The VND830SP-E is a monolithic device made by
using STMicroelectronics™ VIPower™ M0-3
technology, intended for driving any kind of load
with one side connected to ground.
Active V
against low energy spikes (see ISO7637 transient
compatibility table).
Active current limitation combined with thermal
shutdown and automatic restart protects the
device against overload. The device detects
open-load condition both is on-state and off-state.
Output shorted to V
Device automatically turns-off in case of ground
pin disconnection.
Table 2.Suggested connections for unused and not connected pins
Connection / pinStatusN.C.OutputInput
FloatingXXXX
To ground—X—
Through 10 KΩ
resistor
Doc ID 10879 Rev 25/28
Page 6
VND830SP-EElectrical specifications
2 Electrical specifications
2.1 Absolute maximum ratings
Stressing the device above the rating listed in Ta bl e 3 may cause permanent damage to the
device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the operating sectionsof this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality
document.
Table 3.Absolute maximum ratings
SymbolParameterValueUnit
V
-V
-I
I
OUT
-I
I
STAT
V
E
P
T
CC
CC
GND
OUT
I
IN
ESD
MAX
tot
T
j
T
c
stg
DC supply voltage41V
Reverse DC supply voltage-0.3V
DC reverse ground pin current-200mA
DC output currentInternally limitedA
Reverse DC output current -6A
DC input current+/-10mA
DC status current+/-10mA
Electrostatic discharge (Human Body Model: R = 1.5 KΩ;
C=100pF)
1. When mounted on a standard single-sided FR-4 board with 0.5 cm2 of Cu (at least 35 µm thick). Horizontal mounting and
no artificial air flow.
2. When mounted on a standard single-sided FR-4 board with 6 cm
artificial air flow.
Thermal resistance junction-case1.7°C/W
Thermal resistance junction-ambient51.7
2
of Cu (at least 35 µm thick). Horizontal mounting and no
(1)
37
(2)
°C/W
2.3 Electrical characteristics
Values specified in this section are for 8 V < V
otherwise stated.
(Per each channel)
Figure 3.Current and voltage conventions
I
IN1
INPUT 1
I
V
IN1
STAT1
STATUS 1
V
STAT1
I
IN2
INPUT 2
I
V
STAT2
IN2
STATUS 2
V
STAT2
< 36 V; -40 °C < Tj < 150 °C, unless
CC
(1)
V
F1
V
CC
I
OUT1
OUTPUT 1
V
OUT1
I
OUT2
OUTPUT 2
V
OUT2
GND
I
GND
I
S
V
CC
1. VFn = V
Table 5.Power output
CCn
- V
during reverse battery condition.
OUTn
SymbolParameterTest conditionsMin.Typ.Max. Unit
(1)
Operating supply voltage5.51336V
(1)
Undervoltage shutdown345.5V
(1)
Overvoltage shutdown36V
I
= 2 A; Tj = 25 °C60mΩ
On-state resistance
ON
OUT
I
OUT
= 2 A; V
> 8 V120mΩ
CC
V
V
USD
V
R
CC
OV
Doc ID 10879 Rev 27/28
Page 8
VND830SP-EElectrical specifications
Table 5.Power output (continued)
SymbolParameterTest conditionsMin.Typ.Max. Unit
= 13 V;
CC
= 0 V
OUT
= 13 V;
CC
= 0 V; Tj = 25°C
OUT
= 13 V57mA
CC
= 0 V; VCC=36V;
OUT
OUT
OUT
= 3.5 V -750µA
OUT
= 0 V; V
= 0 V; V
CC
CC
= 13 V;
= 13 V;
050µA
1240µA
1225µA
5µA
3µA
(1)
I
S
I
L(off1)
I
L(off2)
I
L(off3)
I
L(off4)
1. Per device.
Table 6.Protections
Supply current
Off-state output current
Off-state output currentV
Off-state output current
Off-state output current
(1)
Off-state; V
= V
V
IN
Off-state; V
V
= V
IN
On-state; V
= V
V
IN
Tj=125°C
= 0 V; V
IN
= V
V
IN
Tj = 125 °C
V
= V
IN
Tj=25°C
SymbolParameterTest conditionsMin.Typ.Max.Unit
T
T
t
SDL
I
V
demag
Shutdown temperature150175200°C
TSD
T
Reset temperature135°C
R
Thermal hysteresis715°C
hyst
Status delay in overload
conditions
Current limitation
lim
Turn-off output clamp
voltage
> T
T
j
TSD
V
= 13 V6915A
CC
5.5 V < V
I
OUT
< 36 V15A
CC
= 2 A; L = 6 mHV
-41V
CC
CC
-48 V
20µs
-55V
CC
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
Tabl e 7.VCC - output diode
SymbolParameterTest conditionsMin.Typ. Max.Unit
V
Forward on voltage-I
F
Table 8.Status pin
=1.3A; Tj=150°C——0.6V
OUT
SymbolParameterTest conditionsMin. Typ. Max.Unit
V
STAT
I
LSTAT
C
STAT
Status low output voltageI
= 1.6 mA0.5V
STAT
Status leakage currentNormal operation; V
Status pin input capacitanceNormal operation; V
= 5 V10µA
STAT
= 5 V100pF
STAT
Doc ID 10879 Rev 28/28
Page 9
VND830SP-EElectrical specifications
Table 8.Status pin (continued)
SymbolParameterTest conditionsMin. Typ. Max.Unit
I
= 1 mA66.88V
V
Table 9.Switching (V
Status clamp voltage
SCL
CC
= 13 V)
SymbolParameterTest conditionsMin.Typ.Max. Unit
t
d(on)
t
d(off)
dV
OUT
dV
OUT
Table 10.Open-load detection
Turn-on delay time
Turn-off delay time
/dt
Turn-on voltage slope
(on)
/dt
Turn-off voltage slope
(off)
STAT
I
= -1 mA-0.7V
STAT
= 6.5 Ω from VIN rising
R
L
edge to V
R
= 6.5 Ω from VIN falling
L
edge to V
= 6.5 Ω from V
R
L
to V
OUT
= 6.5 Ω from V
R
L
to V
OUT
= 1.3 V
OUT
= 11.7 V
OUT
= 10.4 V
= 1.3 V
OUT
OUT
= 1.3 V
= 11.7 V
—30—µs
—30—µs
—
—
See
Figure 21
See
Figure 22
—V/µs
—V/µs
SymbolParameterTest conditionsMin. Typ. Max. Unit
I
t
DOL(on)
V
t
DOL(off)
Table 11.Logic input
Open-load on-state detection
OL
threshold
Open-load on-state detection
delay
Open-load off-state voltage
OL
detection threshold
Open-load detection delay at
turn-off
= 5 V 50100200mA
V
IN
= 0 A 200µs
I
OUT
V
= 0 V1.52.53.5V
IN
1000µs
SymbolParameterTest conditionsMin.Typ.Max.Unit
Input low level1.25V
IL
I
Low level input currentV
IL
Input high level3.25V
IH
High level input currentV
I
IH
= 1.25 V1µA
IN
= 3.25 V10µA
IN
Input hysteresis voltage0.5V
I
= 1 mA 66.88V
Input clamp voltage
ICL
IN
= -1 mA-0.7V
I
IN
V
V
V
V
I(hyst)
Doc ID 10879 Rev 29/28
Page 10
VND830SP-EElectrical specifications
Figure 4.Status timings
OPEN LOAD STATUS TIMING (with external pull-up)
V
> V
OUT
OL
V
INn
V
STATn
t
DOL(off)
Table 12.Truth table
I
OUT
t
DOL(on)
< I
OL
OVER TEMP STATUS TIMING
V
INn
V
STATn
t
SDL
Tj > T
ConditionsInputOutputSense
Normal operation
Current limitation
Overtemperature
Undervoltage
Overvoltage
Output voltage > V
Output current < I
OL
OL
L
H
L
H
H
L
H
L
H
L
H
L
H
L
H
L
H
L
X
X
L
L
L
L
L
L
H
H
L
H
(T
(T
< T
j
> T
j
TSD
TSD
TSD
H
H
H
) H
) L
H
L
X
X
H
H
L
H
H
L
t
SDL
Doc ID 10879 Rev 210/28
Page 11
VND830SP-EElectrical specifications
Figure 5.Switching time waveforms
Doc ID 10879 Rev 211/28
Page 12
VND830SP-EElectrical specifications
Table 13.Electrical transient requirements on V
ISO T/R
7637/1
test pulse
IIIIIIIVDelays and impedance
1-25 V-50 V-75 V-100 V
2+25 V+50 V+75 V+100 V
3a-25 V-50 V-100 V-150 V
3b+25 V+50 V+75 V+100 V0.1 µs, 50 Ω
4-4 V-5 V-6 V-7 V100 ms, 0.01 Ω
5+26.5V+46.5V+66.5V+86.5V400ms, 2Ω
Table 14.Electrical transient requirements on VCC pin (part 2)
Test levels
pin (part 1)
CC
2ms, 10Ω
0.2 ms, 10 Ω
0.1 µs, 50 Ω
ISO T/R
Test levels results
7637/1
test pulse
IIIIIIIV
1 CCCC
2 CCCC
3a CCCC
3b CCCC
4 CCCC
5CEEE
Table 15.Electrical transient requirements on VCC pin (part 3)
ClassContents
CAll functions of the device are performed as designed after exposure to disturbance.
E
One or more functions of the device is not performed as designed after exposure to
disturbance and cannot be returned to proper operation without replacing the device.
Doc ID 10879 Rev 212/28
Page 13
VND830SP-EElectrical specifications
Figure 6.Waveforms
NORMAL OPERATION
INPUT
n
OUTPUT VOLTAGE
STATUS
n
V
CC
INPUT
n
OUTPUT VOLTAGE
STATUS
n
V
CC
INPUT
n
OUTPUT VOLTAGE
STATUS
n
n
n
n
V
USD
VCC<V
UNDERVOLTAGE
OVERVOLTAGE
OV
V
USDhyst
undefined
V
> V
CC
OV
INPUT
n
OUTPUT VOLTAGE
STATUS
n
INPUT
n
OUTPUT VOLTAGE
STATUS
n
T
j
INPUT
n
OUTPUT CURRENT
STATUS
n
OPEN-LOAD with external pull-up
V
> V
n
V
OL
OUT
OL
OPEN-LOAD without external pull-up
n
T
TSD
T
R
n
OVERTEMPERATURE
Doc ID 10879 Rev 213/28
Page 14
VND830SP-EElectrical specifications
2.4 Electrical characteristics curves
Figure 7.Off-state output currentFigure 8.High level input current
IL(off1) (uA)
2.5
2.25
2
1.75
1.5
1.25
0.75
0.5
0.25
0
Figure 9.Input clamp voltageFigure 10. Status leakage current
Off state
Vcc=36V
Vin=Vout=0V
1
-50 -25025 5075 100 125 150 175
Tc (°C)
Vicl (V)
8
7.8
7.6
7.4
7.2
7
6.8
6.6
6.4
6.2
6
Iin=1mA
-50 -250255075 100 125 150 175
Tc (°C)
Iih (uA)
5
4.5
3.5
2.5
1.5
0.5
Vin=3.25V
4
3
2
1
0
-50 -250255075 100 125 150 175
Tc (°C)
Ilstat (uA)
0.05
0.04
Vstat=5V
0.03
0.02
0.01
0
-50 -25025 5075 100 125 150 175
Tc (°C)
Figure 11. Status low output voltageFigure 12. Status clamp voltage
Vstat (V)
0.8
0.7
Istat=1.6mA
0.6
0.5
0.4
0.3
0.2
0.1
0
-50 -250255075 100 125 150 175
Tc (°C)
Vscl (V)
8
7.8
7.6
7.4
7.2
6.8
6.6
6.4
6.2
Istat=1mA
7
6
-50 -250255075 100 125 150 175
Tc (°C)
Doc ID 10879 Rev 214/28
Page 15
VND830SP-EElectrical specifications
Figure 13. On-state resistance vs T
case
Ron (mOhm)
160
140
120
100
80
60
40
20
0
-50 -250255075 100 125 150 175
Iout=2A
Vcc=8V; 13V & 36V
Tc (°C)
Figure 15. Open-load on-state detection
threshold
Iol (mA)
150
140
130
120
110
100
90
80
70
60
50
Vcc=13V
Vin=5V
-50 -250255075 100 125 150 175
Tc (ºC)
Figure 17. Input high levelFigure 18. Input low level
Figure 21. Turn-on voltage slopeFigure 22. Turn-off voltage slope
dVout/dt(on) (V/ms)
800
700
600
500
400
300
200
100
Vcc=13V
Rl=6.5Ohm
0
-50 -250255075 100 125 150 175
Tc (ºC)
Vov (V)
50
48
46
44
42
40
38
36
34
32
30
-50 -250255075 100 125 150 175
Tc (°C)
dVout/dt(off) (V/ms)
600
550
500
450
400
350
300
250
200
Vcc=13V
Rl=6.5Ohm
-50 -250255075 100 125 150 175
Tc (ºC)
Figure 23. I
Ilim (A)
20
18
16
14
12
10
8
6
4
2
0
-50 -250255075 100 125 150 175
LIM
Vcc=13V
vs T
case
Tc (°C)
Doc ID 10879 Rev 216/28
Page 17
VND830SP-EElectrical specifications
2.5 Maximum demagnetization energy
Figure 24. PowerSO-10 maximum turn-off current versus load inductance
I
LM A X ( A)
100
10
A
B
C
1
0,1110100
A = single pulse at T
B= repetitive pulse at T
C= repetitive pulse at T
Conditions:
= 13.5 V
V
CC
VIN, I
L
Note:
Values are generated with R
In case of repetitive pulses, T
specified above for curves B and C.
Demagnetization
= 0 Ω.
L
jstart
L( m H )
= 150 °C
Jstart
= 100 °C
Jstart
= 125 °C
Jstart
Demagnetization
(at beginning of each demagnetization) of every pulse must not exceed the temperature
Demagnetization
t
Doc ID 10879 Rev 217/28
Page 18
VND830SP-EApplication schematic
3 Application schematic
Figure 25. Application schematic
+5V
+5V
+5V
μ
R
prot
C
R
prot
R
prot
R
prot
STATUS1
INPUT1
STATUS2
INPUT2
V
CC
D
ld
OUTPUT1
D
OUTPUT2
GND
GND
R
V
GND
GND
3.1 GND protection network against reverse battery
This section provides two solutions for implementing a ground protection network against
reverse battery.
3.1.1 Solution 1: a resistor in the ground line (R
This can be used with any type of load.
The following show how to dimension the R
1.R
2. R
where -I
≤ 600 mV / I
GND
≥ (-VCC) / (-I
GND
is the DC reverse ground pin current and can be found in the absolute
GND
S(on)max
)
GND
maximum rating section of the device datasheet.
GND
resistor:
GND
only)
Power dissipation in R
P
= (-VCC)2/ R
D
GND
GND
(when V
< 0 during reverse battery situations) is:
CC
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I
S(on)max
becomes the sum of the
maximum on-state currents of the different devices.
Doc ID 10879 Rev 218/28
Page 19
VND830SP-EApplication schematic
Please note that, if the microprocessor ground is not shared by the device ground, then the
R
will produce a shift (I
GND
S(on)max
* R
) in the input thresholds and the status output
GND
values. This shift will vary depending on how many devices are ON in the case of several
high-side drivers sharing the same R
GND
.
If the calculated power dissipation requires the use of a large resistor, or several devices
have to share the same resistor, then ST suggests using solution 2 below.
3.1.2 Solution 2: a diode (D
A resistor (R
= 1 kΩ) should be inserted in parallel to D
GND
) in the ground line
GND
an inductive load. This small signal diode can be safely shared amongst several different
HSD. Also in this case, the presence of the ground network will produce a shift (j600mV) in
the input threshold and the status output values if the microprocessor ground is not common
with the device ground. This shift will not vary if more than one HSD shares the same
diode/resistor network. Series resistor in INPUT and STATUS lines are also required to
prevent that, during battery voltage transient, the current exceeds the Absolute Maximum
Rating. Safest configuration for unused INPUT and STATUS pin is to leave them
unconnected.
3.2 Load dump protection
Dld is necessary (voltage transient suppressor) if the load dump peak voltage exceeds the
V
maximum DC rating. The same applies if the device is subject to transients on the VCC
CC
line that are greater than those shown in the ISO T/R 7637/1 table.
3.3 MCU I/O protection
If a ground protection network is used and negative transients are present on the VCC line,
the control pins will be pulled negative. ST suggests to insert a resistor (R
prevent the microcontroller I/O pins from latching up.
if the device will be driving
GND
) in line to
prot
The value of these resistors is a compromise between the leakage current of microcontroller
and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of
microcontroller I/Os:
-V
CCpeak
/ I
latchup
≤ R
prot
≤ (V
OHμC
- V
IH
- V
GND
) / I
IHmax
Example
For the following conditions:
V
CCpeak
I
latchup
V
OHμC
5kΩ ≤ R
Recommended values are:
R
prot
= -100 V
≥ 20 mA
≥ 4.5 V
prot
= 10 kΩ
≤ 65 kΩ.
Doc ID 10879 Rev 219/28
Page 20
VND830SP-EApplication schematic
3.4 Open-load detection in off-state
Off-state open load detection requires an external pull-up resistor (RPU) connected between
OUTPUT pin and a positive supply voltage (V
microprocessor.
The external resistor has to be selected according to the following requirements:
1.no false open load indication when load is connected: in this case we have to avoid
V
to be higher than V
OUT
V
= (V
OUT
PU
/ (RL + RPU))RL < V
; this results in the following condition
Olmin
Olmin.
2. no misdetection when load is disconnected: in this case the V
V
Because I
up resistor R
; this results in the following condition R
OLmax
may significantly increase if V
S(OFF)
should be connected to a supply that is switched OFF when the module is in
PU
standby.
Figure 26. Open-load detection in off-state
) like the +5V line used to supply the
PU
has to be higher than
PU
- V
OUT
OLmax
) / I
L(off2)
.
< (V
PU
is pulled high (up to several mA), the pull-
out
Doc ID 10879 Rev 220/28
Page 21
VND830SP-EPackage and PCB thermal data
4 Package and PCB thermal data
4.1 PowerSO-10 thermal data
Figure 27. PowerSO-10 PC board
Note:Layout condition of R
thickness = 2 mm, Cu thickness = 35 µm, Copper areas: from minimum pad lay-out to
2
8cm
).
Figure 28. R
thj-amb
and Zth measurements (PCB FR4 area = 58 mm x 58 mm, PCB
th
vs PCB copper area in open box free air condition
Doc ID 10879 Rev 221/28
Page 22
VND830SP-EPackage and PCB thermal data
Figure 29. Thermal impedance junction ambient single pulse
Equation 1: pulse calculation formula
Z
where
THδ
RTHδ Z
δtpT⁄=
THtp
1 δ–()+⋅=
Figure 30. Thermal fitting model of a double channel HSD in PowerSO-10
Tj_1
Pd1
Tj_2
C1
C1C2
R1
Pd2
C3C4
R3R1R6R5R2
R2
R4
T_amb
C5C6C2
Doc ID 10879 Rev 222/28
Page 23
VND830SP-EPackage and PCB thermal data
Table 16.Thermal parameters
Area / island (cm2)Footprint6
R1 (°C/W)0.15
R2 (°C/W)0.8
R3 (°C/W)0.7
R4 (°C/W)0.8
R5 (°C/W)12
R6 (°C/W)3722
C1 (W.s/°C)0.0006
C2 (W.s/°C)2.1E-03
C3 (W.s/°C)0.013
C4 (W.s/°C)0.3
C5 (W.s/°C)0.75
C6 (W.s/°C)35
Doc ID 10879 Rev 223/28
Page 24
VND830SP-EPackage and packing information
5 Package and packing information
5.1 ECOPACK® packages
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
5.2 PowerSO-10 package information
Figure 31. PowerSO-10 package dimensions
10
HE
h
A
F
A1
1
eB
0.25
D
= =
D1
= =
E2
DETAIL "A"
B
0.10 A
E
SEATING
PLANE
A
C
B
E4
SEATING
PLANE
A1
DETAIL "A"
L
α
Doc ID 10879 Rev 224/28
Page 25
VND830SP-EPackage and packing information
Table 17.PowerSO-10 mechanical data
mm.
DIM.
Min.Typ.Max.
A3.353.65
(1)
A
A100.10
B0.400.60
(1)
B
C0.350.55
(1)
C
D9.409.60
D17.407.60
E9.309.50
3.43.6
0.370.53
0.230.32
E27.207.60
(1)
E2
E45.906.10
(1)
E4
e1.27
F1.251.35
(1)
F
H13.8014.40
(1)
H
h0.50
L1.201.80
(1)
L
α0°8°
(1)
α
1. Muar only POA P013P.
7.307.50
5.906.30
1.201.40
13.8514.35
0.801.10
2°8°
Doc ID 10879 Rev 225/28
Page 26
VND830SP-EPackage and packing information
5.3 PowerSO-10 packing information
Figure 32. PowerSO-10 suggested
pad layout
Figure 33. PowerSO-10 tube shipment
(no suffix)
C
B
A
All dimensions are in mm.
Base Q.ty Bulk Q.ty Tube length (± 0.5) A B C (± 0.1)
Casablanca50100053210.4 16.4 0.8
Muar5010005324.9 17.2 0.8
Figure 34. PowerSO-10 tape and reel shipment (suffix “TR”)
Reel dimensions
Base Q.ty600
Bulk Q.ty600
A (max)330
B (min)1.5
C (± 0.2)13
F20.2
G (+ 2 / -0)24.4
N (min)60
T (max)30.4
MUARCASABLANCA
A
B
C
Tape dimensions
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
Updated Features list.
Updated Table 16: Thermal parameters
Doc ID 10879 Rev 227/28
Page 28
VND830SP-E
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
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