– Undervoltage shutdown
– Overvoltage clamp
– Load current limitation
– Self limiting of fast thermal transients
– Protection against loss of ground and loss
■ All types of resistive, inductive and capacitive
loads and suitable as LED driver
Description
The VND5E025BK-E is a double channel highside driver manufactured in the ST proprietary
VIPower™ M0-5 technology and housed in the
tiny PowerSSO-24 package. The VND5E025BK-E
is designed to drive 12V automotive grounded
loads delivering protection, diagnostics and easy
3V and 5V CMOS compatible interface with any
microcontroller.
The device integrates advanced protective
functions such as load current limitation, inrush
and overload active management by power
limitation, overtemperature shut-off with auto
restart and overvoltage active clamp.
A dedicated analog current sense pin is
associated with every output channel in order to
provide Enhanced diagnostic functions including
fast detection of overload and short circuit to
ground through power limitation indication and
overtemperature indication.
An improved current sense circuitry and the
introduction of a new current sense ratio drift,
dK/K(tot), allow the "single-point" calibration and
ensure a very high accuracy in case of "doublepoint" calibration.
The current sensing and diagnostic feedback of
the whole device can be disabled by pulling the
CS_DIS pin high to allow sharing of the external
sense resistor with other similar devices.
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to the conditions in table below for extended
periods may affect device reliability. Refer also to the STMicroelectronics SURE Program
and other relevant quality document.
Table 3.Absolute maximum ratings
SymbolParameterValueUnit
V
-V
-I
GND
I
OUT
- I
OUT
I
CSD
-I
CSENSE
V
CSENSE
DC supply voltage41
CC
Reverse DC supply voltage0.3
CC
DC reverse ground pin current200mA
DC output currentInternally limited
Reverse DC output current24
DC input current
IN
DC current sense disable input current
DC reverse CS pin current200
Current sense maximum voltageVCC- 41 to +V
-1 to 10
CC
V
A
mAI
V
Doc ID 16273 Rev 77/34
Page 8
Electrical specificationVND5E025BK-E
Table 3.Absolute maximum ratings (continued)
SymbolParameterValueUnit
Maximum switching energy (single pulse)
E
MAX
(L = 0.8 mH; R
= I
I
OUT
limL
(Typ.))
=0Ω; V
L
= 13.5 V; T
bat
jstart
= 150 °C;
140mJ
Electrostatic discharge
(Human Body Model: R = 1.5 kΩ; C = 100 pF)
4000
2000
4000
5000
5000
V
V
V
V
V
°C
V
V
ESD
ESD
T
T
– Input
– Current sense
–CS_DIS
– Output
–V
CC
Charge device model (CDM-AEC-Q100-011)750V
Junction operating temperature- 40 to 150
j
Storage temperature- 55 to 150
stg
2.2 Thermal data
Table 4.Thermal data
SymbolParameterMax. valueUnit
R
thj-case
R
thj-amb
Thermal resistance junction-case (with one channel on)1.35
°C/W
Thermal resistance junction-ambient See Figure 33
8/34Doc ID 16273 Rev 7
Page 9
VND5E025BK-EElectrical specification
2.3 Electrical characteristics
Values specified in this section are for 8V<VCC<28V; -40°C<Tj<150°C, unless otherwise
stated.
Table 5.Power section
SymbolParameterTest conditionsMin.Typ. Max. Unit
V
V
USDhyst
R
V
clamp
I
L(off1)
1. For each channel.
2. PowerMOS leakage included.
Operating supply
CC
voltage
Undervoltage shutdown3.54.5
USD
Undervoltage shutdown
hysteresis
On-state resistance
ON
Clamp voltageIS= 20 mA414652V
Supply current
I
S
Off-state output
current
Output - VCC diode
V
F
voltage
(1)
(1)
I
=3A; Tj= 25°C25
OUT
(1)
=3A; Tj= 150°C50
OUT
=3A; VCC=5V; Tj= 25°C35
I
OUT
Off-state; VCC=13V; Tj=25°C;
V
IN=VOUT=VSENSE=VCSD
Off-state; VCC=13V; Tj=125°C;
V
IN=VOUT=VSENSE=VCSD
On-state; V
=0A
I
OUT
VIN=V
=13V; VIN=5V;
CC
=0V; VCC=13V;
OUT
Tj= 25°C
V
IN=VOUT
=0V; VCC=13V;
Tj= 125°C
-I
=4 A; Tj=150°C0.7V
OUT
=0V
=0V
4.51328
VV
0.5
mΩI
(2)
2
(2)
5
µA
9
µA
36mA
00.013
µA
05
Table 6.Switching (VCC=13V; Tj= 25°C)
SymbolParameterTest conditions Min.Typ.Max. Unit
t
d(on)
t
d(off)
/dt)onTurn-on voltage slope
(dV
OUT
/dt)
(dV
OUT
W
ON
W
OFF
Turn-on delay time
Turn-off delay time-30-
Turn-off voltage slope-
off
Switching energy losses
during t
Switching energy losses
during t
=4.3 Ω
R
L
(see Figure 5)
=4.3 Ω
R
L
ON
W
RL=4.3 Ω
(see Figure 5)
OFF
W
-20-
-
See
Figure 24
See
Figure 25
-
-
-0.6-
-0.35-
Doc ID 16273 Rev 79/34
µs
V/µs
mJ
Page 10
Electrical specificationVND5E025BK-E
Table 7.Logic inputs
SymbolParameterTest conditionsMin.Typ. Max.Unit
V
IL
I
IL
V
IH
I
IH
V
I(hyst)
ICL
V
CSDL
I
CSDL
V
CSDH
I
CSDH
V
CSD(hyst)
V
CSCL
Table 8.Protections and diagnostics
Input low level voltage0.9V
Low level input currentVIN=0.9V1µA
Input high level voltage2.1V
High level input currentVIN=2.1V10µA
Input hysteresis voltage0.25
I
=1mA5.57
Input clamp voltage
IN
I
= -1mA-0.7
IN
CS_DIS low level voltage0.9
Low level CS_DIS currentV
=0.9V1µA
CSD
CS_DIS high level voltage2.1V
High level CS_DIS currentV
=2.1V10µA
CSD
CS_DIS hysteresis voltage0.25
I
=1mA5.57
(1)
CSD
=-1mA-0.7
I
CSD
CS_DIS clamp voltage
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
= 13V4360
I
LIMH
I
LIML
T
TSD
T
T
RS
T
HYST
V
DEMAG
V
ON
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
DC short circuit current
Short circuit current
during thermal cycling
Shutdown temperature150175200
Reset temperatureTRS+1 TRS+5
R
Thermal reset of STATUS135
Thermal hysteresis
(T
TSD-TR
)
Turn-Off output voltage
clamp
Output voltage drop
limitation
CC
5V < V
CC
< 28V
VCC= 13V;
TR<Tj<T
I
OUT
TSD
=2A; VIN=0;
L=6 mH
=0.1A;
I
OUT
= -40°C to +150°C
T
j
(see Figure 6)
15
7
-41 VCC-46 VCC-52V
V
CC
25mV
85
VV
V
A
°C
10/34Doc ID 16273 Rev 7
Page 11
VND5E025BK-EElectrical specification
Table 9.Current sense (8V < VCC< 18V)
SymbolParameterTest conditionsMin. Typ. Max. Unit
I
dK
dK
dK
dK
dK
K
1/K1
2/K2
3/K3
4/K4
5/K5
LED
K
1
(1)(2)
K
2
(1)(2)
K
3
(1)(2)
K4I
(1)(2)
K
5
(1)(2)
I
OUT/ISENSE
I
OUT/ISENSE
Current sense
ratio drift
I
OUT/ISENSE
Current sense
ratio drift
I
OUT/ISENSE
Current sense
ratio drift
OUT/ISENSE
Current sense
ratio drift
I
OUT/ISENSE
Current sense
ratio drift
= 0.05A; V
OUT
Tj= -40°C to 150°C
I
= 1.5 A; V
OUT
=0V;
V
CSD
= -40°C to 150°C2460 3363 4050
T
j
= 1.5 A; V
I
OUT
=0V;
V
CSD
Tj= -40°C to 150°C
I
=2 A; V
OUT
V
CSD
= -40°C to 150°C2550 3405 4108
T
j
=2 A; V
I
OUT
= -40°C to 150°C
T
j
I
= 2.4 A; V
OUT
V
CSD
= -40°C to 150°C2635 3384 4117
T
j
= 2.4 A; V
I
OUT
= -40°C to 150°C
T
j
I
=3 A; V
OUT
V
CSD
= -40°C to 150°C2752 3368 3975
T
j
=3 A; V
I
OUT
= -40°C to 150°C
T
j
I
=4 A; V
OUT
V
CSD
= -40°C to 150°C2860 3341 3805
T
j
=4 A; V
I
OUT
SENSE
=0V;
SENSE
=0V;
SENSE
=0V;
SENSE
SENSE
=0V;
SENSE
Tj= -40°C to 150°C
SENSE
SENSE
SENSE
SENSE
SENSE
=0.5V; V
=4 V;
=4 V;
=4V;
=4V; V
=4V;
=4V; V
=4V;
=4V; V
=4V;
=4V; V
CSD
CSD
CSD
CSD
CSD
=0V;
=0V;
=0V;
=0V;
=0V;
1922 5046 9218
-99%
-77%
-6+6%
-55%
-44%
dK
dK/K
K
6/K6
(tot)
6
(1)(2)
I
Current sense
ratio drift
Current sense
ratio drift for
(1)(3)
single point
calibration
OUT/ISENSE
I
=10 A; V
OUT
V
=0V;
CSD
= -40°C to 150°C2965 3307 3570
T
j
=10 A; V
I
OUT
= -40°C to 150°C
T
j
Measurement point: I
= 25°C; VCC = 13.5V
T
j
=1.5A
I
OUT
=2.0A
I
OUT
I
=2.4A
OUT
=3.0A
I
OUT
=4.0A
I
OUT
SENSE
SENSE
=4V;
=4V; V
= 2.4 A;
OUT
CSD
=0V;
-33%
-9.5
-7
-6
-7
-8
9.5
7
6
7
8
%
%
%
%
%
Doc ID 16273 Rev 711/34
Page 12
Electrical specificationVND5E025BK-E
Table 9.Current sense (8V < VCC< 18V) (continued)
SymbolParameterTest conditionsMin. Typ. Max. Unit
I
I
SENSE
I
OL
V
SENSE
V
SENSEH
I
SENSEH
Analog sense
0
leakage current
Openload onstate current
detection
threshold
Max analog
sense output
voltage
Analog sense
output voltage in
fault condition
Analog sense
output current in
fault condition
OUT
V
CSD
V
CSD
I
OUT
V
CSD
V
IN
I
SENSE
I
OUT
VCC= 13V; R
(4)
VCC= 13V; V
(2)
=0A; V
=5V; VIN=0V; Tj= -40°C to 150°C
=0V; VIN=5V; Tj= -40°C to 150°C
=2A; V
=5V; VIN=5V; Tj= -40°C to 150°C
= 5V, 8V<VCC<18V
= 5 µA
=3 A; V
=0V;
SENSE
=0V;
SENSE
=0V 5
CSD
=3.9kΩ8
SENSE
=5V6912mA
SENSE
0
0
0
1
µA
2
µA
1
µA
570mA
V
t
DSENSE1H
t
DSENSE1L
t
DSENSE2H
Delay response
time from falling
edge of CS_DIS
pin
Delay response
time from rising
edge of CS_DIS
pin
Delay response
time from rising
edge of INPUT
pin
V
I
SENSE
SENSE
<4V, 0.5<I
= 90% of I
(see Figure 4)
V
I
SENSE
SENSE
<4V, 0.5<I
= 10% of I
(see Figure 4)
V
I
SENSE
SENSE
<4V, 0.5<I
= 90% of I
(see Figure 4)
<10A
OUT
SENSEMAX
<10A
OUT
SENSEMAX
<10A
OUT
SENSEMAX
30100
520
80300
Delay response
Δt
DSENSE2H
time between
rising edge of
output current
and rising edge
V
I
SENSE
I
OUT
SENSE
= 90% of I
<4V,
= 90% of I
(see Figure 7)
SENSEMAX,
OUTMAX
, I
OUTMAX
=3A
of current sense
Delay response
t
DSENSE2L
time from falling
edge of INPUT
pin
1. Parameter guaranteed by design; it is not tested.
2. Analog sense current drift (dK/K) is deviation of factor K for a given device over (-40 °C to 150 °C,
Vbatt: 8 V...16 V) with respect to its value measured at Tj = 25 °C, V
3. Total current drift over -40 °C to 150 °C, Vbatt: 8 V...16 V and output current variation, respect to a
calibration point measured at Tj = 25 °C and VCC=13.5V.
4. Fault condition includes: power limitation and overtemperature.
V
I
SENSE
SENSE
<4V, 0.5<I
= 10% of I
(see Figure 4)
<10A
OUT
SENSEMAX
CC
520
=13V.
µs
110
12/34Doc ID 16273 Rev 7
Page 13
VND5E025BK-EElectrical specification
Figure 4.Current sense delay characteristics
INPUT
CS_DIS
LOAD CURRENT
SENSE CURRENT
t
DSENSE2H
t
DSENSE1L
Figure 5.Switching characteristics
/dt
(on)
t
d(on)
t
Won
80%
t
r
V
OUT
dV
OUT
INPUT
10%
t
d(off)
t
Woff
90%
t
f
t
DSENSE1H
dV
OUT
/dt
(off)
t
DSENSE2L
t
t
Figure 6.Output voltage drop limitation
VCC-V
OUT
Tj=150oC
V
on
V
on/Ron(T)
Doc ID 16273 Rev 713/34
Tj=25oC
T
=-40oC
j
I
OUT
Page 14
Electrical specificationVND5E025BK-E
Figure 7.Delay response time between rising edge of output current and rising
edge of current sense (CS enabled)
V
IN
Δ
t
DSENSE2H
t
I
OUT
I
SENSE
90% I
OUTMAX
I
OUTMAX
I
SENSEMAX
t
90% I
SENSEMAX
Figure 8.I
OUT/ISENSE
vs I
OUT
K
4200
4000
3800
3600
3400
3200
3000
2800
2600
2400
2200
1.52.53.54.55.56.57.58.59.5
Iout (A)
t
K(min)
K(max)
14/34Doc ID 16273 Rev 7
Page 15
VND5E025BK-EElectrical specification
Figure 9.Maximum current sense ratio drift vs load current
dK/K
10%
8%
6%
4%
2%
0%
-2%
-4%
-6%
-8%
-10%
1.52.53.54.55.56.57.58.59.5
Iout (A)
Note:
Parameter guaranteed by design; it is not tested.
dK/K(min)
dK/K(max)
Table 10.Truth table
ConditionsInputOutputSense (V
Normal operation
Overtemperature
Undervoltage
Overload
Short circuit to GND
(Power limitation)
Negative output voltage
clamp
1. If the V
and external circuit.
is high, the SENSE output is at a high impedance, its potential depends on leakage currents
CAll functions of the device performed as designed after exposure to disturbance.
E
One or more functions of the device did not perform as designed after exposure to
disturbance and cannot be returned to proper operation without replacing the device.
16/34Doc ID 16273 Rev 7
Page 17
VND5E025BK-EElectrical specification
2.4 Waveforms
Figure 10. Normal operation
Normal operation
INPUT
Nominal loadNominal load
I
OUT
V
SENSE
V
CS_DIS
Figure 11. Overload or short to GND
Overload or Short to GND
INPUT
I
OUT
V
SENSE
V
CS_DIS
I
LimH
>
Power Limitation
I
LimL
Thermal cycling
>
Doc ID 16273 Rev 717/34
Page 18
Electrical specificationVND5E025BK-E
Figure 12. Intermittent overload
Intermittent Overload
INPUT
Overload
I
>
LimH
I
>
LimL
I
OUT
V
>
SENSEH
V
SENSE
V
CS_DIS
Figure 13. TJ evolution in overload or short to GND
TJ evolution in
Overload or Short to GND
Nominal load
INPUT
Self-limitation of fast thermal transients
T
J_START
T
J
I
>
LimH
I
OUT
Power Limitation
18/34Doc ID 16273 Rev 7
T
T
TSD
R
< I
T
HYST
LimL
Page 19
VND5E025BK-EElectrical specification
2.5 Electrical characteristics curves
Figure 14. Off-state output currentFigure 15. High level input current
Iloff (nA)
1000
900
800
700
600
500
400
300
200
100
0
-50 -250255075 100 125 150 175
Off State
Vcc=13V
Vin=Vout=0V
Tc (°C)
Figure 16. Input clamp voltageFigure 17. Input high level
Vicl (V)
7
6,8
6,6
6,4
6,2
6
5,8
5,6
5,4
5,2
5
lin=1mA
-50-250255075100 125 150 175
Tc (°C)
Figure 18. Input low levelFigure 19. Input hysteresis voltage
Vil (V)
2
1,8
1,6
1,4
1,2
1
0,8
0,6
0,4
0,2
0
-50-250255075100 125 150 175
Tc (°C)
Iih (µA)
5
4,5
3,5
2,5
1,5
0,5
Vin = 2.1V
V
= 8 V
4
3
2
1
0
-50-250255075100 125 150 175
CC
Tc (°C)
Vih (V)
4
3,5
3
2,5
2
1,5
1
0,5
0
-50-250255075100 125 150 175
Tc (°C)
Vihyst (V)
1
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0
-50 -250255075100 125 150 175
Tc (°C)
Doc ID 16273 Rev 719/34
Page 20
Electrical specificationVND5E025BK-E
Figure 20. On-state resistance vs T
case
Ron (mOhm)
70
60
Iout= 3A
Vcc=13V
50
40
30
20
10
0
-50-250255075100 125 150 175
Tc (°C)
Figure 22. Undervoltage shutdownFigure 23. I
Vusd (V)
16
14
12
10
8
6
4
2
0
-50-250255075100 125 150 175
Tc (°C)
Figure 24. Turn-on voltage slopeFigure 25.Turn-off voltage slope
(dVout/dt )On (V/ms)
700
Figure 21. On-state resistance vs V
Ron (mOhm)
60
50
40
30
20
10
0
0510152025303540
Vcc (V)
vs T
LIMH
case
Ilimh (A)
70
65
60
55
50
45
40
Vcc=13V
-50-250255075100 125 150 175
Tc (°C)
(dVout/dt )Off (V/ms)
600
Tc=150°C
Tc=125°C
Tc=25°C
Tc=-40°C
CC
600
500
400
300
200
100
0
-50 -250255075 100 125 150 175
Vcc=13V
RI=4.3 Ohm
Tc (°C)
20/34Doc ID 16273 Rev 7
500
Vcc=13V
RI= 4.3 Ohm
400
300
200
100
0
-50 -250255075100 125 150 175
Tc (°C)
Page 21
VND5E025BK-EElectrical specification
Figure 26. CS_DIS high level voltageFigure 27. CS_DIS low level voltage
Vcsdh (V)
4
3,5
3
2,5
2
Vcsdl (V)
3
2,5
2
1,5
1,5
1
0,5
0
-50-250255075 100 125 150 175
Tc (°C)
Figure 28. CS_DIS clamp voltage
Vcsdcl(V)
10
9
8
Icsd = 1 mA
7
6
5
4
3
2
1
0
-50-250255075100 125 150 175
Tc (°C)
1
0,5
0
-50 -250255075100 125 150 175
Tc (°C)
Doc ID 16273 Rev 721/34
Page 22
Application informationVND5E025BK-E
3 Application information
Figure 29. Application schematic
+5V
V
CC
R
prot
Μ
CU
R
prot
R
prot
R
SENSE
C
EXT
CS_DIS
INPUT
CURRENT SENSE
D
ld
OUTPUT
GND
R
GND
GND
D
GND
V
Note:
Channel 2 has the same internal circuit as channel 1.
3.1 GND protection network against reverse battery
This section provides two solutions for implementing a ground protection network against
reverse battery.
3.1.1 Solution 1: resistor in the ground line (R
This can be used with any type of load.
The following is an indication on how to dimension the R
1.R
2. R
where -I
maximum rating section of the device datasheet.
Power dissipation in R
P
= (-VCC)2/R
D
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I
maximum On-state currents of the different devices.
≤ 600 mV / (I
GND
≥ (−VCC) / (-I
GND
is the DC reverse ground pin current and can be found in the absolute
GND
GND
S(on)max
GND
GND
)
)
(when VCC<0: during reverse battery situations) is:
GND
only)
resistor.
GND
S(on)max
becomes the sum of the
Please note that if the microprocessor ground is not shared by the device ground then the
R
will produce a shift (I
GND
S(on)max
22/34Doc ID 16273 Rev 7
* R
) in the input thresholds and the status output
GND
Page 23
VND5E025BK-EApplication information
values. This shift will vary depending on how many devices are On in the case of several
high-side drivers sharing the same R
GND
.
If the calculated power dissipation leads to a large resistor or several devices have to share
the same resistor then ST suggests to utilize Solution 2 (see below).
3.1.2 Solution 2: diode (D
A resistor (R
=1 kΩ) should be inserted in parallel to D
GND
) in the ground line
GND
inductive load.
This small signal diode can be safely shared amongst several different HSDs. Also in this
case, the presence of the ground network will produce a shift (≈600mV) in the input
threshold and in the status output values if the microprocessor ground is not common to the
device ground. This shift will not vary if more than one HSD shares the same diode/resistor
network.
3.2 Load dump protection
Dld is necessary (voltage transient suppressor) if the load dump peak voltage exceeds the
V
max DC rating. The same applies if the device is subject to transients on the VCC line
CC
that are greater than the ones shown in the ISO 7637-2: 2004(E) table.
3.3 MCU I/Os protection
If a ground protection network is used and negative transient are present on the VCC line,
the control pins will be pulled negative. ST suggests to insert a resistor (R
prevent the MCU I/Os pins to latch-up.
The value of these resistors is a compromise between the leakage current of MCU and the
current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of MCU
I/Os:
if the device drives an
GND
prot
) in line to
-V
CCpeak/Ilatchup
≤ R
prot
Calculation example:
For V
5kΩ ≤ R
= - 100 V and I
CCpeak
≤ 180 kΩ
prot
Recommended values: R
≤ (V
OHμC-VIH-VGND
≥ 20 mA; V
latchup
=10 kΩ, C
prot
Doc ID 16273 Rev 723/34
EXT
) / I
IHmax
OHµC
=10 nF.
≥ 4.5 V
Page 24
Application informationVND5E025BK-E
3.4 Current sense and diagnostic
The current sense pin performs a double function (see Figure 30: Current sense and
diagnostic):
●Current mirror of the load current in normal operation, delivering a current
proportional to the load one according to a known ratio K
The current I
external resistor R
minimum (see parameter V
can be easily converted to a voltage V
SENSE
. Linearity between I
SENSE
SENSE
in Table 9: Current sense (8V < VCC < 18V)). The
OUT
and V
current sense accuracy depends on the output current (refer to current sense electrical
characteristics Table 9: Current sense (8V < VCC < 18V)).
●Diagnostic flag in fault conditions, delivering a fixed voltage V
maximum current I
SENSEH
in case of the following fault conditions (refer to Tr ut h t a bl e):
–Power limitation activation
–Overtemperature
A logic level high on CS_DIS pin sets at the same time all the current sense pins of the
device in a high impedance state, thus disabling the current monitoring and diagnostic
detection. This feature allows multiplexing of the microcontroller analog inputs by sharing of
sense resistance and ADC line among different devices.
.
X
SENSE
by means of an
SENSE
is ensured up to 5V
SENSEH
up to a
Figure 30. Current sense and diagnostic
Signal Clamp
Undervol t age
IN1
IN2
CS_
DI S
CS1
CS2
LOGIC
Contr ol & Diagnosti c 1
DRI VE R
Ov e r
temp.
V
SENSEH
OVERLOAD PROTECTI ON
( ACTIVE POWER LIMITATION)
Curr ent
Li mitation
Curr ent
Sense
Power
Cl a mp
Limitation
V
CC
V
CH 1
ON
Channels 2
CH 2
CONTROL & DIAGNOSTIC
OUT 2
OUT 1
24/34Doc ID 16273 Rev 7
GND
Page 25
VND5E025BK-EApplication information
3.5 Maximum demagnetization energy (VCC=13.5V)
Figure 31. Maximum turn-off current versus inductance (for each channel)
100
A
B
C
10
I (A)
1
0,1110100L (mH)
A:
T
= 150°C single pulse
jstart
B: T
C:
VIN, I
Note:
Values are generated with R
In case of repetitive pulses, T
specified above for curves A and B.
= 100°C repetitive pulse
jstart
T
= 125°C repetitive pulse
jstart
L
=0 Ω.
L
jstart
DemagnetizationDemagnetizationDemagnetization
t
(at beginning of each demagnetization) of every pulse must not exceed the temperature
Doc ID 16273 Rev 725/34
Page 26
Package and thermal dataVND5E025BK-E
4 Package and thermal data
4.1 PowerSSO-24 thermal data
Figure 32. PowerSSO-24 PC board
Note:
Layout condition of R
thickness = 1.6mm, Cu thickness = 70µm (front and back side), Copper areas: from minimum pad layout to 8cm
and Zth measurements (PCB: Double layer, Thermal Vias, FR4 area = 77mm x 86mm, PCB
th
2
).
Figure 33. R
RTHj_amb(°C/W)
55
50
45
40
35
30
0246810
thj-amb
on)
vs PCB copper area in open box free air condition (one channel
PCB Cu heatsink area (cm^2)
26/34Doc ID 16273 Rev 7
Page 27
VND5E025BK-EPackage and thermal data
Figure 34. PowerSSO-24 thermal impedance junction to ambient single pulse (one
channel on)
ZTH (°C/W)
1000
100
10
1
0.1
0.00010.0010.010.11101001000
Equation 1: pulse calculation formula
Z
THδ
R
TH
δZ
THtp
1δ–()+⋅=
where δ = tP/T
Time (s)
Footprint
2
2 cm
2
8 cm
Figure 35. Thermal fitting model of a double channel HSD in PowerSSO-24
Note:
The fitting model is a simplified thermal tool and is valid for transient evolutions where the embedded protections (power
limitation or thermal cycling during thermal shutdown) are not triggered.
Doc ID 16273 Rev 727/34
Page 28
Package and thermal dataVND5E025BK-E
Table 14.Thermal parameters
Area/Island (cm2)Footprint28
R1 (°C/W)0.28
R2 (°C/W)0.9
R3 (°C/W)6
R4 (°C/W)7.7
R5 (°C/W)998
R6 (°C/W)281710
R7 (°C/W)0.28
R8 (°C/W)0.9
C1 (W.s/°C)0.001
C2 (W.s/°C)0.003
C3 (W.s/°C)0.025
C4 (W.s/°C)0.75
C5 (W.s/°C)149
C6 (W.s/°C)2.2517
C7 (W.s/°C)0.001
C8 (W.s/°C)0.003
28/34Doc ID 16273 Rev 7
Page 29
VND5E025BK-EPackage and packing information
5 Package and packing information
5.1 ECOPACK
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com
ECOPACK
®
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
5.2 Package mechanical data
Figure 36. PowerSSO-24 package dimensions
.
Doc ID 16273 Rev 729/34
Page 30
Package and packing informationVND5E025BK-E
Table 15.PowerSSO-24
Symbol
A2.152.47
A22.152.40
a100.075
b0.330.51
c0.230.32
D10.1010.50
E7.47.6
e0.8
e38.8
G0.1
G10.06
H10.110.5
mechanical data
Millimeters
Min.Typ.Max.
h0.4
k5°
L0.550.85
N10°
X4.14.7
Y6.57.1
5.3 Packing information
Figure 37. PowerSSO-24 tube shipment (no suffix)
C
B
A
Base Qty49
Bulk Qty1225
Tube length (±0.5)532
A3.5
B13.8
C (±0.1)0.6
All dimensions are in mm.
30/34Doc ID 16273 Rev 7
Page 31
VND5E025BK-EPackage and packing information
Figure 38. PowerSSO-24 tape and reel shipment (suffix “TR”)
REEL DIMENSIONS
Base Qty1000
Bulk Qty1000
A (max)330
B (min)1.5
C (±0.2)13
F20.2
G (+2 / -0)24.4
N (min)100
T (max)30.4
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
11-Oct-20107Changed document status from target specification to datasheet.
Updated Table 9: Current sense (8V < VCC < 18V).
Updated Figure 9: Maximum current sense ratio drift vs load current
Updated following tables:
– Table 6: Switching (VCC = 13V; Tj = 25°C)
– Table 9: Current sense (8V < VCC < 18V)
Updated following figures:
– Figure 8: IOUT/ISENSE vs IOUT
– Figure 9: Maximum current sense ratio drift vs load current
Doc ID 16273 Rev 733/34
Page 34
VND5E025BK-E
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