The VND600SP-E is a monolithic device made
using STMicroelectronics™ VIPower™ M0-3
technology. It is intended for driving resistive or
inductive loads with one side connected to
ground. Active V
device against low energy spikes (see ISO7637
transient compatibility table).
This device has two channels in high-side
configuration; each channel has an analog sense
output on which the sensing current is
proportional (according to a known ratio) to the
corresponding load current.
Built-in thermal shutdown and outputs current
limitation protect the chip from overtemperature
and short circuit. Device turns-off in case of
ground pin disconnections.
Table 2.Suggested connections for unused and not connected pins
Connection / pinCurrent senseN.C.OutputInput
FloatingXXX
To ground
Through 1 KΩ
resistor
X
Doc ID 10876 Rev 35/26
Through 10 KΩ
resistor
Page 6
Electrical specificationsVND600SP-E
2 Electrical specifications
Figure 3.Current and voltage conventions
I
S
V
CC
I
I
IN1
V
IN1
I
IN2
V
IN2
INPUT1
CURRENT SENSE 1
INPUT2
CURRENT SENSE 2
OUTPUT1
OUTPUT2
GROUND
I
GND
OUT1
I
SENSE1
I
OUT2
I
SENSE2
V
SENSE2
V
V
V
OUT2
(1)
F1
SENSE1
V
OUT1
V
CC
1) V
= V
- V
Fn
CCn
during reverse battery condition
OUTn
2.1 Absolute maximum ratings
Stressing the device above the rating listed in Tab le 3 may cause permanent damage to the
device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Refer also to the STMicroelectronics sure program and other relevant quality
document.
Table 3.Absolute maximum ratings
SymbolParameterValueUnit
V
CC
-V
- I
GND
I
OUT
I
I
IN
V
CSENSE
CC
R
DC supply voltage41V
Reverse supply voltage-0.3V
DC reverse ground pin current-200mA
Output currentInternally limitedA
Reverse output current-21A
Input current +/- 10mA
Current sense maximum voltage
-3
+15
V
V
6/26Doc ID 10876 Rev 3
Page 7
VND600SP-EElectrical specifications
Table 3.Absolute maximum ratings (continued)
SymbolParameterValueUnit
Electrostatic discharge (Human Body Model:
V
ESD
R=1.5KΩ; C=100pF)
– INPUT
– CURRENT SENSE
–OUTPUT
–V
1. When mounted on a standard single sided FR-4 board with 0.5 cm2 of Cu (at least 35 μm thick).
2. When mounted on a standard single-sided FR-4 board with 6 cm2 of Cu (at least 35 μm thick).
Thermal resistance junction-case (max)1.3°C/W
Thermal resistance junction-ambient (max)51.3
(1)
37
(2)
°C/W
Doc ID 10876 Rev 37/26
Page 8
Electrical specificationsVND600SP-E
2.3 Electrical characteristics
Values specified in this section are for 8 V < V
< 36 V; -40 °C < Tj < 150 °C, unless
CC
otherwise stated. (Per each channel).
Table 5.Power
SymbolParameterTest conditionsMin.Typ. Max.Unit
Operating supply
(1)
V
V
V
OV
V
I
I
I
I
CC
USD
(1)(2)
R
ON
clamp
(1)
I
S
L(off1)
L(off2)
L(off3)
L(off4)
voltage
(1)
Undervoltage shutdown345.5V
Overvoltage shutdown36V
I
=5A; Tj=25°C30mΩ
OUT
On-state resistance
Clamp voltageICC=20mA
=5A; Tj= 150 °C60mΩ
I
OUT
I
=3A; VCC=6V100mΩ
OUT
(2)
Off-state; VCC=13V;
VIN=V
Supply current
Off-state; V
V
IN=VOUT
On-state; V
I
OUT
Off-state output currentVIN=V
Off-state output currentVIN=0V; V
V
Off-state output current
Off-state output current
IN=VOUT
V
CC
V
IN=VOUT
Tj =25°C
=0V
OUT
=13V;
CC
=0V; Tj=25°C
=5V; VCC=13V;
IN
=0A; R
= 0 V050µA
OUT
OUT
=3.9kΩ
SENSE
=3.5V-750µA
=0V;
=13V; Tj =125°C
=0V; VCC=13V;
5.51336V
414855V
1240µA
1225mA
6mA
5µA
3µA
1. Per device.
2. V
Table 6.Protection
clamp
and V
are correlated. Typical difference is 5 V.
OV
(1)
SymbolParameterTest conditionsMin.Typ. Max. Unit
V
= 13 V254070A
CC
5.5 V < V
CC
T
T
HYST
I
DC short circuit current
lim
Thermal shutdown
TSD
temperature
Thermal reset temperature135°C
T
R
Thermal hysteresis715°C
8/26Doc ID 10876 Rev 3
<36V70A
150175200°C
Page 9
VND600SP-EElectrical specifications
Table 6.Protection
(1)
(continued)
SymbolParameterTest conditionsMin.Typ. Max. Unit
V
demag
V
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
Table 7.V
Turn-off output voltage
clamp
Output voltage drop
ON
limitation
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles
- output diode
CC
I
=2A; VIN=0V;
OUT
L=6mH
I
=0.5A
OUT
Tj= -40 °C...+150 °C
-48VCC-
V
-41
V
CC
CC
55
50mV
SymbolParameterTest conditionsMinTypMaxUnit
V
Table 8.Current sense 9 V ≤ VCC≤ 16 V
Forward on voltage -I
F
= 2.6 A; Tj= 150 °C--0.6V
OUT
SymbolParameterTest conditionsMinTypMaxUnit
I
or I
K
I
1
OUT/ISENSE
OUT1
V
SENSE
=0.5A;
OUT2
= 0.5 V; other channels
330044006000
open; Tj= -40 °C...150 °C
I
dK
1/K1
Current sense ratio drift
OUT1
V
SENSE
or I
=0.5A;
OUT2
= 0.5 V; other channels
-10+10%
open; Tj= -40 °C...150 °C
V
K
dK
2/K2
K
dK
3/K3
V
SENSE1,2
V
SENSEH
I
2
OUT/ISENSE
Current sense ratio drift
I
3
OUT/ISENSE
Current sense ratio drift
Max analog sense output
voltage
Analog sense output
voltage in overtemperature
condition
I
OUT1
or I
OUT2
=5A; V
SENSE
=4V;
other channels open; Tj=-40°C
= 25 °C...150 °C
T
j
I
OUT1
or I
OUT2
=5A; V
SENSE
=4V;
other channels open;
= - 40 °C...150 °C
T
j
I
or I
OUT1
other channels open; T
= 25 °C...150 °C
T
j
or I
I
OUT1
OUT2
OUT2
=15A; V
=15A; V
SENSE
=- 40 °C
j
SENSE
=4V;
=4V;
other channels open;
T
= -40 °C...150 °C
j
V
CC
R
SENSE
V
CC
R
SENSE
V
CC
= 5.5 V; I
=10kΩ
>8V, I
OUT1,2
=10kΩ
=13V; R
=2.5A;
OUT1,2
=5A;
=3.9kΩ5.5V
SENSE
4200
4400
4900
4900
6000
5750
-6+6%
4200
4400
4900
4900
5500
5250
-6+6%
2V
4V
Doc ID 10876 Rev 39/26
Page 10
Electrical specificationsVND600SP-E
Table 8.Current sense 9 V ≤ VCC≤ 16 V (continued)
SymbolParameterTest conditionsMinTypMaxUnit
Analog sense output
R
VSENSEH
impedance in
overtemperature condition
t
DSENSE
1. Current sense signal delay after positive input slope.
Current sense delay
response
Table 9.Switching (VCC=13V)
=13V; Tj>T
V
CC
All channels open
to 90% I
SymbolParameterTest conditionsMinTypMax Unit
t
d(on)
t
d(off)
(dV
OUT
(dV
OUT
Table 10.Logic input (channel 1, 2)
Turn-on delay time RL=2.6Ω (seeFigure 4)- 30-µs
Turn-on delay time RL=2.6Ω (seeFigure 4)- 30-µs
/dt)onTurn-on voltage slope RL=2.6Ω (see Figure 4)-Figure 15-V/µs
/dt)
Turn-off voltage slope RL=2.6Ω (see Figure 4)-Figure 16-V/µs
Table 12.Electrical transient requirements on VCC pin (part 1)
ISO T/R 7637/1
Test levels
test pulse
IIIIIIIV
1-25 V-50 V-75 V-100 V2 ms, 10 Ω
2+25 V+50 V+75 V+100 V0.2 ms, 10 Ω
3a-25 V-50 V-100 V-150 V0.1 µs, 50 Ω
3b+25 V+50 V+75 V+100 V0.1 µs, 50 Ω
4-4 V-5 V-6 V-7 V100 ms, 0.01
5+26.5 V+46.5 V+66.5 V+86.5 V400 ms, 2
Table 13.Electrical transient requirements on VCC pin (part 2)
ISO T/R 7637/1
Test pulse
IIIIIIIV
Test levels results
1CCCC
2CCCC
3aCCCC
3bCCCC
4CCCC
Delays and
impedance
Ω
Ω
5C E E E
Table 14.Electrical transient requirements on VCC pin (part 3)
Class Contents
C
All functions of the device are performed as designed after exposure to
disturbance.
One or more functions of the device is not performed as designed after exposure
E
to disturbance and cannot be returned to proper operation without replacing the
device.
Doc ID 10876 Rev 313/26
Page 14
Electrical specificationsVND600SP-E
Figure 6.Waveforms
NORMAL OPERATION
INPUT
n
LOAD CURRENT
SENSE
n
V
CC
INPUT
n
LOAD CURRENT
SENSE
n
V
CC
INPUT
n
LOAD CURRENT
SENSE
n
n
UNDERVOLTAGE
V
V
USD
n
USDhyst
OVERVOLTAGE
V
OV
V
V
< V
CC
OV
n
> V
CC
OV
INPUT
n
LOAD CURRENT
LOAD VOLTAGE
SENSE
n
INPUT
n
LOAD VOLTAGE
LOAD CURRENT
SENSE
n
T
j
INPUT
n
LOAD CURRENT
SENSE
n
SHORT TO GROUND
n
n
SHORT TO V
n
n
<Nominal
T
TSD
T
R
n
OVERTEMPERATURE
CC
<Nominal
I
SENSE
=
V
SENSEH
R
SENSE
14/26Doc ID 10876 Rev 3
Page 15
VND600SP-EElectrical specifications
2.4 Electrical characteristics curves
Figure 7.Off-state output currentFigure 8.High level input current
IL(off1) (uA)
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
-50 -250255075 100 125 150 175
Off state
Vcc=36V
Vin=Vout=0V
Tc (°C)
Figure 9.Input low levelFigure 10. Input high level
Vil (V)
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
-50 -250255075 100 125 150 175
Tc (°C)
Iih (uA)
5
4.5
3.5
2.5
1.5
0.5
Vin=3.25V
4
3
2
1
0
-50 -250255075 100 125 150 175
Tc (°C)
Vih (V)
3.6
3.4
3.2
3
2.8
2.6
2.4
2.2
2
-50 - 25025 5075 100 125 150 175
Tc (°C)
Figure 11. Input clamp voltageFigure 12. Input hysteresis voltage
Vicl (V)
8
7.8
7.6
7.4
7.2
6.8
6.6
6.4
6.2
Iin=1mA
7
6
-50 -250255075 100 125 150 175
Tc (°C)
Vhyst (V)
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
-50 -250255075 100 125 150 175
Tc (°C)
Doc ID 10876 Rev 315/26
Page 16
Electrical specificationsVND600SP-E
Figure 13. Overvoltage shutdownFigure 14. I
Vov (V)
50
48
46
44
42
40
38
36
34
32
30
-50 -250255075 100 125 150 175
Ilim (A)
80
70
60
50
40
30
20
10
0
-50 -250255075 100 125 150 175
Tc (°C)
Figure 15. Turn-on voltage slopeFigure 16. Turn-off voltage slope
dVout/dt(on) (V/ms)
750
700
650
600
550
500
450
400
350
300
250
Vcc=13V
Rl=2.6Ohm
-50 -250255075 100 125 150 175
dVout/dt(off) (V/ms)
500
450
400
350
300
250
200
150
100
50
0
-50 -250255075 100 125 150 175
Tc (ºC)
vs T
LIM
Vcc=13V
Vcc=13V
Rl=2.6Ohm
case
Tc (°C)
Tc (ºC)
Figure 17. On-state resistance vs T
case
Figure 18. On-state resistance vs V
Ron (mOhm)
100
90
80
70
60
50
40
30
20
10
0
-75 -50 -25025 50 75 100 125 150 175
Iout=5A
Vcc=8V & 36V
Tc (°C)
16/26Doc ID 10876 Rev 3
CC
Ron (mOhm)
80
70
60
50
40
30
20
10
0
5 10152025303540
Iout=5A
Tc= 150°C
Tc= 25°C
Tc= - 40°C
Vcc (V)
Page 17
VND600SP-EApplication information
3 Application information
Figure 19. Application schematic
+5V
R
prot
R
μ
C
prot
R
prot
INPUT1
CURRENT SENSE1
INPUT2
V
CC
D
ld
OUTPUT1
R
SENSE1
R
prot
CURRENT SENSE2
R
SENSE2
GND
R
GND
GND
V
OUTPUT2
D
GND
3.1 GND protection network against reverse battery
3.1.1 Solution 1: resistor in the ground line (R
This can be used with any type of load.
The following is an indication on how to dimension the R
1.R
2. R
where -I
maximum rating section of the device’s datasheet.
Power dissipation in R
P
= (-VCC)2/ R
D
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I
maximum on-state currents of the different devices.
≤ 600 mV / I
GND
≥ (-VCC) / (-I
GND
is the DC reverse ground pin current and can be found in the absolute
GND
GND
S(on)max
)
GND
(when V
GND
< 0: during reverse battery situations) is:
CC
GND
only)
resistor.
GND
S(on)max
becomes the sum of the
Please note that if the microprocessor ground is not shared by the device ground then the
R
produces a shift (I
GND
S(on)max
* R
) in the input thresholds and the status output
GND
values. This shift varies depending on how many devices are ON in the case of several
high-side drivers sharing the same R
GND
.
If the calculated power dissipation leads to a large resistor or several devices have to share
the same resistor then ST suggests to utilize solution 2 (see Section 3.1.2).
Doc ID 10876 Rev 317/26
Page 18
Application informationVND600SP-E
3.1.2 Solution 2: diode (D
A resistor (R
= 1 kΩ) should be inserted in parallel to D
GND
) in the ground line
GND
inductive load.
This small signal diode can be safely shared amongst several different HSDs. Also in this
case, the presence of the ground network produces a shift (∼600 mV) in the input threshold
and in the status output values if the microprocessor ground is not common to the device
ground. This shift does not vary if more than one HSD shares the same diode/resistor
network.
Series resistor in INPUT and STATUS lines are also required to prevent that, during battery
voltage transient, the current exceeds the absolute maximum rating.
Safest configuration for unused INPUT and STATUS pin is to leave them unconnected, while
unused SENSE pin has to be connected to ground pin.
3.2 Load dump protection
Dld is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds the
V
max DC rating. The same applies if the device is subject to transients on the VCC line
CC
that are greater than the ones shown in Ta bl e 1 2.
3.3 MCU I/Os protection
if the device drives an
GND
If a ground protection network is used and negative transient are present on the VCC line,
the control pins are pulled negative. ST suggests to insert a resistor (R
) in line to prevent
prot
the microcontroller I/Os pins to latch-up.
The value of these resistors is a compromise between the leakage current of microcontroller
and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of
microcontroller I/Os.
-V
CCpeak/Ilatchup
≤ R
prot
≤ (V
OHµC-VIH-VGND
) / I
IHmax
Calculation example:
For V
CCpeak
5kΩ ≤ R
= -100 V and I
≤ 65 kΩ.
prot
latchup
≥ 20 mA; V
OHµC
≥ 4.5 V
Recommended values:
R
=10 kΩ.
prot
18/26Doc ID 10876 Rev 3
Page 19
VND600SP-EApplication information
3.4 PowerSO-10 maximum demagnetization energy
(V
= 13.5 V)
CC
Figure 20. Maximum turn- off current versus load inductance
(1)
A: A single pulse at T
B: Repetitive pulse at T
C: Repetitive pulse at T
jstart
jstart
jstart
= 150 °C
= 100 °C
=125°C
Condition:
V
= 13.5 V
CC
VIN, I
L
1. Values are generated with R
In case of repetitive pulses, T
the temperature specified above for curves B and C.
Demagnetization
=0
Ω
L
(at beginning of each demagnetization) of every pulse must not exceed
jstart
Demagnetization
Demagnetization
t
Doc ID 10876 Rev 319/26
Page 20
Package and PCB thermal dataVND600SP-E
4 Package and PCB thermal data
4.1 PowerSO-10 thermal data
Figure 21. PowerSO-10 PC board
1. Layout condition of R
Cu thickness = 35 µm, Copper areas: from minimum pad lay-out to 8 cm2).
Figure 22. R
thj-amb
RTHj_amb (°C/W)
and Zth measurements (PCB FR4 area= 58 mm x 58 mm, PCB thickness=2 mm,
th
vs PCB copper area in open box free air condition
(1)
55
50
Tj-Tamb=50°C
45
40
35
30
0246810
PCB Cu heatsink area (cm^2)
20/26Doc ID 10876 Rev 3
Page 21
VND600SP-EPackage and PCB thermal data
Figure 23. PowerSO-10 thermal impedance junction ambient single pulse
Equation 1
Z
THδ
where
: pulse calculation formula
RTHδ Z
THtp
1 δ–()+⋅=
δtpT⁄=
Figure 24. Thermal fitting model of a double channel HSD in PowerSO-10
Tj_1
Pd1
Tj_2
C1
C1C2
R1
Pd2
C3C4
R3R1R6R5R2
R2
R4
T_amb
C5C6C2
Doc ID 10876 Rev 321/26
Page 22
Package and PCB thermal dataVND600SP-E
Table 15.Thermal parameter
Area/island (cm2)Footprint6
R1 (°C/ W)0.05
R2 (°C/ W)0.3
R3 (°C/ W)0.3
R4 (°C/ W)0.8
R5 (°C/ W)12
R6 (°C/ W)3722
C1 (W.s/ °C)0.001
C2 (W.s /°C)5.00E-03
C3 (W.s/ °C)0.02
C4 (W.s/ °C)0.3
C5 (W.s/ °C)0.75
C6 (W.s/ °C)35
22/26Doc ID 10876 Rev 3
Page 23
VND600SP-EPackage and packing information
5 Package and packing information
5.1 ECOPACK® packages
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
5.2 PowerSO-10 mechanical data
Figure 25. PowerSO-10 package dimensions
10
HE
h
A
F
A1
1
eB
0.25
D
= =
D1
= =
E2
DETAIL "A"
B
0.10 A
E
SEATING
PLANE
A
C
B
E4
SEATING
PLANE
A1
DETAIL "A"
L
α
Doc ID 10876 Rev 323/26
Page 24
Package and packing informationVND600SP-E
Table 16.PowerSO-10 mechanical data
Millimeters
Dim.
Min.Typ.Max.
A3.353.65
(1)
A
A100.10
B0.400.60
(1)
B
C0.350.55
(1)
C
D9.409.60
D17.407.60
E9.309.50
3.43.6
0.370.53
0.230.32
E27.207.60
(1)
E2
E45.906.10
(1)
E4
e1.27
F1.251.35
(1)
F
H13.8014.40
(1)
H
h0.50
L1.201.80
(1)
L
a0°8°
(1)
α
1. Muar only POA P013P.
7.307.50
5.906.30
1.201.40
13.8514.35
0.801.10
2°8°
24/26Doc ID 10876 Rev 3
Page 25
VND600SP-EPackage and packing information
5.3 PowerSO-10 packing information
Figure 26. PowerSO-10 suggested pad layout and tube shipment (no suffix)
14.6 - 14.9
10.8 - 11
6.30
1
2
3
9.5
4
5
0.67 - 0.73
10
0.54 - 0.6
9
8
7
1.27
6
C
A
All dimensions are in mm.
Casablanca50100053210.4 16.4 0.8
Figure 27. Tape and reel shipment (suffix “TR”)
B
Base Q.ty Bulk Q.ty Tube length (± 0.5) A B C (± 0.1)
Muar5010005324.9 17.2 0.8
REEL DIMENSIONS
Base Q.ty600
Bulk Q.ty600
A (max)330
B (min)1.5
C (± 0.2)13
F20.2
G (+ 2 / -0)24.4
N (min)60
T (max)30.4
All dimensions are in mm.
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
Changed Features list.
Reformatted entire document. No content change.
Updated Features list.
Updated following tables:
– Ta b le 5 : Po w er
≤
V
≤
– Table 8: Current sense 9 V
CC
16 V
26/26Doc ID 10876 Rev 3
Page 27
VND600SP-E
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
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OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
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