The VN920SP-E is a monolithic device designed
in STMicroelectronics™ VIPower™ M0-3
technology. The VN920SP-E is intended for
driving any type of load with one side connected
to ground. The active V
protects the device against low energy spikes
(see ISO7637 transient compatibility table).
Active current limitation combined with thermal
shutdown and automatic restart protects the
device against overload.
The device integrates an analog current sense
output which delivers a current proportional to the
load current. The device automatically turns-off in
the case where the ground pin becomes
disconnected.
Table 2.Suggested connections for unused and not connected pins
Connection / pinCurrent senseN.C.OutputInput
FloatingXXX
To ground
Through 1 KΩ
resistor
X
Through 10KΩ
Doc ID 10896 Rev 35/27
resistor
Page 6
Electrical specificationsVN920SP-E
2 Electrical specifications
Figure 3.Current and voltage conventions
I
S
V
CC
I
OUT
I
SENSE
V
SENSE
GND
OUTPUT
I
GND
I
IN
V
IN
INPUT
CURRENT SENSE
V
F
V
OUT
V
CC
2.1 Absolute maximum ratings
Stressing the device above the rating listed in Ta bl e 3 may cause permanent damage to the
device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Refer also to the STMicroelectronics sure program and other relevant quality
document.
Table 3.Absolute maximum ratings
SymbolParameterValueUnit
V
- V
- I
GND
I
OUT
- I
OUT
I
V
CSENSE
V
ESD
CC
IN
DC supply voltage41V
Reverse DC supply voltage-0.3V
CC
DC reverse ground pin current-200mA
DC output currentInternally limitedA
Reverse DC output current -40A
DC input current+/-10mA
Current sense maximum voltage
Electrostatic discharge
(Human Body Model: R = 1.5 KΩ; C = 100 pF)
– INPUT
– CURRENT SENSE
–OUTPUT
–V
1. When mounted on FR4 printed circuit board with 0.5 cm2 of Cu (at least 35 µm thick).
2. When mounted on FR4 printed circuit board with 6 cm2 of Cu (at least 35 µm thick).
Thermal resistance junction-case (max)1.3°C/W
Thermal resistance junction-ambient (max)51.3
(1)
37
(2)
°C/W
°C/W
Doc ID 10896 Rev 37/27
Page 8
Electrical specificationsVN920SP-E
2.3 Electrical characteristics
Values specified in this section are for 8 V < V
< 36 V; -40 °C < Tj < 150 °C, unless
CC
otherwise stated.
Tabl e 5.Pow er
SymbolParameterTest conditionsMin.Typ.Max. Unit
V
V
V
R
V
CLAMP
I
L(off1)
I
L(off2)
I
L(off3)
Operating supply voltage5.51336V
CC
Undervoltage shutdown345.5V
USD
Overvoltage shutdown36V
OV
I
= 10 A; Tj = 25 °C;
OUT
On-state resistance
ON
Clamp voltageI
Supply current
I
S
Off-state output currentV
Off-state output currentV
Off-state output current
I
= 10 A;
OUT
= 3 A; V
I
OUT
= 20 mA
CC
Off-state; V
= V
V
IN
OUT
Off-state; V
= V
V
IN
OUT
On-state; V
= 0 A; R
I
OUT
= V
IN
OUT
= 0 V; V
IN
V
= V
IN
OUT
Tj = 125 °C
= 6 V
CC
(1)
CC
= 13 V;
414855V
= 0 V
= 13 V;
CC
= 0 V; Tj = 25 °C
= 13 V; V
CC
SENSE
= 5 V;
IN
= 3.9 kΩ
= 0 V050µA
= 3.5 V-750µA
OUT
= 0 V; V
CC
= 13 V;
15
30
50
101025
20
5
5µA
mΩ
mΩ
mΩ
µA
µA
mA
V
I
L(off4)
1. V
Table 6.Switching (VCC=13V)
Off-state output current
and VOV are correlated. Typical difference is 5 V.
CLAMP
IN
Tj = 25 °C
= V
OUT
= 0 V; V
SymbolParameterTest conditionsMin.Typ.Max. Unit
dV
dV
t
d(on)
t
d(off)
OUT
OUT
Turn-on delay time RL = 1.3 Ω (see Figure 4)50µs
Turn-off delay time RL = 1.3 Ω (see Figure 4)50µs
/dt
Turn-on voltage slope RL = 1.3 Ω (see Figure 4)See Figure 15V/µs
(on)
/dt
Turn-off voltage slope RL = 1.3 Ω (see Figure 4)See Figure 16V/µs
(off)
8/27Doc ID 10896 Rev 3
CC
= 13 V;
3µA
Page 9
VN920SP-EElectrical specifications
Table 7.Logic inputs
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
V
V
I(hyst)
V
Tabl e 8.VCC output diode
Input low level voltage1.25V
IL
Low level input currentV
I
IL
Input high level voltage3.25V
IH
I
High level input currentV
IH
= 1.25 V1µA
IN
= 3.25 V10µA
IN
Input hysteresis voltage0.5V
Input clamp voltage
ICL
I
= 1 mA
IN
= - 1 mA
I
IN
66.8
-0.7
8V
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
F
Table 9.Protections
Forward on voltage- I
(1)
= 5.3 A; Tj = 150 °C--0.6V
OUT
SymbolParameterTest conditionsMin.Typ.Max.Unit
T
TSD
T
T
hyst
I
lim
V
demag
V
1. To ensure long term reliability under heavy over-load or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device operates under
abnormal conditions this software must limit the duration and number of activation cycles.
Shutdown temperature150175200°C
Reset temperature135°C
R
Thermal hysteresis715°C
DC short circuit current
Turn-off output clamp
voltage
Output voltage drop
ON
limitation
V
= 13 V
CC
5V < V
I
OUT
V
IN
CC
= 2 A;
= 0 V;
< 36 V
L = 6 mH
= 1 A;
I
OUT
= -40 °C...150 °C
T
j
304575
V
CC
- 41V
CC
- 48 V
50mV
75
- 55V
CC
V
A
A
Doc ID 10896 Rev 39/27
Page 10
Electrical specificationsVN920SP-E
Table 10.Current sense
(1)
SymbolParameterTest conditionsMin.Typ.Max.Unit
K
1
dK
1/K1
K
2
dK
2/K2
K
3
dK
3/K3
I
SENSE0
V
SENSE
I
OUT/ISENSE
Current sense ratio drift
I
OUT/ISENSE
Current sense ratio drift
I
OUT/ISENSE
Current sense ratio drift
Analog sense leakage
current
Max analog sense
output voltage
= 1 A; V
OUT
Tj = -40 °C...150 °C
I
= 1 A; V
OUT
Tj= - 40 °C...150 °C
I
= 10 A; V
OUT
Tj = - 40 °C
= 25 °C...150 °C
T
j
I
= 10 A; V
OUT
= -40 °C...150 °C
T
j
I
= 30 A; V
OUT
= -40 °C
T
j
= 25 °C...150 °C
T
j
I
= 30 A; V
OUT
= -40 °C...150 °C
T
j
= 6...16 V; I
V
CC
V
T
V
R
V
R
= 0 V;
SENSE
= -40 °C...150 °C010µA
j
= 5.5 V; I
CC
= 10 kΩ
SENSE
> 8 V, I
CC
SENSE
OUT
= 10 kΩ
SENSE
SENSE
SENSE
SENSE
SENSE
SENSE
OUT
OUT
= 10 A;
= 0.5 V;
= 0.5 V;
= 4 V;
= 4 V;
= 4 V;
= 4 V;
= 0 A;
= 5 A;
330044006000
-10+10%
4200
4400
4900
4900
6000
5750
-8+8%
4200
4400
4900
4900
5500
5250
-6+6%
2
4
I
Sense voltage in
V
SENSEH
overtemperature
V
CC
= 13 V; R
= 3.9 kΩ5.5V
SENSE
condition
Analog sense output
R
VSENSEH
impedance in
overtemperature
= 13 V; Tj > T
V
CC
output open
TSD
;
400Ω
condition
V
V
t
DSENSE
1. 9 V ≤ V
2. Current sense signal delay after positive input slope.
Current sense delay
response
≤ 16 V.
CC
To 90 % I
SENSE
10/27Doc ID 10896 Rev 3
(2)
500µs
Page 11
VN920SP-EElectrical specifications
Table 11.Truth table
ConditionsInputOutputSense
Normal operation
Overtemperature
Undervoltage
Overvoltage
Short circuit to GND
Short circuit to V
CC
L
H
L
H
L
H
L
H
L
H
H
L
H
L
H
Nominal
L
L
V
SENSEH
L
L
L
L
L
L
L
(T
j<TTSD
(T
j>TTSD
) 0
) V
H
H
< Nominal
Negative output voltage clampLL0
0
0
0
0
0
0
0
SENSEH
0
Doc ID 10896 Rev 311/27
Page 12
Electrical specificationsVN920SP-E
Table 12.Electrical transient requirements on V
ISO T/R
7637/1
test pulse
IIIIIIIVDelays and impedance
1- 25V- 50V - 75 V
2+ 25V
3a- 25 V- 50 V
+ 50 V+ 75V+ 100V
3b+ 25 V+ 50 V+ 75 V+ 100 V0.1 µs, 50 Ω
4- 4V- 5V - 6 V- 7 V100 ms, 0.01 Ω
5+ 26.5 V+ 46.5 V+ 66.5 V+ 86.5 V
Table 13.Electrical transient requirements on VCC pin (part 2)
- 100 V
Test levels
pin (part 1)
CC
- 100 V2 ms, 10 Ω
0.2 ms, 10 Ω
- 150 V0.1 µs, 50 Ω
400 ms, 2 Ω
ISO T/R
Test levels results
7637/1
test pulse
IIIIIIIV
1 CCCC
2 CCCC
3a CCCC
3b CCCC
4 CCCC
5CEEE
Table 14.Electrical transient requirements on VCC pin (part 3)
ClassContents
C
All functions of the device are performed as designed after exposure to
disturbance.
One or more functions of the device is not performed as designed after
E
exposure to disturbance and cannot be returned to proper operation without
replacing the device.
Figure 7.Off-state output currentFigure 8.High level input current
Figure 9.Input clamp voltageFigure 10.On-state resistance vs V
Figure 11. On-state resistance vs T
IL(off1) (uA)
9
8
7
6
5
4
3
2
1
0
-50 -250255075 100 125 150 175
Tc (°C)
Vicl (V)
8
7.8
7.6
7.4
7.2
7
6.8
6.6
6.4
6.2
6
Iin=1mA
-50 -250255075 100 125 150 175
Tc (°C)
case
Ron (mOhm)
30
27.5
25
22.5
20
17.5
15
12.5
10
7.5
5
Iout=10A
Vcc=8V; 36V
-250255075100 125150175
Tc (ºC)
Iih (uA)
5
4.5
3.5
2.5
1.5
0.5
Vin=3.25V
4
3
2
1
0
-50 -250255075 100 125 150 175
Tc (°C)
Ron ( mOhm)
30
27.5
25
22.5
20
17.5
15
12.5
10
7.5
5
2.5
0
I
=10A
OUT
5 10152025303540
Tc= 150ºC
Tc= 25ºC
Tc= - 40ºC
Vcc (V)
Figure 12. Input high level
Vih (V)
3.6
3.4
3.2
3
2.8
2.6
2.4
2.2
2
-50 -250255075 100 125 150 175
Tc (°C)
CC
Doc ID 10896 Rev 315/27
Page 16
Electrical specificationsVN920SP-E
Figure 13. Input low levelFigure 14. Input hysteresis voltage
Vil (V)
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
-50 - 250255075 100 125 150 175
Tc (°C)
Figure 15. Turn-on voltage slopeFigure 16. Turn-off voltage slope
dVout/dt (on) (V/ms)
700
650
600
550
500
450
400
350
300
250
Vcc=13V
Rl=1 .3Ohm
-50 - 25025 50 75 100 125 1 50 175
Tc (ºC)
Vhyst (V)
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
-50 -2502550 75 100 125 150 175
Tc (°C)
dVout/dt(off) (V/ms)
550
500
450
400
350
300
250
200
150
100
50
Vcc=13V
Rl=1.3Ohm
0
-50 -250255075 100 125 150 175
Tc (°C)
Figure 17. Overvoltage shutdownFigure 18. I
Vov (V)
50
48
46
44
42
40
38
36
34
32
30
-50 -250255075 100 125 150 175
Ilim (A)
100
Tc (°C)
16/27Doc ID 10896 Rev 3
vs T
LIM
90
80
70
60
50
40
30
20
10
0
-50 -2502550 75 100 125 150 175
case
Vcc=13V
Tc (°C)
Page 17
VN920SP-EApplication information
3 Application information
Figure 19. Application schematic
+5V
GND
V
CC
OUTPUT
D
GND
R
prot
INPUT
R
μ
C
prot
R
SENSE
CURRENT SENSE
V
GND
R
GND
3.1 GND protection network against reverse battery
3.1.1 Solution 1: resistor in the ground line (R
This can be used with any type of load.
GND
only)
D
ld
The following is an indication on how to dimension the R
1.R
2. R
where - I
≤ 600 mV / (I
GND
≥ (-VCC) / (-I
GND
is the DC reverse ground pin current and can be found in the absolute
GND
S(on)max
GND
)
)
GND
resistor.
maximum rating section of the device’s datasheet.
Power dissipation in R
P
= (-VCC)2/ R
D
GND
GND
(when V
< 0: during reverse battery situations) is:
CC
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I
S(on)max
becomes the sum of the
maximum on-state currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground then the
R
produces a shift (I
GND
S(on)max
* R
) in the input thresholds and the status output
GND
values. This shift varies depending on how many devices are ON in the case of several
high-side drivers sharing the same R
GND
.
If the calculated power dissipation leads to a large resistor or several devices have to share
the same resistor then ST suggests to utilize solution 2 (see Section 3.1.2).
Doc ID 10896 Rev 317/27
Page 18
Application informationVN920SP-E
3.1.2 Solution 2: diode (D
A resistor (R
= 1 kΩ) should be inserted in parallel to D
GND
) in the ground line
GND
inductive load.
This small signal diode can be safely shared amongst several different HSDs. Also in this
case, the presence of the ground network produces a shift (∼600mV) in the input threshold
and in the status output values if the microprocessor ground is not common to the device
ground. This shift does not vary if more than one HSD shares the same diode/resistor
network.
Series resistor in INPUT and STATUS lines are also required to prevent that, during battery
voltage transient, the current exceeds the absolute maximum rating.
Safest configuration for unused INPUT and STATUS pin is to leave them unconnected, while
unused SENSE pin has to be connected to ground pin.
3.2 Load dump protection
Dld is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds the
V
max DC rating. The same applies if the device is subject to transients on the VCC line
CC
that are greater than the ones shown in Ta b le 1 2 .
3.3 MCU I/Os protection
if the device drives an
GND
If a ground protection network is used and negative transient are present on the VCC line,
the control pins is pulled negative. ST suggests to insert a resistor (R
) in line to prevent
prot
the microcontroller I/Os pins to latch-up.
The value of these resistors is a compromise between the leakage current of microcontroller
and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of
microcontroller I/Os.
-V
CCpeak/Ilatchup
≤ R
prot
≤ (V
OHµC-VIH-VGND
) / I
IHmax
Calculation example:
For V
CCpeak
5kΩ ≤ R
= -100 V and I
≤ 65 kΩ.
prot
latchup
≥ 20 mA; V
OHµC
≥ 4.5 V
Recommended values:
R
=10kΩ.
prot
18/27Doc ID 10896 Rev 3
Page 19
VN920SP-EApplication information
3.4 PowerSO-10 maximum demagnetization energy
(V
Figure 20. PowerSO-10 maximum turn-off current versus inductance
=13.5V)
CC
I
LM A X ( A)
100
A
10
B
C
1
0,010,1110100
A: T
B: T
C: T
VIN, I
= 150 °C single pulse
jstart
= 100 °C repetitive pulse
jstart
= 125 °C repetitive pulse
jstart
L
Note:Values are generated with R
demagnetization) of every pulse must not exceed the temperature specified above for
curves B and C.
L( mH)
DemagnetizationDemagnetizationDemagnetization
=0Ω.In case of repetitive pulses, T
L
(at beginning of each
jstart
t
Doc ID 10896 Rev 319/27
Page 20
Package and PCB thermal dataVN920SP-E
4 Package and PCB thermal data
4.1 PowerSO-10 thermal data
Figure 21. PowerSO-10 PC board
Note:Layout condition of R
thickness = 2 mm, Cu thickness = 35 µm, Copper areas: from minimum pad layout to
2
8cm
).
Figure 22. R
thj-amb
and Zth measurements (PCB FR4 area = 58 mm x 58 mm, PCB
th
vs PCB copper area in open box free air condition
20/27Doc ID 10896 Rev 3
Page 21
VN920SP-EPackage and PCB thermal data
Figure 23. PowerSO-10 thermal impedance junction ambient single pulse
Equation 1
Z
THδ
where
: pulse calculation formula
RTHδ Z
THtp
1 δ–()+⋅=
δtpT⁄=
Figure 24. Thermal fitting model of a single channel HSD in PowerSO-10
Tj
C1
R1R2
Pd
C2
C3
R3
C4
R4
T_amb
C5
R5
C6
R6
Doc ID 10896 Rev 321/27
Page 22
Package and PCB thermal dataVN920SP-E
Table 15.Thermal parameters
Area / island (cm2)Footprint6
R1 (°C/W)0.02
R2 (°C/W)0.1
R3 (°C/W)0.2
R4 (°C/W)0.8
R5 (°C/W)12
R6 (°C/W)3722
C1 (W.s/°C)0.0015
C2 (W.s/°C)7.00E-03
C3 (W.s/°C)0.015
C4 (W.s/°C)0.3
C5 (W.s/°C)0.75
C6 (W.s/°C)35
22/27Doc ID 10896 Rev 3
Page 23
VN920SP-EPackage and packing information
5 Package and packing information
5.1 ECOPACK® packages
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
5.2 PowerSO-10 mechanical data
Figure 25. PowerSO-10 package dimensions
Doc ID 10896 Rev 323/27
Page 24
Package and packing informationVN920SP-E
Table 16.PowerSO-10 mechanical data
Millimeters
Dim.
Min.Typ.Max.
A3.353.65
(1)
A
A10.000.10
B0.400.60
(1)
B
C0.350.55
(1)
C
D9.409.60
D17.407.60
E9.309.50
3.43.6
0.370.53
0.230.32
E27.207.60
(1)
E2
E45.906.10
(1)
E4
e1.27
F1.251.35
(1)
F
H13.8014.40
(1)
H
h0.50
L1.201.80
(1)
L
a0°8°
(1)
α
1. Muar only POA P013P.
7.307.50
5.906.30
1.201.40
13.8514.35
0.801.10
2°8°
24/27Doc ID 10896 Rev 3
Page 25
VN920SP-EPackage and packing information
5.3 PowerSO-10 packing information
Figure 26. PowerSO-10 suggested pad layout and tube shipment (no suffix)
Figure 27. PowerSO-10 tape and reel shipment (suffix “TR”)
Reel dimensions
Tape dimensions
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
Base Q.ty600
Bulk Q.ty600
A (max)330
B (min)1.5
C (± 0.2)13
F20.2
G (+ 2 / -0)24.4
N (min)60
T (max)30.4
Empty components pock ets
saled with cover tape.
User direction of feed
Start
No componentsNo componentsComponents
500mm min
Doc ID 10896 Rev 325/27
Page 26
Revision historyVN920SP-E
6 Revision history
Table 17.Document revision history
DateRevisionChanges
01-Oct-20041Initial release.
17-May-20102Updated Features list.
07-Feb-20113Updated Table 6: Switching (V
CC
=13V)
26/27Doc ID 10896 Rev 3
Page 27
VN920SP-E
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