Page 1
HIGH SIDE SMARTPOWER SOLIDSTATE RELAY
TYPE V
DSS
VN05HSP 45 V 0.18 Ω 12 A 36 V
■ OUTPUT CURRENT (CONTINUOUS):
6A @ Tc=25oC
■ 5V LOGIC LEVEL COMPATIBLE INPUT
■ THERMAL SHUT-DOWN
■ UNDER VOLTAGE SHUT-DOWN
■ OPEN DRAIN DIAGNOSTIC OUTPUT
■ VERY LOW STAND-BY POWER
DISSIPATION
DESCRIPTION
The VN05HSP is a monolithic devices made
using SGS-THOMSON Vertical Intelligent Power
Technology, intended for driving resistive or
inductiveloads with one side grounded.
Built-in thermal shut-down protects the chip from
over temperature and short circuit.
The input control is 5V logic level compatible.
The open drain diagnostic output indicates open
circuit (no load) and over temperature status.
R
DS(on
)I
OUT
V
CC
VN05HSP
TARGET DATA
10
1
PowerSO-10
BLOCK DIAGRAM
May 1997
1/8
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VN05HSP
ABSOLUTE MAXIMUM RATING
Symbol Parameter Value Unit
V
(BR)DSS
I
OUT
I
I
V
V
-V
I
STAT
V
ESD
P
T
T
ERB Power Mos Avalanche Energy 350 mJ
CONNECTIONDIAGRAMS
Drain-Source Breakdown Voltage Internally Clamped V
Output Current (cont.) 12 A
Reverse OutputCurrent -12 A
R
Input C urrent ±10 mA
IN
Supply Voltage(continuous) 40 V
CC
Supply Voltage(pulsed) 60 V
CC
Reverse Supply Voltage -4 V
CC
Status Current ±10 mA
Electrostatic Discharge (1.5 kΩ, 100 pF)
Powe r D issipa t ion at Tc≤ 25oC
tot
Junction OperatingTemperature -40 to 150
j
Storage Temperature -55 to 150
stg
2000 V
52 W
o
C
o
C
CURRENT AND VOLTAGE CONVENTIONS
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VN05HSP
THERMALDATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
2.4
62.5
ELECTRICAL CHARACTERISTICS (VCC= 9 to 36 V; -40 ≤ Tj≤ 125oC unless otherwise specified)
POWER
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
R
I
Clamp
Supply Voltage see note1 5.5 13 36 V
CC
On State Resistance I
on
Supply Current
S
=6A
OUT
I
=6A Tj=25oC
OUT
Off State T
≥ 25oC
j
On State
VCC-V
OUT
I
=6A 404555 V
OUT
0.18
0.36
50
15
SWITCHING
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
d(off)
(di/d t)
(di/dt)
V
demag
Turn-on De lay Time Of
Output Current
Rise Time Of Outp ut
t
r
Current
Turn-o ff D e lay Time Of
Output Current
Fall Time Of Output
t
f
Current
Turn-o n Curre n t Slope I
on
Turn-o ff C u rren t Slop e I
off
Inductive Load Clamp
Volta ge
I
= 6 A Resistive Load
OUT
Input R ise Time < 0.1 µsT
I
= 6 A Resistive Load
OUT
Input R ise Time < 0.1 µsT
I
= 6 A Resistive Load
OUT
Input R ise Time < 0.1 µsT
I
= 6 A Resistive Load
OUT
Input R ise Time < 0.1 µsT
=6A
OUT
I
OUT=IOV
=6A
OUT
I
OUT=IOV
I
= 6 A L = 1 mH -7 -4 -2 V
OUT
25 ≤ Tj≤ 140oC
25 ≤ Tj≤ 140oC
=25oC
j
=25oC
j
=25oC
j
=25oC
j
15 µs
30 µs
20 µs
10 µs
0.52A/µs
o
o
mA
A/µs
2
A/µs
4
A/µs
C/W
C/W
Ω
Ω
µA
LOGICINPUT
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
V
I(hyst.)
I
V
Input Low Level
IL
Volta ge
Input H igh Level
IH
2(*)V
Volta ge
Input H ysteresis
0.5 V
Volta ge
Input C urrent VIN=5V 50 µA
IN
Input C lamp Voltage IIN=10mA
ICL
I
=-10mA
IN
6
-0.7
0.8 V
V
V
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VN05HSP
ELECTRICAL CHARACTERISTICS (Continued)
PROTECTIONAND DIAGNOSTICS
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(•) Status VoltageOutput
STAT
V
USD
V
SCL
I
OV
I
AV
I
OL
T
TSD
T
(*) TheVIH is internallyclamped at6Vabout. it ispossibleto connectthispinto an highervoltageviaanexternal resistorcalculatedto not
exceed10 mA at theinput pin.
(•) Statusdeterminaion> 100 µs aftertheswitchingedge.
Note1:Above V
reachesthermal shutdowntemperature.
Low
Under Voltage Shut
Down
(•) Status C la mp Vo lt age I
Over C urrent
Average Cu rrent in
Shor t Circu it
Open Load Current
Level
Termal Shut-Down
Temperature
Reset Temperature 125
R
= 36Vthe output voltageis clampedto36V. Powerdissipationincreasesand thedeviceturns off it junctiontemperature
CC
I
=1.6mA 0.4 v
STAT
=10mA
STAT
I
=-10mA
STAT
<10mΩ
R
LOAD
<10mΩ Tc=85oC
R
LOAD
5 180 mA
140
6
-0.7
1.4 A
5.5 V
20 A
o
o
V
V
C
C
FUNCTIONALDESCRIPTION
The device has a diagnostic output which
indicates open circuit (no load) and over
temperature conditions. The output signals are
processedby internal logic.
To protect the device against short circuit and
over-current condition the thermal protection
turns the integrated Power MOS off at a minimum
junction temperature of 140oC. When the
temperature returns to about 125oC the switch is
automatically turned on again. To ensur the
protection in all VCCconditions and in all the
junction temperature range it is necessary to limit
the voltage drop across Drain and Source (pin 3
and 5) at 29 V. The device is able to withstand a
load dump according the test pulse 5 at level III of
the ISO TR/1 7631.
Above VCC= 36V the output voltage is clamped
to 36V. Power dissipation increases and the
device turns off if junction temperature reaches
thermal shutdowntemperature.
PROTECTING THE DEVICE AGAINST
REVERSEBATTERY
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 1 (GND) and
ground, as shown in the typical application circuit
(fig. 3).
The consequences of the voltage drop across
this diode are as follows:
- If the input is pulled to power GND, a negative
voltage of -VFis seen by the device. (VIL,V
thresholds and V
are increased by VFwith
STAT
respect to power GND).
- The undervoltage shutdown level is increased
by VF.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit infig. 4), which becomes
the common signal GND for the whole control
board.
In this way no shift of VIH,VILand V
place and no negative voltage appears on the
INPUT pin; this solution allows the use of a
standard diode, with a breakdown voltage able to
handle any ISO normalized negative pulses that
occours in the automotive environment.
STAT
takes
IH
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TRUTH TABLE
INPUT OUTPUT DIAG N OST I C
Normal Operation L
Open Circuit (No Load) L
Over-temperature L
Under-voltage X
Figure 1: Waveforms
VN05HSP
L
H
H
H
X
H
L
H
L
L
L
L
H
H
H
L
H
L
H
H
Figure 2: Over Current Test Circuit
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VN05HSP
Figure 3: Typical Application CircuitWith A Schottky Diode For Reverse Supply Protection
Figure 4: Typical Application CircuitWith Separate Signal Ground
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Page 7
PowerSO-10 MECHANICAL DATA
VN05HSP
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 3.35 3.65 0.132 0.144
A1 0.00 0.10 0.000 0.004
B 0.40 0.60 0.016 0.024
c 0.35 0.55 0.013 0.022
D 9.40 9.60 0.370 0.378
D1 7.40 7.60 0.291 0.300
E 9.30 9.50 0.366 0.374
E1 7.20 7.40 0.283 0.291
E2 7.20 7.60 0.283 0.300
E3 6.10 6.35 0.240 0.250
E4 5.90 6.10 0.232 0.240
e 1.27 0.050
F 1.25 1.35 0.049 0.053
H 13.80 14.40 0.543 0.567
h 0.50 0.002
L 1.20 1.80 0.047 0.071
q 1.70 0.067
α 0
o
o
8
==
==
HE
h
A
F
A1
610
51
eB
M
0.25
D
==
D1
==
E2
==
DETAIL”A”
DETAIL”A”
Q
B
0.10 A
E1E3
==
SEATING
PLANE
A
C
α
B
E4
==
SEATING
PLANE
A1
L
==
0068039-C
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VN05HSP
Information furnished is believedto be accurate and reliable.However, SGS-THOMSONMicroelectronicsassumes no responsability for the
consequences ofuse of such information nor forany infringement of patents or otherrights ofthird parties which may resultsfrom its use. No
licenseis granted byimplication or otherwiseunder anypatentorpatent rightsofSGS-THOMSONMicroelectronics. Specifications mentioned
in this publicationare subject tochange without notice.This publication supersedesand replaces all informationpreviously supplied.
SGS-THOMSONMicroelectronicsproductsare notauthorizedfor useas criticalcomponents in lifesupportdevices orsystems withoutexpress
writtenapproval of SGS-THOMSONMicroelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - AllRights Reserved
Australia - Brazil - Canada- China - France- Germany- Hong Kong - Italy- Japan- Korea- Malaysia- Malta - Morocco- The Netherlands-
Singapore- Spain- Sweden - Switzerland- Taiwan - Thailand - UnitedKingdom - U.S.A
SGS-THOMSONMicroelectronics GROUPOF COMPANIES
.
8/8
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