Datasheet VND5N07 Datasheet (ST)

Features

VND5N07

OMNIFET II

fully autoprotected Power MOSFET

Max. on-state resistance (per ch.) R

Current limitation (typ) I

Drain-Source clamp voltage V

■ Linear current limitation

■ Thermal shutdown

■ Short circuit protection

■ Integrated clamp

■ Low current drawn from input pin

■ Diagnostic feedback through input pin

■ Esd protection

■ Direct access to the gate of the power mosfet

DS (on)

LIMH

CLAMP

0.2Ω

5 A

70V

(analog driving)

■ Compatible with standard Power MOSFET

DPAK

TO-252

3

1

IPAK

TO-251

3

2

1

ISOWATT200

SOT-82FM

Description

The VND5N07 is a monolithic device designed in
STMicroelectronics VIPower M0 technology,
intended for replacement of standard Power
MOSFETs from DC to 50KHz applications. Built in
thermal shutdown, linear current limitation and
overvoltage clamp protect the chip in harsh
environments.

Fault feedback can be detected by monitoring the
voltage at the input pin.

Table 1. Device summary

Order codes

Package

Tube Tape and reel

DPAK VND5N07 VND5N0713TR

IPAK VND5N07-1

ISOWATT220 VNP5N07FI

SOT-82FM VNK5N07FM

December 2008 Rev 3 1/24

www.st.com

24

Contents VND5N07

Contents

1 Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

2.3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

2.4 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

3 Protection features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

3.1 Overvoltage clamp protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

3.2 Linear current limiter circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

3.3 Overtemperature and short circuit protection . . . . . . . . . . . . . . . . . . . . . . 17

3.4 Status feedback . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

4 Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

4.1 ECOPACK® packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

4.2 DPAK mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

4.3 IPAK mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

4.4 ISOWATT220 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

4.5 SOT-82FM mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

2/24

VND5N07 List of tables

List of tables

Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table 2. Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Table 3. Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Table 4. Off . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Table 5. On . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Table 6. Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Table 7. Switching . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Table 8. Source Drain diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Table 9. Protections (-40°C < Tj < 150°C, unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . 8

Table 10. DPAK mechanical data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Table 11. IPAK mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Table 12. ISOWATT220 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Table 13. SOT-82FM mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Table 14. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

3/24

List of figures VND5N07

List of figures

Figure 1. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Figure 2. Switching time test circuit for resistive load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Figure 3. Test circuit for diode recovery times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Figure 4. Unclamped inductive load test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Figure 5. Input charge test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Figure 6. Unclamped inductive waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Figure 7. Switching waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Figure 8. Thermal impedance for ISOWATT220 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Figure 9. Thermal impedance for DPAK / IPAK. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Figure 10. Source-Drain diode forward characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Figure 11. Static Drain-Source on resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Figure 12. Derating curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Figure 13. Static Drain-Source on resistance vs. input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Figure 14. Normalized on resistance Vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Figure 15. Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Figure 16. Static Drain-Source on resistance Vs. Id . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Figure 17. Switching time resistive load. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Figure 18. Turn-on current slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Figure 19. Turn-on current slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Figure 20. Input voltage Vs. input charge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Figure 21. Turn-off Drain source voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Figure 22. Turn-off Drain-Source voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Figure 23. Capacitance variations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Figure 24. Switching time resistive load. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Figure 25. Step response current limit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Figure 26. Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Figure 27. Normalized on resistance Vs. temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Figure 28. Normalized Input threshold voltage Vs. temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Figure 29. Normalized current limit Vs. junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Figure 30. DPAK package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Figure 31. IPAK mechanical data and package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Figure 32. ISOWATT220 mechanical data and package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Figure 33. SOT-82FM mechanical data and package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

4/24

VND5N07 Block diagram and pin description

1 Block diagram and pin description

Figure 1. Block diagram

5/24

Electrical specifications VND5N07

2 Electrical specifications

2.1 Absolute maximum ratings

Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to Absolute maximum rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
program and other relevant quality document.

Table 2. Absolute maximum ratings

Symbol Parameter

DPAK / IPAK ISOWATT220 SOT-82FM

Value Un it

V

V

V

P

T

Drain-Source voltage (V

DSn

Input voltage 18 V

INn

I

Drain current Internally limited A

Dn

I

Reverse DC output current -7 A

Rn

Electrostatic discharge (R = 1.5KΩ,

ESD

C = 100pF)

Total dissipation at Tc = 25°C 60 24 9 W

tot

T

Operating junction temperature Internally limited °C

j

T

Case operating temperature Internally limited °C

c

Storage temperature -55 to 150 °C

stg

2.2 Thermal data

Table 3. Thermal data

Symbol Parameter

R

R

thj-case

thj-amb

Thermal resistance junction-case 3.75 5.2 14 °C/W

Thermal resistance junction-ambient 100 62.5 100 °C/W

= 0V) Internally clamped V

INn

2000 V

Max. value Unit

DPAK / IPAK ISOWATT220 SOT-82FM

6/24

VND5N07 Electrical specifications

2.3 Electrical characteristics

Tcase = 25°C unless otherwise stated.

Table 4. Off

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

CLAMP

V

CLTH

I

V

I

DSS

Table 5. On

Drain-Source clamp
voltage

Drain-Source
threshold voltage

Supply current from

ISS

input pin

Input-Source reverse

INCL

clamp voltage

Zero input voltage
drain current

=0V)

(V

IN

(1)

V

= 0V; ID = 200mA 60 70 80 V

IN

= 0V; ID = 2mA 55 V

V

IN

= 0V; V

V

DS

I

= 1mA -1.0 -0.3 V

IN

V

= 13V; V

DS

= 25V; V

V

DS

= 10V 250 500 µA

IN

IN

IN

= 0V;
= 0V

50

200µAµA

Symbol Parameter Test conditions Min. Typ. Max. Unit

R

DS(on)

V

IN(th)

1. Pulsed: pulse duration = 300µs, duty cycle 1.5%.

Static Drain-Source
on resistance

Input threshold
voltage

V

IN

V

IN

= Vin; ID + Iin = 1 mA 0.8 3 V

V

DS

=10V; ID = 2.5A;

= 5V; ID = 2.5A

200
280

mΩ

Table 6. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Forward

(1)

g

fs

C

1. Pulsed: pulse duration = 300µs, duty cycle 1.5%.

transconductance

Output capacitance V

OSS

V

= 13V; ID = 2.5A 3 4 S

DS

= 13V; f = 1MHz; V

DS

= 0V 200 300 pF

IN

7/24

Electrical specifications VND5N07

Table 7. Switching

(1)

Symbol Parameter Test conditions Min. Typ. Max. Unit

t

d(on)

t

d(off)

t

d(on)

t

d(off)

(dI/dt)

1. Parameters guaranteed by design / characterization.

Turn-on delay time

Rise time 60 100 ns

t

r

Turn-off delay time 150 300 ns

t

Fall time 40 80 ns

f

= 15V; ID = 2.5A

V

DD

= 10V; R

V

gen

gen

= 10Ω

Turn-on delay time

Rise time 400 600 ns

t

r

Turn-off delay time 3900 5000 ns

Fall time 1100 1600 ns

t

f

Turn-on current slope

on

Total input charge V

Q

i

V

= 15V; ID = 2.5A

DD

V

= 10V; R

gen

V

= 15V; ID = 2.5A

DD

= 10V; R

V

in

= 12V; ID = 2.5A; V

DD

gen

gen

= 1kΩ

= 10Ω

= 10V 18 nC

IN

50 100 ns

150 250 ns

80 A/µS

Table 8. Source Drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

(1)

V

SD

t

rr

Q

I

RRM

1. Pulsed: pulse duration = 300µs, duty cycle 1.5%.

2. Parameters guaranteed by design / characterization.

Table 9. Protections (-40°C < Tj < 150°C, unless otherwise specified)

Forward On voltage I

(2)

Reverse recovery time

Reverse recovery

(2)

rr

charge

Reverse recovery

(2)

current

= 2.5A; V

SD

I

= 2.5A; dI/dt = 100 A/µs

SD

V

= 30V;

DD

= 0V 1.6 V

IN

150 ns

0.3 µC

5.7 A

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

= 10V; V

I

t

dlim

T

jsh

T

jrs

I

gf

E

as

1. Parameters guaranteed by design / characterization.

Drain current limit

lim

Step response current

(1)

limit

Overtemperature

(1)

shutdown

(1)

Overtemperature reset 135 °C

(1)

Fault sink current

Single pulse

(1)

avalanche energy

IN

= 5V; V

V

IN

= 10V;

V

IN

= 5V

V

IN

V

= 10V; V

IN

= 5V; V

V

IN

Starting Tj = 25°C; V

= 10V R

V

IN

8/24

= 13V

DS

= 13V

DS

= 13V;

DS

= 13V

DS

DD

= 1kΩ; L = 10mH

gen

= 20V

3.5

3.5

15
40

5
5

20
60

7
7

A
A

µS
µS

150 °C

50
20

mA
mA

0.2 J

VND5N07 Electrical specifications

Figure 2.

Figure 3.

Switching time test circuit for resistive load

Test circuit for diode recovery times

I

OMNIFET

A

D

FAS T
DIODE

A

L=100uH

330

S

B

Ω

R

gen

V

gen

I

B

OMNIFET

D

S

8.5

V

DD

Ω

9/24

Electrical specifications VND5N07

Figure 4. Unclamped inductive load test circuits

R

V

IN

P

W

GEN

Figure 5. Input charge test circuit

IN

V

GEN

10/24

ND8003

VND5N07 Electrical specifications

Figure 6. Unclamped inductive waveforms

Figure 7. Switching waveforms

11/24

Electrical specifications VND5N07

Figure 8.

Thermal impedance for ISOWATT220

Figure 9. Thermal impedance for DPAK / IPAK

12/24

VND5N07 Electrical specifications

2.4 Electrical characteristics curves

Figure 10. Source-Drain diode forward

characteristics

Figure 12. Derating curve Figure 13. Static Drain-Source on

Figure 11. Static Drain-Source on

resistance

resistance vs. input voltage

Figure 14. Normalized on resistance Vs

temperature

13/24

Figure 15. Transconductance

Electrical specifications VND5N07

Figure 16. Static Drain-Source on

resistance Vs. Id

Figure 18. Turn-on current slope

(V

= 10V)

IN

Figure 17. Switching time resistive load

Figure 19. Turn-on current slope

(VIN = 5V)

Figure 20. Input voltage Vs. input

charge

14/24

Figure 21. Turn-off Drain Source voltage

slope

VND5N07 Electrical specifications

Figure 22. Turn-off Drain-Source voltage

Figure 23. Capacitance variations

slope

Figure 24. Switching time resistive load Figure 25. Step response current limit

Figure 26. Output characteristics Figure 27. Normalized on resistance Vs.

temperature

15/24

Electrical specifications VND5N07

Figure 28. Normalized Input threshold

voltage Vs. temperature

Figure 29. Normalized current limit Vs.

junction temperature

16/24

VND5N07 Protection features

3 Protection features

During normal operation, the INPUT pin is electrically connected to the gate of the internal
power MOSFET.

The device then behaves like a standard power MOSFET and can be used as a switch from
DC to 50KHz. The only difference from the user’s standpoint is that a small DC current I
flows into the INPUT pin in order to supply the internal circuitry.

The device integrates:

3.1 Overvoltage clamp protection

Internally set at 70V, along with the rugged avalanche characteristics of the Power MOSFET
stage give this device unrivalled ruggedness and energy handling capability. This feature is
mainly important when driving inductive loads.

3.2 Linear current limiter circuit

ISS

Limits the drain current ID to I
is active, the device operates in the linear region, so power dissipation may exceed the
capability of the heatsink. Both case and junction temperatures increase, and if this phase
lasts long enough, junction temperature may reach the overtemperature threshold T

whatever the INPUT pin voltages. When the current limiter

lim

3.3 Overtemperature and short circuit protection

These are based on sensing the chip temperature and are not dependent on the input
voltage. The location of the sensing element on the chip in the power stage area ensures
fast, accurate detection of the junction temperature. Overtemperature cutout occurs at
minimum 150 °C. The device is automatically restarted when the chip temperature falls
below 135 °C .

3.4 Status feedback

In the case of an overtemperature fault condition, a Status Feedback is provided through the
Input pin. The internal protection circuit disconnects the input from the gate and connects it
instead to ground via an equivalent resistance of 100 Ω. The failure can be detected by
monitoring the voltage at the Input pin, which will be close to ground potential.

Additional features of this device are ESD protection according to the Human Body model
and the ability to be driven from a TTL Logic circuit (with a small increase in R

DS(on)

jsh.

).

17/24

Package and packing information VND5N07

4 Package and packing information

4.1 ECOPACK® packages

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.

4.2 DPAK mechanical data

Figure 30. DPAK package dimensions

18/24

P032P

VND5N07 Package and packing information

Table 10. DPAK mechanical data

mm

Dim.

Min. Typ. Max.

A 2.20 2.40

A1 0.90 1.10

A2 0.03 0.23

B 0.64 0.90

B2 5.20 5.40

C 0.45 0.60

C2 0.48 0.60

D 6.00 6.20

D1 5.1

E 6.40 6.60

E1 4.7

e2.28

G 4.40 4.60

H 9.35 10.10

L2 0.8

L4 0.60 1.00

R0.2

V2 0° 8°

Package weight Gr. 0.29

19/24

Package and packing information VND5N07

4.3 IPAK mechanical data

Figure 31. IPAK mechanical data and package outline

Table 11. IPAK mechanical data

Symbol

Min. Typ. Max.

A2.2 2.4

A1 0.9 1.1

A3 0.7 1.3

B 0.64 0.9

B2 5.2 5.4

B3 0.85

B5 0.3

B6 0.95

C 0.45 0.6

C2 0.48 0.6

D6 6.2

E6.4 6.6

G4.4 4.6

H 15.9 16.3

L9 9.4

mm

L1 0.8 1.2

L2 0.8 1

20/24

VND5N07 Package and packing information

4.4 ISOWATT220 mechanical data

Figure 32. ISOWATT220 mechanical data and package outline

Table 12. ISOWATT220 mechanical data

Symbol

Min. Typ. Max.

A4.4 4.6

B2.5 2.7

D 2.5 2.75

E0.4 0.7

F0.75 1

F1 1.15 1.7

F2 1.15 1.7

G 4.95 5.2

G1 2.4 2.7

H10 10.4

L2 16

L3 28.6 30.6

L4 9.8 10.6

L6 15.9 16.4

L7 9 9.3

mm

33.2

21/24

Package and packing information VND5N07

4.5 SOT-82FM mechanical data

Figure 33. SOT-82FM mechanical data and package outline

Table 13. SOT-82FM mechanical data

Symbol

Min. Typ. Max.

A 2.85 3.05

A1 1.47 1.67

b 0.40 0.60

b1 1.4 1.6

b2 1.3 1.5

c 0.45 0.6

D 10.5 10.9

e2.2 2.8

E 7.45 7.75

L 15.5 15.9

L 1 1.95 2.35

mm

22/24

VND5N07 Revision history

5 Revision history

Table 14. Document revision history

Date Revision Changes

09-Sep-2004 1 Initial release.

17-Dec-2007 2 Stylesheet update. No content change.

11-Dec-2008 3

Document restructured and reformatted.
Added ECOPACK

®

packages information.

23/24

VND5N07

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