Datasheet VND05BSP13TR Datasheet (SGS Thomson Microelectronics)

Page 1
VND05BSP
ISO HIGH SIDE SMART POWER SOLID STATE RELAY
April 2001
BLOCK DIAGRAM
TYPE V
DSS
R
)I
OUT
V
CC
VND05BSP 40 V 0.2
1.6 A 26 V
OUTPUT CURRENT (CONTINUOUS) : 9A @ T
c
= 85oC PER CHANNEL
5V LOGIC LEVEL COMPATIBLE INPUT
THERMAL SHUT-DOWN
UNDER VOLTAGE PROTECTION
OPEN DRAIN DIAGNOSTIC OUTPUT
INDUCTIVE LOAD FAST DEMAGNETIZATION
VERY LOW S T AN D-BY POWE R DISSIPATION
DESCRIPTION
The VND05BSP is a monolithic device made using STMicroelectronics VIPower Technology, intended for driving resistive or inductive loads with one side grounded. This device has two channels, and a common diagnostic. Built-in thermal shut-down protects the chip from over temperature and short circuit.
The status output provides an indication of open load in on state, open load in off state, overtemperature conditions and stuck-on to V
CC
.
1
10
PowerSO-10
®
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ABSOLUTE MAXIMUM RATING
Symbol Parameter Value Unit
V
(BR)DSS
Drain-Source Breakdown Voltage 40 V
I
OUT
Output Current (cont.) at Tc = 85 oC9A
I
OUT
(RMS) RMS Output Current at Tc = 85 oC and f > 1Hz 9 A
I
R
Reverse Output Current at Tc = 85 oC-9A
I
IN
Input Current
±
10 mA
-V
CC
Reverse Supply Voltage -4 V
I
STAT
Status Current
±
10 mA
V
ESD
Electrostatic Discharge (1.5 kΩ, 100 pF)
2000 V
P
tot
Power Dissipation at Tc = 25 oC 59 W
T
j
Junction Operating Temperature -40 to 150
o
C
T
stg
Storage Temperature -55 to 150
o
C
CONNECTION DIAGRAMS
CURRENT AND VOLTAGE CONVENTIONS
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THERMAL D AT A
R
thj- case
R
thj-amb
Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient ($) Max
2.1 50
o
C/W
o
C/W
($) When mounted using minimum recommended pad size on FR-4 board
ELECTRICAL CHARACTERIST ICS
(8 < V
CC
< 16 V; -40 ≤ Tj ≤ 125 oC unless otherwise specified)
POWER
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
CC
Supply Voltage 6 13 26 V
In(*) Nominal Current
T
c
= 85 oC V
DS(on)
≤ 0.5 VCC = 13 V
1.6 2.6 A
R
on
On State Resistance I
OUT
= In VCC = 13 V Tj = 25 oC 0.13 0.2
I
S
Supply Current Off State Tj = 25 oC VCC = 13 V 35 100
µ
A
V
DS(MAX)
Maximum Voltage Drop I
OUT
= 7.5 A Tj = 85 oC VCC = 13 V 1.44 2.3 V
R
i
Output to GND internal Impedance
Tj = 25 oC 5 10 20 K
SWITCHING
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
(^) Turn-on Delay Time Of
Output Current
R
out
= 5.4
5 25 200
µ
s
tr(^) Rise Time Of Output
Current
R
out
= 5.4
10 50 180
µ
s
t
d(off)
(^) Turn-off Delay Time Of
Output Current
R
out
= 5.4
10 75 250
µ
s
t
f
(^) Fall Time Of Output
Current
R
out
= 5.4
10 35 180
µ
s
(di/dt)onTurn-on Current Slope
R
out
= 5.4
0.003 0.1 A/µs
(di/dt)
off
Turn-off Current Slope
R
out
= 5.4
0.005 0.1 A/µs
LOGIC INPUT
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
IL
Input Low Level Voltage
1.5 V
V
IH
Input High Level Voltage
3.5 (•)V
V
I(hyst.)
Input Hysteresis Voltage
0.2 0.9 1.5 V
I
IN
Input Current VIN = 5 V Tj = 25 oC 30 100
µ
A
V
ICL
Input Clamp Voltage IIN = 10 mA
I
IN
= -10 mA
56
-0.7
7V
V
VND05BSP
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ELECTRICAL CHARACTERIST ICS
(continued)
PROTECTION AND DIAGNOSTICS
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
STAT
Status Voltage Output Low
I
STAT
= 1.6 mA 0.4
V
V
USD
Under Voltage Shut Down
3.5 4.5 6
V
V
SCL
Status Clamp Voltage I
STAT
= 10 mA
I
STAT
= -10 mA
56
-0.7
7
V V
T
TSD
Thermal Shut-down Temperature
140 160 180
o
C
T
SD(hyst.)
Thermal Shut-down Hysteresis
50
o
C
T
R
Reset Temperature 125
o
C
V
OL
Open Voltage Level Off-State (note 2) 2.5 4
5V
I
OL
Open Load Current Level
On-State 5
180 mA
t
povl
Status Delay (note 3) 5
10 µs
t
pol
Status Delay (note 3) 50 500
2500 µs
(*) In= Nominal current according to ISO definition for high side automotive switch (see note 1) NOTE = (^) See switching time waveform NOTE = (•) The V
IH
is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor calculated to not exceed 10 mA at the input pin. NOTE = note 1: The Nominal Current is the current at T
c
= 85 oC for battery voltage of 13V which produces a voltage drop of 0.5 V
NOTE = note 2: I
OL(off)
= (VCC -VOL)/ROL
note 3:t
povl tpol
: ISO definition.
Note 2 Relevant Figure Note 3 Relevant Figure
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FUNCTIONAL DESCRIP TION
The device has a diagnostic output which indicates open load in on-state, open load in off-state, over temperature conditions and stuck-on to V
CC
.
From the falling edge of the input signal, the status output, initially low to signal a fault condition (overtemperature or open load on-state), will go back to a high state with a different delay in case of overtemperature (tpovl) and in case of open open load (tpol) respectively. This feature allows to discriminate the nature of the detected fault. To protect the device against short circuit and over current condition, the thermal protection turns the integrated Power MOS off at a minimum junction temperature of 140
o
C. When this temperature returns to 125 oC the switch is automatically turned on again. In short circuit the protection reacts with virtually no delay, the sensor being located inside the Power MOS area. An internal function of the devices ensures the fast demagnetization of inductive loads with a typical voltage (V
demag
) of -18V. This function allows to greatly reduces the power dissipation according to the formula:
P
dem
= 0.5 • L
load
•(Ι
load
)2 • [(VCC+V
demag
)/V
demag
]
f
where f = switching frequency and V
demag
= demagnetization voltage.
The maximum inductance which causes the chip
temperature to reach the shut-down temperature in a specified thermal environment is a function of the load current for a fixed V
CC
, V
demag
and f according to the above formula. In this device if the GND pin is disconnected, with V
CC
not
exceeding 16V, it will switch off.
PROTECTING THE DEVICE AGAINST REVERSE BATTERY
The simplest way to protect the device against a continuous reverse battery voltage (-26V) is to insert a Schottky diode between pin 1 (GND) and ground, as shown in the typical application circuit (fig.3).
The consequences of the voltage drop across this diode are as follows:
If the input is pulled to power GND, a negative voltage of -V
f
is seen by the device. (Vil, Vih thresholds and Vstat are increased by Vf with respect to power GND).
The undervoltage shutdown level is increa- sed by Vf.
If there is no need for the control unit to handle external analog signals referred to the power GND, the best approach is to connect the reference potential of the control unit to node [1] (see application circuit in fig. 3), which becomes the common signal GND for the whole control board avoiding shift of V
ih
, Vil and V
stat
. This
solution allows the use of a standard diode.
Switching Time Waveforms
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TRUTH TABLE
INPUT 1 INPUT 2 OUTPUT 1 OUTPUT 2 DIAGNOSTIC
Normal Operation L
H
L
H
L H H
L
L
H
L
H
L H H
L
H H H
H Under-voltage X X L L H Thermal Shutdown
Channel 1
HXLX L
Channel 2
XHXL L
Open Load
Channel 1
H
L
X
L
H
L
X
L
L
L(**)
Channel 2
X
L
H
L
X
L
H
L
L
L(**)
Output Shorted to V
CC
Channel 1
H
L
X
L
H H
X
L
L L
Channel 2
X
L
H
L
X
L
H H
L L
(**) with additional external resistor.
Figure 1:
Waveforms
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Figure 3:
Typical Application Circuit With Separate Signal Ground
Figure 2:
Typical Application Circuit With A Schottky Diode For Reverse Supply Protection
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DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 3.35 3.65 0.132 0.144
A (*) 3.4 3.6 0.134 0.142
A1 0.00 0.10 0.000 0.004
B 0.40 0.60 0.016 0.024
B (*) 0.37 0.53 0.014 0.021
C 0.35 0.55 0.013 0.022
C (*) 0.23 0.32 0.009 0.0126
D 9.40 9.60 0.370 0.378
D1 7.40 7.60 0.291 0.300
E 9.30 9.50 0.366 0.374
E2 7.20 7.60 0.283 300
E2 (*) 7.30 7.50 0.287 0.295
E4 5.90 6.10 0.232 0.240
E4 (*) 5.90 6.30 0.232 0.248
e 1.27 0.050 F 1.25 1.35 0.049 0.053
F (*) 1.20 1.40 0.047 0.055
H 13.80 14.40 0.543 0.567
H (*) 13.85 14.35 0.545 0.565
h 0.50 0.002 L 1.20 1.80 0.047 0.070
L (*) 0.80 1.10 0.031 0.043
α
α
(*)
PowerSO-10™ MECHANICAL DATA
(*) Muar only POA P013P
DETAIL "A"
PLANE
SEATING
α
L
A1
F
A1
h
A
D
D1
= = = =
E4
0.10 A
E
C
A
B
B
DETAIL "A"
SEATING
PLANE
E2
10
1
eB
HE
0.25
P095A
VND05BSP
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