Double channel high-side driver with analog current sense
for automotive applications
Max transient supply voltageV
Operating voltage rangeV
Max on-state resistance (per ch.) R
Current limitation (typ)I
Off-state supply currentI
1. Typical value with all loads connected.
■ General
– Inrush current active management by
power limitation
– Very low standby current
– 3.0 V CMOS compatible inputs
– Optimized electromagnetic emissions
– Very low electromagnetic susceptibility
– In compliance with the 2002/95/EC
european directive
– Very low current sense leakage
■ Diagnostic functions
– Proportional load current sense
– High current sense precision for wide
currents range
– Current sense disable
– Off-state open- load detection
– Output short to V
– Overload and short to ground (power
– Undervoltage shutdown
– Overvoltage clamp
– Load current limitation
– Self limiting of fast thermal transients
– Protection against loss of ground and loss
■ All types of resistive, inductive and capacitive
loads
■ Suitable as LED driver
Description
The VND5E025AK-E is a double channel highside driver manufactured in the ST proprietary
VIPower M0-5 technology and housed in the tiny
PowerSSO-24 package. The VND5E025AK-E is
designed to drive 12 V automotive grounded
loads delivering protection, diagnostics and an
easy 3 V and 5 V CMOS compatible interface with
any microcontroller.
The device integrates advanced protective
functions such as load current limitation, inrush
and overload active management by power
limitation, overtemperature shut-off with auto
restart and overvoltage active clamp. A dedicated
analog current sense pin is associated with every
output channel in order to provide enhanced
diagnostic functions including fast detection of
overload and short-circuit to ground through
power limitation indication, overtemperature
indication, short-circuit to V
on-state and off-state open-load detection. The
current sensing and diagnostic feedback of the
whole device can be disabled by pulling the
CS_DIS pin high to allow sharing of the external
sense resistor with other similar devices.
Figure 34.Maximum turn-off current versus inductance (for each channel)
Figure 35.PowerSSO-24 PC board
Figure 36.Rthj-amb vs PCB copper area in open box free air condition (one channel on). . . . . . . . . 30
Figure 37.PowerSSO-24 thermal impedance junction to ambient single pulse (one channel on) . . . 31
Figure 38.Thermal fitting model of a double channel HSD in PowerSSO-24
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to the conditions in table below for extended
periods may affect device reliability. Refer also to the STMicroelectronics SURE Program
and other relevant quality document.
Table 3.Absolute maximum ratings
SymbolParameterValueUnit
V
CC
-V
-I
GND
I
OUT
- I
OUT
I
IN
CSD
-I
CSENSE
V
CSENSE
DC supply voltage41
Reverse DC supply voltage0.3
CC
DC reverse ground pin current200mA
DC output currentInternally limited
Reverse DC output current24
DC input current
DC current sense disable input current
DC reverse CS pin current200
Current sense maximum voltageVCC- 41 to +V
-1 to 10
CC
V
A
mAI
V
Doc ID 14618 Rev 47/38
Page 8
Electrical specificationsVND5E025AK-E
Table 3.Absolute maximum ratings (continued)
SymbolParameterValueUnit
Maximum switching energy (single pulse)
E
MAX
(L = 0.8 mH; R
= I
limL
(Typ.))
I
OUT
=0Ω; V
L
= 13.5 V; T
bat
jstart
= 150 °C;
140mJ
Electrostatic discharge
(Human Body Model: R = 1.5 kΩ; C = 100 pF)
4000
2000
4000
5000
5000
V
V
V
V
V
°C
V
V
ESD
ESD
T
T
– Input
– Current sense
–CS_DIS
– Output
–V
CC
Charge device model (CDM-AEC-Q100-011)750V
Junction operating temperature- 40 to 150
j
Storage temperature- 55 to 150
stg
2.2 Thermal data
Table 4.Thermal data
SymbolParameterMax valueUnit
R
thj-case
R
thj-amb
Thermal resistance junction-case (with one channel ON)1.35
Thermal resistance junction-ambient See Figure 36
2.3 Electrical characteristics
Values specified in this section are for 8 V<VCC<28V; -40°C<Tj<150 °C, unless otherwise
stated.
Table 5.Power section
SymbolParameterTest conditionsMin. Typ. Max. Unit
V
V
USDhyst
R
V
clamp
Operating supply
CC
voltage
Undervoltage shutdown3.54.5
USD
Undervoltage shutdown
hysteresis
On-state resistance
ON
Clamp voltageIS= 20 mA414652V
(1)
4.51328
I
=3A; Tj=25°C25
OUT
=3A; Tj=150°C50
OUT
=3A; VCC=5V; Tj=25°C35
I
OUT
°C/W
VV
0.5
mΩI
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Page 9
VND5E025AK-EElectrical specifications
Table 5.Power section (continued)
SymbolParameterTest conditionsMin. Typ. Max. Unit
I
I
L(off1)
V
Supply current
S
Off-state output
current
Output - VCC diode
F
voltage
(1)
(1)
Off-state; V
V
IN=VOUT=VSENSE=VCSD
On-state; VCC=13V; VIN=5V;
I
=0A
OUT
VIN=V
OUT
Tj=25°C
V
IN=VOUT
= 125 °C
T
j
-I
=4 A; Tj=150°C0.7V
OUT
=13V; Tj=25°C;
CC
=0V; VCC=13V;
=0V; VCC=13V;
=0V
(2)5 (2)
2
36mA
00.013
05
1. For each channel.
2. PowerMOS leakage included.
Table 6.Switching (VCC=13V; Tj=25°C)
SymbolParameterTest conditions Min.Typ.Max. Unit
t
d(on)
t
d(off)
/dt)onTurn-On voltage slope
(dV
OUT
/dt)
(dV
OUT
W
ON
W
OFF
Turn-On delay time
Turn-Off delay time40
RL=4.3 Ω
(see Figure 6)
See Figure 27
=4.3 Ω
R
Turn-Off voltage slopeSee Figure 28
off
L
Switching energy losses
during t
Switching energy losses
during t
ON
W
RL=4.3 Ω
(see Figure 6)
OFF
W
20
0.6
0.35
µA
µA
µs
V/µs
mJ
Doc ID 14618 Rev 49/38
Page 10
Electrical specificationsVND5E025AK-E
Table 7.Logic inputs
SymbolParameterTest conditionsMin.Typ. Max.Unit
V
IL
I
IL
V
IH
I
IH
V
I(hyst)
ICL
V
CSDL
I
CSDL
V
CSDH
I
CSDH
V
CSD(hyst)
V
CSCL
Table 8.Protections and diagnostics
Input low level voltage0.9V
Low level input currentVIN=0.9V1µA
Input high level voltage2.1V
High level input currentVIN=2.1V10µA
Input hysteresis voltage0.25
Input clamp voltage
IN
I
=-1mA-0.7
IN
VV
I
=1mA5.57
CS_DIS low level voltage0.9
Low level CS_DIS currentV
=0.9V1µA
CSD
CS_DIS high level voltage2.1V
High level CS_DIS currentV
=2.1V10µA
CSD
CS_DIS hysteresis voltage0.25
I
CS_DIS clamp voltage
=1mA5.57
CSD
=-1mA-0.7
I
CSD
(1)
V
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
= 13 V4360
I
LIMH
I
LIML
T
TSD
T
T
T
HYST
V
DEMAG
V
RS
ON
DC short circuit current
Short circuit current
during thermal cycling
Shutdown temperature150175200
Reset temperatureTRS+1 TRS+5
R
Thermal reset of STATUS135
Thermal hysteresis
(T
TSD-TR
)
Turn-Off output voltage
clamp
Output voltage drop
limitation
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
CC
5V<V
CC
<28V
VCC=13V;
TR<Tj<T
I
OUT
TSD
=2A; VIN=0;
L=6 mH
=0.1A;
I
OUT
= -40 °C to +150 °C
T
j
(see Figure 8)
15
7
-41 VCC-46 VCC-52 V
V
CC
25mV
85
A
°C
10/38 Doc ID 14618 Rev 4
Page 11
VND5E025AK-EElectrical specifications
Table 9.Current sense (8 V < VCC<18V)
SymbolParameterTest conditionsMin. Typ. Max. Unit
I
dK
K
LED
K
K
1/K1
K
0
1
(1)
2
I
OUT/ISENSE
I
OUT/ISENSE
I
OUT/ISENSE
Current sense
ratio drift
I
OUT/ISENSE
= 0.05 A; V
OUT
Tj= -40 °C to 150 °C
I
=0.5A; V
OUT
= -40 °C to 150 °C
T
j
I
=2 A; V
OUT
=0V;
V
CSD
SENSE
SENSE
Tj= -40 °C to 150 °C
=25°C to 150°C
T
j
=2 A; V
I
OUT
V
CSD
= -40 °C to 150 °C
T
j
I
=3 A; V
OUT
V
CSD
= -40 °C to 150 °C
T
j
SENSE
=0V;
SENSE
=0V;
Tj= 25 °C to150 °C
SENSE
=4 V;
=4 V;
=4V;
= 0.5 V; V
= 0.5 V; V
CSD
CSD
=0V;
=0V;
1240 3350 4960
1860 3150 4600
2100
3100
4400
2250
3100
3850
-1313%
2200
3000
4100
2450
3000
3550
dK
2/K2
dK
3/K3
I
SENSE
=3 A; V
Current sense
(1)
ratio drift
K
3
(1)
I
OUT/ISENSE
Current sense
ratio drift
Analog sense
leakage
0
I
OUT
Tj= -40 °C to 150 °C
I
= 10 A; V
OUT
V
=0V;
CSD
= -40°C to 150°C
T
j
= 25°C to 150°C
T
j
= 10 A; V
I
OUT
= -40°C to 150°C
T
j
=0A; V
I
OUT
=5V; VIN=0V; Tj= -40°C to 150°C
V
CSD
V
=0V; VIN=5V; Tj= -40 °C to 150 °C
CSD
SENSE
SENSE
SENSE
SENSE
=4V; V
=4V;
=4V; V
=0V;
CSD
CSD
=0V;
=0V;
-1212%
2550
2850
3280
2650
2850
3180
-6+6%
0
0
1
2
µA
µA
current
I
=2A; V
OUT
V
=5V; VIN=5V; Tj= -40°C to 150°C
CSD
SENSE
=0V;
0
1
µA
Open-load on-
= 5 V, 8 V < VCC<18V
I
OL
state current
detection
threshold
V
IN
I
SENSE
= 5 µA
530mA
Max analog
V
SENSE
sense output
I
OUT
=3 A; V
=0V 5
CSD
voltage
Analog sense
V
SENSEH
output voltage
in fault
condition
(1)
VCC=13V; R
=3.9kΩ8
SENSE
V
Doc ID 14618 Rev 411/38
Page 12
Electrical specificationsVND5E025AK-E
Table 9.Current sense (8 V < VCC< 18 V) (continued)
SymbolParameterTest conditionsMin. Typ. Max. Unit
Analog sense
I
SENSEH
output current
in fault
condition
(2)
VCC=13V; V
=5V9mA
SENSE
Delay
t
DSENSE1H
response time
from falling
edge of
SENSE
<4V, 0.5<I
= 90% of I
V
I
SENSE
(see Figure 4)
SENSEMAX
OUT
<10A
CS_DIS pin
Delay
t
DSENSE1L
response time
from rising
edge of
SENSE
<4V, 0.5<I
=10% of I
V
I
SENSE
(see Figure 4)
<10A
OUT
SENSEMAX
CS_DIS pin
Delay
t
DSENSE2H
response time
from rising
edge of INPUT
SENSE
<4V, 0.5<I
= 90% of I
V
I
SENSE
(see Figure 4)
SENSEMAX
OUT
<10A
pin
Delay
Δt
DSENSE2H
response time
between rising
edge of output
current and
rising edge of
V
I
SENSE
I
OUT
(see Figure 7)
SENSE
=90% of I
=90% of I
<4V,
SENSEMAX,
OUTMAX
, I
OUTMAX
=3A
current sense
Delay
t
DSENSE2L
response time
from falling
edge of INPUT
SENSE
<4V, 0.5<I
=10% of I
V
I
SENSE
(see Figure 4)
<10A
OUT
SENSEMAX
pin
1. Fault condition includes: power limitation, overtemperature and open-load off-state detection.
30100
520
80300
µs
110
70250
Table 10.Open-load detection (8 V < VCC<18V)
SymbolParameterTest conditionMin.Typ.Max. Unit
V
t
DSTKON
I
L(off2)r
Open-load off-state
OL
voltage detection threshold
Output short circuit to V
detection delay at turn-off
Off-state output current at
V
= 4V
OUT
V
CC
See Figure 51801200µs
V
V
12/38 Doc ID 14618 Rev 4
=0V2
IN
=0V; V
IN
rising from 0 V to 4 V
OUT
SENSE
=0V
See
Figure 5
4V
-1200µA
Page 13
VND5E025AK-EElectrical specifications
Table 10.Open-load detection (8 V < VCC< 18 V) (continued)
SymbolParameterTest conditionMin.Typ.Max. Unit
=0V; V
I
L(off2)f
Off-state output current at
V
= 2 V
OUT
V
V
IN
OUT
SENSE=VSENSEH
falling from VCC to 2 V
-5090µA
Delay response from
= 4 V; VIN= 0 V
V
OUT
V
SENSE
= 90 % of V
SENSEH
20µs
td_vol
output rising edge to
SENSE
rising edge in
V
openload
Figure 4.Current sense delay characteristics
INPUT
CS_DIS
LOAD CURRENT
SENSE CURRENT
t
DSENSE2H
t
DSENSE1L
Figure 5.Openload off-state delay timing
OUTPUT STUCK TO V
V
IN
V
CS
t
DSENSE1H
CC
V
OUT
V
t
DSTKON
> V
SENSEH
OL
t
DSENSE2L
Doc ID 14618 Rev 413/38
Page 14
Electrical specificationsVND5E025AK-E
Figure 6.Switching characteristics
V
OUT
dV
OUT
INPUT
/dt
(on)
t
d(on)
t
Won
80%
t
Woff
90%
dV
/dt
OUT
(off)
t
r
10%
t
f
t
t
d(off)
t
14/38 Doc ID 14618 Rev 4
Page 15
VND5E025AK-EElectrical specifications
Figure 7.Delay response time between rising edge of output current and rising
edge of current sense (CS enabled)
V
IN
Δ
t
DSENSE2H
t
I
OUT
90% I
OUTMAX
I
OUTMAX
t
I
SENSE
I
90% I
SENSEMAX
SENSEMAX
t
Figure 8.Output voltage drop limitation
VCC-V
V
on
OUT
V
on/Ron(T)
Tj= 150oC
T
j
=25oC
=-40oC
T
j
I
OUT
Doc ID 14618 Rev 415/38
Page 16
Electrical specificationsVND5E025AK-E
Figure 9.I
I
/ I
out
sense
4700
4200
3700
3200
2700
2200
1700
1200
2345678910
OUT/ISENSE
vs I
max Tj = -40 °C to 150 °C
max Tj = 25 °C to 150 °C
min Tj = 25 °C to 150 °C
min Tj = -40 °C to 150 °C
OUT
typical value
I
(A)
OUT
Figure 10. Maximum current sense ratio drift vs load current
dk/k(%)
20
15
10
5
0
-5
-10
-15
-20
2345678 910
Note:Parameter guaranteed by design; it is not tested.
I
OUT
(A)
16/38 Doc ID 14618 Rev 4
Page 17
VND5E025AK-EElectrical specifications
Table 11.Truth table
ConditionsInputOutputSense (V
Normal operation
L
H
L
H
CSD
0
Nominal
=0V)
(1)
Overtemperature
Undervoltage
Overload
Short circuit to GND
(Power limitation)
Open-load off-state
(with external pull up)
Short circuit to V
CC
(external pull up
disconnected)
Negative output voltage
clamp
1. If the V
and external circuit.
is high, the SENSE output is at a high impedance, its potential depends on leakage currents
CAll functions of the device performed as designed after exposure to disturbance.
E
One or more functions of the device did not perform as designed after exposure to
disturbance and cannot be returned to proper operation without replacing the device.
18/38 Doc ID 14618 Rev 4
Page 19
VND5E025AK-EElectrical specifications
2.4 Waveforms
Figure 11. Normal operation
Normal operation
INPUT
Nominal loadNominal load
I
OUT
V
SENSE
V
CS_DIS
Figure 12. Overload or short to GND
Overload or Short to GND
INPUT
I
>
LimH
I
OUT
V
SENSE
V
CS_DIS
Power Limitation
I
LimL
Thermal cycling
>
Doc ID 14618 Rev 419/38
Page 20
Electrical specificationsVND5E025AK-E
Figure 13. Intermittent overload
Intermittent Overload
INPUT
Overload
I
>
LimH
I
>
LimL
I
OUT
V
>
SENSEH
V
SENSE
V
CS_DIS
Figure 14. Off-state open-load with external circuitry
OFF-State Open Load
with external circuitry
Nominal load
INPUT
V
t
DSTK(on)
OL
V
SENSEH
V
OUT
I
OUT
V
SENSE
V
CS_DIS
20/38 Doc ID 14618 Rev 4
V
> V
OUT
OL
>
Page 21
VND5E025AK-EElectrical specifications
Figure 15. Short to V
V
OUT
I
OUT
V
CS_DIS
CC
Resistive
Short to V
V
OL
t
DSTK(on)
CC
Short to V
CC
Hard
Short to V
V
> V
OUT
t
DSTK(on)
CC
OL
Figure 16. TJ evolution in overload or short to GND
TJ evolution in
Overload or Short to GND
INPUT
Self-limitation of fast thermal transients
T
J_START
T
J
I
>
LimH
I
OUT
Power Limitation
T
T
TSD
R
< I
T
HYST
LimL
Doc ID 14618 Rev 421/38
Page 22
Electrical specificationsVND5E025AK-E
2.5 Electrical characteristics curves
Figure 17. Off-state output currentFigure 18. High level input current
Iloff (nA)
1000
900
800
700
600
500
400
300
200
100
0
-50 -2502550 75 100 125 150 175
Off State
Vcc=13V
Vin=Vout=0V
Tc (°C)
Iih (µA)
5
4,5
3,5
2,5
1,5
0,5
Vin = 2.1V
CC = 8 V
V
4
3
2
1
0
-50 -250255075 100 125 150 175
Tc (°C)
Figure 19. Input clamp voltageFigure 20. Input high level voltage
Vicl (V)
7
6,8
6,6
6,4
6,2
6
5,8
5,6
5,4
5,2
5
lin=1mA
-50 -250255075 100 125 150 175
Tc (°C)
Vih (V)
4
3,5
3
2,5
2
1,5
1
0,5
0
-50 -250255075 100 125 150 175
Tc (°C)
Figure 21. Input low level voltageFigure 22. Input hysteresis voltage
Vil (V)
2
1,8
1,6
1,4
1,2
1
0,8
0,6
0,4
0,2
0
-50 -250255075 100 125 150 175
Tc (°C)
22/38 Doc ID 14618 Rev 4
Vihyst (V)
1
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0
-50 -250255075 100 125 150 175
Tc (°C)
Page 23
VND5E025AK-EElectrical specifications
Figure 23. On-state resistance vs T
case
Ron (mOhm)
70
60
50
40
30
20
10
0
Iout= 3A
Vcc=13V
-50 -250255075 100 125 150 175
Figure 24. On-state resistance vs V
Ron (mOhm)
60
50
40
30
20
10
0
0510152025303540
Tc (°C)
Figure 25. Undervoltage shutdownFigure 26. I
Vusd (V)
16
14
12
10
8
6
4
2
0
-50 -250255075 100 125 150 175
Tc (°C)
Ilimh (A)
70
65
60
55
50
45
40
-50 -250255075 100 125 150 175
LIMH
Vcc=13V
vs T
CC
Tc=150°C
Tc=125°C
Tc=25°C
Tc=-40°C
Vcc (V)
case
Tc (°C)
Figure 27. Turn-on voltage slopeFigure 28. Turn-off voltage slope
(dVout/dt )On (V/ms)
700
600
500
400
300
200
100
0
-50 -2502550 75 100 125 150 175
Vcc=13V
RI=4.3 Ohm
Tc (°C)
Doc ID 14618 Rev 423/38
(dVout/dt )Off (V/ms)
600
500
400
300
200
100
0
-50 -2502550 75 100 125 150 175
Vcc=13V
RI= 4.3 Ohm
Tc (°C)
Page 24
Electrical specificationsVND5E025AK-E
Figure 29. CS_DIS high level voltageFigure 30. CS_DIS low level voltage
Vcsdh (V)
4
3,5
3
2,5
2
1,5
1
0,5
0
-50 -250255075 100 125 150 175
Tc (°C)
Vcsdl (V)
3
2,5
2
1,5
1
0,5
0
-50 -250255075 100 125 150 175
Tc (°C)
Figure 31. CS_DIS clamp voltage
Vcsdcl(V)
10
9
8
7
6
5
4
3
2
1
0
-50 -250255075 100 125 150 175
Icsd = 1 mA
Tc (°C)
24/38 Doc ID 14618 Rev 4
Page 25
VND5E025AK-EApplication information
3 Application information
Figure 32. Application schematic
+5V
R
prot
Μ
CU
R
prot
R
prot
R
SENSE
C
EXT
(1)
CS_DIS
INPUT
CURRENT SENSE
V
CC
OUTPUT
GND
R
GND
GND
D
GND
V
1. Channel 2 has the same internal circuit as channel 1.
3.1 GND protection network against reverse battery
D
ld
This section provides two solutions for implementing a ground protection network against
reverse battery.
3.1.1 Solution 1: resistor in the ground line (R
This can be used with any type of load.
The following is an indication on how to dimension the R
1.R
2. R
where -I
maximum rating section of the device datasheet.
Power dissipation in R
P
= (-VCC)2/R
D
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I
maximum on-state currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground then the
R
GND
values. This shift varies depending on how many devices are On in the case of several high
side drivers sharing the same R
≤ 600mV / (I
GND
≥ (−VCC) / (-I
GND
is the DC reverse ground pin current and can be found in the absolute
GND
S(on)max
GND
GND
)
)
(when VCC<0: during reverse battery situations) is:
GND
produces a shift (I
S(on)max
* R
GND
GND
.
only)
GND
resistor.
GND
S(on)max
becomes the sum of the
) in the input thresholds and the status output
Doc ID 14618 Rev 425/38
Page 26
Application informationVND5E025AK-E
If the calculated power dissipation leads to a large resistor or several devices have to share
the same resistor then ST suggests to utilize Solution 2 (see below).
3.1.2 Solution 2: diode (D
A resistor (R
=1kΩ) should be inserted in parallel to D
GND
) in the ground line
GND
inductive load.
This small signal diode can be safely shared amongst several different HSDs. Also in this
case, the presence of the ground network produces a shift (≈600mV) in the input threshold
and in the status output values if the microprocessor ground is not common to the device
ground. This shift not varies if more than one HSD shares the same diode/resistor network.
3.2 Load dump protection
Dld is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds the
V
max DC rating. The same applies if the device is subject to transients on the VCC line
CC
that are greater than the ones shown in the ISO 7637-2: 2004(E) table.
3.3 MCU I/Os protection
If a ground protection network is used and negative transient are present on the VCC line,
the control pins are pulled negative. ST suggests to insert a resistor (R
the microcontroller I/Os pins to latch-up.
The value of these resistors is a compromise between the leakage current of microcontroller
and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of
microcontroller I/Os:
if the device drives an
GND
) in line to prevent
prot
-V
CCpeak/Ilatchup
≤ R
prot
≤ (V
OHμC-VIH-VGND
) / I
IHmax
Calculation example:
For V
5kΩ ≤ R
Recommended values: R
CCpeak
prot
≤ 180kΩ
= - 100V and I
latchup
=10kΩ, C
prot
≥ 20mA; V
=10nF.
EXT
OHµC
≥ 4.5V
26/38 Doc ID 14618 Rev 4
Page 27
VND5E025AK-EApplication information
3.4 Current sense and diagnostic
The current sense pin performs a double function (see Figure 33: Current sense and
diagnostic):
●Current mirror of the load current in normal operation, delivering a current
proportional to the load one according to a know ratio K
easily converted to a voltage V
Linearity between I
V
in Table 9: Current sense (8 V < VCC < 18 V)). The current sense accuracy
SENSE
OUT
and V
SENSE
by means of an external resistor R
SENSE
is ensured up to 5V minimum (see parameter
depends on the output current (refer to current sense electrical characteristics
Table 9: Current sense (8 V < VCC < 18 V)).
●Diagnostic flag in fault conditions, delivering a fixed voltage V
maximum current I
SENSEH
in case of the following fault conditions (refer to
Table 11: Truth table):
–Power limitation activation
–Overtemperature
–Short to V
in off-state
CC
–Open-load in off-state with additional external components.
A logic level high on CS_DIS pin sets at the same time all the current sense pins of the
device in a high impedance state, thus disabling the current monitoring and diagnostic
detection. This feature allows multiplexing of the microcontroller analog inputs by sharing of
sense resistance and ADC line among different devices.
. The current I
X
SENSEH
SENSE
SENSE
up to a
can be
.
Figure 33. Current sense and diagnostic
V
PU_CMD
R
I
Loff2r
I
Loff2f
R
PU
PU
Load
PD
V
BAT
V
CC
Main MOSn
I
OUT/KX
41V
Overtemperature
+
I
SENSEH
CS_DIS
V
SENSEH
CURRENT
SENSEn
R
PROT
To uC ADC
R
SENSE
V
SENSE
OL OFF
Pwr_Lim
INPUTn
-
V
OL
OUTn
GND
Doc ID 14618 Rev 427/38
Page 28
Application informationVND5E025AK-E
3.4.1 Short to VCC and off-state open-load detection
Short to V
A short circuit between V
V
SENSEH
CC
and output is indicated by the relevant current sense pin set to
CC
during the device off-state. Small or no current is delivered by the current sense
during the on-state depending on the nature of the short circuit.
Off-state open-load with external circuitry
Detection of an open-load in off mode requires an external pull-up resistor R
the output to a positive supply voltage V
It is preferable V
to be switched off during the module standby mode in order to avoid the
PU
PU
.
connecting
PU
overall standby current consumption to increase in normal conditions, i.e. when load is
connected.
An external pull down resistor R
connected between output and GND is mandatory to
PD
avoid misdetection in case of floating outputs in off-state (see Figure 33: Current sense and
diagnostic).
R
must be selected in order to ensure V
PD
OUT < VOLmin
unless pulled up by the external
circuitry:
VVIRV
2
=<⋅=
OLfoffLPD
min)2(
R
≤ 22 KΩ is recommended.
PD
OUT
OFFupPull
_
−
For proper open-load detection in off-state, the external pull-up resistor must be selected
according to the following formula:
IRRVR
V
OUT
For the values of V
=
ONupPull
_
−
OLmin,VOLmax, IL(off2)r
and I
⋅⋅−⋅
RR
+
PDPU
see Table 10: Open-load detection
L(off2)f
roffLPDPUPUPD
)2(
OL
max
VV
4
=>
(8 V < VCC < 18 V).
28/38 Doc ID 14618 Rev 4
Page 29
VND5E025AK-EApplication information
3.5 Maximum demagnetization energy (VCC=13.5V)
Figure 34. Maximum turn-off current versus inductance (for each channel)
100
A
B
C
10
I (A)
1
0,1110100L (mH)
A:
T
= 150°C single pulse
jstart
B: T
C:
= 100°C repetitive pulse
jstart
T
= 125°C repetitive pulse
jstart
(1)
VIN, I
L
DemagnetizationDemagnetizationDemagnetization
t
1. Values are generated with R
In case of repetitive pulses, T
the temperature specified above for curves A and B.
=0 Ω.
L
(at beginning of each demagnetization) of every pulse must not exceed
jstart
Doc ID 14618 Rev 429/38
Page 30
Package and thermal dataVND5E025AK-E
4 Package and thermal data
4.1 PowerSSO-24 thermal data
Figure 35. PowerSSO-24 PC board
1. Layout condition of R
area = 77 mm x 86mm, PCB thickness = 1.6 mm, Cu thickness = 70 µm (front and back side), Copper
areas: from minimum pad layout to 8 cm
Figure 36. R
thj-amb
and Zth measurements (PCB: Double layer, Thermal Vias, FR4
th
vs PCB copper area in open box free air condition (one channel
(1)
2
).
on)
RTHj_amb(°C/W)
55
50
45
40
35
30
0246810
PCB Cu heatsink area (cm^2)
30/38 Doc ID 14618 Rev 4
Page 31
VND5E025AK-EPackage and thermal data
Figure 37. PowerSSO-24 thermal impedance junction to ambient single pulse (one
channel on)
ZTH (°C/W)
1000
100
Footprint
2 cm
8 cm
10
1
0.1
0.00010.0010.010.11101001000
Time (s)
Equation 1: pulse calculation formula
Z
THδ
R
TH
δZ
THtp
1 δ–()+⋅=
where δ = tP/T
Figure 38. Thermal fitting model of a double channel HSD in PowerSSO-24
2
2
(1)
1. The fitting model is a simplified thermal tool and is valid for transient evolutions where the embedded
protections (power limitation or thermal cycling during thermal shutdown) are not triggered.
Doc ID 14618 Rev 431/38
Page 32
Package and thermal dataVND5E025AK-E
Table 15.Thermal parameters
Area/Island (cm2)Footprint28
R1 (°C/W)0.28
R2 (°C/W)0.9
R3 (°C/W)6
R4 (°C/W)7.7
R5 (°C/W)998
R6 (°C/W)281710
R7 (°C/W)0.28
R8 (°C/W)0.9
C1 (W.s/°C)0.001
C2 (W.s/°C)0.003
C3 (W.s/°C)0.025
C4 (W.s/°C)0.75
C5 (W.s/°C)149
C6 (W.s/°C)2.2517
C7 (W.s/°C)0.001
C8 (W.s/°C)0.003
32/38 Doc ID 14618 Rev 4
Page 33
VND5E025AK-EPackage and packing information
5 Package and packing information
5.1 ECOPACK® packages
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com
ECOPACK
®
is an ST trademark.
5.2 Package mechanical data
Figure 39. PowerSSO-24 package dimensions
.
Doc ID 14618 Rev 433/38
Page 34
Package and packing informationVND5E025AK-E
Table 16.PowerSSO-24™ mechanical data
Millimeters
Symbol
MinTypMax
A2.45
A22.152.35
a100.1
b0.330.51
c0.230.32
D10.1010.50
E7.47.6
e0.8
e38.8
F2.3
G0.1
H10.110.5
h0.4
k0°8°
L0.550.85
O1.2
Q0.8
S2.9
T3.65
U1.0
N10°
X4.14.7
Y6.57.1
34/38 Doc ID 14618 Rev 4
Page 35
VND5E025AK-EPackage and packing information
5.3 Packing information
Figure 40. PowerSSO-24 tube shipment (no suffix)
Base Qty49
Bulk Qty1225
C
B
A
Figure 41. PowerSSO-24 tape and reel shipment (suffix “TR”)
Tube length (±0.5)532
A3.5
B13.8
C (±0.1)0.6
All dimensions are in mm.
REEL DIMENSIONS
Base Qty1000
Bulk Qty1000
A (max)330
B (min)1.5
C (±0.2)13
F20.2
G (+2 / -0)24.4
N (min)100
T (max)30.4
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
– Deleted A (min) value
– Changed A (max) value from 2.47 to 2.45
19-Jun-20092
22-Jul-20093
28-May-20104Updated Features list.
– Changed A2 (max) value from 2.40 to 2.35
– Changed a1 (max) value from 0.075 to 0.1
– Added F row
– Updated k row
Updated Figure 39: PowerSSO-24 package dimensions.
Updated Table 16: PowerSSO-24™ mechanical data:
– Deleted G1 row
– Added O, Q, S, T and U rows
Doc ID 14618 Rev 437/38
Page 38
VND5E025AK-E
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