Double 4mΩ high side driver with analog current sense
for automotive applications
PQFN
12x12 Power lead-less
Max transient supply voltageV
Operating voltage rangeV
Max on-state resistanceR
Current limitation (typ)I
Off-state supply currentI
1. Typical value with all loads connected.
■ General
– Inrush current active management by
power limitation
– Very low standby current
– 3.0 V CMOS compatible input
– Optimized electromagnetic emission
– Very low electromagnetic susceptibility
– In compliance with the 2002/95/EC
European directive
■ Diagnostic functions
– Proportional load current sense
– Current sense disable
– Thermal shutdown indication
■ Protection
– Undervoltage shutdown
– Overvoltage clamp
– Load current limitation
– Thermal shutdown
– Self limiting of fast thermal transients
– Protection against loss of ground and loss
of V
CC
Table 1.Devices summary
Package
PQFN-12x12 power lead-less -VND5004BTR-EVND5004B-E
MultiPowerSO-30VND5004BSP30-EVND5004BSP30TR-E-
CC
CC
ON
LIMH
S
41 V
4.5 to 28 V
MultiPowerSO-30
4mΩ
100 A
2µA
(1)
– Reverse battery protection with self switch
on of the Power MOSFET
(see Figure 22)
– Electrostatic discharge protection
application
■ All types of resistive, inductive and capacitive
loads
■ Suitable for power management applications
Description
The VND5004BTR-E and VND5004BSP30-E are
devices made using STMicroelectronics VIPower
technology. They are intended for driving resistive
or inductive loads with one side connected to
ground. Active V
dump protection circuit protect the devices
against transients on the Vcc pin (see ISO7637
transient compatibility table). These devices
integrate an analog current sense which delivers
a current proportional to the load current
(according to a known ratio) when CS_DIS is
driven low or left open. When CS_DIS is driven
high, the CURRENT SENSE pin is high
impedance. Output current limitation protects the
devices in overload condition. In case of long
duration overload, the devices limit the dissipated
power to a safe level up to thermal shutdown
intervention. Thermal shutdown with automatic
restart allows the device to recover normal
operation as soon as a fault condition disappears.
Stress values that exceed those listed in the “Absolute maximum ratings” table can cause
permanent damage to the device. These are stress ratings only, and operation of the device
at these, or any other conditions greater than those, indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics sure
program and other relevant quality documents.
Table 4.Absolute maximum ratings
SymbolParameterValueUnit
OUTPUT1,2
CURRENT
SENSE1,2
GND
I
GND
I
OUT1,2
I
SENSE1,2
V
SENSE1,2
V
OUT1,2
V
CC
V
CCPK
-V
I
OUT
- I
OUT
I
IN
I
CSD
V
CSENSE
CC
DC supply voltage28V
Transient supply voltage (T<400 ms, R
>0.5 Ω)41V
load
Reverse DC supply voltage16V
DC output currentInternally limitedA
Reverse DC output current 70A
DC input current -1 to 10mA
DC current sense disable input current -1 to 10mA
Current sense maximum voltage (Vcc>0 V)
Vcc-41
+V
CC
V
V
Maximum switching energy (single pulse)
E
V
MAX
ESD
(L=0.3 mH; R
= I
I
OUT
limL
(typ.))
=0 Ω; V
L
=13.5 V; T
bat
jstart
=150 ºC;
Electrostatic discharge (Human Body Model: R=1.5 kΩ;
C=100 pF)
Analog sense output
voltage in over
temperature
condition
Analog sense output
current in over
temperature
condition
Delay response time
from falling edge of
CS_DIS pin
Delay response time
from rising edge of
CS_DIS pin
=30A; V
OUT
= -40°C...150°C
T
j
= 25°C...150°C
T
j
I
=0 A; V
OUT
=5 V; VIN=0 V; Tj=-40 °C to 150 °C
V
CSD
V
=0 V; VIN=5 V; Tj=-40 °C to 150°C00
CS D
=45 A; V
I
OUT
=13 V; R
V
CC
Vcc=13 V; V
V
I
<4 V, 5 A<Iout<30 A
SENSE
=90% of I
SENSE
(see Figure 4)
V
I
<4V, 5A<Iout<30A
SENSE
=10% of I
SENSE
(see Figure 4)
SENSE
SENSE
=4V; V
=0 V;
CSD
=0V;
12400
14000
16500
16500
19000
19000
5
400µAµA
=0 V; R
CSD
=3.9 kΩ9V
SENSE
=5 V8mA
SENSE
SENSE max
SENSE max
=3.9 kΩ 5V
SENSE
50100µs
520µs
t
DSENSE2H
t
DSENSE2L
Delay response time
from rising edge of
INPUT pin
Delay response time
from falling edge of
INPUT pin
V
I
(see Figure 4)
V
I
(see Figure 4)
<4V, 5A<Iout<30A
SENSE
=90% of I
SENSE
<4V, 5A<Iout<30A
SENSE
=10% of I
SENSE
SENSE max
SENSE max
270600µs
100250µs
1. For each channel.
2. PowerMOS leakage included.
3. To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals
must be used together with a proper software strategy. If the device is subjected to abnormal conditions, this software must
limit the duration and number of activation cycles.
CAll functions of the device are performed as designed after exposure to disturbance.
E
One or more functions of the device are not performed as designed after exposure to
disturbance and cannot be returned to proper operation without replacing the device.
Figure 19. CS_DIS high level voltageFigure 20. CS_DIS clamp voltage
Vcsdh (V)
4
3.5
3
2.5
2
1.5
1
0.5
0
-50 -250255075100 125 150 175
Tc (° C)
Figure 21. CS_DIS low level voltage
Vcsdl (V)
4
3.5
3
2.5
2
1.5
1
0.5
0
-50 -250255075100 125 150 175
Tc (° C)
Vcsdcl (V)
8
7.5
7
6.5
6
5.5
5
4.5
4
-50 -250255075100 125 150 175
Tc (° C)
Doc ID 15702 Rev 117/33
Page 18
Application informationVND5004B-E, VND5004BSP30-E
3 Application information
Figure 22. Application schematic
+5V
MCU
R
prot
R
prot
R
prot
R
SENSE
C
ext
CS_DIS
INPUT
CURRENT SENSE
45V
3.1 Microcontroller I/Os protection
When negative transients are present on the VCC line, the control pins will be pulled
negative to approximately -1.5 V.
ST suggests the insertion of resistors (R
latching up.
) in the lines to prevent the µC I/Os pins from
prot
GND
V
20V
CC
OUTPUT
D
ld
The values of these resistors provide a compromise between the leakage current of the µC,
the current required by the HSD I/Os (input levels compatibility) and the latch-up limit of the
µC I/Os.
-V
CCpeak/Ilatchup
≤ R
prot
≤ (V
OHµC-VIH
Calculation example:
For V
75 Ω ≤ R
Recommended values: R
CCpeak
prot
= - 1.5 V and I
≤ 240 kΩ.
latchup
=10 kΩ, C
prot
≥ 20 mA; V
3.2 Load dump protection
18/33 Doc ID 15702 Rev 1
Dld is necessary (voltage transient suppressor) if the load dump peak voltage exceeds the
V
max rating. The same applies if the device will be subject to transients on the VCC
CCPK
line that are greater than the ones shown in the ISO 7637-2: 2004(E) table.
) / I
IHmax
EXT
OHµC
=
10 nF
≥ 4.5 V
Page 19
VND5004B-E, VND5004BSP30-EApplication information
3.3 Maximum demagnetization energy (VCC = 13.5 V)
Figure 23. Maximum turn-off current versus inductance
100
A
B
C
10
I (A)
1
110100L (mH)
VIN, I
A: T
B: T
C: T
L
= 150°C single pulse
jstart
= 100°C repetitive pulse
jstart
= 125°C repetitive pulse
jstart
Note:Values are generated with R
In case of repetitive pulses, T
must not exceed the temperature specified above for curves A and B.
DemagnetizationDemagnetizationDemagnetization
= 0 Ω.
L
(at beginning of each demagnetization) of every pulse
jstart
t
Doc ID 15702 Rev 119/33
Page 20
Package and PC board thermal dataVND5004B-E, VND5004BSP30-E
4 Package and PC board thermal data
4.1 MultiPowerSO-30 thermal data
Figure 24. MultiPowerSO-30 PC board
Note:Layout condition of R
area= 58 mm x 58 mm, PCB thickness=2 mm, Cu thickness=70 µm (front and back side),
Copper areas: from minimum pad lay-out to 4 cm
Figure 25.
RTHj_amb(°C/W)
R
thj-amb
60
55
50
45
40
35
012345
and Zth measurements (PCB: Double layer, Thermal Vias, FR4
th
2
).
vs PCB copper area in open box free air condition (one channel on)
PCB Cu heatsink area (cm^2)
20/33 Doc ID 15702 Rev 1
Page 21
VND5004B-E, VND5004BSP30-EPackage and PC board thermal data
Figure 26. MultiPowerSO-30 thermal impedance junction ambient single pulse (one
channel on)
ZT H ( °C /W)
1000
100
Footprint
4 cm
10
1
0.1
0.01
0.00010.0010.010.11101001000
Time (s)
Figure 27. Thermal fitting model of a double channel HSD in MultiPowerSO-30
2
(a)
a. The fitting model is a simplified thermal tool and is valid for transient evolutions where the embedded
protections (power limitation or thermal cycling during thermal shutdown) are not triggered.
Doc ID 15702 Rev 121/33
Page 22
Package and PC board thermal dataVND5004B-E, VND5004BSP30-E
Equation 1: pulse calculation formula
Z
THδ
where δ = t
Table 11.Thermal parameters for MultiPowerSO-30
R
TH
P
δZ
/T
THtp
1 δ–()+⋅=
Area/island (cm2)Footprint4
R1 (°C/W)0.05
R2 (°C/W)0.3
R3 (°C/W)0.5
R4 (°C/W)1.3
R5 (°C/W)14
R6 (°C/W)44.723.7
R7 (°C/W)0.05
R8 (°C/W)0.3
C1 (W.s/°C)0.005
C2 (W.s/°C)0.008
C3 (W.s/°C)0.01
C4 (W.s/°C)0.3
C5 (W.s/°C)0.6
C6 (W.s/°C)511
C7 (W.s/°C)0.005
C8 (W.s/°C)0.008
4.2 PQFN - 12x12 power lead-less thermal data
Figure 28. 12x12 Power lead-less package PC board
Note:Layout condition of R
area= 78 mm x 78 mm, PCB thickness=2mm, Cu thickness=70 µm (front and back side),
Copper areas: from minimum pad lay-out to 16 cm
and Zth measurements (PCB: Double layer, Thermal Vias, FR4
th
2
).
22/33 Doc ID 15702 Rev 1
Page 23
VND5004B-E, VND5004BSP30-EPackage and PC board thermal data
Figure 29. R
50
45
40
35
30
25
20
05101520
thj-amb
on)
vs PCB copper area in open box free air condition (one channel
Package and PC board thermal dataVND5004B-E, VND5004BSP30-E
Figure 31.
Equation 2
Z
THδ
where δ = t
Table 12.Thermal parameters for PQFN - 12x12 power lead-less
Thermal fitting model of a double channel HSD in PQFN - 12x12 power lead-
(b)
less
: pulse calculation formula
R
TH
P
δZ
/T
THtp
1 δ–()+⋅=
Area/island (cm2)Footprint 4816
R1 (°C/W)0.3
R2 (°C/W)0.15
R3 (°C/W)4.2
R4 (°C/W)9.69.49.29
R5 (°C/W)15.110.58.55.5
R6 (°C/W)16.71296
R7 (°C/W)0.3
R8 (°C/W)0.15
C1 (W.s/°C)0.021
C2 (W.s/°C)0.015
C3 (W.s/°C)0.2
C4 (W.s/°C)1.92.22.322.45
C5 (W.s/°C)2.457.313.720
C6 (W.s/°C)11.85222530
C7 (W.s/°C)0.021
C8 (W.s/°C)0.015
b. The fitting model is a simplified thermal tool and is valid for transient evolutions where the embedded
protections (power limitation or thermal cycling during thermal shutdown) are not triggered.
24/33 Doc ID 15702 Rev 1
Page 25
VND5004B-E, VND5004BSP30-EPackage and packing information
5 Package and packing information
5.1 ECOPACK® packages
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com
ECOPACK® is an ST trademark.
5.2 MultiPowerSO-30 mechanical data
Figure 32. MultiPowerSO-30 outline
.
Doc ID 15702 Rev 125/33
Page 26
Package and packing informationVND5004B-E, VND5004BSP30-E
Table 13.MultiPowerSO-30 mechanical data
Millimeters
Symbol
Min.Typ.Max.
A2.35
A21.852.25
A300.1
B0.420.58
C0.230.32
D17.117.217.3
E18.8519.15
E115.91616.1
“e”1
F614.3
F75.45
F80.73
L0.81.15
N10 Deg
S0 Deg7 Deg
26/33 Doc ID 15702 Rev 1
Page 27
VND5004B-E, VND5004BSP30-EPackage and packing information
5.3 PQFN - 12x12 power lead-less mechanical data
Figure 33. PQFN - 12x12 power lead-less outline
Doc ID 15702 Rev 127/33
Page 28
Package and packing informationVND5004B-E, VND5004BSP30-E
Table 14.PQFN - 12x12 power lead-less mechanical data
Symbol
Min.Typ.Max.
A2 2.2
A100.05
b0.350.47
C0.50
D11.9012.10
Dh14.654.95
Dh210.4510.65
Dh34.805
Dh44.805
E11.9012.10
Eh12.152.45
Millimeters
Eh25.155.45
Eh31.702
e10.90
e23.45
e31.10
f0.50
f10.60
L0.750.95
L11.651.90
L20.760.78
M11.1011.30
N11.1011.30
v0.1
w0.05
y0.05
y10.1
28/33 Doc ID 15702 Rev 1
Page 29
VND5004B-E, VND5004BSP30-EPackage and packing information
5.4 MultiPowerSO-30 packing information
The devices can be packed in tube or tape and reel shipments (see the Devices summary
on page 1 for packaging quantities).
Figure 34. MultiPowerSO-30 tube shipment (no suffix)
Tube dimension
Dimensionmm
A
C
B
Base Q.ty
Bulk Q.ty
Tube length (± 0.5)
A
B
C (± 0.13)
Figure 35. MultiPowerSO-30 tape and reel shipment (suffix “TR”)
Reel dimension
Dimensionmm
Base Q.ty1000
Bulk Q.ty1000
A (max)330
B (min)1.5
C (± 0.2)13
D (min)20.2
G (+ 2 / -0)32
N (min)100
T (max)38.4
29
435
532
3.82
23.6
0.8
Tape dimensions
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986
Package and packing informationVND5004B-E, VND5004BSP30-E
5.5 PQFN - 12x12 power lead-less packing information
The devices can be packed in tray or tape and reel shipments (see the Devices summary on
page 1 for packaging quantities).
Figure 36. PQFN - 12x12 power lead-less tray shipment (no suffix)
30/33 Doc ID 15702 Rev 1
Tray information
Parameter
Base Q.ty189
Bulk Q.ty945
Page 31
VND5004B-E, VND5004BSP30-EPackage and packing information
Figure 37. PQFN - 12x12 power lead-less tape and reel shipment (suffix “TR”)
Tape dimensions
Dimensionmm
A0 ± 0.112.30
B0 ± 0.112.30
K0 ± 0.12.15
F ± 0.111.50
E ± 0.11.75
W ± 0.324
P2 ± 0.12
P0 ± 0.14
P1 ± 0.116
T ± 0.050.30
D1.50
D1 (min)1.50
Reel dimensions
Dimensionmm
Base Q.ty1500
Bulk Q.ty1500
A (max)330
B (min)1.5
C (± 0.2)13
D (min)20.2
G (+ 2 / -0)32
N (min)100
T (max)38.4
Doc ID 15702 Rev 131/33
Page 32
Revision historyVND5004B-E, VND5004BSP30-E
6 Revision history
Table 15.Document revision history
DateRevisionChanges
13-May-20091Initial release.
32/33 Doc ID 15702 Rev 1
Page 33
VND5004B-E, VND5004BSP30-E
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