The VN920DB5-E is a monolithic device designed
using STMicroelectronics™ VIPower™ M0-3
technology. The VN920DB5-E is intended for
driving any type of load with one side connected
to ground. The active V
protects the device against low energy spikes
(see ISO7637 transient compatibility table).
Active current limitation combined with thermal
shutdown and automatic restart protects the
device against overload. The device detects the
open-load condition in both the on-state and
off-state. In the off-state the device detects if the
output is shorted to V
turns-off in the case where the ground pin
becomes disconnected.
Table 2.Suggested connections for unused and not connected pins
Connection / pinStatusN.C.OutputInput
FloatingXXXX
To groundXThrough 10 KΩ resistor
Doc ID 17493 Rev 25/26
Page 6
Electrical specificationsVN920DB5-E
2 Electrical specifications
Figure 3.Current and voltage conventions
I
S
V
I
IN
INPUT
I
STAT
STATUS
V
IN
V
STAT
2.1 Absolute maximum ratings
V
CC
GND
OUTPUT
I
GND
F
I
OUT
V
CC
V
OUT
Stressing the device above the rating listed in the Ta bl e 3 may cause permanent damage to
the device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the operating sections of this specification is not implied.
Exposure to Absolute maximum rating conditions for extended periods may affect device
reliability. Refer also to the STMicroelectronics sure program and other relevant quality
document.
Table 3.Absolute maximum ratings
SymbolParameterValueUnit
DC supply voltage41V
Reverse DC supply voltage- 0.3V
CC
DC reverse ground pin current- 200mA
DC output currentInternally limitedA
Reverse DC output current - 25A
DC input current+/- 10mA
DC Status current+/- 10mA
Electrostatic discharge
(Human Body Model: R = 1.5 KΩ; C = 100 pF)
– INPUT
–STATUS
–OUTPUT
–V
1. When mounted on a standard single-sided FR-4 board with 0.5 cm2 of Cu (at least 35 µm thick).
Thermal resistance junction-case1.3°C/W
Thermal resistance junction-ambient51.3
(1)
°C/W
Doc ID 17493 Rev 27/26
Page 8
Electrical specificationsVN920DB5-E
2.3 Electrical characteristics
Values specified in this section are for 8 V < V
< 36 V; -40 °C < Tj < 150 °C, unless
CC
otherwise stated.
Tabl e 5.Pow er
SymbolParameterTest conditionsMin.Typ. Max. Unit
V
V
V
USDhyst
V
R
I
L(off1)
I
L(off2)
I
L(off3)
I
L(off4)
Operating supply voltage5.51336V
CC
Undervoltage shutdown345.5V
USD
Undervoltage shutdown
hysteresis
Overvoltage shutdown36V
OV
I
= 10 A; Tj = 25 °C;
OUT
On-state resistance
ON
Supply current
I
S
Off-state output currentV
Off-state output currentV
Off-state output current
Off-state output current
= 10 A;
I
OUT
= 3 A; V
I
OUT
Off-state; V
= V
V
IN
OUT
Off-state; V
= V
V
IN
OUT
On-state; V
= 0A
I
OUT
= V
IN
OUT
= 0 V; V
IN
V
= V
IN
OUT
= 125 °C
T
j
V
= V
IN
OUT
= 25 °C
T
j
= 6 V
CC
= 13 V;
CC
= 0 V
= 13 V;
CC
= 0 V; Tj = 25 °C
= 13V; V
CC
IN
= 5V;
= 0 V050µA
= 3.5 V-750µA
OUT
= 0 V; V
= 0 V; V
CC
CC
= 13 V;
= 13 V;
0.5V
18
36
50
101025
20
3.5
5µA
3µA
mΩ
mΩ
mΩ
µA
µA
mA
Table 6.Switching (VCC=13 V)
SymbolParameterTest conditionsMin.Typ. Max. Unit
dV
dV
t
d(on)
t
d(off)
OUT
OUT
Turn-on delay time RL = 1.3 Ω 50µs
Turn-off delay time RL = 1.3 Ω50µs
/dt
Turn-on voltage slope RL = 1.3 ΩSee Figure 20V/µs
(on)
/dt
Turn-off voltage slope RL = 1.3 ΩSee Figure 21V/µs
(off)
8/26Doc ID 17493 Rev 2
Page 9
VN920DB5-EElectrical specifications
Table 7.Input pin
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
I
V
I
V
V
Tabl e 8.VCC output diode
Input low level1.25V
IL
Low level input currentV
IL
Input high level3.25V
IH
High level input currentV
IH
Input hysteresis voltage0.5V
hyst
Input clamp voltage
ICL
= 1.25 V1µA
IN
= 3.25 V10µA
IN
I
= 1 mA
IN
= -1 mA
I
IN
66.8
- 0.7
8V
SymbolParameterTest conditionsMin.Typ. Max. Unit
V
Table 9.Status pin
Forward on voltage- I
F
= 5.5 A; Tj = 150 °C--0.7V
OUT
SymbolParameterTest conditionsMin.Typ. Max. Unit
V
STAT
I
LSTAT
C
STAT
V
SCL
Status low output voltageI
Status leakage currentNormal operation; V
Status pin input capacitance Normal operation; V
Status clamp voltage
= 1.6 mA0.5V
STAT
= 5 V10µA
STAT
= 5 V100pF
STAT
I
STAT
I
STAT
= 1 mA
= - 1 mA
66.8
- 0.7
8V
V
V
Table 10.Protections
(1)
SymbolParameterTest conditionsMin.Typ.Max.Unit
T
TSD
T
T
hyst
t
SDL
I
lim
V
demag
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device operates under
abnormal conditions this software must limit the duration and number of activation cycles.
Shutdown temperature150175200°C
Reset temperature135°C
R
Thermal hysteresis715°C
Status delay in overload
condition
Current limitation
Turn-off output clamp
voltage
T
> T
j
jsh
VCC = 13 V
5.5 V < V
I
OUT
V
IN
CC
= 2 A;
= 0 V;
L = 6 mH
< 36 V
304575
V
CC
- 41 V
CC
- 48 V
20ms
75
- 55V
CC
Doc ID 17493 Rev 29/26
A
A
Page 10
Electrical specificationsVN920DB5-E
Table 11.Open-load detection
SymbolParameter
I
OL
t
DOL(on)
V
t
DOL(off)
Open-load on-state detection
threshold
Open-load on-state detection delayI
Open-load off-state voltage detection
OL
threshold
Open-load detection delay at turn-off1000µs
Figure 4.Status timings
OPEN-LOAD STATUS TIMING (with external pull-up)
V
> V
OUT
OL
V
IN
V
STAT
t
DOL(off)
I
OUT
t
DOL(on)
< I
OL
Test
conditions
V
= 5 V 300500700mA
IN
= 0 A 250µs
OUT
V
= 0 V1.52.53.5V
IN
Min.Typ.Max.Unit
OVERTEMP STATUS TIMING
Tj > T
V
V
IN
STAT
t
SDL
jsh
t
SDL
Figure 5.Switching time waveforms
V
OUT
80%
dV
/dt
OUT
(on)
V
IN
Figure 1: Test Conditions for High Side switching times measurement.
t
d(on)
10%
t
d(off)
90%
/dt
dV
OUT
(off)
t
t
10/26Doc ID 17493 Rev 2
Page 11
VN920DB5-EElectrical specifications
Table 12.Truth table
ConditionsInputOutputStatus
Normal operation
L
H
L
Current limitation
H
H
Overtemperature
Undervoltage
Overvoltage
Output voltage > V
Output current < I
Table 13.Electrical transient requirements
OL
OL
L
H
L
H
L
H
L
H
L
H
ISO T/R
Test level
L
H
L
X
X
(T
(T
< T
j
> T
j
L
L
L
L
L
L
H
H
L
H
TSD
TSD
H
H
H
) H
) L
H
L
X
X
H
H
L
H
H
L
7637/1
test pulse
1- 25V
2+ 25V
3a- 25 V
3b+ 25 V
4- 4V
5+ 26.5 V
1. All functions of the device are performed as designed after exposure to disturbance.
2. One or more functions of the device is not performed as designed after exposure and cannot be returned to
proper operation without replacing the device.
IIIIIIIVDelays and impedance
(1)
(1)
(1)
(1)
(1)
(1)
- 50 V
+ 50 V
- 50 V
+ 50 V
- 5 V
+ 46.5 V
(1)
(1)
(1)
(1)
(1)
(2)
- 75 V
+ 75 V
- 100 V
+ 75 V
- 6 V
+ 66.5 V
(1)
(1)
(1)
(1)
(1)
(2)
- 100 V
+ 100 V
- 150 V
+ 100 V
- 7 V
+ 86.5 V
(1)
(1)
(1)
(1)
(1)
(2)
2ms,10Ω
0.2 ms, 10 Ω
0.1 µs, 50 Ω
0.1 µs, 50 Ω
100 ms, 0.01 Ω
400 ms, 2 Ω
Doc ID 17493 Rev 211/26
Page 12
Electrical specificationsVN920DB5-E
Figure 6.Waveforms
NORMAL OPERATION
INPUT
LOAD VOLTAGE
STATUS
UNDERVOLTAGE
V
CC
INPUT
LOAD VOLTAGE
V
USD
V
USDhyst
STATUS
V
CC
INPUT
LOAD VOLTAGE
STATUS
INPUT
LOAD VOLTAGE
STATUS
INPUT
LOAD VOLTAGE
STATUS
undefined
OVERVOLTAGE
V
CC<VOV
V
> V
CC
OV
OPEN-LOAD with external pull-up
V
> V
OUT
V
OL
OL
OPEN-LOAD without external pull-up
T
T
j
TSD
T
R
OVERTEMPERATURE
INPUT
LOAD CURRENT
STATUS
12/26Doc ID 17493 Rev 2
Page 13
VN920DB5-EElectrical specifications
2.4 Electrical characteristics curves
Figure 7.Off-state output currentFigure 8.High level input current
IL(off1) (µA)
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
-50 -250255075 100 125 150 175
Off state
Vcc=36V
Vin=Vout=0V
Tc (ºC)
Figure 9.Input clamp voltageFigure 10. Status leakage current
Iih (uA)
5
4.5
3.5
2.5
1.5
0.5
Vin=3.25V
4
3
2
1
0
-50 -250255075 100 125 150 175
Tc (°C)
Vicl (V)
8
7.8
7.6
7.4
7.2
7
6.8
6.6
6.4
6.2
6
Iin=1mA
-50 -250255075 100 125 150 175
Tc (°C)
Ilstat(μA)
0.05
0.045
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
Vstat=5V
0
-50 -250255075 100 125 150 175
Tc ( ºC )
Figure 11. Status low output voltageFigure 12. Status clamp voltage
Vstat (V)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Istat=1.6mA
-50 -250255075 100 125 150 175
Tc (°C)
Vscl (V)
8
7.8
7.6
7.4
7.2
6.8
6.6
6.4
6.2
Istat=1mA
7
6
-50 -250255075 100 125 150 175
Tc (°C)
Doc ID 17493 Rev 213/26
Page 14
Electrical specificationsVN920DB5-E
Figure 13. On-state resistance vs T
Ron (mOhm)
50
45
40
35
30
25
20
15
10
5
0
-50 -250255075 100 125 150 175
Iout=10A
Vcc=8V; 36V
Tc ( ºC )
case
Figure 14. On-state resistance vs V
Ron (mOhm)
50
45
40
35
30
25
20
15
10
5
0
5 10152025303540
Iout=10A
Vcc (V)
Figure 15. Overvoltage shutdownFigure 16. Input high level
Vov (V)
50
48
46
44
42
40
38
36
34
32
30
-50 -250255075 100 125 150 175
Tc (°C)
Vih (V)
3.6
3.4
3.2
3
2.8
2.6
2.4
2.2
2
-50 -250255075 100 125 150 175
Tc (°C)
CC
Tc=150ºC
Tc= 25 ºC
Tc= -40 ºC
Figure 17. Input low levelFigure 18. Input hysteresis voltage
Vil (V)
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
-50 -250255075 100 125 150 175
Tc (°C)
14/26Doc ID 17493 Rev 2
Vhyst (V)
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
-50 -250255075 100 125 150 175
Tc (°C)
Page 15
VN920DB5-EElectrical specifications
Figure 19. I
Ilim (A)
100
90
80
70
60
50
40
30
20
10
0
-50 -250255075 100 125 150 175
lim
Vcc=13V
vs T
case
Tc (°C)
Figure 21. Turn-off voltage slope
dVout/dt(off) (V/ms)
550
500
450
400
350
300
250
200
150
100
50
Vcc=13V
Rl=1.3Ohm
0
-50 -250255075 100 125 150 175
Tc (°C)
Figure 20. Turn-on voltage slope
dVout/dt(on) (V/ms)
700
650
600
550
500
450
400
350
300
250
-50 -250255075 100 125 150 175
Vcc=13V
Rl=1.3Ohm
Tc (ºC)
Doc ID 17493 Rev 215/26
Page 16
Application informationVN920DB5-E
3 Application information
Figure 22. Application schematic
+5V
μ
C
+5V
GND
R
GND
V
CC
OUTPUT
D
GND
R
prot
STATUS
R
prot
INPUT
V
GND
3.1 GND protection network against reverse battery
3.1.1 Solution 1: resistor in the ground line (R
GND
only)
D
ld
This can be used with any type of load.
The following is an indication on how to dimension the R
1.R
2. R
where - I
≤ 600 mV / (I
GND
≥ (- VCC) / (- I
GND
is the DC reverse ground pin current and can be found in the absolute
GND
S(on)max
GND
).
)
maximum rating section of the device’s datasheet.
Power Dissipation in R
P
= (- VCC)2/ R
D
GND
GND
(when V
< 0: during reverse battery situations) is:
CC
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I
maximum on-state currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground then the
R
produces a shift (I
GND
S(on)max
* R
) in the input thresholds and the status output
GND
values. This shift varies depending on how many devices are ON in the case of several high
side drivers sharing the same R
GND
.
If the calculated power dissipation leads to a large resistor or several devices have to share
the same resistor then ST suggests to utilize solution 2 (see Section 3.1.2).
16/26Doc ID 17493 Rev 2
resistor.
GND
S(on)max
becomes the sum of the
Page 17
VN920DB5-EApplication information
3.1.2 Solution 2: diode (D
A resistor (R
= 1 kΩ) should be inserted in parallel to D
GND
) in the ground line
GND
inductive load.
This small signal diode can be safely shared amongst several different HSDs. Also in this
case, the presence of the ground network produces a shift (~600 mV) in the input threshold
and in the status output values if the microprocessor ground is not common to the device
ground. This shift does not vary if more than one HSD shares the same diode/resistor
network.
Series resistor in INPUT and STATUS lines are also required to prevent that, during battery
voltage transient, the current exceeds the absolute maximum rating.
Safest configuration for unused INPUT and STATUS pin is to leave them unconnected.
3.2 Load dump protection
Dld is necessary (voltage transient suppressor) if the load dump peak voltage exceeds the
V
max DC rating. The same applies if the device is subject to transients on the VCC line
CC
that are greater than the ones shown in Ta b le 13.
3.3 MCU I/Os protection
If a ground protection network is used and negative transient are present on the VCC line,
the control pins are pulled negative. ST suggests to insert a resistor (R
the microcontroller I/Os pins to latch-up.
if the device drives an
GND
) in line to prevent
prot
The value of these resistors is a compromise between the leakage current of microcontroller
and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of
microcontroller I/Os.
-V
CCpeak/Ilatchup
≤ R
prot
≤ (V
OHµC-VIH-VGND
) / I
IHmax
Calculation example:
For V
CCpeak
5kΩ ≤ R
= -100 V and I
≤ 65 kΩ.
prot
latchup
≥ 20 mA; V
OHµC
≥ 4.5 V
Recommended values:
R
=10kΩ .
prot
Doc ID 17493 Rev 217/26
Page 18
Application informationVN920DB5-E
3.4 P2PAK maximum demagnetization energy (VCC = 13.5 V)
Figure 23.
LMAX (A)
I
P2PAK
maximum turn-off current versus inductance
100
A
B
C
10
1
0.010.1110100
L(mH)
A: T
B: T
C: T
VIN, I
= 150 °C single pulse
jstart
= 100 °C repetitive pulse
jstart
= 125 °C repetitive pulse
jstart
L
Note:Values are generated with R
demagnetization) of every pulse must not exceed the temperature specified above for
curves A and B.
DemagnetizationDemagnetizationDemagnetization
=0Ω.In case of repetitive pulses, T
L
(at beginning of each
jstart
t
18/26Doc ID 17493 Rev 2
Page 19
VN920DB5-EP2PAK thermal data
4 P2PAK thermal data
Figure 24. P2PAK PC board
Note:Layout condition of R
thickness = 2 mm, Cu thickness = 35 μm , Copper areas: 0.97 cm
Figure 25. P
2
PAK R
RTHj_amb (°C/W)
55
50
45
40
35
30
0246810
and Zth measurements (PCB FR4 area = 60 mm x 60 mm, PCB
th
thj-amb
vs PCB copper area in open box free air condition
2
, 8 cm2).
Tj-Tamb=50°C
PCB Cu heatsink area (cm^2)
Doc ID 17493 Rev 219/26
Page 20
P2PAK thermal dataVN920DB5-E
Figure 26. P2PAK thermal impedance junction ambient single pulse
ZT H (°C /W)
1000
100
10
1
0.1
0.01
0.00010.0010.010.11101001000
Time (s)
Equation 1: pulse calculation formula
Z
THδ
where δ = t
R
TH
P
δZ
/T
THtp
1 δ–()+⋅=
0.97 cm
6 cm
2
2
Figure 27. Thermal fitting model of a single channel HSD in P
20/26Doc ID 17493 Rev 2
2
PAK
Page 21
VN920DB5-EP2PAK thermal data
Tabl e 14 .P2PAK thermal parameters
Area/island (cm2)0.976
R1 (°C/W)0.02
R2 (°C/W)0.1
R3 (°C/W)0.22
R4 (°C/W)4
R5 (°C/W)9
R6 (°C/W)3722
C1 (W·s/°C)0.0015
C2 (W·s/°C)0.007
C3 (W·s/°C)0.015
C4 (W·s/°C)0.4
C5 (W·s/°C)2
C6 (W·s/°C)35
Doc ID 17493 Rev 221/26
Page 22
Package and packing informationVN920DB5-E
5 Package and packing information
5.1 ECOPACK® packages
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
5.2 P2PAK mechanical data
Figure 28. P2PAK package dimensions
22/26Doc ID 17493 Rev 2
P010R
Page 23
VN920DB5-EPackage and packing information
Tabl e 15 .P2PAK mechanical data
mm
Dim.
Min.Typ.Max.
A4.304.80
A12.402.80
A20.030.23
b0.801.05
c0.450.60
c21.171.37
D8.959.35
D28.00
E10.0010.40
E18.50
e3.203.60
e16.607.00
L13.7014.50
L21.251.40
L30.901.70
L51.552.40
R
0.40
V20º8º
Package weight1.40 Gr (typ)
Doc ID 17493 Rev 223/26
Page 24
Package and packing informationVN920DB5-E
5.3 P2PAK packing information
Figure 29. P2PAK tube shipment (no suffix)
Base Q.ty50
Bulk Q.ty1000
Figure 30. P
B
C
A
2
PAK tape and reel (suffix “13TR”)
Tube length (± 0.5)532
A18
B33.1
C (± 0.1)1
All dimensions are in mm.
REEL DIMENSIONS
All dimensions are in mm.
Base Q.ty1000
Bulk Q.ty1000
A (max)330
B (min)1.5
C (± 0.2)13
F20.2
G (+ 2 / -0)24.4
N (min)60
T (max)30.4
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986
Updated following tables:
– Table 3: Absolute maximum ratings
– Table 4: Thermal data
Doc ID 17493 Rev 225/26
Page 26
VN920DB5-E
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