Datasheet VND05BSP13TR Datasheet (SGS Thomson Microelectronics)

VND05BSP

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

April 2001

BLOCK DIAGRAM

TYPE V

DSS

R

DS(on

)I

OUT

V

CC

VND05BSP 40 V 0.2

Ω

1.6 A 26 V

■

OUTPUT CURRENT (CONTINUOUS) :
9A @ T

c

= 85oC PER CHANNEL

■

5V LOGIC LEVEL COMPATIBLE INPUT

■

THERMAL SHUT-DOWN

■

UNDER VOLTAGE PROTECTION

■

OPEN DRAIN DIAGNOSTIC OUTPUT

■

INDUCTIVE LOAD FAST
DEMAGNETIZATION

■

VERY LOW S T AN D-BY POWE R
DISSIPATION

DESCRIPTION

The VND05BSP is a monolithic device made
using STMicroelectronics VIPower Technology,
intended for driving resistive or inductive loads
with one side grounded. This device has two
channels, and a common diagnostic. Built-in
thermal shut-down protects the chip from over
temperature and short circuit.

The status output provides an indication of open
load in on state, open load in off state,
overtemperature conditions and stuck-on to V

CC

.

1

10

PowerSO-10

®

1/9

ABSOLUTE MAXIMUM RATING

Symbol Parameter Value Unit

V

(BR)DSS

Drain-Source Breakdown Voltage 40 V

I

OUT

Output Current (cont.) at Tc = 85 oC9A

I

OUT

(RMS) RMS Output Current at Tc = 85 oC and f > 1Hz 9 A

I

R

Reverse Output Current at Tc = 85 oC-9A

I

IN

Input Current

±

10 mA

-V

CC

Reverse Supply Voltage -4 V

I

STAT

Status Current

±

10 mA

V

ESD

Electrostatic Discharge (1.5 kΩ, 100 pF)

2000 V

P

tot

Power Dissipation at Tc = 25 oC 59 W

T

j

Junction Operating Temperature -40 to 150

o

C

T

stg

Storage Temperature -55 to 150

o

C

CONNECTION DIAGRAMS

CURRENT AND VOLTAGE CONVENTIONS

VND05BSP

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THERMAL D AT A

R

thj- case

R

thj-amb

Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient ($) Max

2.1
50

o

C/W

o

C/W

($) When mounted using minimum recommended pad size on FR-4 board

ELECTRICAL CHARACTERIST ICS

(8 < V

CC

< 16 V; -40 ≤ Tj ≤ 125 oC unless otherwise specified)

POWER

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

CC

Supply Voltage 6 13 26 V

In(*) Nominal Current

T

c

= 85 oC V

DS(on)

≤ 0.5 VCC = 13 V

1.6 2.6 A

R

on

On State Resistance I

OUT

= In VCC = 13 V Tj = 25 oC 0.13 0.2

Ω

I

S

Supply Current Off State Tj = 25 oC VCC = 13 V 35 100

µ

A

V

DS(MAX)

Maximum Voltage Drop I

OUT

= 7.5 A Tj = 85 oC VCC = 13 V 1.44 2.3 V

R

i

Output to GND internal
Impedance

Tj = 25 oC 5 10 20 K

Ω

SWITCHING

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

(^) Turn-on Delay Time Of

Output Current

R

out

= 5.4

Ω

5 25 200

µ

s

tr(^) Rise Time Of Output

Current

R

out

= 5.4

Ω

10 50 180

µ

s

t

d(off)

(^) Turn-off Delay Time Of

Output Current

R

out

= 5.4

Ω

10 75 250

µ

s

t

f

(^) Fall Time Of Output

Current

R

out

= 5.4

Ω

10 35 180

µ

s

(di/dt)onTurn-on Current Slope

R

out

= 5.4

Ω

0.003 0.1 A/µs

(di/dt)

off

Turn-off Current Slope

R

out

= 5.4

Ω

0.005 0.1 A/µs

LOGIC INPUT

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

IL

Input Low Level
Voltage

1.5 V

V

IH

Input High Level
Voltage

3.5 (•)V

V

I(hyst.)

Input Hysteresis
Voltage

0.2 0.9 1.5 V

I

IN

Input Current VIN = 5 V Tj = 25 oC 30 100

µ

A

V

ICL

Input Clamp Voltage IIN = 10 mA

I

IN

= -10 mA

56

-0.7

7V

V

VND05BSP

3/9

ELECTRICAL CHARACTERIST ICS

(continued)

PROTECTION AND DIAGNOSTICS

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

STAT

Status Voltage Output
Low

I

STAT

= 1.6 mA 0.4

V

V

USD

Under Voltage Shut
Down

3.5 4.5 6

V

V

SCL

Status Clamp Voltage I

STAT

= 10 mA

I

STAT

= -10 mA

56

-0.7

7

V
V

T

TSD

Thermal Shut-down
Temperature

140 160 180

o

C

T

SD(hyst.)

Thermal Shut-down
Hysteresis

50

o

C

T

R

Reset Temperature 125

o

C

V

OL

Open Voltage Level Off-State (note 2) 2.5 4

5V

I

OL

Open Load Current
Level

On-State 5

180 mA

t

povl

Status Delay (note 3) 5

10 µs

t

pol

Status Delay (note 3) 50 500

2500 µs

(*) In= Nominal current according to ISO definition for high side automotive switch (see note 1)
NOTE = (^) See switching time waveform
NOTE = (•) The V

IH

is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor
calculated to not exceed 10 mA at the input pin.
NOTE = note 1: The Nominal Current is the current at T

c

= 85 oC for battery voltage of 13V which produces a voltage drop of 0.5 V

NOTE = note 2: I

OL(off)

= (VCC -VOL)/ROL

note 3:t

povl tpol

: ISO definition.

Note 2 Relevant Figure Note 3 Relevant Figure

VND05BSP

4/9

FUNCTIONAL DESCRIP TION

The device has a diagnostic output which
indicates open load in on-state, open load in
off-state, over temperature conditions and
stuck-on to V

CC

.

From the falling edge of the input signal, the
status output, initially low to signal a fault
condition (overtemperature or open load
on-state), will go back to a high state with a
different delay in case of overtemperature (tpovl)
and in case of open open load (tpol) respectively.
This feature allows to discriminate the nature of
the detected fault. To protect the device against
short circuit and over current condition, the
thermal protection turns the integrated Power
MOS off at a minimum junction temperature of
140

o

C. When this temperature returns to 125 oC
the switch is automatically turned on again. In
short circuit the protection reacts with virtually no
delay, the sensor being located inside the Power
MOS area. An internal function of the devices
ensures the fast demagnetization of inductive
loads with a typical voltage (V

demag

) of -18V. This
function allows to greatly reduces the power
dissipation according to the formula:

P

dem

= 0.5 • L

load

•(Ι

load

)2 • [(VCC+V

demag

)/V

demag

]

•

f

where f = switching frequency and
V

demag

= demagnetization voltage.

The maximum inductance which causes the chip

temperature to reach the shut-down temperature
in a specified thermal environment is a function of
the load current for a fixed V

CC

, V

demag

and f
according to the above formula. In this device if
the GND pin is disconnected, with V

CC

not

exceeding 16V, it will switch off.

PROTECTING THE DEVICE AGAINST
REVERSE BATTERY

The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 1 (GND) and
ground, as shown in the typical application circuit
(fig.3).

The consequences of the voltage drop across this
diode are as follows:

If the input is pulled to power GND, a negative
voltage of -V

f

is seen by the device. (Vil, Vih
thresholds and Vstat are increased by Vf with
respect to power GND).

The undervoltage shutdown level is increa- sed
by Vf.

If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit in fig. 3), which becomes
the common signal GND for the whole control
board avoiding shift of V

ih

, Vil and V

stat

. This

solution allows the use of a standard diode.

Switching Time Waveforms

VND05BSP

5/9

TRUTH TABLE

INPUT 1 INPUT 2 OUTPUT 1 OUTPUT 2 DIAGNOSTIC

Normal Operation L

H

L

H

L
H
H

L

L

H

L

H

L
H
H

L

H
H
H

H
Under-voltage X X L L H
Thermal Shutdown

Channel 1

HXLX L

Channel 2

XHXL L

Open Load

Channel 1

H

L

X

L

H

L

X

L

L

L(**)

Channel 2

X

L

H

L

X

L

H

L

L

L(**)

Output Shorted to V

CC

Channel 1

H

L

X

L

H
H

X

L

L
L

Channel 2

X

L

H

L

X

L

H
H

L
L

(**) with additional external resistor.

Figure 1:

Waveforms

VND05BSP

6/9

Figure 3:

Typical Application Circuit With Separate Signal Ground

Figure 2:

Typical Application Circuit With A Schottky Diode For Reverse Supply Protection

VND05BSP

7/9

DIM.

mm. inch

MIN. TYP MAX. MIN. TYP. MAX.

A 3.35 3.65 0.132 0.144

A (*) 3.4 3.6 0.134 0.142

A1 0.00 0.10 0.000 0.004

B 0.40 0.60 0.016 0.024

B (*) 0.37 0.53 0.014 0.021

C 0.35 0.55 0.013 0.022

C (*) 0.23 0.32 0.009 0.0126

D 9.40 9.60 0.370 0.378

D1 7.40 7.60 0.291 0.300

E 9.30 9.50 0.366 0.374

E2 7.20 7.60 0.283 300

E2 (*) 7.30 7.50 0.287 0.295

E4 5.90 6.10 0.232 0.240

E4 (*) 5.90 6.30 0.232 0.248

e 1.27 0.050
F 1.25 1.35 0.049 0.053

F (*) 1.20 1.40 0.047 0.055

H 13.80 14.40 0.543 0.567

H (*) 13.85 14.35 0.545 0.565

h 0.50 0.002
L 1.20 1.80 0.047 0.070

L (*) 0.80 1.10 0.031 0.043

α

0º 8º 0º 8º

α

(*) 2º 8º 2º 8º

PowerSO-10™ MECHANICAL DATA

(*) Muar only POA P013P

DETAIL "A"

PLANE

SEATING

α

L

A1

F

A1

h

A

D

D1

= =
= =

E4

0.10 A

E

C

A

B

B

DETAIL "A"

SEATING

PLANE

E2

10

1

eB

HE

0.25

P095A

VND05BSP

8/9

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VND05BSP

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