The VND830PEP-E is a monolithic device
designed in STMicroelectronics VIPower™ M0-3
Technology, intended for driving any kind of load
with one side connected to ground.
Active V
against low energy spikes (see ISO7637 transient
compatibility table).
Active current limitation combined with thermal
shutdown and automatic restart protects the
device against overload. The device detects open
load condition both in on and off-state. Output
shorted to V
automatically turns off in case of ground pin
disconnection.
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality document.
Table 3.Absolute maximum ratings
SymbolParameterValueUnit
DC supply voltage41V
CC
Reverse DC supply voltage- 0.3V
CC
DC reverse ground pin current- 200mA
GND
DC output currentInternally limitedA
Reverse DC output current - 6A
OUT
DC input current+/- 10mA
I
IN
DC status current+/- 10mA
stat
- V
- I
-I
V
I
OUT
I
Electrostatic discharge (human body model:R=1.5KΩ; C=100pF)
– Input
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
Table 11.Open-load detection
Thermal hysteresis715°C
hyst
Status delay in overload
conditions
Current limitation
lim
Turn-off output clamp voltage I
> T
T
j
TSD
5.5V < V
= 2A; L = 6mH
OUT
CC
< 36V
691515A
-41V
V
CC
CC
-48V
20µs
-
CC
55
A
V
Symbol Parameter Test conditions Min. Typ.Max.Unit
IOL
t
DOL(on)
Open-load on-state
detection threshold
Open-load on-state
detection delay
V
= 5V 50 100 200 mA
IN
= 0A 200 µs
I
OUT
Open-load off-state
VOL
voltage detection
V
= 0V 1.5 2.5 3.5 V
IN
threshold
Open-load detection
t
DOL(off)
delay at turn-off
1000 µs
Figure 4.Open-load status timing (with external pull-up)
Doc ID 10826 Rev 59/25
Page 10
Electrical specificationsVND830PEP-E
Figure 5.Over temperature status timing
Figure 6.Switching time waveforms
Table 12.Truth table
Conditions Inputn Outputn Statusn
Normal Operation
L
H
L
Current Limitation
H
H
Over temperature
Undervoltage
L
H
L
H
10/25 Doc ID 10826 Rev 5
L
H
L
X
X
L
L
L
L
H
H
H
(Tj < TTSD) H
(Tj > TTSD) L
H
L
X
X
Page 11
VND830PEP-EElectrical specifications
Table 12.Truth table (continued)
Conditions Inputn Outputn Statusn
Overvoltage
Output voltage > V
Output current < I
Table 13.Electrical transient requirements on VCC pin (part 1/3)
OLn
OLn
ISO T/R
L
H
L
H
L
H
Test level
L
L
H
H
L
H
7637/1
Test pulse
IIIIIIIVDelays and impedance
1- 25V- 50V- 75V- 100V2ms, 10Ω
2+ 25V+ 50V+ 75V+ 100V0.2ms, 10Ω
3a- 25V- 50V- 100V- 150V0.1µs, 50Ω
3b+ 25V+ 50V+ 75V+ 100V0.1µs, 50Ω
4- 4V- 5V- 6V- 7V100ms, 0.01Ω
5+ 26.5V+ 46.5V+ 66.5V+ 86.5V400ms, 2Ω
Table 14.Electrical transient requirements on VCC pin (part 2/3)
H
H
L
H
H
L
ISO T/R
Test lev el
7637/1
Test pulse
IIIIIIIV
1C C C C
2C C C C
3aCCCC
3bCCCC
4C C C C
5C E E E
Table 15.Electrical transient requirements on VCC pin (part 3/3)
ClassContents
C
E
All functions of the device are performed as designed after exposure to
disturbance.
One or more functions of the device is not performed as designed after exposure
and cannot be returned to proper operation without replacing the device.
Doc ID 10826 Rev 511/25
Page 12
Electrical specificationsVND830PEP-E
Figure 7.Waveforms
12/25 Doc ID 10826 Rev 5
Page 13
VND830PEP-EElectrical specifications
2.4 Electrical characteristics curves
Figure 8.Off-state output currentFigure 9.High level input current
Figure 10. Input clamp voltageFigure 11. Status leakage current
IL(off1) (µA)
2.5
2.25
1.75
1.5
1.25
0.75
0.5
0.25
Vcc=36V
2
1
0
-50 -250255075 100 125 150 175
Tc ( °C )
Vicl (V)
8
7.8
7.6
7.4
7.2
6.8
6.6
6.4
6.2
Iin=1mA
7
-50 -250255075 100 125 150 175
Tc ( °C )
Iih (µ A)
5
4.5
3.5
2.5
1.5
0.5
Vin=3.25V
4
3
2
1
0
-50 -250255075 100 125 150 175
Tc ( °C )
Ilst at (µA)
0.1
0.09
0.08
Vstat=5V
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
-50 -250255075 100 125 150 175
Tc ( °C )
Figure 12. Status low output voltageFigure 13. Status clamp voltage
Vsta t ( V)
0.8
0.7
Istat=1.6mA
0.6
0.5
0.4
0.3
0.2
0.1
0
-50 -2502550 75 100 125 150 175
Vscl (V)
8
7.8
7.6
Istat=1mA
7.4
7.2
7
6.8
6.6
6.4
6.2
6
-50 -2502550 75 100 125 150 175
Tc (° C)
Doc ID 10826 Rev 513/25
Tc (° C)
Page 14
Electrical specificationsVND830PEP-E
Figure 14. Turn-on voltage slopeFigure 15. Turn-off voltage slope
dVout/dt(on) (V/ms)
1000
900
800
700
600
500
400
300
200
100
Vcc=13V
Rl=6.5Ohm
-50 -250255075 100 125 150 175
Tc ( °C )
Figure 16. On-state resistance vs TcaseFigure 17. On-state resistance vs V
3.1 GND protection network against reverse battery
This section provides two solutions for implementing a ground protection network against
reverse battery.
3.1.1 Solution 1: a resistor in the ground line (R
This can be used with any type of load.
The following show how to dimension the R
1.R
2. R
where - I
maximum rating section of the device datasheet.
Power dissipation in R
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I
maximum on-state currents of the different devices.
Please note that, if the microprocessor ground is not shared by the device ground, then the
R
GND
values. This shift will vary depending on how many devices are ON in the case of several
high side drivers sharing the same R
≤ 600mV / (I
GND
≥ ( - VCC) / (- I
GND
is the DC reverse ground pin current and can be found in the absolute
GND
P
= (- VCC)2/ R
D
GND
will produce a shift (I
S(on)max
GND
(when V
GND
S(on)max
)
)
< 0 during reverse battery situations) is:
CC
* R
GND
.
GND
resistor:
GND
) in the input thresholds and the status output
GND
S(on)max
only)
becomes the sum of the
16/25 Doc ID 10826 Rev 5
Page 17
VND830PEP-EApplication information
If the calculated power dissipation leads to a large resistor, or several devices have to share
the same resistor, then ST suggests using solution 2 below.
3.1.2 Solution 2: a diode (D
A resistor (R
= 1kΩ) should be inserted in parallel to D
GND
) in the ground line
GND
inductive load. This small signal diode can be safely shared amongst several different HSD.
Also in this case, the presence of the ground network will produce a shift (600mV) in the
input threshold and the status output values if the microprocessor ground is not common
with the device ground. This shift will not vary if more than one HSD shares the same
diode/resistor network. Series resistor in INPUT and STATUS lines are also required to
prevent that, during battery voltage transient, the current exceeds the absolute maximum
rating. Safest configuration for unused INPUT and STATUS pin is to leave them
unconnected.
3.2 Load dump protection
Dld is necessary (voltage transient suppressor) if the load dump peak voltage exceeds the
V
maximum DC rating. The same applies if the device is subject to transients on the VCC
CC
line that are greater than those shown in the ISO T/R 7637/1 table.
3.3 MCU I/O protection
If a ground protection network is used and negative transients are present on the VCC line,
the control pins will be pulled negative. ST suggests to insert a resistor (R
prevent the µC I/O pins from latching up.
if the device will be driving an
GND
≈
) in line to
prot
The value of these resistors is a compromise between the leakage current of µC and the
current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of µC
I/Os:
- V
CCpeak
/ I
latchup
≤ R
prot
≤ (V
OHμC
Example
For the following conditions:
V
CCpeak
I
latchup
V
OHμC
5kΩ ≤ R
= - 100V
≥ 20mA
≥ 4.5V
≤ 65kΩ.
prot
Recommended values are:
R
= 10kΩ
prot
3.4 Open-load detection in off-state
Off-state open-load detection requires an external pull-up resistor (RPU) connected between
OUTPUT pin and a positive supply voltage (V
microprocessor.
The external resistor has to be selected according to the following requirements:
- V
- V
IH
) / I
GND
) like the +5V line used to supply the
PU
IHmax
Doc ID 10826 Rev 517/25
Page 18
Application informationVND830PEP-E
1.no false open-load indication when load is connected: in this case we have to avoid
V
to be higher than V
OUT
V
OUT
= (V
/ (RL+RPU)) RL < V
PU
2. no misdetection when load is disconnected: in this case the V
V
R
Because I
up resistor R
standby. The values of V
; this results in the following condition
OLmax
PU
< (V
– V
PU
may significantly increase if V
s(OFF)
should be connected to a supply that is switched off when the module is in
PU
OLmax
) / I
OLmin
; this results in the following condition
Olmin
L(off2)
, V
.
OLmax
Olmin
and I
.
is pulled high (up to several mA), the pull-
out
are available in the electrical
L(off2)
has to be higher than
OUT
characteristics section.
Figure 27. Open-load detection in off-state
18/25 Doc ID 10826 Rev 5
Page 19
VND830PEP-EPackage and PC board thermal data
4 Package and PC board thermal data
4.1 PowerSSO-24 thermal data
Figure 28. PowerSSO-24 PC board
Note:Layout condition of Rth and Zth measurements (PCB FR4 area= 78mm x 78mm, PCB
thickness=2mm, Cu thickness=35µm, Copper areas: from minimum pad lay-out to 8cm
Figure 29.
RTHj_a mb(°C/W )
R
vs PCB copper area in open box
thj-amb
60
55
50
45
40
0123456789
2
).
PCB Cu heatsink are a (cm^2)
Doc ID 10826 Rev 519/25
Page 20
Package and PC board thermal dataVND830PEP-E
Figure 30. PowerSSO-24 thermal impedance junction ambient single pulse
ZTH (°C/W)
100
Footprint
2
8 cm
10
1
0.1
0.00010.0010.010.11101001000
Time (s)
Figure 31. Thermal fitting model of a double channel HSD in PowerSSO-24
Equation 1
Z
THδ
: pulse calculation formula
RTHδ Z
THtp
1 δ–()+⋅=
where δ = tP/T
20/25 Doc ID 10826 Rev 5
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VND830PEP-EPackage and PC board thermal data
Table 16.Thermal parameters
Area/island (cm2)Footprint8
R1 = R7 (°C/W)0.1
R2 = R8 (°C/W)0.9
R3 (°C/W)1
R4 (°C/W)4
R5 (°C/W)13.5
R6 (°C/W)3722
C1 = C7 (W.s/°C)0.0006
C2 = C8 (W.s/°C)0.0025
C3 (W.s/°C)0.025
C4 (W.s/°C)0.08
C5 (W.s/°C)0.7
C6 (W.s/°C)35
Doc ID 10826 Rev 521/25
Page 22
Package informationVND830PEP-E
5 Package information
5.1 ECOPACK® packages
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com
ECOPACK
®
is an ST trademark.
5.2 PowerSSO-24 mechanical data
Figure 32. PowerSSO-24 package dimensions
.
22/25 Doc ID 10826 Rev 5
Page 23
VND830PEP-EPackage information
Table 17.PowerSSO-24 mechanical data
Millimeters
Symbol
Min.Typ.Max.
A2.45
A22.152.35
a100.10
b0.330.51
c0.230.32
D10.1010.50
E7.407.60
e0.8
e38.8
F2.3
G0.1
G10.06
H10.110.5
h0.4
k0°8°
L0.550.85
N10º
X4.14.7
Y6.57.1
Doc ID 10826 Rev 523/25
Page 24
Revision historyVND830PEP-E
6 Revision history
Table 18.Document revision history
DateRevisionChanges
04-Oct-20041Initial release.
15-Nov-20042
Mechanical data updating.
PowerSSO-24 thermal characteristics insertion
27-Nov-20043PC board copper area correction.
12-Dec-20054
Electrical characteristics insertion.
Absolute maximum ratings modification.
Updated Figure 17: PowerSSO-24 mechanical data:
– Deleted A (min) value
01-Jul-20095
– Changed A (max) value from 2.47 to 2.45
– Changed A2 (max) value from 2.40 to 2.35
– Changed a1 (max) value from 0.075 to 0.1
– Inserted F and k rows
24/25 Doc ID 10826 Rev 5
Page 25
VND830PEP-E
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