Datasheet VND10BSP13TR Datasheet (SGS Thomson Microelectronics)

VND10BSP

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

March 1998

BLOCK DIAG RAM

TYPE V

DSS

R

DS(on

)I

OUT

V

CC

VND10BSP 40 V 0.1 Ω 3.4 A 26 V

■ OUTPUT CURRENT (CONTINUOUS):

14A @ T

c

= 85oC PER CHANNEL

■ 5V LOGIC LEVEL COMPATIBLE INPUT

■ THERMAL SHUT-DOWN

■ UNDER VOLTAG E PROT E CT ION

■ OPEN DRAIN DIAGNOSTIC OUTPUT

■ INDUCTIVE LOAD FAST

DEMAGNETIZATION

■ VERY LOW STAND-BY POWER

DISSIPATION

DESCRIP TION

The VND10BSP is a monolithic device made
using SGS-THOMSON Vertical Intelligent Power
Technology, intended for driving resistive or
inductive loads with one side grounded. This
device has two channels, and a common
diagnostic. Built-in thermal shut-down protects
the chip from over temperature and short circuit.

The status output provides an indication of open
load in on state, open load in off state,
overtemperature conditions and stuc k-on to V

CC

.

1

10

PowerSO-10

1/9

ABSOLUTE MAXIMUM RATING

Symbol Parameter Value Unit

V

(BR)DSS

Drain-Source Breakdown Voltage 40 V

I

OUT

Output Current (cont.) at Tc = 85 oC14A

I

OUT

(RMS) RMS Output Current at Tc = 85 oC and f > 1Hz 14 A

I

R

Reverse Output Current at Tc = 85 oC-14A

I

IN

Input Current ±10 mA

-V

CC

Reverse Supply Voltage -4 V

I

STAT

Status Current ±10 mA

V

ESD

Electrostatic Discharge (1.5 kΩ, 100 pF) 2000 V

P

tot

Power Dissipation at Tc = 25 oC 75 W

T

j

Junction Operating Temperature -40 to 150

o

C

T

stg

Storage Temperature -55 to 150

o

C

CONNECTION DIAGRAMS

CURRENT AND VOLTAGE CONVENTI ONS

VND10BSP

2/9

THERMAL DATA

R

thj-case

R

thj-amb

Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient ($) Max

1.65
60

o

C/W

o

C/W

($) When mounted using minimum recommended pad size on FR-4 board

ELECTRICAL CHARACTERISTICS (8 < VCC < 16 V; -40 ≤ Tj ≤ 125 oC unless otherwise specified)
POWER

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

CC

Supply Voltage 6 13 26 V

In(*) Nominal Current Tc = 85 oC V

DS(on)

≤ 0.5 VCC = 13 V 3.4 5.2 A

R

on

On State Resistance I

OUT

= In VCC = 13 V Tj = 25 oC 0.065 0.1 Ω

I

S

Supply Current Off State Tj = 25 oC VCC = 13 V 35 100 µA

V

DS(MAX)

Maximum Voltage Drop I

OUT

= 7.5 A Tj = 85 oC VCC = 13 V 1.2 2 V

R

i

Output to GND internal
Impedance

Tj = 25 oC 5 10 20 KΩ

SWITCHING

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

(^) Turn-on Delay Time Of

Output Current

R

out

= 2.7 Ω 5 35 200 µs

t

r

(^) Rise Time Of Output

Current

R

out

= 2.7 Ω 28 110 360 µs

t

d(off)

(^) Turn-off Delay Time Of

Output Current

R

out

= 2.7 Ω 10 140 500 µs

t

f

(^) Fall Time Of Output

Current

R

out

= 2.7 Ω 28 75 360 µs

(di/dt)

on

Turn-on Current Slope R

out

= 2.7 Ω 0.003 0.1 A/µs

(di/dt)

off

Turn-off Current Slope R

out

= 2.7 Ω 0.005 0.1 A/µs

LOGIC INP UT

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

IL

Input Low Level
Voltage

1.5 V

V

IH

Input High Level
Voltage

3.5 (•)V

V

I(hyst.)

Input Hysteresis
Voltage

0.2 0.9 1.5 V

I

IN

Input Current VIN = 5 V Tj = 25 oC 30 100 µA

V

ICL

Input Clamp Voltage IIN = 10 mA

I

IN

= -10 mA

56

-0.7

7V

V

VND10BSP

3/9

ELECTRICAL CHARACTERISTICS (continued)
PROTECT IO N AND DIAG NO S TIC S

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

STAT

Status Voltage Output
Low

I

STAT

= 1.6 mA 0.4 V

V

USD

Under Voltage Shut
Down

3.5 4.5 6 V

V

SCL

Status Clamp Voltage I

STAT

= 10 mA

I

STAT

= -10 mA

56

-0.7

7V

V

T

TSD

Thermal Shut-down
Temperature

140 160 180

o

C

T

SD(hyst.)

Thermal Shut-down
Hysteresis

50

o

C

T

R

Reset Temperature 125

o

C

V

OL

Open Voltage Level Off-State (note 2) 2.5 4 5 V

I

OL

Open Load Current
Level

On-State 0.6 0.9 1.4 A

t

povl

Status Delay (note 3) 5 10 µs

t

pol

Status Delay (note 3) 50 500 2500 µs

(*) In= Nominal current according to ISO definition for high side automotive switch (see note 1)
NOTE = (^) See switching time waveform
NOTE = (•) The V

IH

is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor
calculated to not exceed 10 mA at the input pin.
NOTE = note 1: The Nominal Current is the current at T

c

= 85 oC for battery voltage of 13V which produces a voltage drop of 0.5 V

NOTE = note 2: I

OL(o f f)

= (VCC -VOL)/ROL

note 3:t

povl tpol

: ISO definition.

Note 2 Relevant Figure Note 3 Relevant Figure

VND10BSP

4/9

FUNCTIONAL DESCRI PTI ON

The device has a diagnostic output which
indicates open load in on-state, open load in
off-state, over temperature conditions and
stuck-on to V

CC

.

From the falling edge of the input signal, the
status output, initially low to signal a fault
condition (overtemperature or open load
on-state), will go back to a high state with a
different delay in case of overtemperature (tpovl)
and in case of open open load (tpol) respectively.
This feature allows to discriminate the nature of
the detected fault. To protect the device against
short circuit and over current condition, the
thermal protection turns the integrated Power
MOS off at a minimum junction temperature of
140

o

C. When this temperature returns to 125 oC
the switch is automatically turned on again. In
short circuit the protection reacts with virtually no
delay, the sensor being located inside the Power
MOS area. An internal function of the devices
ensures the fast demagnetization of inductive
loads with a typical voltage (V

demag

) of -18V. This
function allows to greatly reduces the power
dissipation according to the formula:

P

dem

= 0.5 • L

load

•(Ι

load

)2 • [( VCC+V

demag

)/V

demag

]

• f
where f = switching frequency and

V

demag

= demagnetization voltage.

The maximum inductance which causes the chip

temperature to reach the shut-down temperature
in a specified thermal environment is a function of
the load current for a fixed V

CC

, V

demag

and f
according to the above formula. In this device if
the GND pin is disconnected, with V

CC

not

exceeding 16V, it will switch off.

PROTECTING THE DEVICE AGAINST
REVERSE BATTERY

The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 1 (GND) and
ground, as shown in the typical application circuit
(fig.3).

The consequences of the voltage drop across
this diode are as follows:

If the input is pulled to power GND, a negative
voltage of -V

f

is seen by the device. (Vil, Vih
thresholds and Vstat are increased by Vf with
respect to power GND).

The undervoltage shutdown level is increa- sed
by Vf.

If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit in fig. 3), which becomes
the common signal GND for the whole control
board avoiding shift of V

ih

, Vil and V

stat

. This

solution allows the use of a standard diode.

Switching Ti me Waveforms

VND10BSP

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TRUTH TABLE

INPUT 1 INPUT 2 OUTPUT 1 OUTPUT 2 DIAGNOSTIC

Normal Operation L

H

L

H

L
H
H

L

L

H

L

H

L
H
H

L

H
H
H

H
Under-voltage X X L L H
Thermal Shutdown

Channel 1

HXLX L

Channel 2

XHXL L

Open Load

Channel 1

H

L

X

L

H

L

X

L

L

L(**)

Channel 2

X

L

H

L

X

L

H

L

L

L(**)

Output Shorted to V

CC

Channel 1

H

L

X

L

H
H

X

L

L
L

Channel 2

X

L

H

L

X

L

H
H

L
L

(**) with additional external resistor.

Figure 1: Waveforms

VND10BSP

6/9

Figure 3: Typical Application Circuit With Separ ate Signal Gr ound

Figure 2: Typical Application Circuit With A Schott ky Diode For Reverse Supply Prot ection

VND10BSP

7/9

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 3.35 3.65 0.132 0.144

A1 0.00 0.10 0.000 0.004

B 0.40 0.60 0.016 0.024

c 0.35 0.55 0.013 0.022

D 9.40 9.60 0.370 0.378

D1 7.40 7.60 0.291 0.300

E 9.30 9.50 0.366 0.374
E1 7.20 7.40 0.283 0.291
E2 7.20 7.60 0.283 0.300
E3 6.10 6.35 0.240 0.250
E4 5.90 6.10 0.232 0.240

e1.27 0.050

F 1.25 1.35 0.049 0.053

H 13.80 14.40 0.543 0.567

h0.50 0.002

L 1.20 1.80 0.047 0.071

q1.70 0.067

α0

o

8

o

DETAIL "A"

PLANE

SEATING

α

L

A1

F

A1

h

A

D

D1

= =
= =

= =

E4

0.10

A

E1E3

C

Q

A

= =

B

B

DETAIL "A"

SEATING

PLANE

= =

= =

E2

610

51

e

B

HE

M

0.25

= =

= =

0068039-C

Power SO-10 MECHANICAL DATA

VND10BSP

8/9

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without not ice. This publicat ion supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON M icroelectonics.

© 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved

SGS-THOMSON Microelectronics GROUP OF COMPANIES

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VND10BSP

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