Table 11. Logic input

Open-load on-state detection
OL
threshold
Open-load on-state detection delay
Open-load off-state voltage
OL
detection threshold
Open-load detection delay at turn-off
= 5 V 50 100 200 mA
V
IN
= 0 A 200 µs
I
OUT
V
= 0 V 1.5 2.5 3.5 V
IN
1000 µs
Symbol Parameter Test conditions Min. Typ. Max. Unit
Input low level 1.25 V
IL
I
Low level input current V
IL
Input high level 3.25 V
IH
High level input current V
I
IH
= 1.25 V 1 µA
IN
= 3.25 V 10 µA
IN
Input hysteresis voltage 0.5 V
I
= 1 mA 6 6.8 8 V
Input clamp voltage
ICL
IN
= -1 mA -0.7 V
I
IN
V
V
V
V
I(hyst)
Doc ID 10879 Rev 2 9/28
Page 10
VND830SP-E Electrical specifications

Figure 4. Status timings

OPEN LOAD STATUS TIMING (with external pull-up)
V
> V
OUT
OL
V
INn
V
STATn
t
DOL(off)

Table 12. Truth table

I
OUT
t
DOL(on)
< I
OL
OVER TEMP STATUS TIMING
V
INn
V
STATn
t
SDL
Tj > T
Conditions Input Output Sense
Normal operation
Current limitation
Overtemperature
Undervoltage
Overvoltage
Output voltage > V
Output current < I
OL
OL
L
H
L H H
L H
L H
L H
L H
L H
L
H
L X X
L
L
L
L
L
L
H H
L H
(T (T
< T
j
> T
j
TSD
TSD
TSD
H H
H ) H ) L
H
L
X
X
H
H
L
H
H
L
t
SDL
Doc ID 10879 Rev 2 10/28
Page 11
VND830SP-E Electrical specifications

Figure 5. Switching time waveforms

Doc ID 10879 Rev 2 11/28
Page 12
VND830SP-E Electrical specifications
Table 13. Electrical transient requirements on V
ISO T/R
7637/1
test pulse
I II III IV Delays and impedance
1 -25 V -50 V -75 V -100 V
2 +25 V +50 V +75 V +100 V
3a -25 V -50 V -100 V -150 V
3b +25 V +50 V +75 V +100 V 0.1 µs, 50 Ω
4 -4 V -5 V -6 V -7 V 100 ms, 0.01 Ω
5 +26.5V +46.5V +66.5V +86.5V 400ms, 2Ω

Table 14. Electrical transient requirements on VCC pin (part 2)

Test levels
pin (part 1)
CC
2ms, 10Ω
0.2 ms, 10 Ω
0.1 µs, 50 Ω
ISO T/R
Test levels results
7637/1
test pulse
I II III IV
1 CCCC
2 CCCC
3a CCCC
3b CCCC
4 CCCC
5CEEE

Table 15. Electrical transient requirements on VCC pin (part 3)

Class Contents
C All functions of the device are performed as designed after exposure to disturbance.
E
One or more functions of the device is not performed as designed after exposure to disturbance and cannot be returned to proper operation without replacing the device.
Doc ID 10879 Rev 2 12/28
Page 13
VND830SP-E Electrical specifications

Figure 6. Waveforms

NORMAL OPERATION
INPUT
n
OUTPUT VOLTAGE
STATUS
n
V
CC
INPUT
n
OUTPUT VOLTAGE
STATUS
n
V
CC
INPUT
n
OUTPUT VOLTAGE
STATUS
n
n
n
n
V
USD
VCC<V
UNDERVOLTAGE
OVERVOLTAGE
OV
V
USDhyst
undefined
V
> V
CC
OV
INPUT
n
OUTPUT VOLTAGE
STATUS
n
INPUT
n
OUTPUT VOLTAGE
STATUS
n
T
j
INPUT
n
OUTPUT CURRENT
STATUS
n
OPEN-LOAD with external pull-up
V
> V
n
V
OL
OUT
OL
OPEN-LOAD without external pull-up
n
T
TSD
T
R
n
OVERTEMPERATURE
Doc ID 10879 Rev 2 13/28
Page 14
VND830SP-E Electrical specifications

2.4 Electrical characteristics curves

Figure 7. Off-state output current Figure 8. High level input current
IL(off1) (uA)
2.5
2.25
2
1.75
1.5
1.25
0.75
0.5
0.25
0

Figure 9. Input clamp voltage Figure 10. Status leakage current

Off state Vcc=36V
Vin=Vout=0V
1
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
Vicl (V)
8
7.8
7.6
7.4
7.2
7
6.8
6.6
6.4
6.2
6
Iin=1mA
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
Iih (uA)
5
4.5
3.5
2.5
1.5
0.5
Vin=3.25V
4
3
2
1
0
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
Ilstat (uA)
0.05
0.04
Vstat=5V
0.03
0.02
0.01
0
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)

Figure 11. Status low output voltage Figure 12. Status clamp voltage

Vstat (V)
0.8
0.7
Istat=1.6mA
0.6
0.5
0.4
0.3
0.2
0.1
0
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
Vscl (V)
8
7.8
7.6
7.4
7.2
6.8
6.6
6.4
6.2
Istat=1mA
7
6
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
Doc ID 10879 Rev 2 14/28
Page 15
VND830SP-E Electrical specifications
Figure 13. On-state resistance vs T
case
Ron (mOhm)
160
140
120
100
80
60
40
20
0
-50 -25 0 25 50 75 100 125 150 175
Iout=2A
Vcc=8V; 13V & 36V
Tc (°C)
Figure 15. Open-load on-state detection
threshold
Iol (mA)
150
140
130
120
110
100
90
80
70
60
50
Vcc=13V
Vin=5V
-50 -25 0 25 50 75 100 125 150 175
Tc (ºC)

Figure 17. Input high level Figure 18. Input low level

Vih (V)
3.6
3.4
3.2
3
2.8
2.6
2.4
2.2
-50 -25 0 25 50 75 100 125 150 175
Tc ( ° C)
Figure 14. On-state resistance vs V
Ron (mOhm)
120
110
100
90
80
70
60
50
40
30
20
10
0
5 10152025303540
Vcc (V)
Figure 16. Open-load off-state detection
threshold
Vol (V)
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
Vil (V)
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
Vin=0V
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
-50 -25 0 25 50 75 10 0 125 150 175
Tc (°C)
CC
Tc=150°C
Tc=25°C
Tc= - 40°C
Iout=5A
Doc ID 10879 Rev 2 15/28
Page 16
VND830SP-E Electrical specifications

Figure 19. Input hysteresis voltage Figure 20. Overvoltage shutdown

Vhyst (V)
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)

Figure 21. Turn-on voltage slope Figure 22. Turn-off voltage slope

dVout/dt(on) (V/ms)
800
700
600
500
400
300
200
100
Vcc=13V
Rl=6.5Ohm
0
-50 -25 0 25 50 75 100 125 150 175
Tc (ºC)
Vov (V)
50
48
46
44
42
40
38
36
34
32
30
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
dVout/dt(off) (V/ms)
600
550
500
450
400
350
300
250
200
Vcc=13V
Rl=6.5Ohm
-50 -25 0 25 50 75 100 125 150 175
Tc (ºC)
Figure 23. I
Ilim (A)
20
18
16
14
12
10
8
6
4
2
0
-50 -25 0 25 50 75 100 125 150 175
LIM
Vcc=13V
vs T
case
Tc (°C)
Doc ID 10879 Rev 2 16/28
Page 17
VND830SP-E Electrical specifications

2.5 Maximum demagnetization energy

Figure 24. PowerSO-10 maximum turn-off current versus load inductance

I
LM A X ( A)
100
10
A
B
C
1
0,1 1 10 100
A = single pulse at T
B= repetitive pulse at T
C= repetitive pulse at T
Conditions:
= 13.5 V
V
CC
VIN, I
L
Note: Values are generated with R In case of repetitive pulses, T specified above for curves B and C.
Demagnetization
= 0 Ω.
L
jstart
L( m H )
= 150 °C
Jstart
= 100 °C
Jstart
= 125 °C
Jstart
Demagnetization
(at beginning of each demagnetization) of every pulse must not exceed the temperature
Demagnetization
t
Doc ID 10879 Rev 2 17/28
Page 18
VND830SP-E Application schematic

3 Application schematic

Figure 25. Application schematic

+5V
+5V
+5V
μ
R
prot
C
R
prot
R
prot
R
prot
STATUS1
INPUT1
STATUS2
INPUT2
V
CC
D
ld
OUTPUT1
D
OUTPUT2
GND
GND
R
V
GND
GND

3.1 GND protection network against reverse battery

This section provides two solutions for implementing a ground protection network against reverse battery.
3.1.1 Solution 1: a resistor in the ground line (R
This can be used with any type of load.
The following show how to dimension the R
1. R
2. R
where -I
≤ 600 mV / I
GND
≥ (-VCC) / (-I
GND
is the DC reverse ground pin current and can be found in the absolute
GND
S(on)max
)
GND
maximum rating section of the device datasheet.
GND
resistor:
GND
only)
Power dissipation in R
P
= (-VCC)2/ R
D
GND
GND
(when V
< 0 during reverse battery situations) is:
CC
This resistor can be shared amongst several different HSDs. Please note that the value of this resistor should be calculated with formula (1) where I
S(on)max
becomes the sum of the
maximum on-state currents of the different devices.
Doc ID 10879 Rev 2 18/28
Page 19
VND830SP-E Application schematic
Please note that, if the microprocessor ground is not shared by the device ground, then the R
will produce a shift (I
GND
S(on)max
* R
) in the input thresholds and the status output
GND
values. This shift will vary depending on how many devices are ON in the case of several high-side drivers sharing the same R
GND
.
If the calculated power dissipation requires the use of a large resistor, or several devices have to share the same resistor, then ST suggests using solution 2 below.
3.1.2 Solution 2: a diode (D
A resistor (R
= 1 kΩ) should be inserted in parallel to D
GND
) in the ground line
GND
an inductive load. This small signal diode can be safely shared amongst several different HSD. Also in this case, the presence of the ground network will produce a shift (j600mV) in the input threshold and the status output values if the microprocessor ground is not common with the device ground. This shift will not vary if more than one HSD shares the same diode/resistor network. Series resistor in INPUT and STATUS lines are also required to prevent that, during battery voltage transient, the current exceeds the Absolute Maximum Rating. Safest configuration for unused INPUT and STATUS pin is to leave them unconnected.

3.2 Load dump protection

Dld is necessary (voltage transient suppressor) if the load dump peak voltage exceeds the V
maximum DC rating. The same applies if the device is subject to transients on the VCC
CC
line that are greater than those shown in the ISO T/R 7637/1 table.

3.3 MCU I/O protection

If a ground protection network is used and negative transients are present on the VCC line, the control pins will be pulled negative. ST suggests to insert a resistor (R prevent the microcontroller I/O pins from latching up.
if the device will be driving
GND
) in line to
prot
The value of these resistors is a compromise between the leakage current of microcontroller and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of microcontroller I/Os:
-V
CCpeak
/ I
latchup
≤ R
prot
≤ (V
OHμC
- V
IH
- V
GND
) / I
IHmax
Example
For the following conditions:
V
CCpeak
I
latchup
V
OHμC
5kΩ ≤ R
Recommended values are:
R
prot
= -100 V
≥ 20 mA
≥ 4.5 V
prot
= 10 kΩ
≤ 65 kΩ.
Doc ID 10879 Rev 2 19/28
Page 20
VND830SP-E Application schematic

3.4 Open-load detection in off-state

Off-state open load detection requires an external pull-up resistor (RPU) connected between OUTPUT pin and a positive supply voltage (V microprocessor.
The external resistor has to be selected according to the following requirements:
1. no false open load indication when load is connected: in this case we have to avoid V
to be higher than V
OUT
V
= (V
OUT
PU
/ (RL + RPU))RL < V
; this results in the following condition
Olmin
Olmin.
2. no misdetection when load is disconnected: in this case the V V
Because I up resistor R
; this results in the following condition R
OLmax
may significantly increase if V
S(OFF)
should be connected to a supply that is switched OFF when the module is in
PU
standby.

Figure 26. Open-load detection in off-state

) like the +5V line used to supply the
PU
has to be higher than
PU
- V
OUT
OLmax
) / I
L(off2)
.
< (V
PU
is pulled high (up to several mA), the pull-
out
Doc ID 10879 Rev 2 20/28
Page 21
VND830SP-E Package and PCB thermal data

4 Package and PCB thermal data

4.1 PowerSO-10 thermal data

Figure 27. PowerSO-10 PC board

Note: Layout condition of R
thickness = 2 mm, Cu thickness = 35 µm, Copper areas: from minimum pad lay-out to
2
8cm
).
Figure 28. R
thj-amb
and Zth measurements (PCB FR4 area = 58 mm x 58 mm, PCB
th
vs PCB copper area in open box free air condition
Doc ID 10879 Rev 2 21/28
Page 22
VND830SP-E Package and PCB thermal data

Figure 29. Thermal impedance junction ambient single pulse

Equation 1: pulse calculation formula
Z
where
THδ
RTHδ Z
δ tpT⁄=
THtp
1 δ–()+⋅=

Figure 30. Thermal fitting model of a double channel HSD in PowerSO-10

Tj_1
Pd1
Tj_2
C1
C1 C2
R1
Pd2
C3 C4
R3R1 R6R5R2
R2
R4
T_amb
C5 C6C2
Doc ID 10879 Rev 2 22/28
Page 23
VND830SP-E Package and PCB thermal data

Table 16. Thermal parameters

Area / island (cm2) Footprint 6
R1 (°C/W) 0.15
R2 (°C/W) 0.8
R3 (°C/W) 0.7
R4 (°C/W) 0.8
R5 (°C/W) 12
R6 (°C/W) 37 22
C1 (W.s/°C) 0.0006
C2 (W.s/°C) 2.1E-03
C3 (W.s/°C) 0.013
C4 (W.s/°C) 0.3
C5 (W.s/°C) 0.75
C6 (W.s/°C) 3 5
Doc ID 10879 Rev 2 23/28
Page 24
VND830SP-E Package and packing information

5 Package and packing information

5.1 ECOPACK® packages

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.

5.2 PowerSO-10 package information

Figure 31. PowerSO-10 package dimensions

10
HE
h
A
F
A1
1
eB
0.25
D
= =
D1
= =
E2
DETAIL "A"
B
0.10 A
E
SEATING
PLANE
A
C
B
E4
SEATING PLANE
A1
DETAIL "A"
L
α
Doc ID 10879 Rev 2 24/28
Page 25
VND830SP-E Package and packing information

Table 17. PowerSO-10 mechanical data

mm.
DIM.
Min. Typ. Max.
A 3.35 3.65
(1)
A
A1 0 0.10
B 0.40 0.60
(1)
B
C 0.35 0.55
(1)
C
D 9.40 9.60
D1 7.40 7.60
E 9.30 9.50
3.4 3.6
0.37 0.53
0.23 0.32
E2 7.20 7.60
(1)
E2
E4 5.90 6.10
(1)
E4
e1.27
F 1.25 1.35
(1)
F
H 13.80 14.40
(1)
H
h0.50
L 1.20 1.80
(1)
L
α 0° 8°
(1)
α
1. Muar only POA P013P.
7.30 7.50
5.90 6.30
1.20 1.40
13.85 14.35
0.80 1.10
2° 8°
Doc ID 10879 Rev 2 25/28
Page 26
VND830SP-E Package and packing information

5.3 PowerSO-10 packing information

Figure 32. PowerSO-10 suggested
pad layout
Figure 33. PowerSO-10 tube shipment
(no suffix)
C
B
A
All dimensions are in mm.
Base Q.ty Bulk Q.ty Tube length (± 0.5) A B C (± 0.1)
Casablanca 50 1000 532 10.4 16.4 0.8
Muar 50 1000 532 4.9 17.2 0.8

Figure 34. PowerSO-10 tape and reel shipment (suffix “TR”)

Reel dimensions
Base Q.ty 600 Bulk Q.ty 600 A (max) 330 B (min) 1.5 C (± 0.2) 13 F 20.2 G (+ 2 / -0) 24.4 N (min) 60 T (max) 30.4
MUARCASABLANCA
A
B
C
Tape dimensions
According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb. 1986
Tape width W 24 Tape Hole Spacing P0 (± 0.1) 4 Component Spacing P 24 Hole Diameter D (± 0.1/-0) 1.5 Hole Diameter D1 (min) 1.5 Hole Position F (± 0.05) 11.5 Compartment Depth K (max) 6.5 Hole Spacing P1 (± 0.1) 2
All dimensions are in mm.
Doc ID 10879 Rev 2 26/28
Top
cover
tape
End
500mm min
Empty components pock ets saled with cover tape.
User direction of feed
Start
No componentsNo components Components
500mm min
Page 27
VND830SP-E Revision history

6 Revision history

Table 18. Document revision history

Date Revision Changes
01-Oct-2004 1 Initial release.
Document reformatted and restructured.
07-Feb-2011 2
Updated Features list. Updated Table 16: Thermal parameters
Doc ID 10879 Rev 2 27/28
Page 28
VND830SP-E
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Doc ID 10879 Rev 2 28/28
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