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查询VN10K供应商
Ordering Information
Standard Commercial Devices
VN10K
N-Channel Enhancement-Mode
Vertical DMOS FETs
BV
/R
DSS
BV
DGS
60V 5.0Ω 0.75A VN10KN3
DS(ON)
(max) (min) TO-92
I
D(ON)
Order Number / Package
Features
❏ Free from secondary breakdown
❏ Low power drive requirement
❏ Ease of paralleling
❏ Low C
❏ Excellent thermal stability
❏ Integral Source-Drain diode
❏ High input impedance and high gain
❏ Complementary N- and P-channel devices
and fast switching speeds
ISS
Applications
❏ Motor controls
❏ Converters
❏ Amplifiers
❏ Switches
❏ Power supply circuits
❏ Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Option
Absolute Maximum Ratings
Drain-to-Source Voltage BV
Drain-to-Gate Voltage BV
Gate-to-Source Voltage ± 30V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
Distance of 1.6 mm from case for 10 seconds.
*
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
DSS
DGS
S G D
TO-92
Note: See Package Outline section for dimensions.
1
Page 2
Thermal Characteristics
Package I
(continuous)
D
TO-92 0.31A 1.0A 1.0W 125 170 0.31A 1.0A
Notes:
1. I
(continuous) is limited by max rated Tj.
D
2. VN0106N3 can be used if an I
(continuous) of 0.5 is needed.
D
1,2
ID (pulsed) Power Dissipation
@ TC = 25°C °C/W °C/W
θ
jc
θ
ja
I
DR
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol Parameter Min Typ Max Unit Conditions
BV
DSS
V
GS(th)
∆V
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
∆R
DS(th)
G
FS
C
ISS
C
OSS
C
RSS
t
(ON)
t
(OFF)
V
SD
t
rr
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Drain-to-Source 60 V VGS = 0V, ID = 100µA
Breakdown Voltage
Gate Threshold Voltage 0.8 2.5 V V
Change in V
with Temperature -3.8 mV/°CVGS = VDS, ID = 1mA
GS(th)
GS
= V
, ID = 1mA
DS
Gate Body Leakage 100 nA VGS = 15V, VDS = 0V
Zero Gate Voltage Drain Current 10 µAVGS = 0V, VDS = 45V
500 µAV
ON-State Drain Current 0.75 A V
Static Drain-to-Source
ON-State Resistance
Change in R
with Temperature 0.7 %/°CVGS = 10V, ID = 500mA,
DS(th)
Forward Transconductance 100 m VDS = 10V, ID = 500mA
7.5 Ω V
5.0 Ω V
Ω
= 0V, VDS = 45V, TA 125°C
GS
= 10V, VDS = 10V
GS
= 5V, ID = 0.2A
GS
= 10V, ID = 500mA
GS
Input Capacitance 48 60
Common Source Output Capacitance 16 25 pF
VDS = 25V, VGS = 0V
f = 1 MHz
Reverse Transfer Capacitance 2 5
Turn-ON Time 10
Turn-OFF Time 10
ns
VDD = 15V, ID = 0.6A,
= 25Ω
R
GEN
Diode Forward Voltage Drop 0.8 V VGS = 0V, ISD = 0.5A
Reverse Recovery Time 160 ns VGS = 0V, ISD = 0.5A
VN10K
I
DRM
Switching Waveforms and Test Circuit
INPUT
OUTPUT
10V
0V
V
0V
10%
t
(ON)
t
d(ON)
DD
10%
90%
t
r
90%
t
d(OFF)
t
(OFF)
t
F
90%
10%
2
PULSE
GENERATOR
R
gen
INPUT
V
DD
R
L
OUTPUT
D.U.T.
Page 3
Typical Performance Curves
VN10K
Output Characteristics
1.0
0.8
0.6
(amperes)
0.4
D
I
0.2
0
0102030 5040
V
DS
Transconductance vs. Drain Current
250
200
V
GS
(volts)
=10V
6V
5V
4V
3V
2V
Saturation Characteristics
1.0
V
=10V
GS
0.8
0.6
(amperes)
0.4
D
I
0.2
0
0246 108
8V
9V
V
DS
Power Dissipation vs. Case Temperature
2
7V
6V
5V
4V
3V
2V
(volts)
Ω
150
(m )
FS
G
100
50
0
10
1.0
(amperes)
D
I
0.1
V
= 10V
DS
300µs, 2%
Duty Cycle
Pulse Test
0 1000200 400 600 800
ID (mA)
Maximum Rated Safe Operating Area
TC = 25°C
TO-92 (DC)
TO-92
1
(watts)
D
P
0
0 15010050
10
5
(volts)
Output Voltage
0
15
10
T
(°C)
C
Switching Waveform
1257525
0.01
1 100010010
5
(volts)
Input Voltage
0
05010
V
(volts)
DS
20
t – Time(ns)
30
40
3
Page 4
Typical Performance Curves
BV
Variation with Temperature
DSS
1.1
On-Resistance vs. Gate-to-Source Voltage
100
V
DS
= 0.1V
VN10K
1.0
(normalized)
DSS
BV
0.9
-50 0 50 100 150
Tj (°C)
Transfer Characteristics
1.0
VDS = 10V
300µs, 2%
DUTY CYCLE
0.8
PULSE TEST
0.6
(amperes)
0.4
D
I
0.2
(ohms)
10
DS(ON)
R
1
1 10010
Output Conductance vs Drain Current
1.0
VDS = 25V
80µs, 1%
DUTY CYCLE
PULSE TEST
0.1
(mhos)
FS
G
(Volts)
V
GS
REDUCTION
DUE TO
HEATING
0
0246810
V
(volts)
GS
Capacitance vs. Drain-to-Source Voltage
50
C
ISS
40
30
20
C (picofarads)
10
0
010203040
C
OSS
C
RSS
50
VDS (volts)
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
4
0.01
0.01 0.1 1.0
I
(amperes)
D
Transconductance vs Gate-Source Voltage
250
V
= 10V
DS
3000µs, 2%
DUTY CYCLE
200
PULSE TEST
Ω
150
Gfs (m )
100
50
0
0246810
VGS (volts)
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
11/12/01
www.supertex.com
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