1. Per channel with all the output pins connected to the
PCB.
DS(on)
I
OUT
(1)
V
CC
36 V
VND600P-E
■ CMOS-compatible input
■ Proportional load current sense
■ Shorted load protection
■ Undervoltage and overvoltage shutdown
■ Overvoltage clamp
■ Thermal shutdown
■ Current limitation
■ Protection against loss of ground and loss of
V
CC
■
Very low standby power dissipation
■ Reverse battery protected
SO-16L
Description
The VND600P-E is a double chip device designed
in STMicroelectronics™ VIPower™ M0-3
technology. The device is intended for driving any
type of load with one side connected to ground.
The active V
device against low energy spikes (see ISO7637
transient compatibility table).
Active current limitation combined with thermal
shutdown and automatic restart protect the device
against overload.
The device integrates an analog current sense
output which delivers a current proportional to the
load current. The device automatically turns off in
the case where the ground pin becomes
disconnected.
Table 2.Suggested connections for unused and not connected pins
Connection / pinCurrent senseN.C.OutputInput
FloatingXXX
To ground
Through 1 KΩ
resistor
X
Through 10 KΩ
Doc ID 17749 Rev 15/26
resistor
Page 6
Electrical specificationsVND600P-E
2 Electrical specifications
Figure 3.Current and voltage conventions
I
S1
V
CC1
I
1. V
IN1
V
IN1
I
IN2
V
IN2
= V
- V
Fn
CCn
during reverse battery condition.
OUTn
INPUT1
INPUT2
GROUND1
2.1 Absolute maximum ratings
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to Absolute maximum rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics sure
program and other relevant quality document.
Table 3.Absolute maximum ratings
(1)
I
GND1
V
CC2
OUTPUT1
OUTPUT2
GROUND2
V
CC1
CURRENT SENSE 1
CURRENT SENSE 2
I
GND2
I
OUT1
I
SENSE1
I
OUT2
I
SENSE2
V
SENSE2
V
V
V
OUT2
I
S2
(*)
F1
SENSE1
V
OUT1
V
CC2
SymbolParameterValueUnit
V
- V
- I
I
OUT
- I
I
V
CSENSE
CC
gnd
OUT
IN
DC supply voltage41V
Reverse DC supply voltage- 0.3V
CC
DC reverse ground pin current- 200mA
DC output currentInternally limitedA
Reverse DC output current - 21A
DC input current+/- 10mA
Current Sense maximum voltage
Electrostatic discharge
(human body model: R = 1.5 KΩ; C = 100 pF)
1. When mounted on a standard single-sided FR-4 board with 0.5cm2 of Cu (at least 35 µm thick) connected
to all VCC pins. Horizontal mounting and no artificial air flow.
2. When mounted on a standard single-sided FR-4 board with 6cm2 of Cu (at least 35 µm thick) connected to
all VCC pins. Horizontal mounting and no artificial air flow.
Thermal resistance junction-lead 15°C/W
Thermal resistance junction-ambient65
(1)
48
(2)
°C/W
Doc ID 17749 Rev 17/26
Page 8
Electrical specificationsVND600P-E
2.3 Electrical characteristics
Values specified in this section are for 8 V < V
< 36 V;-40 °C < T
CC
< 150 °C, unless
j
otherwise stated.
Table 5.Power
SymbolParameterTest conditionsMin.Typ.Max. Unit
V
V
V
CLAMP
I
I
I
I
1. V
V
OV
R
L(off1)
L(off2)
L(off3)
L(off4)
Operating supply voltage5.51336V
CC
Undervoltage shutdown345.5V
USD
(1)
Overvoltage shutdown36V
I
= 5 A; Tj = 25 °C; 35mΩ
OUT
On-state resistance
ON
(
Clamp voltageI
1)
I
Supply current
S
Off-state output currentV
Off-state output currentV
Off-state output current
Off-state output current
and VOV are correlated. Typical difference is 5 V.
CLAMP
= 5 A; Tj = 150 °C; 70mΩ
I
OUT
= 3 A; V
I
OUT
= 20 mA414855V
CC
Off-state; V
V
= V
IN
OUT
Off-state; V
V
= V
IN
OUT
On-state; V
I
= 0 A; R
OUT
= V
IN
OUT
= 0V; V
IN
V
= V
IN
OUT
= 125 °C
T
j
V
= V
IN
OUT
= 25 °C
T
j
= 6 V120mΩ
CC
= 13 V;
CC
= 0 V
= 13 V;
CC
= 0 V; Tj = 25 °C
= 13V; V
CC
SENSE
= 5 V;
IN
= 3.9 kΩ
= 0 V050µA
= 3.5 V-750µA
OUT
= 0 V; V
= 0 V; V
CC
CC
= 13 V;
= 13 V;
1240µA
1225µA
6mA
5µA
3µA
Table 6.Switching (VCC=13V)
SymbolParameterTest conditionsMin.Typ. Max. Unit
t
d(on)
t
d(off)
dV
OUT
dV
OUT
Table 7.VCC output diode
Turn-on delay time RL = 2.6 Ω (see Figure 4)30µs
Turn-off delay time RL = 2.6 Ω (see Figure 4)30µs
/dt
Turn-on voltage slope RL = 2.6 Ω (see Figure 4)See Figure 10V/µs
(on)
/dt
Turn-off voltage slope RL = 2.6 Ω (see Figure 4)See Figure 12V/µs
(off)
SymbolParameterTest conditionsMin.Typ. Max. Unit
V
F
Forward on voltage-I
= 2.3 A; Tj = 150 °C——0.6V
OUT
8/26Doc ID 17749 Rev 1
Page 9
VND600P-EElectrical specifications
Table 8.Logic inputs
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
V
V
I(hyst)
V
Table 9.Current sense (9 V ≤ VCC ≤ 16 V)
Input low-level voltage1.25V
IL
Low-level input currentV
I
IL
Input high-level voltage3.25V
IH
I
High-level input currentV
IH
= 1.25 V1µA
IN
= 3.25 V10µA
IN
Input hysteresis voltage0.5V
I
= 1 mA66.88V
Input clamp voltage
ICL
IN
I
= - 1 mA-0.7V
IN
SymbolParameterTest conditionsMin.Typ.Max.Unit
I
K
dK
1/K1
K
dK
2/K2
K
dK
3/K3
V
SENSE
V
SENSEH
I
1
OUT/ISENSE
Current sense ratio drift
I
2
OUT/ISENSE
Current sense ratio drift
I
3
OUT/ISENSE
Current sense ratio drift
Max analog sense output
voltage
Sense voltage in
overtemperature condition
= 0.5 A; V
OUT
Tj = -40°C...150°C
I
= 0.5A; V
OUT
Tj= -40°C...150°C
I
= 5 A; V
OUT
SENSE
Tj = - 40 °C
= 25 °C...150 °C
T
j
I
= 5 A; V
OUT
= -40°C...150°C
T
j
I
= 15 A; V
OUT
= -40 °C
T
j
= 25°C...150 °C
T
j
I
= 15 A; V
OUT
= -40°C...150°C
T
j
V
= 5.5 V; I
CC
R
SENSE
V
> 8 V, I
CC
R
SENSE
V
= 13 V; R
CC
SENSE
OUT
= 10 kΩ
OUT
= 10 kΩ
= 0.5 V;
SENSE
SENSE
= 0.5V;
3300 44006000
- 10+ 10%
= 4 V;
4200
4900
4400
4900
= 4 V;
= 4 V;
SENSE
= 4 V;
SENSE
= 2.5 A;
= 5 A;
= 3.9 kΩ5.5V
SENSE
- 6+ 6%
4200
4900
4400
4900
- 6+ 6%
2V
4V
6000
5750
5500
5250
Analog sense output
R
VSENSEH
impedance in
overtemperature condition
t
DSENSE
1. Current sense signal delay after positive input slope.
Current sense delay
response
V
= 13 V; Tj > T
CC
output open
To 9 0 % I
Doc ID 17749 Rev 19/26
SENSE
(1)
TSD
;
400Ω
500µs
Page 10
Electrical specificationsVND600P-E
Table 10.Protections
(1)
SymbolParameterTest conditionsMin.Typ.Max.Unit
T
TSD
T
T
hyst
I
lim
V
demag
V
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device operates under
abnormal conditions this software must limit the duration and number of activation cycles.
Table 11.Truth table
Shutdown temperature150175200°C
Reset temperature135°C
R
Thermal hysteresis715°C
V
= 13 V254070A
Current limitation
Turn-off output clamp
voltage
Output voltage drop
ON
limitation
CC
5V < V
I
OUT
V
IN
I
OUT
= -40 °C...150 °C
T
j
< 36 V70A
CC
= 2 A;
= 0 V; L = 6 mH
= 0.5 A;
V
CC
- 41 V
- 48 V
CC
50mV
CC
- 55V
ConditionsInputOutputSense
Normal operation
Overtemperature
Undervoltage
Overvoltage
Short circuit to GND
Short circuit to V
CC
L
H
L
H
L
H
L
H
L
H
H
L
H
L
H
L
L
L
L
L
L
L
L
L
H
H
Nominal
V
SENSEH
(T
(T
j>TTSD
< Nominal
0
0
0
0
0
0
0
j<TTSD
) V
0
) 0
SENSEH
Negative output voltage clampLL0
10/26Doc ID 17749 Rev 1
Page 11
VND600P-EElectrical specifications
Table 12.Electrical transient requirements
ISO T/R
Test level
7637/1
Test pulse
1- 25V
2+ 25V
3a- 25 V
3b+ 25 V
4- 4V
5+ 26.5 V
1. All functions of the device are performed as designed after exposure to disturbance.
2. One or more functions of the device is not performed as designed after exposure and cannot be returned to
proper operation without replacing the device.
IIIIIIIVDelays and impedance
(1)
(1)
(1)
(1)
(1)
(1)
- 50 V
+ 50 V
- 50 V
+ 50 V
- 5 V
+ 46.5 V
(1)
(1)
(1)
(1)
(1)
(2)
- 75 V
+ 75 V
- 100 V
+ 75 V
- 6 V
+ 66.5 V
(1)
(1)
(1)
(1)
(1)
(2)
- 100 V
+ 100 V
- 150 V
+ 100 V
- 7 V
+ 86.5 V
(1)
(1)
(1)
(1)
(1)
(2)
2ms, 10Ω
0.2 ms, 10 Ω
0.1 µs, 50 Ω
0.1 µs, 50 Ω
100 ms, 0.01 Ω
400 ms, 2 Ω
Figure 4.Switching characteristics
V
OUT
90%
t
f
dV
OUT
/dt
(off)
t
dV
I
SENSE
OUT
80%
/dt
(on)
t
90%
r
10%
t
t
d(on)
DSENSE
t
d(off)
INPUT
t
t
Doc ID 17749 Rev 111/26
Page 12
Electrical specificationsVND600P-E
Figure 5.I
I
OUT/ISENSE
6500
6000
5500
5000
4500
4000
3500
3000
0246810121416
OUT/ISENSE
versus I
OUT
max.Tj=25...150°C
min.Tj=25...150°C
I
OUT
max.Tj=-40°C
typical value
min.Tj=-40°C
(A)
12/26Doc ID 17749 Rev 1
Page 13
VND600P-EElectrical specifications
Figure 6.Waveforms
NORMAL OPERATION
INPUT
LOAD CURRENT
SENSE
UNDERVOLTAGE
V
CC
INPUT
LOAD CURRENT
SENSE
V
CC
INPUT
LOAD CURRENT
SENSE
V
USD
V
VCC > V
OV
USD
V
USDhyst
OVERVOLTAGE
V
OVhys t
INPUT
LOAD CURRENT
LOAD VOLTAGE
SENSE
INPUT
LOAD VOLTAGE
LOAD CURRENT
SENSE
T
j
INPUT
LOAD CURRENT
SENSE
SHORT TO GROUND
SHORT TO V
<Nominal
T
TSD
T
R
OVERTEMPERATURE
CC
<Nominal
I
SENSE
=
V
SENSEH
R
SENSE
Doc ID 17749 Rev 113/26
Page 14
Electrical specificationsVND600P-E
2.4 Electrical characteristics curves
Figure 7.Off-state output currentFigure 8.High-level input current
Figure 9.Input clamp voltageFigure 10. Turn-on voltage slope
Figure 11. Overvoltage shutdownFigure 12. Turn-off voltage slope
IL(off1) (uA)
2.5
2.25
2
1.75
1.5
1.25
1
0.75
0.5
0.25
0
-50 -250255075 100 125 150 175
Off state
Vcc=36V
Vin=Vout=0V
Tc (°C)
Vicl (V)
10
9.5
9
8.5
8
7.5
7
6.5
6
5.5
5
Iin=1mA
-50 -250255075 100 125 150 175
Tc ( °C )
Vov (V)
50
48
46
44
42
40
38
36
34
32
30
-50 -250255075 100 125 150 175
Tc (°C)
Iih (uA)
5
4.5
3.5
2.5
1.5
0.5
Vin=3.25V
4
3
2
1
0
-50 -250255075 100 125 150 175
Tc (°C)
dVout/dt(on) (V/ms)
700
650
600
550
500
450
400
350
300
250
-50 -250255075 100 125 150 175
Vcc=13V
Rl=1.3Ohm
Tc (ºC)
dVout/dt(off) (V/ms)
600
550
500
450
400
350
300
250
200
Ri=6.5Ohm
-50 -25025507 5 100 125 150 175
Tc (°C)
14/26Doc ID 17749 Rev 1
Page 15
VND600P-EElectrical specifications
Figure 13. I
Ilim (A)
20
18
16
14
12
10
8
6
4
2
0
-50 -250255075 100 125 150 175
Figure 15. Input high-levelFigure 16. Input hysteresis voltage
Vih (V)
3.6
3.4
3.2
3
2.8
2.6
2.4
2.2
2
-50 -250255075 100 125 150 175
vs T
LIM
Vcc=13V
case
Tc (°C)
Tc (°C)
Figure 14. On-state resistance vs V
Ron (mOhm)
80
70
60
50
40
30
20
10
0
5 10152025303540
Iout=5A
Tc= 150°C
Tc= 25°C
Tc= - 40°C
Vcc (V)
Vhyst (V)
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
-50 -250255075 100 125 150 175
Tc (°C)
CC
Figure 17. On-state resistance vs T
Ron (mOhm)
100
90
80
70
60
50
40
30
20
10
0
-75 -50 -25025 50 75 100 125 150 175
Iout=5A
Vcc=8V & 36V
Tc (°C)
case
Figure 18. Input low-level
Vil (V)
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
-50 -250255075 100 125 150 175
Tc (°C)
Doc ID 17749 Rev 115/26
Page 16
Application informationVND600P-E
3 Application information
Figure 19. Application schematic
+5V
R
prot
R
prot
R
prot
μ
C
R
prot
INPUT1
C. SENSE 1
INPUT2
C. SENSE 2
V
V
CC1
CC2
D
ld
OUTPUT1
OUTPUT2
GND2
R
GND
D
GND
R
SENSE1,2
GND1
V
GND
3.1 GND protection network against reverse battery
3.1.1 Solution 1: resistor in the ground line (R
This can be used with any type of load.
The following is an indication on how to dimension the R
1.R
2. R
where -I
maximum rating section of the device datasheet.
Power Dissipation in R
P
= (-VCC)2/ R
D
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I
maximum on-state currents of the different devices.
≤ 600 mV / (I
GND
≥ (-VCC) / (-I
GND
is the DC reverse ground pin current and can be found in the absolute
GND
GND
S(on)max
GND
GND
)
)
(when V
< 0: during reverse battery situations) is:
CC
GND
only)
resistor.
GND
S(on)max
becomes the sum of the
Please note that if the microprocessor ground is not shared by the device ground then the
R
produces a shift (I
GND
S(on)max
* R
) in the input thresholds and the status output
GND
values. This shift varies depending on how many devices are ON in the case of several highside drivers sharing the same R
GND
.
If the calculated power dissipation leads to a large resistor or several devices have to share
the same resistor then ST suggests to utilize Solution 2 (see below).
16/26Doc ID 17749 Rev 1
Page 17
VND600P-EApplication information
3.1.2 Solution 2: diode (D
A resistor (R
= 1 kΩ) should be inserted in parallel to D
GND
) in the ground line
GND
inductive load.
This small signal diode can be safely shared amongst several different HSDs. Also in this
case, the presence of the ground network produces a shift (≈600 mV) in the input threshold
and in the status output values if the microprocessor ground is not common to the device
ground. This shift not varies if more than one HSD shares the same diode/resistor network.
Series resistor in INPUT and STATUS lines are also required to prevent that, during battery
voltage transient, the current exceeds the absolute maximum rating.
Safest configuration for unused INPUT and STATUS pin is to leave them unconnected.
3.2 Load dump protection
Dld is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds the
V
max DC rating. The same applies if the device is subject to transients on the VCC line
CC
that are greater than the ones shown in the ISO 7637-2: 2004(E) table.
3.3 MCU I/Os protection
If a ground protection network is used and negative transient are present on the VCC line,
the control pins are pulled negative. ST suggests to insert a resistor (R
the microcontroller I/O pins to latch-up.
if the device drives an
GND
) in line to prevent
prot
The value of these resistors is a compromise between the leakage current of microcontroller
and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of
microcontroller I/Os.
-V
CCpeak/Ilatchup
≤ R
prot
≤ (V
OHµC-VIH-VGND
) / I
IHmax
Calculation example:
For V
CCpeak
5kΩ ≤ R
Recommended values: R
= -100 V and I
≤ 65 kΩ.
prot
latchup
=10 kΩ.
prot
≥ 20 mA; V
OHµC
≥ 4.5 V
Doc ID 17749 Rev 117/26
Page 18
Application informationVND600P-E
3.4 Maximum demagnetization energy (VCC = 13.5 V)
Figure 20. Maximum turn-off current versus inductance
LMAX (A)
I
100
A
B
C
10
1
0.010.1110100
L(mH)
(1)
A: T
B: T
C: T
VIN, I
1. Values are generated with RL =0 Ω.
In case of repetitive pulses, T
the temperature specified above for curves A and B.
= 150°C single pulse
jstart
= 100°C repetitive pulse
jstart
= 125°C repetitive pulse
jstart
L
DemagnetizationDemagnetizationDemagnetization
(at beginning of each demagnetization) of every pulse must not exceed
jstart
t
18/26Doc ID 17749 Rev 1
Page 19
VND600P-EPackage and PCB thermal data
4 Package and PCB thermal data
4.1 SO-16L thermal data
Figure 21. SO-16L PC board
1. Layout condition of R
Cu thickness = 35 µm, Copper areas: 0.5 cm2, 6 cm2).
Figure 22. R
70
thj-amb
RTH j-amb (°C/W)
and Zth measurements (PCB FR4 area = 41 mm x 48 mm, PCB thickness = 2 mm,
th
vs PCB copper area in open box free air condition
(1)
65
60
55
50
45
40
01234567
PCB Cu heatsink area (cm^2)
Doc ID 17749 Rev 119/26
Page 20
Package and PCB thermal dataVND600P-E
Figure 23. Thermal impedance junction ambient single pulse
ZTH (°C/W)
1000
100
10
1
0.1
0.01
0.00010.0010.010.11101001000
Time (s)
Equation 1
Z
THδ
where
: pulse calculation formula
RTHδ Z
THtp
1 δ–()+⋅=
δtpT⁄=
Footprint
6 cm
2
Figure 24. Thermal fitting model of a quad channel HSD in SO-16L
Tj_1
Pd1
Tj_2
20/26Doc ID 17749 Rev 1
C1
C1C2
R1
Pd2
C3C4
R3R1R6R5R2
R2
C5C6C2
R4
T_amb
Page 21
VND600P-EPackage and PCB thermal data
Table 13.Thermal parameters
Area / island (cm2)Footprint6
R1 (°C/W)0.05
R2 (°C/W)0.3
R3 (°C/W)2.2
R4 (°C/W)12
R5 (°C/W)15
R6 (°C/W)3722
C1 (W.s/°C)0.001
C2 (W.s/°C)5E-03
C3 (W.s/°C)0.02
C4 (W.s/°C)0.3
C5 (W.s/°C)1
C6 (W.s/°C)35
Doc ID 17749 Rev 121/26
Page 22
Package and packing informationVND600P-E
5 Package and packing information
5.1 ECOPACK® packages
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
.
®
is an ST trademark.
Figure 25. SO-16L package dimensions
22/26Doc ID 17749 Rev 1
Page 23
VND600P-EPackage and packing information
Table 14.SO-16L mechanical data
mm.
DIM.
Min.Typ.Max.
A2.65
a10.10.2
a22.45
b0.350.49
b10.230.32
C0.5
c145° (typ.)
D10.110.5
E10.010.65
e1.27
e38.89
F7.47.6
L0.51.27
M0.75
S8° (max.)
Doc ID 17749 Rev 123/26
Page 24
Package and packing informationVND600P-E
5.2 SO-16L packing information
Figure 26. SO-16L tube shipment (no suffix)
Base Q.ty50
Bulk Q.ty1000
C
B
A
Figure 27. SO-16L tape and reel shipment (suffix “TR”)
Tube length (± 0.5)532
A3.5
B13.8
C (± 0.1)0.6
All dimensions are in mm.
Reel dimensions
Base Q.ty1000
Bulk Q.ty1000
A (max)330
B (min)1.5
C (± 0.2)13
F20.2
G (+ 2 / -0)16.4
N (min)60
T (max)22.4
Tape dimensions
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
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