The VN920B5-E is a monolithic device designed
in STMicroelectronics™ VIPower™ M0-3
technology. The VN920B5-E is intended for
driving any type of load with one side connected
to ground.
The active V
pin voltage clamp protects the
CC
device against low energy spikes (see ISO7637
transient compatibility table).
Active current limitation combined with thermal
shutdown and automatic restart protect the device
against overload.
The device integrates an analog current sense
output which delivers a current proportional to the
load current. The device automatically turns off in
the case where the ground pin becomes
disconnected.
Table 2.Suggested connections for unused and not connected pins
Connection / pinCurrent SenseN.C.OutputInput
FloatingXXX
To ground
Through 1KΩ
resistor
X
Through 10KΩ
Doc ID 17608 Rev 15/26
resistor
Page 6
Electrical specificationsVN920B5-E
2 Electrical specifications
Figure 3.Current and voltage conventions
I
S
V
I
IN
V
IN
INPUT
CURRENT SENSE
2.1 Absolute maximum ratings
GND
CC
OUTPUT
I
GND
I
OUT
I
SENSE
V
SENSE
V
F
V
OUT
V
CC
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to Absolute maximum rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics sure
program and other relevant quality document.
Table 3.Absolute maximum ratings
SymbolParameter
V
- V
- I
I
OUT
- I
OUT
I
V
CSENSE
CC
CC
gnd
IN
DC supply voltage41V
Reverse DC supply voltage- 0.3V
DC reverse ground pin current- 200mA
DC output currentInternally limitedA
Reverse DC output current - 21A
DC input current+/- 10mA
Current sense maximum voltage
Electrostatic discharge (human body model:
R=1.5KΩ; C = 100 pF)
1. When mounted on a standard single-sided FR-4 board with 0.5cm2 of Cu (at least 35μm thick).
2. When mounted on a standard single-sided FR-4 board with 6cm2 of Cu (at least 35μm thick).
Thermal resistance junction-case1.3°C/W
Thermal resistance junction-lead°C/W
Thermal resistance junction-ambient
51.3
37
(2)
(1)
°C/W
°C/W
Doc ID 17608 Rev 17/26
Page 8
Electrical specificationsVN920B5-E
2.3 Electrical characteristics
Values specified in this section are for 8 V < V
< 36 V; -40 °C < Tj < 150 °C, unless
CC
otherwise stated.
Table 5.Power
SymbolParameterTest conditionsMin.Typ.Max. Unit
V
V
V
R
V
CLAMP
I
L(off1)
I
L(off2)
I
L(off3)
I
L(off4)
Operating supply voltage5.51336V
CC
Undervoltage shutdown345.5V
USD
Overvoltage shutdown36V
OV
I
= 10 A; Tj = 25 °C16mΩ
OUT
On-state resistance
ON
Clamp voltageI
Supply current
I
S
Off-state output currentV
Off-state output currentV
Off-state output current
Off-state output current
= 10 A32mΩ
I
OUT
= 3 A; V
I
OUT
= 20 mA414855V
CC
Off-state; V
= V
V
IN
OUT
Off-state; V
= V
V
IN
OUT
On-state; V
= 0 A; R
I
OUT
= V
IN
OUT
= 0 V; V
IN
V
= V
IN
OUT
= 125 °C
T
j
V
= V
IN
OUT
= 25 °C
T
j
= 6 V55mΩ
CC
= 13 V;
CC
= 0 V
= 13 V;
CC
= 0 V; Tj = 25 °C
= 13 V; V
CC
SENSE
= 5 V;
IN
= 3.9 kΩ
= 0 V050µA
= 3.5 V-750µA
OUT
= 0V; V
= 0 V; V
CC
CC
= 13 V;
= 13 V;
1025µA
1020µA
5mA
5µA
3µA
Note:V
Table 6.Switching (VCC=13V)
and VOV are correlated. Typical difference is 5V.
CLAMP
SymbolParameterTest conditionsMin.Typ.Max. Unit
Turn-on delay time RL = 1.3 Ω (see Figure 4)50µs
Turn-off delay time RL = 1.3 Ω (see Figure 4)50µs
/dt
Turn-on voltage slope RL = 1.3 Ω (see Figure 4)See Figure 10V/µs
(on)
/dt
Turn-off voltage slope RL = 1.3 Ω (see Figure 4)See Figure 12V/µs
(off)
dV
dV
t
d(on)
t
d(off)
OUT
OUT
8/26Doc ID 17608 Rev 1
Page 9
VN920B5-EElectrical specifications
Table 7.Logic inputs
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
V
I(hyst)
V
V
Input low level voltage1.25V
IL
Low level input currentV
I
IL
Input high-level voltage3.25V
IH
I
High-level input currentV
IH
= 1.25 V1µA
IN
= 3.25 V10µA
IN
Input hysteresis voltage0.5V
I
= 1 mA66.88V
Input clamp voltage
ICL
IN
I
= - 1 mA-0.7V
IN
Table 8.Current sense (9 V ≤ VCC ≤ 16 V)
SymbolParameterTest conditionsMin.Typ.Max.Unit
I
dK
dK
K
1
1/K1
K
2
2/K2
I
OUT/ISENSE
Current sense ratio drift
I
OUT/ISENSE
Current sense ratio drift
= 1 A; V
OUT
= -40 °C...150 °C
T
j
I
= 1 A; V
OUT
= - 40 °C...150 °C
T
j
I
= 10 A; V
OUT
= - 40 °C
T
j
Tj= 25 °C...150 °C
I
= 10 A; V
OUT
Tj = -40 °C...150 °C
SENSE
SENSE
SENSE
SENSE
= 0.5 V;
= 0.5 V;
= 4 V;
= 4 V;
33004400 6000
-10+10%
4200
4900
6000
4400
4900
5750
-8+8%
I
= 30 A; V
OUT
K
dK
3/K3
I
SENSE0
V
SENSE
V
SENSEH
R
VSENSEH
t
DSENSE
1. Current sense signal delay after positive input slope.
I
3
OUT/ISENSE
Current sense ratio drift
Analog sense current
Max analog sense output
voltage
Sense voltage in
overtemperature condition
Analog sense output
impedance in
overtemperature condition
Current sense delay
response
Tj = -40 °C
= 25 °C...150 °C
T
j
I
= 30 A; V
OUT
= -40 °C...150 °C
T
j
V
= 6...16 V; I
CC
V
SENSE
= -40 °C...150 °C
T
j
V
= 5.5 V; I
CC
R
SENSE
V
> 8 V, I
CC
R
SENSE
V
= 13 V; R
CC
V
= 13 V; Tj > T
CC
output open
To 9 0 % I
= 0 V;
OUT
= 10 kΩ
OUT
= 10 kΩ
SENSE
= 4 V;
SENSE
4200
4900
4400
4900
= 4 V;
SENSE
OUT
= 0 A;
-6+6%
010µA
= 5 A;
= 10 A;
= 3.9 kΩ5.5V
SENSE
;
TSD
(1)
2V
4V
400Ω
5500
5250
500µs
Doc ID 17608 Rev 19/26
Page 10
Electrical specificationsVN920B5-E
Table 9.VCC output diode
SymbolParameterTest conditionsMin.Typ. Max. Unit
V
F
Table 10.Protections
Forward on voltage-I
(1)
= 5 A; Tj = 150 °C——0.6V
OUT
SymbolParameterTest conditionsMin.Typ.Max.Unit
T
TSD
T
T
hyst
I
lim
V
demag
V
1. To ensure long term reliability under heavy over-load or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device operates under
abnormal conditions this software must limit the duration and number of activation cycles.
Table 11.Truth table
Shutdown temperature150175200°C
Reset temperature135°C
R
Thermal hysteresis715°C
V
= 13 V304575A
Current limitation
Turn-off output clamp
voltage
Output voltage drop
ON
limitation
CC
5V < V
I
OUT
< 36 V75A
CC
= 2 A; V
IN
= 0 V;
L = 6 mH
= 1 A;
I
OUT
Tj = -40 °C...150 °C
V
CC
- 41 V
- 48 V
CC
50mV
- 55V
CC
ConditionsInputOutputSense
Normal operation
Overtemperature
Undervoltage
Overvoltage
Short circuit to GND
Short circuit to V
CC
L
H
L
H
L
H
L
H
L
H
H
L
H
L
H
Nominal
L
L
V
L
L
L
L
L
L
L
(T
j>TTSD
(T
H
H
< Nominal
Negative output voltage clampLL0
0
0
SENSEH
0
0
0
0
0
j<TTSD
) V
0
) 0
SENSEH
10/26Doc ID 17608 Rev 1
Page 11
VN920B5-EElectrical specifications
Table 12.Electrical transient requirements
ISO T/R
Test level
7637/1
Test pulse
1- 25V
2+ 25V
3a- 25V
3b+ 25V
4- 4V
5+ 26.5V
1. All functions of the device are performed as designed after exposure to disturbance.
2. One or more functions of the device is not performed as designed after exposure and cannot be returned to
proper operation without replacing the device.
IIIIIIIVDelays and impedance
(1)
(1)
(1)
(1)
(1)
(1)
- 50V
+ 50V
- 50V
+ 50V
- 5V
+ 46.5V
(1)
(1)
(1)
(1)
(1)
(2)
- 75V
+ 75V
- 100V
+ 75V
(1)
- 6V
+ 66.5V
(1)
(1)
(1)
(1)
(2)
- 100V
+ 100V
- 150V
+ 100V
- 7V
+ 86.5V
(1)
(1)
(1)
(1)
(1)
(2)
2ms, 10Ω
0.2ms, 10Ω
0.1µs, 50Ω
0.1µs, 50Ω
100ms, 0.01Ω
400ms, 2Ω
Figure 4.Switching characteristics
V
OUT
90%
t
f
dV
OUT
/dt
(off)
t
dV
I
SENSE
OUT
80%
/dt
(on)
t
90%
r
10%
t
t
d(on)
DSENSE
t
d(off)
INPUT
t
t
Doc ID 17608 Rev 111/26
Page 12
Electrical specificationsVN920B5-E
Figure 5.I
I
OUT/ISENSE
6500
6500
6000
6000
5500
5500
5000
5000
4500
4500
4000
4000
3500
3500
3000
3000
0 2 4 6 8 101214 161820222426283032
OUT/ISENSE
versus I
OUT
max.Tj=25...150°C
min.Tj=25...150°C
I
OUT
max.Tj=-40°C
typical value
min.Tj=-40°C
(A)
12/26Doc ID 17608 Rev 1
Page 13
VN920B5-EElectrical specifications
Figure 6.Waveforms
NORMAL OPERATION
INPUT
LOAD CURRENT
SENSE
UNDERVOLTAGE
V
CC
INPUT
LOAD CURRENT
SENSE
V
CC
INPUT
LOAD CURRENT
SENSE
V
USD
V
VCC > V
OV
USD
V
USDhyst
OVERVOLTAGE
V
OVhyst
INPUT
LOAD CURRENT
LOAD VOLTAGE
SENSE
INPUT
LOAD VOLTAGE
LOAD CURRENT
SENSE
T
j
INPUT
LOAD CURRENT
SENSE
SHORT TO GROUND
SHORT TO V
<Nominal
T
TSD
T
R
OVERTEMPERATURE
CC
<Nominal
I
SENSE
=
V
SENSEH
R
SENSE
Doc ID 17608 Rev 113/26
Page 14
Electrical specificationsVN920B5-E
2.4 Electrical characteristics curves
Figure 7.Off-state output currentFigure 8.High-level input current
Figure 9.Input clamp voltageFigure 10. Turn-on voltage slope
Figure 11. Overvoltage shutdownFigure 12. Turn-off voltage slope
IL(off1) (uA)
9
8
7
6
5
4
3
2
1
0
-50 -250255075100 125 150 175
Tc (°C)
Vicl (V)
10
9.5
9
8.5
8
7.5
7
6.5
6
5.5
5
4.5
4
Iin=1mA
-50 -250255075100 125 150 175
Tc ( °C )
Vov (V)
50
48
46
44
42
40
38
36
34
32
30
-50 -250255075100 125 150 175
Tc (°C)
Iih (uA)
5
4.5
3.5
2.5
1.5
0.5
Vin=3.25V
4
3
2
1
0
-50 -250255075100 125 150 175
Tc (°C)
dVout/dt(on) (V/ms)
700
650
600
550
500
450
400
350
300
250
-50 -250255075100 125 150 175
Vcc=13V
Rl=1.3Ohm
Tc (ºC)
dVout/dt(off) (V/ms)
550
500
450
400
350
300
250
200
150
100
50
0
Vcc=13V
Rl=1.3Ohm
-50 -250255075100 125 150 175
Tc (°C)
14/26Doc ID 17608 Rev 1
Page 15
VN920B5-EElectrical specifications
Figure 13. I
Ilim (A)
100
90
80
70
60
50
40
30
20
10
0
-50 -250255075100 125 150 175
Figure 15. Input high-levelFigure 16. Input hysteresis voltage
Vih (V)
3.6
3.4
3.2
3
2.8
2.6
2.4
2.2
2
-50 -250255075100 125 150 175
vs T
LIM
Vcc=13V
case
Tc (°C)
Tc (°C)
Figure 14. On-state resistance vs V
Ron (mOhm)
50
45
40
35
30
25
20
15
10
5
0
5 10152025303540
Tc= 150ºC
Tc= 25ºC
Tc= - 40ºC
Vcc (V)
Vhyst (V)
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
-50 -250255075100 125 150 175
Tc (°C)
CC
Figure 17. On-state resistance vs T
Ron (mOhm)
50
45
40
35
30
25
20
15
10
5
0
-50 -250255075100 125 150 175
Iout=10A
Vcc=8V; 36V
Tc (ºC)
case
Figure 18. Input low level
Vil (V)
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
-50 -250255075100 125 150 175
Tc (°C)
Doc ID 17608 Rev 115/26
Page 16
Application informationVN920B5-E
3 Application information
Figure 19. Application schematic
+5V
GND
V
CC
OUTPUT
D
GND
R
prot
INPUT
R
μ
C
prot
R
SENSE
CURRENT SENSE
V
GND
R
GND
3.1 GND protection network against reverse battery
3.1.1 Solution 1: resistor in the ground line (R
This can be used with any type of load.
GND
only)
D
ld
The following is an indication on how to dimension the R
1.R
2. R
where -I
≤ 600 mV / (I
GND
≥ (-VCC) / (-I
GND
is the DC reverse ground pin current and can be found in the absolute
GND
S(on)max
GND
)
)
maximum rating section of the device datasheet.
Power Dissipation in R
P
= (-VCC)2/ R
D
GND
GND
(when V
< 0: during reverse battery situations) is:
CC
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I
maximum on-state currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground then the
R
produces a shift (I
GND
S(on)max
* R
) in the input thresholds and the status output
GND
values. This shift varies depending on how many devices are ON in the case of several highside drivers sharing the same R
GND
.
If the calculated power dissipation leads to a large resistor or several devices have to share
the same resistor then ST suggests to utilize Solution 2 (see below).
16/26Doc ID 17608 Rev 1
resistor.
GND
S(on)max
becomes the sum of the
Page 17
VN920B5-EApplication information
3.1.2 Solution 2: diode (D
A resistor (R
= 1 kΩ) should be inserted in parallel to D
GND
) in the ground line
GND
inductive load.
This small signal diode can be safely shared amongst several different HSDs. Also in this
case, the presence of the ground network produces a shift (≈600mV) in the input threshold
and in the status output values if the microprocessor ground is not common to the device
ground. This shift not varies if more than one HSD shares the same diode/resistor network.
Series resistor in INPUT and STATUS lines are also required to prevent that, during battery
voltage transient, the current exceeds the absolute maximum rating.
Safest configuration for unused INPUT and STATUS pin is to leave them unconnected.
3.2 Load dump protection
Dld is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds the
V
max DC rating. The same applies if the device is subject to transients on the VCC line
CC
that are greater than the ones shown in the ISO 7637-2: 2004(E) table.
3.3 MCU I/Os protection
If a ground protection network is used and negative transient are present on the VCC line,
the control pins are pulled negative. ST suggests to insert a resistor (R
the microcontroller I/Os pins to latch-up.
if the device drives an
GND
) in line to prevent
prot
The value of these resistors is a compromise between the leakage current of microcontroller
and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of
microcontroller I/Os.
-V
CCpeak/Ilatchup
≤ R
prot
≤ (V
OHµC-VIH-VGND
) / I
IHmax
Calculation example:
For V
5kΩ ≤ R
Recommended values: R
CCpeak
prot
= -100 V and I
≤ 65 kΩ.
latchup
=10 kΩ.
prot
≥ 20 mA; V
OHµC
≥ 4.5 V
Doc ID 17608 Rev 117/26
Page 18
Application informationVN920B5-E
3.4
P2PAK
Figure 20.
LMAX (A)
I
maximum demagnetization energy (VCC = 13.5V)
P2PAK
maximum turn-off current versus inductance
100
A
B
C
10
1
0.010.1110100
L(mH)
(1)
A: T
B: T
C: T
VIN, I
1. Values are generated with R
In case of repetitive pulses, T
the temperature specified above for curves A and B.
= 150 °C single pulse
jstart
= 100 °C repetitive pulse
jstart
= 125 °C repetitive pulse
jstart
L
DemagnetizationDemagnetizationDemagnetization
=0 Ω.
L
(at beginning of each demagnetization) of every pulse must not exceed
jstart
t
18/26Doc ID 17608 Rev 1
Page 19
VN920B5-EPackage and PCB thermal data
4 Package and PCB thermal data
4.1 P2PAK thermal data
Figure 21. P2PAK PC board
1. Layout condition of R
Cu thickness = 35 μm , Copper areas: 0.97 cm2, 8 cm2).
Figure 22. P2PAK R
and Zth measurements (PCB FR4 area = 60 mm x 60 mm, PCB thickness = 2 mm,
th
thj-amb
(1)
vs PCB copper area in open box free air condition
RTHj_amb (°C/W)
55
50
Tj-Tamb=50°C
45
40
35
30
0246810
PCB Cu heatsink area (cm^2)
Doc ID 17608 Rev 119/26
Page 20
Package and PCB thermal dataVN920B5-E
Figure 23. P2PAK thermal impedance junction ambient single pulse
ZT H (°C/W)
1000
100
10
1
0.1
0.01
0.00010.0010.010.11101001000
Time (s)
Equation 1: pulse calculation formula
Z
THδ
R
TH
δZ
THtp
1δ–()+⋅=
where δ = tP/T
0.97 cm
6 cm
2
2
Figure 24. Thermal fitting model of a single channel HSD in P
20/26Doc ID 17608 Rev 1
2
PAK
Page 21
VN920B5-EPackage and PCB thermal data
Table 13 .P2PAK thermal parameter
Area/island (cm2)0.976
R1 (°C/W)0.02
R2 (°C/W)0.1
R3 (°C/W)0.22
R4 (°C/W)4
R5 (°C/W)9
R6 (°C/W)3722
C1 (W·s/°C)0.0015
C2 (W·s/°C)0.007
C3 (W·s/°C)0.015
C4 (W·s/°C)0.4
C5 (W·s/°C)2
C6 (W·s/°C)35
Doc ID 17608 Rev 121/26
Page 22
Package and packing informationVN920B5-E
5 Package and packing information
5.1 ECOPACK® packages
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
5.2 P2PAK mechanical data
Figure 25. P2PAK package dimensions
22/26Doc ID 17608 Rev 1
P010R
Page 23
VN920B5-EPackage and packing information
Table 14 .P2PAK mechanical data
mm
Dim.
Min.Typ.Max.
A4.304.80
A12.402.80
A20.030.23
b0.801.05
c0.450.60
c21.171.37
D8.959.35
D28.00
E10.0010.40
E18.50
e3.203.60
e16.607.00
L13.7014.50
L21.251.40
L30.901.70
L51.552.40
R0.40
V20º8º
Package weight1.40 Gr (typ)
Doc ID 17608 Rev 123/26
Page 24
Package and packing informationVN920B5-E
5.3 P2PAK packing information
Figure 26. P2PAK tube shipment (no suffix)
Base Q.ty50
Bulk Q.ty1000
Tube length (± 0.5)532
A18
B33.1
C (± 0.1)1
All dimensions are in mm.
REEL DIMENSIONS
All dimensions are in mm.
Base Q.ty1000
Bulk Q.ty1000
A (max)330
B (min)1.5
C (± 0.2)13
F20.2
G (+ 2 / -0)24.4
N (min)60
T (max)30.4
Figure 27. P
B
C
A
2
PAK tape and reel (suffix “TR”)
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986
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right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
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All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
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