The VN610SP is a monolithic device made using
STMicroelectronics VIPower M0-3 technology. It
is intended for driving resistive or inductive loads
with one side connected to ground.
Active V
against low energy spikes (see ISO7637 transient
compatibility table). This device integrates an
analog current sense which delivers a current
proportional to the load current (according to a
known ratio).
Active current limitation combined with thermal
shutdown and automatic restart protect the device
against over-load. Device automatically turns off
in case of ground pin disconnection.
Table 2.Suggested connections for unused and not connected pins
Connection / pinCurrent senseN.C.OutputInput
FloatingXXX
To ground
Through 1KΩ
resistor
Doc ID 6236 Rev 45/26
X
Through 10KΩ
resistor
Page 6
Electrical specificationsVN610SP
2 Electrical specifications
Figure 3.Current and voltage conventions
I
S
V
CC
I
OUT
I
SENSE
V
GND
OUTPUT
I
GND
I
IN
V
IN
INPUT
CURRENT SENSE
SENSE
V
F
V
OUT
V
CC
2.1 Absolute maximum ratings
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality document.
Table 3.Absolute maximum ratings
SymbolParameterValueUnit
V
-V
- I
I
OUT
V
CSENSE
V
DC supply voltage41V
CC
Reverse supply voltage- 0.3V
CC
DC reverse ground pin current- 200mA
GND
Output currentInternally limitedA
I
Reverse output current- 50A
R
Input current +/- 10mA
I
IN
Current sense maximum voltage
Electrostatic discharge (human body model: R = 1.5KΩ;
C = 100pF)
1. When mounted on a standard single-sided FR-4 board with 0.5cm2 of Cu (at least 35 µm thick).
2. When mounted on a standard single-sided FR-4 board with 6 cm2 of Cu (at least 35 µm thick).
Thermal resistance junction-case 0.9°C/W
Thermal resistance junction-ambient50.9
2.3 Electrical characteristics
= 150ºC; IL = 75A)
jstart
(1)
193mJ
(2)
36
°C/W
Values specified in this section are for 8V < V
< 36V; -40°C < Tj < 150°C, unless
CC
otherwise stated.
Table 5.P owe r
SymbolParameterTest conditionsMin. Typ. Max. Unit
V
V
V
R
V
I
I
L(off1)
Operating supply
CC
voltage
Under-voltage shutdown345.5V
USD
Over-voltage shutdown36V
OV
I
= 1.5A; Tj = 25°C
OUT
On-state resistance
ON
Clamp voltageI
clamp
(1)
Supply current
S
Off-state output currentV
= 1.5A; Tj = 150°C
I
OUT
I
OUT
CC
= 9A; V
= 20mA
= 6V
CC
(1)
414855V
Off-state; VCC=13V; VIN=V
Off-state; V
Tj=25°C
On-state; V
I
= 0A; R
OUT
= V
IN
=13V; VIN=V
CC
= 5V; V
IN
SENSE
= 0V050µA
OUT
= 13V;
CC
= 3.9kΩ
OUT
OUT
=0V
=0V;
5.51336V
10
20
35
101025
20
5
mΩ
mΩ
mΩ
µA
mA
mA
Doc ID 6236 Rev 47/26
Page 8
Electrical specificationsVN610SP
Table 5.Power (continued)
SymbolParameterTest conditionsMin. Typ. Max. Unit
I
L(off2)
I
L(off3)
I
L(off4)
1. V
Table 6.Protections
Off-state output currentV
Off-state output current
Off-state output current
and VOV are correlated. Typical difference is 5V.
clamp
= 0V; V
IN
V
= V
IN
Tj =125°C
V
IN =VOUT
Tj = 25°C
= 3.5V-750µA
OUT
=0V; VCC=13V;
OUT
= 0V; V
CC
= 13V;
5µA
3µA
SymbolParameterTest conditionsMin.Typ. Max. Unit
I
T
T
HYST
V
demag
V
lim
TSD
T
R
ON
V
= 13V
DC short circuit current
CC
5.5V < V
CC
< 36V
Thermal shutdown
temperature
Thermal reset
temperature
Thermal hysteresis715°C
Turn-off output voltage
clamp
Output voltage drop
limitation
= 2A; V
I
OUT
= 1.5A
I
OUT
= -40°C...+150°C
T
j
IN
= 0V; L = 6mH
4575120
120AA
150175200°C
135°C
-41VCC-48VCC-
V
CC
55
50mV
V
Note:To ensure long term reliability under heavy over-load or short circuit conditions, protection
and related diagnostic signals must be used together with a proper software strategy. If the
device is subjected to abnormal conditions, this software must limit the duration and number
of activation cycles.
Table 7.VCC - output diode
SymbolParameterTest conditionsMin.Typ. Max.Unit
V
F
Forward on voltage- I
8/26Doc ID 6236 Rev 4
= 8A; Tj = 150°C0.6V
OUT
Page 9
VN610SPElectrical specifications
Table 8.Current sense (9V ≤ V
SymbolParameterTest conditionsMin.Typ.Max. Unit
I
K
1
I
OUT/ISENSE
OUT
Tj = -40°C...150°C
≤ 16V)
CC
= 1.5A; V
SENSE
= 0.5V;
3300 4400 6000
dK
1/K1
K
dK
2/K2
K
dK
3/K3
I
SENSE0
V
SENSE
V
SENSEH
R
VSENSEH
Current sense
ratio drift
I
2
OUT/ISENSE
Current sense
ratio drift
I
3
OUT/ISENSE
Current sense
ratio drift
Analog sense
current
Max analog
sense output
voltage
Analog sense
output voltage in
over-temperature
condition
Analog sense
output
impedance in
over-temperature
condition
= 1.5A; V
I
OUT
SENSE
Tj= - 40°C...150°C
I
= 15A; V
OUT
SENSE
Tj = - 40°C
= 25°C...150°C
T
j
= 15A; V
I
OUT
= -40°C...150°C
T
j
I
= 45A; V
OUT
= -40°C
T
j
= 25°C...150°C
T
j
= 45A; V
I
OUT
= -40°C...150°C
T
j
V
= 6...16V; I
CC
V
SENSE
= -40°C...150°C
T
j
SENSE
SENSE
SENSE
OUT
= 0V;
Off-state; VIN = 0V
On-state; V
= 5.5V; I
V
CC
R
SENSE
> 8V, I
V
CC
R
SENSE
= 13V; R
V
CC
= 13V; Tj > T
V
CC
= 5V
IN
OUT
= 10kΩ
OUT
= 10kΩ
SENSE
= 15A;
all channels open
= 0.5V;
-10+10%
= 4V;
4200
4900
6000
4400
4900
5750
= 4V;
-6+6%
= 4V;
4200
4900
5500
4400
4900
5250
= 4V;
-6+6%
= 0A;
0
0
5
10µAµA
= 7.5A;
3.5
5
= 3.9kΩ5.5V
;
TSD
400Ω
V
V
t
DSENSE
1. Current sense signal delay after positive input slope.
Current sense
delay response
To 9 0% I
SENSE
(1)
Doc ID 6236 Rev 49/26
500µs
Page 10
Electrical specificationsVN610SP
Table 9.Logic inputs
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
V
V
I(hyst)
V
Table 10.Switching (VCC = 13V)
Input low level voltage1.25V
IL
Low level input currentV
I
IL
Input high level voltage3.25V
IH
I
High level input currentV
IH
= 1.25V1µA
IN
= 3.25V10µA
IN
Input hysteresis voltage0.5V
Input clamp voltage
ICL
I
IN
= - 1mA
I
IN
= 1mA
66.8
- 0.7
8V
SymbolParameterTest conditionsMin.Typ.Max. Unit
t
d(on)
t
d(off)
(dV
/dt)onTurn-on voltage slope RL = 0.87Ω (see Figure 4.)
OUT
(dV
/dt)
OUT
Table 11.Truth table
Turn-on delay time RL= 0.87Ω (see Figure 4.)30 µs
Turn-on delay time RL = 0.87Ω (see Figure 4.)30 µs
See
Figure 10.
Turn-off voltage slope RL = 0.87Ω (see Figure 4.)
off
See
Figure 12.
V
V/µs
V/µs
ConditionsInputOutputSense
Normal operation
Over-temperature
Under-voltage
Over-voltage
Short circuit to GND
Short circuit to V
CC
L
H
L
H
L
H
L
H
L
H
H
L
H
L
H
Nominal
L
L
V
SENSEH
L
L
L
L
L
L
L
(T
j>TTSD
(T
H
H
< Nominal
Negative output voltage clampLL0
0
0
0
0
0
0
0
j<TTSD
) V
0
) 0
SENSEH
10/26Doc ID 6236 Rev 4
Page 11
VN610SPElectrical specifications
Table 12.Electrical transient requirements
ISO T/R
Test level
7637/1
Test pulse
1- 25V
2+ 25V
3a- 25V
3b+ 25V
4- 4V
5+ 26.5V
1. All functions of the device are performed as designed after exposure to disturbance.
2. One or more functions of the device is not performed as designed after exposure and cannot be returned to
proper operation without replacing the device.
IIIIIIIVDelays and impedance
(1)
(1)
(1)
(1)
(1)
(1)
- 50V
+ 50V
- 50V
+ 50V
- 5V
+ 46.5V
(1)
(1)
(1)
(1)
(1)
(2)
- 75V
+ 75V
- 100V
+ 75V
(1)
- 6V
+ 66.5V
(1)
(1)
(1)
(1)
(2)
- 100V
+ 100V
- 150V
+ 100V
(1)
- 7V
+ 86.5V
(1)
(1)
(1)
(1)
(2)
2ms, 10Ω
0.2ms, 10Ω
0.1µs, 50Ω
0.1µs, 50Ω
100ms, 0.01Ω
400ms, 2Ω
Figure 4.Switching characteristics
V
OUT
90%
t
f
dV
OUT
/dt
(off)
t
dV
I
SENSE
OUT
80%
/dt
(on)
t
90%
r
10%
t
t
d(on)
DSENSE
t
d(off)
INPUT
t
t
Doc ID 6236 Rev 411/26
Page 12
Electrical specificationsVN610SP
Figure 5.I
I
OUT/ISENSE
6500
6000
5500
5000
4500
4000
3500
3000
0246810121416
OUT/ISENSE
versus I
OUT
max.Tj=25...150°C
min.Tj=25...150°C
I
OUT
max.Tj=-40°C
typical value
min.Tj=-40°C
(A)
12/26Doc ID 6236 Rev 4
Page 13
VN610SPElectrical specifications
Figure 6.Waveforms
NORMAL OPERATION
INPUT
LOAD CURRENT
SENSE CURRENT
UNDERVOLTAGE
V
CC
INPUT
LOAD CURRENT
SENSE CURRENT
V
CC
INPUT
LOAD CURRENT
SENSE
V
USD
V
OV
VCC > V
USD
V
USDhyst
OVERVOLTAGE
V
OVhyst
INPUT
LOAD CURRENT
LOAD VOLTAGE
SENSE CURRENT
INPUT
LOAD VOLTAGE
LOAD CURRENT
SENSE CURRENT
T
j
INPUT
LOAD CURRENT
SENSE CURRENT
SHORT TO GROUND
SHORT TO V
<Nominal
T
TSD
T
R
OVERTEMPERATURE
I
SENSE=VSENSEH
CC
/(R
SENSE+RSENSEH
<Nominal
)
Doc ID 6236 Rev 413/26
Page 14
Electrical specificationsVN610SP
IL(off1) (uA)
Iih (uA)
Vicl (V)
dVout/dt(on) (V/ms)
Vov (V)
dVout/dt(off) (V/ms)
2.4 Electrical characteristics curves
Figure 7.Off-state output currentFigure 8.High level input current
2.5
2.25
2
1.75
1.5
1.25
1
0.75
0.5
0.25
0
-50 -250255075 100 125 150 175
Off state
Vcc=36V
Vin=Vout=0V
5
4.5
3.5
2.5
1.5
0.5
Vin=3.25V
4
3
2
1
0
-50 -250255075 100 125 150 175
Figure 9.Input clamp voltageFigure 10. Turn-on voltage slope
8
7.8
7.6
7.4
7.2
7
6.8
6.6
6.4
6.2
6
Iin=1mA
-50 -250255075 100 125 150 175
800
700
600
500
400
300
200
100
Ri=6.5Ohm
0
-50 -250255075 100 125 150 175
Figure 11. Over-voltage shutdownFigure 12. Turn-off voltage slope
14/26Doc ID 6236 Rev 4
50
48
46
44
42
40
38
36
34
32
30
-50 -250255075 100 125 150 175
600
550
500
450
400
350
300
250
200
Ri=6.5Ohm
-50 -250255075 100 125 150 175
Page 15
VN610SPElectrical specifications
Ilim (A)
Ron (mOhm)
Vih (V)
Vhyst (V)
Ron (mOhm)
Vil (V)
Figure 13. I
vs T
LIM
20
18
16
14
12
10
8
6
4
2
0
Vcc=13V
-50 -250255075 100 125 150 175
case
Figure 14. On-state resistance vs V
25
22.5
20
17.5
15
12.5
10
7.5
5
2.5
0
5 10152025303540
Iout=15A
Tc= 125ºC
Tc= 25º C
Tc= - 4 0º C
Figure 15. Input high levelFigure 16. Input hysteresis voltage
3.6
3.4
3.2
3
2.8
2.6
2.4
2.2
2
-50 -250255075 100 125 150 175
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
-50 -250255075 100 125 150 175
CC
Figure 17. On-state resistance vs TcaseFigure 18. Input low level
25
22.5
20
17.5
15
12.5
10
7.5
5
2.5
0
-50 -250255075 100 125 150 175
Iout=15A
Vcc=8V; 36V
Doc ID 6236 Rev 415/26
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
-50 -250255075 100 125 150 175
Page 16
Application informationVN610SP
3 Application information
Figure 19. Application schematic
+5V
GND
GND
V
CC
OUTPUT
D
GND
R
prot
INPUT
R
μ
C
prot
R
SENSE
CURRENT SENSE
V
R
GND
3.1 GND protection network against reverse battery
This section provides two solutions for implementing a ground protection network against
reverse battery.
3.1.1 Solution 1: a resistor in the ground line (R
GND
only)
D
ld
This can be used with any type of load.
The following show how to dimension the R
1.R
2. R
where - I
≤ 600mV / 2 (I
GND
≥ ( - VCC) / ( - I
GND
is the DC reverse ground pin current and can be found in the absolute
GND
S(on)max
GND
)
)
GND
maximum rating section of the device datasheet.
Power dissipation in R
P
= ( - VCC)2/ R
D
GND
GND
(when V
< 0 during reverse battery situations) is:
CC
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I
maximum on-state currents of the different devices.
Please note that, if the microprocessor ground is not shared by the device ground, then the
R
will produce a shift (I
GND
S(on)max
* R
) in the input thresholds and the status output
GND
values. This shift will vary depending on how many devices are ON in the case of several
high-side drivers sharing the same R
16/26Doc ID 6236 Rev 4
GND
.
resistor:
S(on)max
becomes the sum of the
Page 17
VN610SPApplication information
If the calculated power dissipation requires the use of a large resistor, or several devices
have to share the same resistor, then ST suggests using solution 2 below.
3.1.2 Solution 2: a diode (D
A resistor (R
= 1kΩ) should be inserted in parallel to D
GND
) in the ground line
GND
an inductive load. This small signal diode can be safely shared amongst several different
HSD. Also in this case, the presence of the ground network will produce a shift (j600mV) in
the input threshold and the status output values if the microprocessor ground is not common
with the device ground. This shift will not vary if more than one HSD shares the same
diode/resistor network. Series resistor in INPUT and STATUS lines are also required to
prevent that, during battery voltage transient, the current exceeds the Absolute Maximum
Rating. Safest configuration for unused INPUT and STATUS pin is to leave them
unconnected.
3.2 Load dump protection
Dld is necessary (voltage transient suppressor) if the load dump peak voltage exceeds the
V
maximum DC rating. The same applies if the device is subject to transients on the VCC
CC
line that are greater than those shown in the ISO T/R 7637/1 table.
3.3 MCU I/O protection
If a ground protection network is used and negative transients are present on the VCC line,
the control pins will be pulled negative. ST suggests to insert a resistor (R
prevent the µC I/O pins from latching up.
if the device will be driving
GND
) in line to
prot
The value of these resistors is a compromise between the leakage current of µC and the
current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of µC
I/Os:
- V
CCpeak
/ I
latchup
≤ R
prot
≤ (V
OHμC
- V
IH
- V
GND
) / I
IHmax
Example
For the following conditions:
V
CCpeak
I
latchup
V
OHμC
5kΩ ≤ R
Recommended values are:
R
prot
= - 100V
≥ 20mA
≥ 4.5V
prot
= 10kΩ
≤ 65kΩ.
Doc ID 6236 Rev 417/26
Page 18
Application informationVN610SP
3.4 Maximum demagnetization energy (V
Figure 20. Maximum turn-off current versus load inductance
I
LM AX (A)
1000
100
10
1
0,010,1110100
L( mH)
= 13.5V)
CC
A
B
C
A = single pulse at T
B= repetitive pulse at T
C= repetitive pulse at T
VIN, I
L
Demagnetization
Note:Values are generated with R
In case of repetitive pulses, T
must not exceed the temperature specified above for curves B and C.
= 150ºC
Jstart
= 100ºC
Jstart
= 125ºC
Jstart
Demagnetization
= 0Ω.
L
(at beginning of each demagnetization) of every pulse
jstart
Demagnetization
t
18/26Doc ID 6236 Rev 4
Page 19
VN610SPPackage and PCB thermal data
4 Package and PCB thermal data
4.1 PowerSO-10 thermal data
Figure 21. PowerSO-10 PC board
Note:Layout condition of R
thickness = 2mm, Cu thickness = 35µm, Copper areas: from minimum pad-lay-out to 8cm
Figure 22. R
thj-amb
RTHj_amb (°C/W)
55
50
45
40
35
30
0246810
and Zth measurements (PCB FR4 area = 58mm x 58mm, PCB
th
Vs PCB copper area in open box free air condition
Tj-Tamb=50°C
2
).
PCB Cu heatsink area (cm^2)
Doc ID 6236 Rev 419/26
Page 20
Package and PCB thermal dataVN610SP
Figure 23. Thermal impedance junction ambient single pulse
ZTH (°C/W)
100
Footprint
2
6 cm
10
1
0.1
0.01
0.00010.0010.010.11101001000
Time (s)
Equation 1
Z
THδ
where
: pulse calculation formula
RTHδ Z
THtp
1 δ–()+⋅=
δtpT⁄=
Figure 24. Thermal fitting model of a single channel in PowerSO-10
Tj
C1
R1R2
Pd
C2
C3
R3
C4
R4
T_amb
C5
R5
C6
R6
20/26Doc ID 6236 Rev 4
Page 21
VN610SPPackage and PCB thermal data
Table 13.Thermal parameters
Area / island (cm2)Footprint6
R1 (°C/W)0.016
R2 (°C/W)0.06
R3 (°C/W)0.08
R4 (°C/W)0.8
R5 (°C/W)12
R6 (°C/W)3722
C1 (W.s/°C)0.002
C2 (W.s/°C)1E-02
C3 (W.s/°C)0.04
C4 (W.s/°C)0.3
C5 (W.s/°C)0.75
C6 (W.s/°C)35
Doc ID 6236 Rev 421/26
Page 22
Package and packing informationVN610SP
5 Package and packing information
5.1 ECOPACK® packages
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
5.2 PowerSO-10 mechanical data
Figure 25. PowerSO-10 package dimensions
10
HE
h
A
F
A1
1
eB
0.25
D
= =
D1
= =
E2
DETAIL "A"
B
0.10 A
E
SEATING
PLANE
A
C
B
E4
SEATING
PLANE
A1
DETAIL "A"
22/26Doc ID 6236 Rev 4
L
α
Page 23
VN610SPPackage and packing information
Table 14.PowerSO-10 mechanical data
mm
Dim.
Min.Typ.Max.
A3.353.65
(1)
A
A100.10
B0.400.60
(1)
B
C0.350.55
(1)
C
D9.409.60
D17.407.60
E9.309.50
3.43.6
0.370.53
0.230.32
E27.207.60
(1)
E2
E45.906.10
(1)
E4
e1.27
F1.251.35
(1)
F
H13.8014.40
(1)
H
h0.50
L1.201.80
(1)
L
α0°8°
(1)
α
1. Muar only POA P013P.
7.307.50
5.906.30
1.201.40
13.8514.35
0.801.10
2°8°
Doc ID 6236 Rev 423/26
Page 24
Package and packing informationVN610SP
5.3 PowerSO-10 packing information
Figure 26. PowerSO-10 suggested
pad layout
Figure 27. PowerSO-10 tube shipment
(no suffix)
14.6 - 14.9
10.8 - 11
6.30
1
2
3
9.5
4
5
0.67 - 0.73
10
0.54 - 0. 6
9
8
7
1.27
6
C
A
All dimensions are in mm.
Casablanca50100053210.4 16.4 0.8
B
Base Q.ty Bulk Q.ty Tube length (± 0.5) AB C (± 0.1)
Muar5010005324.9 17.2 0.8
Figure 28. PowerSO-10 tape and reel shipment (suffix “TR”)
Reel dimensions
Base Q.ty600
Bulk Q.ty600
A (max)330
B (min)1.5
C (± 0.2)13
F20.2
G (+ 2 / -0)24.4
N (min)60
T (max)30.4
MUARCASABLANCA
A
B
C
Tape dimensions
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
Current and voltage convention update (page 2).
Configuration diagram (top view) and suggested connections for
unused and n.c. pins insertion (page 2).
29-Jan-20082
15-Dec-20083
29-Jul-20104
6 cm2 Cu condition insertion in thermal data table (page 3).
Protections note insertion (page 4).
- output diode section update (page 5).
V
CC
Revision history table insertion (page 17).
Disclaimers update (page 18).
Document reformatted and restructured.
Added contents, list of tables and figures.
®
Added ECOPACK
packages information.
Updated Figure 24: Thermal fitting model of a single channel in
PowerSO-10
Doc ID 6236 Rev 425/26
Page 26
VN610SP
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