power limitation
– Very low standby current
– 3.0 V CMOS compatible inputs
– Optimized electromagnetic emissions
– Very low electromagnetic susceptibility
– In compliance with the 2002/95/EC
European directive
■ Diagnostic functions
– Proportional load current sense
– High current sense precision for wide
current range
– Current sense disable
– Off-state open-load detection
– Output short to V
– Undervoltage shutdown
– Overvoltage clamp
– Load current limitation
– Self limiting of fast thermal transients
– Protection against loss of ground and loss
■ All types of resistive, inductive and capacitive
loads
■ Suitable as LED driver
Description
The VN5E016AH-E is a single channel high-side
driver manufactured in the ST proprietary
VIPower™ M0-5 technology and housed in the
tiny HPak package. The VN5E016AH-E is
designed to drive 12 V automotive grounded
loads delivering protection, diagnostics and easy
3 V and 5 V CMOS compatible interface with any
microcontroller.
The device integrates advanced protective
functions such as load current limitation, inrush
and overload active management by power
limitation, overtemperature shut-off with auto
restart and overvoltage active clamp.
A dedicated analog current sense pin is
associated with every output channel to provide
enhanced diagnostic functions. These functions
include fast detection of overload and short-circuit
to ground through power limitation indication,
overtemperature indication, short-circuit to V
diagnosis and ON-state and OFF-state open-load
detection.
The current sensing and diagnostic feedback of
the whole device can be disabled by pulling the
CS_DIS pin high to allow sharing of the external
sense resistor with other similar devices
Voltage controlled input pin with hysteresis, CMOS compatible. Controls output
switch state
Analog current sense pin, delivers a current proportional to the load current
CS_DISActive high CMOS compatible pin, to disable the current sense pin
1. Pins 1 and 7 must be externally tied together.
Doc ID 15994 Rev 45/37
Page 6
Block diagram and pin descriptionVN5E016AH-E
Figure 2.Configuration diagram (top view) not in scale
1234 567
IN
GND
OUT
Table 2.Suggested connections for unused and not connected pins
Vcc
CS CS_DIS
OUT
Connection / pinCurrent senseOutputInputCS_DIS
FloatingNot allowedXXX
To ground
Through 1 kΩ
resistor
Through 22 kΩ
resistor
Through 10 kΩ
resistor
Through 10 kΩ
resistor
6/37Doc ID 15994 Rev 4
Page 7
VN5E016AH-EElectrical specifications
2 Electrical specifications
Figure 3.Current and voltage conventions
I
S
V
CC
I
OUT
V
CSD
I
CSD
CS_DIS
OUTPUT
I
IN
V
IN
INPUT
GND
2.1 Absolute maximum ratings
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality document.
Table 3.Absolute maximum ratings
SymbolParameterValueUnit
V
-V
I
GND
I
OUT
-I
I
CSD
V
CSENSE
E
DC supply voltage 41V
CC
Reverse DC supply voltage0.3V
CC
DC reverse ground pin current200mA
DC output current
Reverse DC output current 20A
OUT
DC input current -1 to 10mA
I
IN
DC current sense disable input current -1 to 10mA
Current sense maximum voltage (VCC>0)
Maximum switching energy (single pulse)
MAX
(L = 1.55 mH; R
= I
limL
(Typ.))
I
OUT
= 0Ω; V
L
= 13.5V; T
bat
CURRENT
S
ENSE
I
GND
= 150ºC;
jstart
I
SENSE
V
SENSE
V
OUT
Internally
limited
V
-41
CC
+V
CC
350mJ
V
CC
A
V
V
Doc ID 15994 Rev 47/37
Page 8
Electrical specificationsVN5E016AH-E
Table 3.Absolute maximum ratings (continued)
SymbolParameterValueUnit
Electrostatic discharge (human body model: R = 1.5KΩ;
C = 100pF)
V
V
ESD
ESD
T
T
– Input
– Current sense
–CS_DIS
– Output
–V
CC
Charge device model (CDM-AEC-Q100-011)750V
Junction operating temperature-40 to 150°C
j
Storage temperature-55 to 150 °C
stg
4000
2000
4000
5000
5000
V
V
V
V
V
2.2 Thermal data
Table 4.Thermal data
SymbolParameterMax. valueUnit
R
thj-case
R
thj-amb
Thermal resistance junction-case 0.63°C/W
Thermal resistance junction-ambient 69.3°C/W
8/37Doc ID 15994 Rev 4
Page 9
VN5E016AH-EElectrical specifications
2.3 Electrical characteristics
Values specified in this section are for 8 V < VCC<28V, -40°C< Tj < 150 °C, unless
otherwise specified.
Table 5.Power section
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
V
V
USDhyst
R
V
clamp
I
L(off1)
Table 6.Switching (VCC=13V, Tj = 25 °C)
Operating supply voltage4.51328V
CC
Undervoltage shutdown-3.54.5V
USD
Undervoltage shutdown
hysteresis
I
= 5 A; Tj= 25 °C--16
OUT
On-state resistance
ON
Output - VCC diode
V
F
voltage
= 5 A; Tj= 150 °C--32
OUT
I
= 5 A; VCC= 5 V; Tj= 25 °C--20
OUT
= 5A; Tj = 150°C--0.7V
-I
OUT
Clamp VoltageIcc = 20 mA; I
I
Supply current
S
Off-state output current
Off-state; V
V
On-state; V
I
VIN = V
T
V
T
= V
IN
OUT
= 25°C
j
= V
IN
= 125°C
j
CC
= V
OUT
CC
= 0A
= 0V; VCC = 13V;
OUT
= 0V; VCC = 13V;
OUT
-0.5 - V
= 0A414652V
OUT
= 13V; Tj = 25°C;
= 0V
SENSE
= 13V; VIN = 5V;
-2 5
-1.53mA
00.01 3
0- 5
mΩI
µA
µA
SymbolParameter Test conditionsMin.Typ.Max.Unit
(dV
(dV
t
d(on)
t
d(off)
OUT
OUT
Turn-on delay time RL = 2.6 Ω (see Figure 6)-15- µs
Turn-off delay time RL = 2.6 Ω (see Figure 6)-45- µs
/dt)onTurn-on voltage slope RL = 2.6 Ω -0.2 -V/µs
/dt)
Turn-off voltage slope RL = 2.6 Ω -0.2 -V/µs
off
Switching energy
W
ON
losses at turn-on
)
(t
won
R
= 2.6 Ω (see Figure 6)-1.4- mJ
L
Switching energy
W
OFF
losses at turn-off
)
(t
woff
R
= 2.6 Ω (see Figure 6)-0.8- mJ
L
Doc ID 15994 Rev 49/37
Page 10
Electrical specificationsVN5E016AH-E
Table 7.Logic Inputs
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
Input low level voltage--0.9V
IL
Low level input currentVIN = 0.9V1--µA
I
IL
V
V
I(hyst)
V
V
CSDL
I
CSDL
V
CSDH
I
CSDH
V
CSD(hyst)
V
CSCL
Input high level voltage2.1--V
IH
I
High level input currentVIN = 2.1V--10µA
IH
Input hysteresis voltage0.25--V
I
= 1mA5.5-7
Input clamp voltage
ICL
IN
= -1mA--0.7-
I
IN
CS_DIS low level voltage--0.9V
Low level CS_DIS currentV
= 0.9V1--µA
CSD
CS_DIS high level voltage2.1--V
High level CS_DIS currentV
= 2.1V--10µA
CSD
CS_DIS hysteresis voltage0.25--V
I
= 1mA5.5-7
CS_DIS clamp voltage
CSD
= -1mA--0.7-
I
CSD
V
V
Table 8.Protection and diagnostics
(1)
SymbolParameterTest conditionsMin.Typ.Max.Unit
I
limH
I
limL
T
TSD
T
R
T
RS
T
HYST
V
DEMAG
V
ON
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles
Short circuit current
Short circuit current
during thermal cycling
Shutdown temperature150175200°C
Reset temperature
Thermal reset of status135--°C
Thermal hysteresis
(T
TSD-TR
)
Turn-off output voltage
clamp
Output voltage drop
limitation
VCC = 13V
5V<V
V
I
OUT
<28V
CC
= 13V; TR<Tj<T
CC
= 2A; VIN = 0; L =
6mH
I
= 0.5A;
OUT
= -40°C...150°C
T
j
TSD
5473108
108
-18 - A
TRS + 1
TRS + 5
-°C
-7 -°C
V
-41
V
-46
V
CC
CC
CC
-52
-25 -mV
A
A
V
10/37Doc ID 15994 Rev 4
Page 11
VN5E016AH-EElectrical specifications
Table 9.Current sense (8 V < VCC<18V)
SymbolParameterTest conditionsMin.Typ.Max.Unit
I
K
K
dK1/K
K
dK2/K
K
dK3/K
I
0
1
2
3
OUT/ISENSE
I
OUT/ISENSE
(1)
Current sense ratio drift
1
I
OUT/ISENSE
(1)
Current sense ratio drift
2
I
OUT/ISENSE
(1)
Current sense ratio drift
3
= 0.25A; V
OUT
Tj = -40°C...150°C
I
= 5A; V
OUT
SENSE
Tj = -40°C...150°C
= 25°C...150°C
T
j
I
= 5A; V
OUT
V
CSD
= -40 °C to 150 °C
T
J
I
= 10A; V
OUT
= -40°C...150°C
T
j
SENSE
= 0V;
SENSE
Tj = 25°C...150°C
I
= 10 A; V
OUT
= 0V;
V
CSD
TJ = -40 °C to 150 °C
I
= 25A; V
OUT
SENSE
Tj = -40°C...150°C
= 25°C...150°C
T
j
I
= 25 A; V
OUT
= 0V;
V
CSD
= -40 °C to 150 °C
T
J
= 0A; V
I
OUT
V
CSD
SENSE
= 5V; VIN = 0V;
Tj = -40°C...150°C
SENSE
SENSE
SENSE
= 0.5V
= 0.5V
= 0.5V;
= 4V
= 4 V;
= 4V
= 4 V;
= 0V;
2950 6490 9400-
4540
5130
6230
4540
5130
5720
- 11-+ 11%
4640
4980
5570
4640
4980
5300
- 8-+ 8%
4650
4860
5150
4600
4860
5090
- 4-+ 4%
0-1
-
-
-
I
SENSE0
I
OL
V
SENSE
V
SENSEH
I
SENSEH
t
DSENSE1H
Analog sense leakage
current
Openload ON-state
current detection
threshold
Max analog sense
output voltage
Analog sense output
(2)
voltage in fault condition
Analog sense output
(2)
current in fault condition
Delay response time
from falling edge of
CS_DIS pin
I
= 0A; V
OUT
V
= 0V; VIN = 5V;
CSD
= -40°C...150°C
T
j
I
= 2A; V
OUT
= 5V; VIN = 5V;
V
CSD
= -40°C...150°C
T
j
VIN = 5V;
= 5 µA
I
SENSE
I
= 18A; R
OUT
V
= 13V; R
CC
= 13V; V
V
CC
<4V, 1.5A<Iout<25A
V
SENSE
= 90% of I
I
SENSE
= 0V;
SENSE
0-2
= 0V;
SENSE
--1
5-70mA
= 3.9KΩ 5--V
SENSE
= 3.9KΩ-8-V
SENSE
= 5V-9-mA
SENSE
SENSE max
-50100µs
µA
(see Figure 4.)
Doc ID 15994 Rev 411/37
Page 12
Electrical specificationsVN5E016AH-E
Table 9.Current sense (8 V < VCC< 18 V) (continued)
SymbolParameterTest conditionsMin.Typ.Max.Unit
<4V, 1.5A<Iout<25A
Delay response time
t
DSENSE1L
from rising edge of
CS_DIS pin
Delay response time
t
DSENSE2H
from rising edge of
INPUT pin
Delay response time
Δ
t
DSENSE2H
between rising edge of
output current and rising
edge of current sense
Delay response time
t
DSENSE2L
from falling edge of
INPUT pin
1. Parameter guaranteed by design, it is not tested.
2. Fault condition includes: power limitation, overtemperature and open-load OFF-state detection.
Table 10.Open-load detection (8 V < VCC<18V)
V
SENSE
= 10% of I
I
SENSE
(see Figure 4)
<4V, 1.5A<Iout<25A
V
SENSE
I
= 90% of I
SENSE
(see Figure 4)
V
I
SENSE
I
OUT
I
OUTMAX
V
I
<4V,
SENSE
= 90% of I
= 90% of I
= 3A (see Figure 7)
<4V, 1.5A<Iout<25A
SENSE
= 10% of I
SENSE
(see Figure 4)
SENSE max
SENSE max
SENSEMAX,
OUTMAX
SENSE max
-520µs
-270600µs
--280µs
-100250µs
SymbolParameterTest conditionsMin.Typ.Max. Unit
Open-load OFF-state
V
voltage detection
OL
= 0V2
V
IN
threshold
See
Figure 5
4V
Output short circuit to
t
DSTKON
detection delay at
V
CC
See Figure 5180-1200µs
turn Off
I
L(off2)r
I
L(off2)f
Off-state output current
at V
OUT
= 4V
Off-state output current
at V
OUT
= 2V
= 0V; V
V
IN
rising from 0V to 4V
V
OUT
= 0V; V
V
IN
falling from VCC to 2V
V
OUT
SENSE
SENSE
= 0V
= V
SENSEH
-120-0µA
;
-50-90µA
Delay response from
= 4 V; VIN = 0V
td_vol
output rising edge to
SENSE
rising edge in
V
open-load
V
OUT
V
SENSE
= 90% of V
SENSEH
--20µs
12/37Doc ID 15994 Rev 4
Page 13
VN5E016AH-EElectrical specifications
Figure 4.Current sense delay characteristics
INPUT
CS_DIS
LOAD CURRENT
SENSE CURRENT
t
DSENSE2H
t
DSENSE1L
t
DSENSE1H
t
DSENSE2L
Figure 5.Open-load Off-state delay timing
OUTPUT STUCK TO V
V
IN
V
CS
Figure 6.Switching characteristics
V
OUT
dV
OUT
INPUT
t
Won
80%
/dt
(on)
t
r
t
d(on)
10%
t
d(off)
t
Woff
90%
t
f
CC
V
OUT
V
t
DSTKON
dV
> V
SENSEH
/dt
OUT
OL
(off)
t
t
Doc ID 15994 Rev 413/37
Page 14
Electrical specificationsVN5E016AH-E
Figure 7.Delay response time between rising edge of output current and rising
edge of current sense (CS enabled)
V
IN
Δt
DSENSE2H
t
I
OUT
I
SENSE
90% I
OUTMAX
I
OUTMAX
I
SENSEMAX
t
90% I
Figure 8.Output voltage drop limitation
Vcc-Vout
Tj=150oC
Von
Von/Ron(T)
SENSEMAX
t
Tj=25oC
Tj=-40oC
Iout
14/37Doc ID 15994 Rev 4
Page 15
VN5E016AH-EElectrical specifications
Figure 9.I
I
/ I
out
sense
6400
6200
6000
5800
5600
5400
max Tj = 25 °C to 150 °C
5200
5000
4800
4600
4400
4200
4000
5 10152025
OUT/ISENSE
max Tj = -40 °C to 150 °C
min Tj = 25 °C to 150 °C
vs I
OUT
typical value
min Tj = -40 °C to 150 °C
I
(A)
OUT
Figure 10. Maximum current sense ratio drift vs load current
dk/k(%)
20
15
10
5
0
-5
-10
-15
-20
5 10152025
1. Parameter guaranteed by design; it is not tested.
I
OUT
(A)
(1)
Doc ID 15994 Rev 415/37
Page 16
Electrical specificationsVN5E016AH-E
Table 11.Truth table
ConditionsInputOutputSense (V
Normal operation
CSD
L
H
L
H
0
Nominal
=0V)
(1)
Overtemperature
Undervoltage
Overload
Short circuit to GND
(power limitation)
Open-load OFF-state
(with external pull-up)
Short circuit to V
CC
(external pull-up
disconnected)
Negative output voltage
clamp
1. If the V
and external circuit.
is high, the SENSE output is at a high impedance, its potential depends on leakage currents
CAll functions of the device are performed as designed after exposure to disturbance.
E
One or more functions of the device are not performed as designed after exposure to
disturbance and cannot be returned to proper operation without replacing the device.
Doc ID 15994 Rev 417/37
Page 18
Electrical specificationsVN5E016AH-E
2.4 Waveforms
Figure 11. Normal operation
Normal operation
INPUT
Nominal loadNominal load
I
OUT
V
SENSE
V
CS_DIS
Figure 12. Overload or Short to GND
Overload or Short to GND
INPUT
I
OUT
V
SENSE
V
CS_DIS
I
LimH
>
Power Limitation
I
LimL
Thermal cycling
>
18/37Doc ID 15994 Rev 4
Page 19
VN5E016AH-EElectrical specifications
Figure 13. Intermittent overload
Overload or Short to GND
INPUT
I
>
LimH
I
OUT
V
SENSE
V
CS_DIS
Power Limitation
I
LimL
Thermal cycling
>
Figure 14. OFF-state open-load with external circuitry
OFF-State Open Load
with external circutry
INPUT
V
OUT
I
OUT
V
SENSE
V
CS_DIS
V
> V
OUT
OL
V
OL
t
DSTK(on)
V
SENSEH
>
Doc ID 15994 Rev 419/37
Page 20
Electrical specificationsVN5E016AH-E
Figure 15. Short to V
V
OUT
I
OUT
V
CS_DIS
CC
Short to V
Resistive
V
OL
t
DSTK(on)
CC
Short to V
CC
Hard
Short to V
V
> V
OUT
t
DSTK(on)
CC
OL
Figure 16. TJ evolution in overload or short to GND
TJ evolution in
Overload or Short to GND
INPUT
T
I
OUT
J
Self-limitation of fast thermal transients
T
J_START
Power Limitation
I
>
LimH
T
TSD
T
R
< I
T
HYST
LimL
20/37Doc ID 15994 Rev 4
Page 21
VN5E016AH-EElectrical specifications
2.5 Electrical characteristics curves
Figure 17. Off-state output currentFigure 18. High level input current
Figure 21. Input high levelFigure 22. Input hysteresis voltage
Vih [V]
4
3.5
3
2.5
2
1.5
1
0.5
0
-50-250255075100125150175
Tc [°C]
Vihyst [V]
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
-50-250255075100125150175
Tc [°C]
Doc ID 15994 Rev 421/37
Page 22
Electrical specificationsVN5E016AH-E
V
Figure 23.On-state resistance vs T
Ron [mOhm]
100
90
80
70
60
50
40
30
20
10
0
-50-250255075100125150175
Iout= 5A
Vcc= 13V
Tc [°C]
case
Figure 24. On-state resistance vs V
Ron [mOhm]
40
30
20
10
0
0510152025303540
Vcc [V]
Figure 25. Undervoltage shutdownFigure 26. Turn-on voltage slope
Vusd [V]
16
14
12
10
8
6
4
2
0
-50-250255075100125150175
Tc [°C]
(dVout/dt)On [V/ms ]
1000
900
800
700
600
500
400
300
200
100
0
-50-250255075100125150175
Vcc= 13V
Rl= 2. 6Ω
Tc [°C]
CC
Tc= 150°C
Tc= 125°C
Tc= 25°C
Tc= -40°C
Figure 27. I
Ilimh [A]
100
90
80
70
60
50
40
-50-250255075100125150175
LIMH
cc= 13V
vs T
case
Tc [°C]
Figure 28. Turn-off voltage slope
(dVout/dt)Off [V/ms]
1000
900
800
700
600
500
400
300
200
100
0
-50-250255075100125150175
22/37Doc ID 15994 Rev 4
Vcc= 13V
Rl= 2. 6 Ω
Tc [°C]
Page 23
VN5E016AH-EElectrical specifications
Figure 29. CS_DIS high level voltageFigure 30. CS_DIS clamp voltage
Vcsdh [V]
4
3.5
3
2.5
2
1.5
1
0.5
0
-50-250255075100125150175
Tc [°C]
Vcsdcl [V]
10
9
8
7
6
5
4
3
2
1
0
-50-250255075100125150175
Iin= 1mA
Tc [°C]
Figure 31. CS_DIS low level voltage
Vcsdl [V]
4
3.5
3
2.5
2
1.5
1
0.5
0
-50-250255075100125150175
Tc [°C]
Doc ID 15994 Rev 423/37
Page 24
Application informationVN5E016AH-E
3 Application information
Figure 32. Application schematic
+5V
V
CC
R
prot
CS_DIS
D
ld
μC
R
prot
R
prot
C
ext
IINPUT
CURRENT SENSE
R
SENSE
V
GND
GND
R
GND
D
OUTPUT
GND
3.1 GND protection network against reverse battery
3.1.1 Solution 1: resistor in the ground line (R
This can be used with any type of load.
The following is an indication on how to dimension the R
1.R
2. R
where -I
maximum rating section of the device datasheet.
≤ 600mV / (I
GND
≥ (−VCC) / (-I
GND
is the DC reverse ground pin current and can be found in the absolute
GND
S(on)max
GND
).
)
GND
only)
resistor.
GND
Power dissipation in R
(when VCC<0: during reverse battery situations) is:
GND
Equation 1
= (-VCC)2/R
P
D
GND
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I
maximum on-state currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground then the
R
will produce a shift (I
GND
S(on)max
24/37Doc ID 15994 Rev 4
* R
) in the input thresholds and the status output
GND
S(on)max
becomes the sum of the
Page 25
VN5E016AH-EApplication information
values. This shift will vary depending on how many devices are ON in the case of several
high side drivers sharing the same R
GND
.
If the calculated power dissipation leads to a large resistor or several devices have to share
the same resistor then ST suggests to utilize Solution 2 (see below).
3.1.2 Solution 2: a diode (D
A resistor (R
=1kΩ) should be inserted in parallel to D
GND
) in the ground line
GND
inductive load.
This small signal diode can be safely shared amongst several different HSDs. Also in this
case, the presence of the ground network will produce a shift (≈600mV) in the input
threshold and in the status output values if the microprocessor ground is not common to the
device ground. This shift will not vary if more than one HSD shares the same diode/resistor
network.
3.2 Load dump protection
Dld is necessary (voltage transient suppressor) if the load dump peak voltage exceeds the
V
max DC rating. The same applies if the device is subject to transients on the VCC line
CC
that are greater than the ones shown in the ISO T/R 7637/1 table.
3.3 MCU I/Os protection
If a ground protection network is used and negative transients are present on the VCC line,
the control pins will be pulled negative. ST suggests to insert a resistor (R
prevent the μC I/Os pins to latch-up.
The value of these resistors is a compromise between the leakage current of
current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of
I/Os.
if the device drives an
GND
prot
) in line to
µC and the
µC
Equation 2
V
Calculation example:
For V
CCpeak
5kΩ ≤ R
= -100V; I
≤ 65kΩ.
prot
latchup
Recommended values: R
CCpeak/Ilatchup
≤ R
≥ 20mA; V
=10kΩ, C
prot
Doc ID 15994 Rev 425/37
prot
OHμC
EXT
≤ (V
OHμC-VIH-VGND
≥ 4.5V
= 10nF.
) / I
IHmax
Page 26
Application informationVN5E016AH-E
3.4 Current sense and diagnostic
The current sense pin performs a double function (see Figure 33: Current sense and
diagnostic):
●Current mirror of the load current in normal operation, delivering a current
proportional to the load one according to a know ratio K
The current I
external resistor R
minimum (see parameter V
can be easily converted to a voltage V
SENSE
. Linearity between I
SENSE
SENSE
in Table 9: Current sense (8 V < VCC<18V)). The
OUT
and V
current sense accuracy depends on the output current (refer to current sense electrical
characteristics Table 9: Current sense (8 V < V
●Diagnostic flag in fault conditions, delivering a fixed voltage V
maximum current I
SENSEH
in case of the following fault conditions (refer to Tr ut h t a bl e):
<18V)).
CC
–Power limitation activation
–Overtemperature
–Short to V
in OFF-state
CC
–Open-load in OFF-state with additional external components.
A logic level high on CS_DIS pin sets at the same time all the current sense pins of the
device in a high impedance state, thus disabling the current monitoring and diagnostic
detection. This feature allows multiplexing of the microcontroller analog inputs by sharing of
sense resistance and ADC line among different devices.
.
X
SENSE
by means of an
SENSE
is ensured up to 5V
SENSEH
up to a
Figure 33. Current sense and diagnostic
41V
Overtemperature
Pwr_Lim
SENSEH
CS_DIS
To uC ADC
I
OUT/KX
R
PROT
R
SENSE
I
SENSEH
CURRENT
SENSEn
V
SENSE
V
OL OFF
INPUTn
Main MOSn
+
-
GND
V
PU_CMD
R
I
Loff2r
I
Loff2f
R
PU
PU
Load
PD
V
BAT
V
CC
V
OL
OUTn
26/37Doc ID 15994 Rev 4
Page 27
VN5E016AH-EApplication information
3.4.1 Short to VCC and OFF-state open-load detection
Short to V
A short circuit between V
V
SENSEH
during the on-state depending on the nature of the short circuit.
OFF-state open-load with external circuitry
CC
and output is indicated by the relevant current sense pin set to
CC
during the device off-state. Small or no current is delivered by the current sense
Detection of an open-load in off mode requires an external pull-up resistor R
the output to a positive supply voltage V
It is preferable V
to be switched off during the module standby mode in order to avoid the
PU
PU
.
connecting
PU
overall standby current consumption to increase in normal conditions, i.e. when load is
connected.
An external pull down resistor R
connected between output and GND is mandatory to
PD
avoid misdetection in case of floating outputs in off-state (see Figure 33: Current sense and
diagnostic).
R
must be selected in order to ensure V
PD
OUT < VOLmin
unless pulled up by the external
circuitry:
Equation 3
OLfoffLPD
min)2(
R
≤ 22 KΩ is recommended.
PD
OUT
−
OFFupPull
_
VVIRV
2
=<⋅=
For proper open-load detection in off-state, the external pull-up resistor must be selected
according to the following formula:
Equation 4
V
OUT
For the values of V
(8 V < V
CC
<18V).
=
ONupPull
_
−
OLmin,VOLmax, IL(off2)r
Doc ID 15994 Rev 427/37
and I
IRRVR
⋅⋅−⋅
RR
+
PDPU
see Table 10: Open-load detection
L(off2)f
roffLPDPUPUPD
)2(
OL
max
VV
4
=>
Page 28
Application informationVN5E016AH-E
3.5 Maximum demagnetization energy (VCC=13.5V)
Figure 34. Maximum turn off current versus inductance
100
A
B
C
10
I (A)
1
0,1110100L (mH)
(1)
A: T
B: T
C: T
VIN, I
= 150°C single pulse
jstart
= 100°C repetitive pulse
jstart
= 125°C repetitive pulse
jstart
L
DemagnetizationDemagnetizationDemagnetization
1. Values are generated with R
In case of repetitive pulses, T
the temperature specified above for curves A and B.
=0Ω.
L
(at beginning of each demagnetization) of every pulse must not exceed
jstart
t
28/37Doc ID 15994 Rev 4
Page 29
VN5E016AH-EPackage and PC board thermal data
4 Package and PC board thermal data
4.1 HPak thermal data
Figure 35. PC board
1. Layout condition of R
thickness = 1.8 mm, Cu thickness = 70 µm, Copper areas: from minimum pad lay-out to 8 cm2).
Figure 36. R
thj-amb
(1)
and Zth measurements (PCB FR4 area = 58 mm x 58 mm, PCB
th
Vs. PCB copper area in open box free air condition
RTHjamb
75
70
65
60
55
RTHjamb
50
45
40
35
30
0246810
Doc ID 15994 Rev 429/37
Page 30
Package and PC board thermal dataVN5E016AH-E
Figure 37. HPak thermal impedance junction ambient single pulse
Equation 5: pulse calculation formula
where δ = t
Z
/T
P
THδ
RTHδ Z
THtp
1 δ–()+⋅=
Figure 38. Thermal fitting model of a single channel HSD in HPak
(1)
1. The fitting model is a simplified thermal tool and is valid for transient evolutions where the embedded
protections (power limitation or thermal cycling during thermal shutdown) are not triggered.
30/37Doc ID 15994 Rev 4
Page 31
VN5E016AH-EPackage and PC board thermal data
Table 15.Thermal parameter
Area/island (cm2)Footprint48
R1 (°C/W)0.1--
R2 (°C/W)0.2--
R3 (°C/W)2--
R4 (°C/W)8--
R5 (°C/W)282212
R6 (°C/W)312516
C1 (W.s/°C)0.0001--
C2 (W.s/°C)0.002--
C3 (W.s/°C)0.05--
C4 (W.s/°C)0.4--
C5 (W.s/°C)0.81.43
C6 (W.s/°C)369
Doc ID 15994 Rev 431/37
Page 32
Package and packing informationVN5E016AH-E
5 Package and packing information
5.1 ECOPACK
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com
ECOPACK
Figure 39. Package dimension
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
®
.
32/37Doc ID 15994 Rev 4
Page 33
VN5E016AH-EPackage and packing information
Table 16.Package mechanical data
Data book mm
Ref. dim
Nom.Min.Max.
A-2.202.40
A1-0.901.10
A2-0.030.23
b-0.450.60
b4-5.205.40
c-0.450.60
c2-0.480.60
D-6.006.20
D15.10--
E-6.406.60
E15.20--
e0.85- -
e1-1.601.80
e2-3.303.50
e3-5.005.20
H-9.3510.10
L-1-
(L1)2.80--
L20.80--
L4-0.601.00
R0.20 - -
V2-0°8°
Doc ID 15994 Rev 433/37
Page 34
Package and packing informationVN5E016AH-E
5.2 Packing information
The devices can be packed in tube or tape and reel shipments (see Table 17: Device
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