Double channel high side driver with analog current sense
for automotive applications
Max supply voltageV
Operating voltage rangeV
Max on-state resistance (per ch.)
Current limitation (typ)I
Off-state supply current (typ.)I
1. Typical value with all loads connected.
■ General features
– Inrush current active management by
power limitation
– Very low standby current
– 3.0 V CMOS compatible input
– Optimized electromagnetic emission
– Very low electromagnetic susceptibility
– In compliance with the 2002/95/EC
european directive
■ Diagnostic functions
– Proportional load current sense
– High current sense precision for wide range
currents
– Current sense disable
– Thermal shutdown indication
– Very low current sense leakage
■ Protections
– Undervoltage shutdown
– Overvoltage clamp
– Output stuck to Vcc detection
– Load current limitation
– Self limiting of fast thermal transients
– Protection against loss of ground and loss
of V
CC
– Thermal shutdown
Table 1. Device summary
Package
PowerSSO-24VND5012AK-EVND5012AKTR-E
CC
CC
R
ON
LIMH
S
41 V
4.5 to 36 V
12 mΩ
60 A
(1)
2µA
PowerSSO-24
– Reverse battery protection (see Application
schematic)
– Electrostatic discharge protection
Application
■ All types of resistive, inductive and capacitive
loads
Description
The VND5012AK-E a monolithic device made
using STMicroelectronics VIPower M0-5
technology. It is intended for driving resistive or
inductive loads with one side connected to
ground. Active V
device against low energy spikes (see ISO7637
transient compatibility table). This device
integrates an analog current sense which delivers
a current proportional to the load current
(according to a known ratio) when CS_DIS is
driven low or left open. When CS_DIS is driven
high, the CURRENT SENSE pin is in a high
impedance condition. Output current limitation
protects the device in overload condition. In case
of long overload duration, the device limits the
dissipated power to safe level up to thermal
shutdown intervention. Thermal shutdown with
automatic restart allows the device to recover
normal operation as soon as fault condition
disappears.
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to the conditions in table below for extended
periods may affect device reliability. Refer also to the STMicroelectronics SURE Program
and other relevant quality document.
Table 4.Absolute maximum ratings
SymbolParameterValueUnit
DC supply voltage 41V
CC
Reverse DC supply voltage0.3V
CC
DC reverse ground pin current200mA
GND
DC output currentInternally limitedA
Reverse DC output current -30A
OUT
DC Input current -1 to 10mA
I
IN
-V
-I
I
-I
V
OUT
I
CSD
-I
CSENSE
V
CSENSE
DC current sense disable input current -1 to 10mA
DC reverse CS pin current 200mA
V
Current sense maximum voltage
CC
+V
-41
CC
V
V
Doc ID 12285 Rev 77/31
Page 8
Electrical specificationsVND5012AK-E
Table 4.Absolute maximum ratings (continued)
SymbolParameterValueUnit
Maximum switching energy
E
V
V
MAX
(L=1.25 mH; R
= I
I
OUT
limL
(Typ.))
=0 Ω; V
L
=13.5 V; T
bat
jstart
=150 °C;
Electrostatic discharge
(Human body model: R= 1.5 KΩ; C= 100 pF)
– INPUT
– CURRENT SENSE
ESD
–CS_DIS
–OUTPUT
–V
CC
Charge device model (CDM-AEC-Q100-011)750V
ESD
Junction operating temperature-40 to 150°C
T
j
508mJ
4000
2000
4000
5000
5000
V
V
V
V
V
T
stg
2.2 Thermal data
Table 5.Thermal data
SymbolParameterMax valueUnit
R
thj-case
R
thj-amb
Storage temperature-55 to 150 °C
Thermal resistance junction-case (max) (With one
channel on)
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
DC short circuit current
Short circuit current
during thermal cycling
Shutdown temperature150175200°C
Reset temperature
R
Thermal reset of
STATUS
Thermal hysteresis
TSD -TR
)
(T
Turn-off output voltage
clamp
Output voltage drop
limitation
CC
5V<V
V
CC
I
OUT
<36 V
CC
=13 V TR<Tj<T
=2 A; VIN=0;
L=6 mH
I
= 0.4 A;
OUT
= -40 °C...+150 °C
T
j
(see Figure 26)
TSD
426084
84
24A
TRS + 1TRS + 5
135°C
7°C
VCC-41VCC-46VCC-52
25mV
A
A
°C
V
10/31 Doc ID 12285 Rev 7
Page 11
VND5012AK-EElectrical specifications
Table 10.Current sense (8V<VCC<16V)
SymbolParameterTest conditionsMin.Typ. Max. Unit
I
K
K
dK1/K
K
I
0
OUT/ISENSE
I
1
OUT/ISENSE
Current sense ratio
(1)
1
drift
I
2
OUT/ISENSE
= 0.25 A; V
OUT
V
=0 V;
CSD
= -40°C...150°C
T
j
I
= 5 A; V
OUT
= -40°C...150°C
T
j
I
=5 A; V
OUT
= 25 °C...150 °C
T
j
= 5 A; V
I
OUT
= -40°C to 150°C
T
J
I
= 10 A; V
OUT
= -40°C...150°C
T
j
= 10 A; V
I
OUT
SENSE
SENSE
SENSE
SENSE
SENSE
Tj= 25 °C...150 °C
SENSE
=0.5 V; V
=0.5 V; V
= 0.5 V; V
=4 V; V
=4 V; V
=0.5 V;
CSD
CSD
CSD
CSD
CSD
=0 V;
=0 V;
=0 V;
=0 V;
=0 V;
2780 5580 8390
3590
5100
6630
4110
5100
6090
-8+8%
4400
5090
5930
4600
5090
5590
dK2/K
K
dK3/K
I
SENSE0
Current sense ratio
(1)
2
drift
I
3
OUT/ISENSE
Current sense ratio
(1)
3
drift
Analog sense
leakage current
= 10 A; V
I
OUT
= -40°C to 150°C
T
J
I
= 25 A; V
OUT
= -40°C...150°C
T
j
I
= 25 A; V
OUT
= 25 °C...150 °C
T
j
= 25 A; V
I
OUT
= -40°C to 150°C
T
J
I
=0 A; V
OUT
V
V
I
OUT
V
CSD
CSD
CSD
SENSE
=5 V; VIN=0 V; Tj=-40 °C...150 °C
=0 V; VIN=5 V; Tj=-40 °C...150 °C
=2 A; V
SENSE
=5 V; VIN=5 V; Tj=-40 °C...150 °C
SENSE
SENSE
SENSE
SENSE
= 4 V; V
=4 V; V
=4 V; V
= 4 V; V
=0 V;
=0 V;
CSD
CSD
CSD
CSD
=0 V;
=0 V;
=0 V;
=0 V;
-5+5%
4820
5060
5420
4860
5060
5250
-4+4%
0
0
0
1
2
1
µA
µA
µA
Open-load on-state
current detection
I
OL
V
= 5 V, I
IN
= 5 µA1045mA
SENSE
threshold
V
SENSE
Max analog sense
output voltage
I
OUT
=15 A; V
=0 V5V
CSD
Analog sense
V
SENSEH
output voltage in
over temperature
V
CC
= 13 V; R
= 3.9 KΩ9V
SENSE
condition
Analog sense
I
SENSEH
output current in
over temperature
V
CC
= 13 V; V
= 5 V8mA
SENSE
condition
t
DSENSE1H
Delay response
time from falling
edge of CS_DIS pin
V
I
<4 V, 1.5 A<Iout<25 A
SENSE
= 90 % of I
SENSE
(see Figure 4)
SENSE max
50100µs
Doc ID 12285 Rev 711/31
Page 12
Electrical specificationsVND5012AK-E
Table 10.Current sense (8V<VCC<16V) (continued)
SymbolParameterTest conditionsMin.Typ. Max. Unit
t
DSENSE1L
t
DSENSE2H
Δ
t
DSENSE2H
t
DSENSE2L
Delay response
time from rising
edge of CS_DIS pin
Delay response
time from rising
edge of INPUT pin
Delay response
time between rising
edge of output
current and rising
edge of current
sense
Delay response
time from falling
edge of INPUT pin
V
I
(see Figure 4)
V
I
(see Figure 4)
V
I
I
I
V
I
(see Figure 4)
<4V, 1.5A<Iout<25A
SENSE
= 10% of I
SENSE
<4 V, 1.5 A<Iout<25 A
SENSE
= 90 % of I
SENSE
<4 V,
SENSE
=90% of I
SENSE
=90% of I
OUT
OUTMAX
= 5 A (see Figure 5)
<4 V, 1.5 A<Iout<25 A
SENSE
=10 % of I
SENSE
OUTMAX
SENSE max
SENSE max
SENSEMAX,
SENSE max
1. Parameter guaranteed by design, it is not tested.
Figure 4.Current sense delay characteristics
INPUT
CS_DIS
520µs
270400µs
300µs
100250µs
LOAD CURRENT
SENSE CURRENT
t
DSENSE2H
t
DSENSE1L
t
DSENSE1H
t
DSENSE2L
12/31 Doc ID 12285 Rev 7
Page 13
VND5012AK-EElectrical specifications
Figure 5.Delay response time between rising edge of output current and rising
edge of current sense (CS enabled)
V
IN
Δt
DSENSE2H
t
I
OUT
I
SENSE
90% I
OUTMAX
I
OUTMAX
I
SENSEMAX
t
90% I
SENSEMAX
t
Doc ID 12285 Rev 713/31
Page 14
Electrical specificationsVND5012AK-E
Figure 6.I
OUT/ISENSE
7000
6500
6000
5500
5000
4500
4000
3500
3000
510152025
vs I
OUT
max Tj = -40°C to 150°C
max Tj= 25°C to 150°C
min Tj= 25°C to 150°C
min Tj= -40°C to 150°C
typical value
Figure 7.Maximum current sense ratio drift vs load current
dk/k(%)
15
10
5
0
-5
-10
-15
5 10152025
Note:Parameter guaranteed by design; it is not tested.
I
OUT
(A)
14/31 Doc ID 12285 Rev 7
Page 15
VND5012AK-EElectrical specifications
Table 11.Truth table
ConditionsInputOutputSense (V
Normal operation
L
H
L
H
CSD
0
Nominal
=0V)
(1)
Over temperature
Undervoltage
Short circuit to GND
(R
≤ 10 mΩ)
sc
Short circuit to V
CC
Negative output voltage
clamp
1. If the V
and external circuit.
is high, the SENSE output is at a high impedance, its potential depends on leakage currents
CAll functions of the device are performed as designed after exposure to disturbance.
E
One or more functions of the device are not performed as designed after exposure to
disturbance and cannot be returned to proper operation without replacing the device.
Figure 10. Waveforms
INPUT
CS_DIS
LOAD CURRENT
SENSE CURRENT
V
CC
INPUT
CS_DIS
LOAD CURRENT
SENSE CURRENT
INPUT
CS_DIS
LOAD VOLTAGE
LOAD CURRENT
SENSE CURRENT
V
USD
NORMAL OPERATION
UNDERVOLTAGE
SHORT TO V
<Nominal
V
USDhyst
CC
<Nominal
OVERLOAD OPERATION
T
TSD
T
j
T
R
T
RS
INPUT
CS_DIS
LOAD CURRENT
SENSE CURRENT
current
limitation
power
limitation
SHORTED LOADNORMAL LOAD
thermal cycling
I
LIMH
I
LIML
V
SENSEH
Doc ID 12285 Rev 717/31
Page 18
Electrical specificationsVND5012AK-E
2.4 Electrical characteristics curves
Figure 11. Off-state output currentFigure 12. High level input current
Figure 13. Input clamp voltageFigure 14. Input high level
Figure 15. Input low levelFigure 16. Input hysteresis voltage
18/31 Doc ID 12285 Rev 7
Page 19
VND5012AK-EElectrical specifications
Figure 17. On-state resistance vs T
case
Figure 18. On-state resistance vs V
Figure 19. Undervoltage shutdownFigure 20. I
LIMH
vs T
CC
case
Figure 21. Turn-on voltage slopeFigure 22. Turn-off voltage slope
Doc ID 12285 Rev 719/31
Page 20
Electrical specificationsVND5012AK-E
Figure 23. CS_DIS high level voltageFigure 24. CS_DIS clamp voltage
Figure 25. CS_DIS low level voltage
20/31 Doc ID 12285 Rev 7
Page 21
VND5012AK-EApplication information
3 Application information
Figure 26. Application schematic
+5V
V
CC
R
prot
μ
C
R
prot
R
prot
R
SENSE
C
ext
CS_DIS
INPUT
CURRENT SENSE
D
ld
OUTPUT
GND
R
GND
GND
D
GND
V
Note:Channel 2 has the same internal circuit as channel 1.
3.1 GND Protection network against reverse battery
3.1.1 Solution 1: resistor in the ground line (R
This can be used with any type of load.
The following is an indication on how to dimension the R
1.R
2. R
where -I
maximum rating section of the device datasheet.
Power Dissipation in R
P
= (-VCC)2/R
D
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I
maximum on-state currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground then the
R
GND
values. This shift will vary depending on how many devices are ON in the case of several
high side drivers sharing the same R
≤ 600 mV / (I
GND
≥ (−VCC) / (-I
GND
is the DC reverse ground pin current and can be found in the absolute
GND
S(on)max
GND
GND
).
)
(when VCC<0: during reverse battery situations) is:
GND
will produce a shift (I
S(on)max
* R
GND
GND
) in the input thresholds and the status output
.
GND
only)
GND
S(on)max
resistor.
becomes the sum of the
Doc ID 12285 Rev 721/31
Page 22
Application informationVND5012AK-E
If the calculated power dissipation leads to a large resistor or several devices have to share
the same resistor then ST suggests to utilize Solution 2 (see below).
3.1.2 Solution 2: diode (D
A resistor (R
=1 kΩ) should be inserted in parallel to D
GND
) in the ground line
GND
inductive load.
This small signal diode can be safely shared amongst several different HSDs. Also in this
case, the presence of the ground network will produce a shift (≈600mV) in the input
threshold and in the status output values if the microprocessor ground is not common to the
device ground. This shift will not vary if more than one HSD shares the same diode/resistor
network.
3.2 Load dump protection
Dld is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds the
V
max DC rating. The same applies if the device is subject to transients on the VCC line
CC
that are greater than the ones shown in the ISO 7637-2: 2004(E) table.
3.3 MCU I/Os protection
If a ground protection network is used and negative transient are present on the VCC line,
the control pins will be pulled negative. ST suggests to insert a resistor (R
prevent the µC I/Os pins to latch-up.
The value of these resistors is a compromise between the leakage current of µC and the
current required by the HSD I/Os (input levels compatibility) with the latch-up limit of µC
I/Os.
if the device drives an
GND
prot
) in line to
-V
CCpeak/Ilatchup
≤ R
prot
≤ (V
OHµC-VIH-VGND
Calculation example:
For V
5kΩ ≤ R
Recommended values: R
22/31 Doc ID 12285 Rev 7
CCpeak
prot
= - 100 V and I
≤ 180 kΩ.
latchup
=10 kΩ, C
prot
≥ 20 mA; V
EXT
) / I
IHmax
OHµC
=10 nF.
≥ 4.5 V
Page 23
VND5012AK-EApplication information
3.4 Maximum demagnetization energy (VCC = 13.5V)
Figure 27. Maximum turn-off current versus inductance (for each channel)
100
A
B
C
10
I (A)
1
0,1110100L (mH)
A: T
jstart
B: T
jstart
C: T
jstart
V
, I
IN
L
Note:Values are generated with R
demagnetization) of every pulse must not exceed the temperature specified above for
curves A and B.
= 150°C single pulse
= 100°C repetitive pulse
= 125°C repetitive pulse
DemagnetizationDemagnetizationDemagnetization
=0 Ω.In case of repetitive pulses, T
L
(at beginning of each
jstart
t
Doc ID 12285 Rev 723/31
Page 24
Package and PCB thermal dataVND5012AK-E
4 Package and PCB thermal data
4.1 PowerSSO-24 thermal data
Figure 28. PowerSSO-24 PC board
Note:Layout condition of R
area= 77 mm x 86 mm,PCB thickness=1.6 mm, Cu thickness=70 µm (front and back side),
Copper areas: from minimum pad layout to 8 cm
Figure 29. R
thj-amb
on)
RTHj_amb(°C/W)
55
50
45
40
35
30
0246810
and Zth measurements (PCB: Double layer, Thermal Vias, FR4
th
2
).
vs PCB copper area in open box free air condition (one channel
PCB Cu heatsink area (cm^2)
24/31 Doc ID 12285 Rev 7
Page 25
VND5012AK-EPackage and PCB thermal data
Figure 30. PowerSSO-24 thermal impedance junction ambient single pulse (one
channel on)
ZTH (° C/ W)
100
foot pr int
2
2 cm
2
8 cm
10
1
0,1
0,00010,0010,010,11101001000
Time ( s)
Equation 1: pulse calculation formula
Z
THδ
where δ = t
Figure 31. Thermal fitting model of a single channel HSD in PowerSSO-24
R
TH
P
δZ
/T
THtp
1 δ–()+⋅=
(a)
a. The fitting model is a simplified thermal tool and is valid for transient evolutions where the embedded
protections (power limitation or thermal cycling during thermal shutdown) are not triggered.
Doc ID 12285 Rev 725/31
Page 26
Package and PCB thermal dataVND5012AK-E
Table 15.Thermal parameter
Area/island (cm2)Footprint28
R1 (°C/W)0.1
R2 (°C/W)0.3
R3 (°C/W)6
R4 (°C/W)7.7
R5 (°C/W)998
R6 (°C/W)281710
R7 (°C/W)0.1
R8 (°C/W)0.3
C1 (W.s/°C)0.0025
C2 (W.s/°C)0.0024
C3 (W.s/°C)0.025
C4 (W.s/°C)0.75
C5 (W.s/°C)149
C6 (W.s/°C)2.2517
C7 (W.s/°C)0.0025
C8 (W.s/°C)0.0024
26/31 Doc ID 12285 Rev 7
Page 27
VND5012AK-EPackage and packing information
5 Package and packing information
5.1 ECOPACK® packages
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com
ECOPACK® is an ST trademark.
5.2 PowerSSO-24 package mechanical data
Figure 32. PowerSSO-24 package dimensions
.
Table 16.PowerSSO-24 mechanical data
Millimeters
Symbol
Min.Typ.Max.
A2.152.47
A22.152.40
a100.1
b0.330.51
Doc ID 12285 Rev 727/31
Page 28
Package and packing informationVND5012AK-E
Table 16.PowerSSO-24 mechanical data (continued)
Symbol
Min.Typ.Max.
c0.230.32
D10.1010.50
E7.47.6
e0.8
e38.8
G0.1
G10.06
H10.110.5
h0.4
L0.550.85
N10deg
Millimeters
X4.14.7
Y6.57.1
5.3 PowerSSO-24 packing information
Figure 33. PowerSSO-24 tube shipment (no suffix)
Base Q.ty49
Bulk Q.ty1225
C
B
A
Tube length (± 0.5)532
A3.5
B13.8
C (± 0.1)0.6
All dimensions are in mm.
28/31 Doc ID 12285 Rev 7
Page 29
VND5012AK-EPackage and packing information
Figure 34. PowerSSO-24 tape and reel shipment (suffix “TR”)
Reel dimensions
Base Q.ty1000
Bulk Q.ty1000
A (max)330
B (min)1.5
C (± 0.2)13
F20.2
G (+ 2 / -0)24.4
N (min)100
Tape dimensions
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
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