power limitation
– Very low standby current
– 3.0V CMOS compatible input
– Optimized electromagnetic emission
– Very low electromagnetic susceptibility
– In compliance with the 2002/95/EC
European directive
– Package: ECOPACK
■ Diagnostic functionsDoc ID 12581
– Proportional load current sense
– High current sense precision for wide range
currents
– Current sense disable
– Thermal shutdown indication
– Very low current sense leakage
■ Protection
– Undervoltage shut-down
– Overvoltage clamp
– Load current limitation
– Self-limiting of fast thermal transients
– Protection against loss of ground and loss
of V
– Thermal shutdown
– Reverse battery protection (see Application
Table 1.Device summary
CC
schematic on page 21)
Package
PowerSSO-24™VND5025AK-EVND5025AKTR-E
VND5025AK-E
Double channel high side driver with analog
current sense for automotive applications
CC
CC
ON
LIMH
S
®
41V
4.5 to 36V
25 mΩ
41 A
(1)
2 µA
PowerSSO-24™
– Electrostatic discharge protection
Application
■ All types of resistive, inductive and capacitive
loads
■ Suitable as LED driver
Description
The VND5025AK-E is a monolithic device made
using STMicroelectronics VIPower M0-5
technology, intended for driving resistive or
inductive loads with one side connected to
ground, and suitable for driving LEDs. Active V
pin voltage clamp protects the device against low
energy spikes (see ISO7637 transient
compatibility table). This device integrates an
analog current sense which delivers a current
proportional to the load current (according to a
known ratio) when CS_DIS is driven low or left
open. When CS_DIS is driven high, the
CURRENT SENSE pin is in a high impedance
condition. Output current limitation protects the
device in overload condition. In case of long
overload duration, the device limits the dissipated
power to safe level up to thermal shut-down
intervention. Thermal shut-down with automatic
restart allows the device to recover normal
operation as soon as fault condition disappears.
Figure 29.Rthj-amb vs PCB copper area in open box free air condition (one channel ON) . . . . . . . . 24
Figure 30.PowerSSO-24™ thermal impedance junction to ambient single pulse (one channel ON) . 25
Figure 31.Thermal fitting model of a double channel HSD in PowerSSO-24™
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to the conditions in table below for extended
periods may affect device reliability. Refer also to the STMicroelectronics SURE Program
and other relevant quality document.
Table 4.Absolute maximum ratings
SymbolParameterValueUnit
V
-V
-I
GND
I
OUT
- I
OUT
I
CSD
-I
CSENSE
V
CSENSE
DC supply voltage41
CC
Reverse DC supply voltage0.3
CC
DC reverse ground pin current200mA
DC output currentInternally limited
Reverse DC output current24
DC input current
IN
DC current sense disable input current
DC reverse CS pin current200
Current sense maximum voltageVCC- 41 to +V
-1 to 10
CC
V
A
mAI
V
Doc ID 12581 Rev 107/32
Page 8
Electrical specificationVND5025AK-E
Table 4.Absolute maximum ratings (continued)
SymbolParameterValueUnit
Maximum switching energy (single pulse)
E
MAX
(L = 0.8mH; R
I
OUT
= I
limL
L
(Typ.))
=0Ω; V
= 13.5V; T
bat
jstart
= 150°C;
140mJ
Electrostatic discharge
(Human Body Model: R = 1.5kΩ; C = 100pF)
4000
2000
4000
5000
5000
V
V
V
V
V
°C
V
V
ESD
ESD
T
T
- Input
- Current sense
- CS_DIS
- Output
- V
CC
Charge device model (CDM-AEC-Q100-011)750V
Junction operating temperature-40 to 150
j
Storage temperature-55 to 150
stg
2.2 Thermal data
Table 5.Thermal data
SymbolParameterMax ValueUnit
R
thj-case
R
thj-amb
Thermal resistance junction-case (MAX) (with one channel ON)1.35
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
CC
5V < V
CC
< 36V
VCC= 13V;
TR<Tj<T
I
OUT
V
IN
TSD
=2A;
=0;
L=6mH
= 0.20.1A;
I
OUT
= -40°C to +150°C
T
j
(see Figure 9)
57
A
16
°C
7
VCC-41 VCC-46 VCC-52 V
25mV
10/32 Doc ID 12581 Rev 10
Page 11
VND5025AK-EElectrical specification
Table 10.Current sense (8V < VCC<16V)
SymbolParameterTest conditionsMin. Typ. Max. Unit
I
dK
dK
K
LED
K
0/K0
K
1/K1
K
0
(1)
1
(1)
2
I
OUT/ISENSE
I
OUT/ISENSE
Current Sense
ratio drift
I
OUT/ISENSE
Current Sense
ratio drift
I
OUT/ISENSE
= 0.05A; V
OUT
Tj= -40°C to 150°C
I
= 0.5 A; V
OUT
= -40°C to 150°C
T
j
=0.5A; V
I
OUT
= -40°C to 150°C
T
j
I
=2A; V
OUT
=0V;
V
CSD
SENSE
SENSE
Tj= -40°C to 150°C
= 25°C to 150°C
T
j
=2A; V
I
OUT
V
CSD
= -40°C to 150°C
T
j
I
=3A; V
OUT
V
CSD
= -40°C to 150°C
T
j
SENSE
=0V;
SENSE
=0V;
Tj= 25°C to150°C
SENSE
SENSE
=0.5V; V
=0.5V; V
=0.5V; V
=4V;
=4V;
=4V;
CSD
CSD
CSD
=0V;
=0V;
=0V;
1450 3300 5180
1720 3020 4360
-12+12%
1940
2810
3740
2230
2810
3390
-10+10%
2250
2790
3450
2400
2790
3180
dK
2/K2
K
dK
3/K3
I
SENSE0
(1)
3
(1)
Current Sense
ratio drift
I
OUT/ISENSE
Current Sense
ratio drift
Analog Sense
leakage current
=3A; V
I
OUT
Tj= -40°C to 150°C
I
=10A; V
OUT
V
=0V;
CSD
= -40°C to 150°C
T
j
= 25°C to 150°C
T
j
=10A; V
I
OUT
= -40°C to 150°C
T
j
I
=0A; V
OUT
=5V; VIN=0V; Tj= -40°C to 150°C
V
CSD
V
=0V; VIN=5V; Tj= -40°C to 150°C
CSD
I
=2A; V
OUT
V
=5V; VIN=5V; Tj= -40°C to 150°C
CSD
SENSE
SENSE
SENSE
SENSE
SENSE
=4V; V
=4V;
=4V; V
=0V;
=0V;
CSD
CSD
=0V;
=0V;
-7+7%
2610
2760
2970
2650
2760
2870
-4+4%
0
0
0
1
2
1
µA
µA
µA
Openload on-
I
OL
state current
detection
V
= 5V, I
IN
= 5 µA530mA
SENSE
threshold
Max analog
V
SENSE
Sense output
I
OUT
=3 A; V
=0V 5
CSD
voltage
V
SENSEH
Analog Sense
output voltage in
over temperature
V
CC
= 13V; R
=3.9kΩ9
SENSE
V
condition
Doc ID 12581 Rev 1011/32
Page 12
Electrical specificationVND5025AK-E
Table 10.Current sense (8V < VCC< 16V) (continued)
SymbolParameterTest conditionsMin. Typ. Max. Unit
Analog Sense
I
SENSEH
output current in
over temperature
condition
V
CC
= 13V; V
=5V8mA
SENSE
t
DSENSE1H
t
DSENSE1L
t
DSENSE2H
Delay response
time from falling
edge of CS_DIS
pin
Delay response
time from rising
edge of CS_DIS
pin
Delay response
time from rising
edge of INPUT
pin
V
I
SENSE
SENSE
<4V, 0.5<I
= 90% of I
(see Figure 4)
V
I
SENSE
SENSE
<4V, 0.5<I
= 10% of I
(see Figure 4)
SENSE
<4V, 0.5<I
= 90% of I
V
I
SENSE
(see Figure 4)
Delay response
Δt
DSENSE2H
time between
rising edge of
output current
and rising edge
V
I
SENSE
I
OUT
(see Figure 5)
SENSE
= 90% of I
<4V,
= 90% of I
of current sense
Delay response
t
DSENSE2L
time from falling
edge of INPUT
pin
1. Parameter guaranteed by design; it is not tested.
V
I
SENSE
SENSE
<4V, 0.5<I
= 10% of I
(see Figure 4)
OUT
SENSEMAX
OUT
SENSEMAX
OUT
SENSEMAX
SENSEMAX,
OUTMAX
OUT
SENSEMAX
<10A
<10A
<10A
, I
OUTMAX
<10A
=3A
50 100
5 20
70 300
µs
200
100250
Figure 4.Current sense delay characteristics
INPUT
CS_DIS
LOAD CURRENT
SENSE CURRENT
t
DSENSE2H
12/32 Doc ID 12581 Rev 10
t
DSENSE1L
t
DSENSE1H
t
DSENSE2L
Page 13
VND5025AK-EElectrical specification
Figure 5.Delay response time between rising edge of output current and rising
edge of Current Sense (CS enabled)
V
IN
Δ
t
DSENSE2H
t
I
OUT
I
SENSE
90% I
OUTMAX
I
OUTMAX
I
SENSEMAX
t
90% I
SENSEMAX
t
Figure 6.Switching characteristics
t
d(off)
t
Woff
90%
t
f
dV
OUT
/dt
(off)
t
t
V
OUT
t
Won
80%
dV
/dt
OUT
(on)
t
r
INPUT
t
d(on)
10%
Doc ID 12581 Rev 1013/32
Page 14
Electrical specificationVND5025AK-E
Figure 7.I
OUT/ISENSE
I
/ I
out
sense
1. See Table 10 for details.
OUT
(1)
vs I
4500
4000
3500
max Tj = -40 °C to 150 °C
max Tj = 25 °C to 150 °C
3000
2500
2000
min Tj = 25 °C to 150 °C
min Tj = -40 °C to 150 °C
typical value
1500
1000
246810
I
(A)
OUT
Figure 8.Maximum current sense ratio drift vs load current
(1)
dk/k(%)
15
10
5
0
-5
-10
-15
2345678910
I
(A)
OUT
1. Parameter guaranteed by design; it is not tested.
14/32 Doc ID 12581 Rev 10
Page 15
VND5025AK-EElectrical specification
Table 11.Truth table
ConditionsInputOutputSense (V
CSD
=0V)
(1)
Normal operation
LL0
HH Nominal
L
Over temperature
L
HV
L
Undervoltage
L0
H
L
Short circuit to GND (R
≤ 10mΩ)
SC
H
L
V
SENSEH
0 if Tj < T
L
Short circuit to V
CC
H< Nominal
H
Negative output voltage clampLL0
1. If the V
and external circuit.
is high, the SENSE output is at a high impedance; its potential depends on leakage currents
CAll functions of the device performed as designed after exposure to disturbance.
E
One or more functions of the device did not perform as designed after exposure to
disturbance and cannot be returned to proper operation without replacing the device.
16/32 Doc ID 12581 Rev 10
Page 17
VND5025AK-EElectrical specification
Figure 10. Waveforms
NORMAL OPERATION
INPUT
CS_DIS
LOAD CURRENT
SENSE CURRENT
UNDERVOLTAGE
V
V
CC
INPUT
CS_DIS
LOAD CURRENT
SENSE CURRENT
V
USD
USDhyst
INPUT
CS_DIS
LOAD VOLTAGE
LOAD CURRENT
SENSE CURRENT
T
T
T
j
R
INPUT
CS_DIS
LOAD CURRENT
SENSE CURRENT
Current
limitation
TSD
T
SHORT TO V
CC
< Nominal< Nominal
OVERLOAD OPERATION
RS
I
LIMH
I
LIML
V
SENSEH
Power
limitation
Thermal cycling
SHORTED LOADNORMAL LOAD
Doc ID 12581 Rev 1017/32
Page 18
Electrical specificationVND5025AK-E
2.4 Electrical characteristics curves
Figure 11. Off-state output currentFigure 12. High level input current
Iloff (uA)
0.5
0.45
0.4
0.35
Off State
Vcc=13V
Vin=Vout=0V
0.3
0.25
0.2
0.15
0.1
0.05
0
-50 -250255075 100 125 150 175
Tc ( °C )
Iih(uA)
5
4.5
4
Vin=2.1V
3.5
3
2.5
2
1.5
1
0.5
0
-50 -250255075 100 125 150 175
Tc ( °C )
Figure 13. Input clamp voltageFigure 14. Input high level
Vicl (V)
7
6.75
6.5
6.25
5.75
5.5
5.25
Iin=1mA
6
5
-50 -250255075 100 125 150 175
Tc (° C)
Vih (V)
4
3.5
3
2.5
2
1.5
1
0.5
0
-50 -250255075 100 125 150 175
Tc ( °C )
Figure 15. Input low levelFigure 16. Input hysteresis voltage
Vil (V)
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-50 -250255075 100 125 150 175
Tc ( °C )
18/32 Doc ID 12581 Rev 10
Vhyst (V)
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
-50 -250255075 100 125 150 175
Tc ( °C )
Page 19
VND5025AK-EElectrical specification
Figure 17. On-state resistance vs T
Ron (mOhm)
100
90
80
70
60
50
40
30
20
10
0
Iout=3A
Vcc=13V
-50 -250255075 100 125 150 175
case
Figure 18. On-state resistance vs V
Ron (mOhm)
80
70
60
50
40
30
20
10
0
0510152025303540
Tc ( °C)
Figure 19. Undervoltage shutdownFigure 20. I
Vusd (V)
16
14
12
10
8
6
4
2
0
-50 -250255075 100 125 150 175
Tc ( °C )
Ilimh (A)
100
90
80
70
60
50
40
30
20
10
0
-50 -250255075 100 125 150 175
LIMH
Vcc=13V
vs T
CC
Tc=150°C
Tc= 125°C
Tc= 25 °C
Tc= -4 0° C
Vcc (V)
case
Tc (°C)
Figure 21. Turn-on voltage slopeFigure 22. Turn-off voltage slope
(dVout/dt)on (V/ms)
1000
900
800
700
600
500
400
300
200
100
0
-50 -250255075 100 125 150 175
Vcc=13V
Rl=4.3Ohm
Tc ( ° C)
Doc ID 12581 Rev 1019/32
(dVout/dt)off (V/ms)
1000
900
800
700
600
500
400
300
200
100
0
-50 -250255075 100 125 150 175
Vcc=13V
Rl=4.3Ohm
Tc ( °C )
Page 20
Electrical specificationVND5025AK-E
Figure 23. CS_DIS high level voltageFigure 24. CS_DIS low level voltage
Vcsdh (V)
4
3.5
3
2.5
2
1.5
1
0.5
0
-50 -250255075 100 125 150 175
Tc ( °C )
Figure 25. CS_DIS clamp voltage
Vcsdcl (V)
8
7.5
6.5
5.5
4.5
Icsd=1mA
7
6
5
4
-50 -250255075 100 125 150 175
Tc ( °C )
Vcsdl (V)
4
3.5
3
2.5
2
1.5
1
0.5
0
-50 -250255075 100 125 150 175
Tc ( °C )
20/32 Doc ID 12581 Rev 10
Page 21
VND5025AK-EApplication information
3 Application information
Figure 26. Application schematic
+5V
V
CC
µC
R
prot
R
prot
CS_DIS
INPUT
OUTPUT
D
ld
R
prot
C
EXT
CURRENT SENSE
R
SENSE
V
GND
GND
R
GND
D
GND
Note:Channel 2 has the same internal circuit as channel 1.
3.1 GND protection network against reverse battery
This section provides two solutions for implementing a ground protection network against
reverse battery.
3.1.1 Solution 1: resistor in the ground line (R
This first solution can be used with any type of load.
The following formulas indicate how to dimension the R
1.R
2. R
where -I
maximum rating section of the device datasheet.
≤ 600mV / (I
GND
≥ (-VCC) / (-I
GND
is the DC reverse ground pin current and can be found in the absolute
GND
S(on)max
GND
)
)
GND
only)
GND
resistor:
Power Dissipation in R
P
=(-VCC)2/R
D
(when VCC< 0 during reverse battery situations) is:
GND
GND
This resistor can be shared among several different HSDs. Please note that the value of this
resistor is calculated with formula (1), where I
state currents of the different devices.
S(on)max
Please note that if the microprocessor ground is not shared by the device ground, the R
produces a shift (I
S(on)max
* R
) in the input thresholds and the status output values. This
GND
becomes the sum of the maximum on-
GND
shift varies depending on how many devices are ON in the case of several high-side drivers
sharing the same R
GND
.
Doc ID 12581 Rev 1021/32
Page 22
Application informationVND5025AK-E
If the calculated power dissipation leads to a large resistor or several devices have to share
the same resistor, then ST suggests to utilize the following Solution 2.
3.1.2 Solution 2: diode (D
) in the ground line
GND
If the device drives an inductive load, insert a resistor (R
This small signal diode can be safely shared among several different HSDs. Also in this
case, the presence of the ground network produces a shift (600mV) in the input threshold
and in the status output values if the microprocessor ground is not common to the device
ground. This shift does not vary if more than one HSD shares the same diode/resistor
network.
3.2 Load dump protection
Dld is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds the
V
maximum DC rating. The same applies if the device is subject to transients on the VCC
CC
line that are greater than the ones shown in the ISO 7637-2:2004E table.
3.3 MCU I/Os protection
If a ground protection network is used and negative transients are present on the VCC line,
the control pins are pulled negative. ST suggests to insert an in-line resistor (R
prevent the µC I/Os pins from latch-up.
The value of these resistors is a compromise between the leakage current of µC and the
current required by the HSD I/Os (input levels compatibility) with the latch-up limit of µC
I/Os.
=1kΩ) in parallel to D
GND
≈
prot
GND
) to
.
-V
CCpeak/Ilatchup
≤ R
prot
≤ (V
OHµC-VIH-VGND
) / I
IHmax
Calculation example:
For V
CCpeak
5k
Ω ≤ R
Recommended values: R
= -100V and I
≤ 180kΩ
prot
latchup
=10kΩ, C
prot
≥ 20mA; V
EXT
≥ 4.5V
OHµC
=10nF.
22/32 Doc ID 12581 Rev 10
Page 23
VND5025AK-EApplication information
3.4 Maximum demagnetization energy (VCC=13.5V)
Figure 27. Maximum turn-off current versus inductance (for each channel)
100
A
B
10
I (A)
1
0,1110100L (mH)
C
A:
T
= 150°C single pulse
jstart
B: T
C:
VIN, I
= 100°C repetitive pulse
jstart
T
= 125°C repetitive pulse
jstart
L
Note:Values are generated with R
In case of repetitive pulses, T
must not exceed the temperature specified above for curves A and B.
DemagnetizationDemagnetizationDemagnetization
=0 Ω.
L
(at beginning of each demagnetization) of every pulse
jstart
t
Doc ID 12581 Rev 1023/32
Page 24
Package and thermal dataVND5025AK-E
4 Package and thermal data
4.1 PowerSSO-24™ thermal data
Figure 28. PowerSSO-24™ PC board
Note:Layout condition of R
area = 77mm x 86mm, PCB thickness = 1.6mm, Cu thickness = 70µm (front and back side),
Copper areas: from minimum pad layout to 8cm
Figure 29. R
thj-amb
ON)
RTHj_amb(°C/W)
55
50
45
40
35
30
0246810
and Zth measurements (PCB: Double layer, Thermal Vias, FR4
th
2
).
vs PCB copper area in open box free air condition (one channel
PCB Cu heatsink area (cm^2)
24/32 Doc ID 12581 Rev 10
Page 25
VND5025AK-EPackage and thermal data
Figure 30. PowerSSO-24™ thermal impedance junction to ambient single pulse (one
channel ON)
ZTH (°C/W)
1000
100
Footprint
2 cm
8 cm
10
1
0.1
0.00010.0010.010.11101001000
Time (s)
Equation 1: pulse calculation formula
Z
THδ
where δ = t
RTHδ Z
/T
P
THtp
1 δ–()+⋅=
Figure 31. Thermal fitting model of a double channel HSD in PowerSSO-24™
2
2
(1)
1. The fitting model is a semplified thermal tool and is valid for transient evolutions where the embedded
protections (power limitation or thermal cycling during thermal shutdown) are not triggered.
Doc ID 12581 Rev 1025/32
Page 26
Package and thermal dataVND5025AK-E
Table 15.Thermal parameters
Area/Island (cm2)Footprint28
R1 (°C/W)0.28
R2 (°C/W)0.9
R3 (°C/W)6
R4 (°C/W)7.7
R5 (°C/W)998
R6 (°C/W)281710
R7 (°C/W)0.28
R8 (°C/W)0.9
C1 (W.s/°C)0.001
C2 (W.s/°C)0.003
C3 (W.s/°C)0.025
C4 (W.s/°C)0.75
C5 (W.s/°C)149
C6 (W.s/°C)2.2517
C7 (W.s/°C)0.001
C8 (W.s/°C)0.003
26/32 Doc ID 12581 Rev 10
Page 27
VND5025AK-EPackage and packing information
5 Package and packing information
5.1 ECOPACK® packages
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com
ECOPACK
®
is an ST trademark.
5.2 Package mechanical data
Figure 32. PowerSSO-24™ package dimensions
.
Doc ID 12581 Rev 1027/32
Page 28
Package and packing informationVND5025AK-E
Table 16.PowerSSO-24™ mechanical data
Millimeters
Symbol
MinTypMax
A2.45
A22.152.35
a100.1
b0.330.51
c0.230.32
D10.1010.50
E7.47.6
e0.8
e38.8
F2.3
G0.1
H10.110.5
h0.4
k0°8°
L0.550.85
O1.2
Q0.8
S2.9
T3.65
U1.0
N10°
X4.14.7
Y6.57.1
28/32 Doc ID 12581 Rev 10
Page 29
VND5025AK-EPackage and packing information
5.3 Packing information
Figure 33. PowerSSO-24™ tube shipment (no suffix)
Base Qty49
Bulk Qty1225
C
B
Tube length (±0.5)532
A3.5
B13.8
C (±0.1)0.6
A
Figure 34. PowerSSO-24™ tape and reel shipment (suffix “TR”)
REEL DIMENSIONS
Base Qty1000
Bulk Qty1000
A (max)330
B (min)1.5
C (±0.2)13
F20.2
G (+2 / -0)24.4
N (min)100
T (max)30.4
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
Updated Table 16: PowerSSO-24™ mechanical data:
– Deleted G1 row
– Added O, Q, S, T and U rows
Doc ID 12581 Rev 1031/32
Page 32
VND5025AK-E
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