Datasheet VND05B Datasheet (SGS Thomson Microelectronics)

VND05B



/ VND05B (011Y) / VND05B (012Y)

HIGH SIDE SMART POWER SOLID STATE RELAY

TYPE V

VND05B
VND05B (011Y)
VND05B (012Y)

■ OUTPUT CURRENT (CONTINUOUS): 9A AT

DSSRDS(on)In

40V 200mΩ 1.6A 26 V

Tc=85°C PER CHANNEL

■ 5V LOGIC LEVEL COMPATIBLE INPUT

■ THERMAL SHUT-DOWN

■ UNDERVOLTAGE PROTECTION

■ OPEN DRAIN DIAGNOSTIC OUTPUT

■ INDUCTIVE LOAD FAST DEMAGNETIZATION

■ VERY LOW STAND-BYPOWER DISSIPATION

DESCRIPTION

The VND05B, VND05B (011Y), VND05B (012Y) is
a monolithic device designed in
STMicroelectronics VIPower technology, intended
for driving resistive or inductive loads with one
side connected to ground. This device has two
channels, and a common diagnostic. Built-in
thermal shutdown protects the chip from
overtemperature and short circuit. The status
output provides an indication of open load in on
state, open load in off state, overtemperature
conditions and stuck-on to VCC.

(*) V

CC

DOUBLE CHANNEL

HEPTAWATT

(vertical) (horizontal)

HEPTAWATT

ORDER CODES

HEPTAWATT vertical
HEPTAWATT horizontal
HEPTAWATT in-line

VND05B
VND05B (011Y)
VND05B (012Y)

HEPTAWATT

(in-line)

BLOCK DIAGRAM

(*) In= Nominal current according to ISO definition for high side automotive switch (see note 1)

November 1999 1/11

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VND05B / VND05B (011Y) / VND05B (012Y)

ABSOLUTE MAXIMUM RATING

Symbol Parameter Value Unit

V

(BR)DSS

I

OUT

I

(RMS) RMS Output current at Tc=85°C and f > 1Hz 9 A

OUT

I

R

I

IN

-V
I

STAT

V

ESD

P

TOT

T

T

STG

CONNECTION DIAGRAM TOP VIEW

Drain-Source breakdown voltage 40 V
Output current (continuous) at Tc=85°C9A

Reverse output current at Tc=85°C-9A
Input current +/- 10 mA
Reverse supply voltage -4 V

CC

Status current +/- 10 mA
Electrostatic discharge (R=1.5kΩ, C=100pF) 2000 V
Power dissipation at Tc=25°C59W
Junction operating temperature -40 to 150 °C

j

Storage temperature -55 to 150 °C

CURRENT AND VOLTAGECONVENTIONS

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VND05B / VND05B (011Y) / VND05B (012Y)

THERMAL DATA

Symbol Parameter Value Unit

R

thj-case

R

thj-amb

Thermal resistance junction-case (MAX) 2.1 °C/W
Thermal resistance junction-ambient (MAX) 60 °C/W

ELECTRICAL CHARACTERISTICS (8V<VCC<16V; -40°C≤T

≤125°C; unless otherwise specified)

j

POWER

Symbol Parameter Test Conditions Min Typ Max Unit

V

CC

I

n

R

ON

I

V

DS(MAX)

R

S

Supply voltage 6 13 26 V

(*) Nominal current Tc=85°C; V

On state resistance I

OUT=In;VCC

≤0.5V; VCC=13V 1.6 2.6 A

DS(on)

=13V; Tj=25°C 0.13 0.2 Ω
Supply current Off state; Tj=25°C; VCC=13V 35 100 µA
Maximum voltage Drop I
Output to GND internal

i

impedance

=7.5A; Tj=85°C; VCC=13V 1.44 2.3 V

OUT

=25°C 5 10 20 KΩ

T

j

SWITCHING

Symbol Parameter Test Conditions Min Typ Max Unit

t

d(on)

t

(^) Rise time of output current R

r

t

d(off)

t

(^) Fall time of output current R

f

(di/dt)
(di/dt)

Turn-on delay time of

(^)

output current

Turn-off delay time of

(^)

output current

Turn-on current slope R

on

Turn-off current slope R

off

R

=5.4Ω 5 25 200 µs

OUT

=5.4Ω 10 50 180 µs

OUT

R

=5.4Ω 10 75 250 µs

OUT

=5.4Ω 10 35 180 µs

OUT

=5.4Ω 0.003 0.1 A/µs

OUT

=5.4Ω 0.005 0.1 A/µs

OUT

LOGIC INPUT

Symbol Parameter Test Conditions Min Typ Max Unit

V
V

V

I(hyst)

I

IN

V

ICL

Input low level voltage 1.5 V

IL

Input high level voltage 3.5 (•)V

IH

Input hysteresis voltage 0.2 0.9 1.5 V
Input current VIN=5V; Tj=25°C30100µA

Input clamp voltage

=10mA

I

IN

=-10mA

I

IN

56

-0.7

7V

V

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VND05B / VND05B (011Y) / VND05B (012Y)

ELECTRICAL CHARACTERISTICS (continued)

PROTECTIONS AND DIAGNOSTICS

Symbol Parameter Test Conditions Min Typ Max Unit

V

STAT

V

USD

V

SCL

T

TSD

T

TSD(hyst)

T

V

OL

I

OL

t

povl

t

pol

(*) In=Nominal current according to ISO definition for high side automotive switch (see note 1)
(^) Seeswitching time waveform
(•)TheV

exceed 10 mA at the input pin.
Note 1: The Nominal Current is the current at T
Note 2: I
Note 3: t

Low output voltage status I

=1.6mA 0.4 V

STAT

Undervoltage shut-down 3.5 4.5 6 V
Status clamp voltage I

Thermal shut-down
temperature

STAT

I

STAT

= 10mA
= -10mA

56

-0.7

140 160 180 °C

Thermal shutdown
hysteresis temperature

Reset temperature 125 °C

R

7V

50 °C

Open voltage level Off state (note 2) 2.5 4 5 V
Open load current level On state 5 180 mA
Overtemperature Status

delay

(note 3) 5 10 µs

Open Load Status delay (note 3) 50 500 2500 µs

is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor calculated to not

IH

=85°C for battery voltage of 13V which produces a voltage drop of 0.5V

c
OL(off)
povltpol

=(VCC-VOL)/R

: ISO definition

OL

V

Note 2 Relevant Figure Note 3 Relevant Figure

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Switching Time Waveforms

VND05B / VND05B (011Y) / VND05B (012Y)

FUNCTIONAL DESCRIPTION

The device has a common diagnostic output for
both channels which indicates open load in on­state, open load in off-state, overtemperature
conditions and stuck-on to VCC.

From the falling edgeof the input signal, the status
output, initially low to signal a fault condition
(overtemperature or open load on-state), will go
back to ahighstate with a different delay in case of
overtemperature (t
(t

) respectively. This feature allows to

pol

) and in case of open load

povl

discriminate the nature of the detected fault. To
protect the device against short-circuit and
overcurrent condition, the thermal protection turns
the integrated PowerMOS off at a minimum
junction temperature of 140°C. When this
temperature returns to 125°C the switch is
automatically turned in again. In short-circuit the
protection reactswith virtually no delay, the sensor
(one for each channel) being located inside each
of the two PowerMOS areas. This positioning
allows the device to operate with one channel in
automatic thermal cycling and the other one on a
normal load. An internal function of the devices
ensures the fast demagnetization of inductive
loads with a typical voltage (V

) of -18V. This

demag

function allows to greatly reduce the power
dissipation according to the formula:

P

dem

= 0.5•L

load

•(I

load

)

2

•[(V

CC+Vdemag

)/V

demag

]•f
where f= switching frequency and
V

= demagnetization voltage.

demag

The maximum inductance which causes the chip
temperature to reach the shutdown temperature in
a specified thermal environment is a function of
the load current for a fixed VCC,V

demag

and f
according to the above formula. In this device if the
GND pin is disconnected, with VCCnot exceeding
16V, both channels will switch off.

PROTECTING THE DEVICE AGAINST
REVERSE BATTERY

The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 2 (GND) and
ground, as shown in the typical application circuit
(fig. 2).

The consequences of the voltage drop across this
diode are as follows:

- If the input is pulled to power GND, a negative

voltage of -Vfis seen by the device. (Vil,V
thresholds and V

are increased by Vfwith

STAT

respect to power GND).

- The undervoltage shutdown level isincreased by

Vf.

If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to the device
ground (see application circuit in fig. 3), which
becomes the common signal GND for the whole
control board avoiding shift on Vil,Vihand V

STAT

This solution allows the use of a standard diode.

ih

.

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VND05B / VND05B (011Y) / VND05B (012Y)

THRUTH TABLE

INPUT 1 INPUT 2 OUTPUT 1 OUTPUT 2 DIAGNOSTIC

L

Normal operation

Undervoltage X X L L H
Thermal shutdown

Openload

Output shorted to V

Channel 1 H X L X L
Channel 2 X H X L L

Channel 1

Channel 2

Channel 1

CC

Channel 2

H

L

H

H

L

X

L

H

L

X

L

Figure: 1: Waveforms

L
H
H

L

X

L
H

L
X

L
H

L

L

H

L

H

H

L

X

L

H
H

X

L

L
H
H
L

X
L

H
L

X
L

H
H

H
H
H
H

L
L

L
L

L
L

L
L

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VND05B / VND05B (011Y) / VND05B (012Y)

Figure 2: Typical application circuit with a Schottky diode for reverse supply protection

Figure 3: Typical application circuit with separate signal ground

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VND05B / VND05B (011Y) / VND05B (012Y)

HEPTAWATT (horizontal) MECHANICAL DATA

DIM.

A 4.8 0.189
C 1.37 0.054
D 2.4 2.8 0.094 0.110

D1 1.2 1.35 0.047 0.053

E 0.35 0.55 0.014 0.022

F 0.6 0.8 0.024 0.031

F1 0.9 0.035

G 2.41 2.54 2.67 0.095 0.100 0.105
G1 4.91 5.08 5.21 0.193 0.200 0.205
G2 7.49 7.62 7.8 0.295 0.300 0.307
H2 10.4 0.409
H3 10.05 10.4 0.396 0.409

L 14.2 0.559
L1 4.4 0.173
L2 15.8 0.622
L3 5.1 0.201
L5 2.6 3 0.102 0.118
L6 15.1 15.8 0.594 0.622
L7 6 6.6 0.236 0.260
L9 4.44 0.175

Dia 3.65 3.85 0.144 0.152

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

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VND05B / VND05B (011Y) / VND05B (012Y)

HEPTAWATT (vertical) MECHANICAL DATA

DIM.

A 4.8 0.189
C 1.37 0.054
D 2.4 2.8 0.094 0.110

D1 1.2 1.35 0.047 0.053

E 0.35 0.55 0.014 0.022

F 0.6 0.8 0.024 0.031

F1 0.9 0.035

G 2.41 2.54 2.67 0.095 0.100 0.105
G1 4.91 5.08 5.21 0.193 0.200 0.205
G2 7.49 7.62 7.8 0.295 0.300 0.307
H2 10.4 0.409
H3 10.05 10.4 0.396 0.409

L 16.97 0.668
L1 14.92 0.587
L2 21.54 0.848
L3 22.62 0.891
L5 2.6 3 0.102 0.118
L6 15.1 15.8 0.594 0.622
L7 6 6.6 0.236 0.260

M 2.8 0.110

M1 5.08 0.200

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

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VND05B / VND05B (011Y) / VND05B (012Y)

HEPTAWATT (in-line) MECHANICAL DATA

DIM.

A 4.8 0.189
C 1.37 0.054
D 2.4 2.8

D1 1.2 1.35 0.047 0.053

E 0.35 0.55 0.014 0.022

F 0.6 0.8 0.024 0.031

F1 0.9 0.035

G 2.41 2.54 2.67 0.095 0.100 0.105
G1 4.91 5.08 5.21 0.193 0.200 0.205
G2 7.49 7.62 7.8 0.295 0.300 0.307
H2 10.4 0.409
H3 10.05 10.4 0.396 0.409

L2 22.4 22.9 0.882 0.902
L3 25.4 26 1.000 1.024
L5 2.6 3 0.102 0.118
L6 15.1 15.8 0.594 0.622
L7 6 6.6 0.236 0.260

Dia. 3.65 3.85 0.144 0.152

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

0.094

0.110

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VND05B / VND05B (011Y) / VND05B (012Y)

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of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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