Datasheet VN03SP Datasheet (SGS Thomson Microelectronics)



VN03SP

HIGH SIDE SMART POWER SOLID STATE RELAY

TYPE V

DSS

R

DS(on)

I

n(*)

V

CC

VN03SP 60 V 0.5 Ω 0.7 A 26 V

■ MAXIMUMCONTINUOUS OUTPUT

CURRENT(#):9 A @ T

■ 5 V LOGIC LEVEL COMPATIBLEINPUT

■ THERMALSHUT-DOWN

■ UNDERVOLTAGE PROTECTION

■ OPENDRAIN DIAGNOSTIC OUTPUT

■ INDUCTIVELOAD FAST

=85oC

c

DEMAGNETIZATION

■ VERY LOW STAND-BY POWER

DISSIPATION

DESCRIPTION

The VN03SP is a monolithic device made using
STMicroelectronics VIPower Technology,
intended for driving resistive or inductive loads
with one side grounded.

Built-in thermal shut-down protects the chip from
over temperatureand short circuit.
The open drain diagnostic output indicates: open
load in off state, and in on state, output shorted to

10

1

PowerSO-10

V

and overtemperature. Fast demagnetization

CC

of inductive loads is archivied by negative (-18V)
load voltageat turn-off.

(*) In = Nominal current according to ISO definition for high side automotive switch (see note 1)
(#) The maximum continuous output current is the the current at T
protection.

=85oC for a battery voltage of 13V which doesnot activate self

c

July 1998

1/9

VN03SP

ABSOLUTEMAXIMUMRATING

Symb o l Para met er Val u e Uni t

V

(BR)DSS

I

OUT

I

I

-V
I

STAT

V

ESD

P

T

T

CONNECTIONDIAGRAMS

Drain-S o ur ce Breakdown V olt ag e 60 V
Out put Current (con t . ) at Tc=85oC4A
Revers e Out put Curr ent at Tc=85oC-4A

R

Input Current ±10 mA

IN

Reverse Supply Voltage -4 V

CC

St at us Cu rr ent ±10 mA
Elect r o st at ic D ischarge ( 1. 5 kΩ, 100 pF) 2000 V
Power Dissipation at Tc=85oC14W

tot

Junction Oper at in g Temperat ure -40 t o 150

j

St orage Tem per atur e -55 t o 150

stg

o

C

o

C

CURRENT ANDVOLTAGECONVENTIONS

2/9

VN03SP

THERMALDATA

R

thj-case

R

thj-amb

($) When mounted using minimum recommended pad size on FR-4 board

ELECTRICAL CHARACTERISTICS (VCC=13 V; -40 ≤ Tj≤ 125oC unless otherwisespecified)
POWER

Symbol Parameter Test C ondition s Min. Typ. Max. Unit

V

In(*) Nominal Current T

R

I

V

DS(MAX)

SWITCHING

Symbol Parameter Test C ondition s Min. Typ. Max. Unit

t

d(on)

t

r

t

d(off)

t

f

(di/dt)

(di/dt)

V

demag

Ther mal Resis t ance Junct ion-cas e Max
Ther mal Resis t ance Junct ion-ambient ($) Max

Supply Voltag e 5.5 13 26 V

CC

=85oCV

c

On State Resi st a nc e I

on

Supply Current Of f Stat e Tj≥ 25oC

S

=0.7A

OUT

I

=0.7A Tj=25oC

OUT

≤ 0. 5 (note 1) 0.7 A

DS(on)

4.5
50

On State

Maximum Voltage Drop I

(^) Tur n-on Delay Tim e Of

Out put Current

(^) Rise T ime O f O utput

Current

(^) Tur n-of f Delay Time Of

Out put Current

(^) Fall Time Of Output

Current
Tur n-on Current S lope I

on

Tur n-of f C urr ent Slope I

off

Induc t i ve L oad Clamp

=4A Tc=85oC3.6V

OUT

I

= 0.7 A Resist iv e Load

OUT

15 µs

Input Rise T im e < 0. 1 µs
I

= 0.7 A Resist iv e Load

OUT

10 µs

Input Rise T im e < 0. 1 µs
I

= 0.7 A Resist iv e Load

OUT

15 µs

Input Rise T im e < 0. 1 µs
I

= 0.7 A Resist iv e Load

OUT

4 µs

Input Rise T im e < 0. 1 µs

=0.7A

OUT

I

OUT=IOV

=0.7A

OUT

I

OUT=IOV

I

=0.7A L=1mH -24 -18 -14 V

OUT

0.05 0.51A/µs

0.14 3

Volt age

1

0.5
50

15

3

o

C/W

o

C/W

Ω
Ω

µA

mA

A/µs
A/µs

A/µs

LOGIC INPUT

Symbol Parameter Test C ondition s Min. Typ. Max. Unit

V

V

V

I(hyst.)

I

V

Input Low Lev el

IL

Volt age
Input High Level

IH

Volt age
Input Hysteresis

Volt age
Input Current VIN=5V

IN

Input Clamp Voltage IIN=10mA

ICL

=2V

V

IN

=0.8V 25

V

IN

=-10mA

I

IN

0.8 V

2(•)V

0.5 V

250 5 00

250

5.5 6

-0.7 -0.3

µA
µA
µA

V
V

3/9

VN03SP

ELECTRICAL CHARACTERISTICS(continued)

PROTECTION AND DIAGNOSTICS

Symbol Parameter Test C ondition s Min. Typ. Max. Unit

V

STAT

V

USD

V

SCL

I

OV

I

I

T

TSD

T

V

t

1(on)

t

1(off)

t

2(off)

t

povl

t

pol

(^) See Switchig Time Waveforms
() The V
exceed 10 mA at the input pin.
note 1:The Nominal Current is the current at T
note 2:I
note 3:t

: minimum load recovery time which desactivates the statusoutput

t

1(off)

t

: minimum on time after thermal shut down which desactivates status output

2(off)

t

povltpol

St at us V olt age Output

I

=1.6mA 0.4 V

STAT

Low
Under V ol ta ge S hut

5V

Down
St at us Cl amp V olt age I

Over Current R
Aver age Current in

AV

=10mA

STAT

=-10mA

I

STAT

<10mΩ -40 Tc125oC28A

LOAD

R

<10mΩ Tc=85oC0.9A

LOAD

6

-0.7

Short Circuit
Open Loa d Cur rent

OL

53570mA

Level
Ther mal Shut-d ow n

140

Tem perature
Reset T emperatu re 125

R

Open Loa d Vo lt age

OL

Of f - State (no te 2) 2.5 3.75 5 V

Level
Open Loa d Fil t er ing

(note 3) 1 5 10 ms

Time
Open Loa d Fil t er ing

(note 3) 1 5 10 ms

Time
Open Loa d Fil t er ing

(note 3) 1 5 10 ms

Time
St at us De lay (note 3) 5 10 µs
St at us De lay (note 3) 50 700 µs

is internally clamped at 6V about. It is possible to connect this pinto an higher voltagevia an external resistor calculated to not

IH

=85oC for battery voltage of 13V which produces a voltage drop of 0.5 V

=(VCC-VOL)/ROL(see figure)

OL(off)

: minimum open load duration which acctivates the status output

1(on)

: ISO definition (see figure)

c

V
V

o

C

o

C

Note2 RelevantFigure Note 3 Relevant Figure

4/9

VN03SP

SwitchingTime Waveforms

FUNCTIONAL DESCRIPTION

The device has a diagnostic output which
indicates open load conditions in off state as well
as in on state, output shorted to V

CC

and
overtemperature. The truth table shows input,
diagnostic and output voltage level in normal
operation and in fault conditions. The output
signals are processed by internal logic. The
open load diagnostic output has a 5 ms filtering.
The filter gives a continuous signal for the fault
condition after an initialdelay of about 5 ms. This
means that a disconnection during normal
operation, with a duration of less than 5 ms does
not affect the status output. Equally, any
re-connection of less than 5 ms during a
disconnection duration does not affect the status
output. No delay occur for the status to go low in
case of overtemperature conditions. From the
falling edge of the input signal the status output
initially low in fault condition (over temperature or
open load) will go back with a delay (t
of overtemperature condition and a delay (t

)in case

povl

pol

)in
case of open load. These feature fully comply
with International Standard Office (I.S.O.)
requirement for automotiveHighSide Driver.

To protect the device against short circuit and
over current conditions, the thermal protection
turns the integrated Power MOS off at a
minimum junction temperature of 140
When the temperature returns to 125

o

C the

o

C.

switch is automatically turned on again.In short
circuit the protection reacts with virtually no
delay, the sensor being located in the region of
the die where the heat is generated. Driving
inductive loads, an internal function of the
device ensures the fast demagnetizationwith a

typicalvoltage (V

demag

) of -18V.

This function allows to greatly reduce the power
dissipationaccording to the formula:
P

dem

= 0.5 • L

load

• (I

load

)2• [(VCC+V

demag

)/V

demag

•f
where f = switchingfrequency and

V

=demagnetizationvoltage

demag

Based on this formula it is possible to know
the value of inductance and/or current to avoid
a thermal shut-down. The maximum inductance
which causes the chip temperature to reach the
shut down temperature in a specific thermal
environment, is infact a function of the load
currentfor a fixed V

CC,Vdemag

and f.

PROTECTING THE DEVICE AGAIST LOAD
DUMP - TEST PULSE 5

The device is able to withstand the test pulse
No. 5 at level II (V

= 46.5V) according to the

s

ISO T/R 7637/1 without any external
component. This means that all functions of the
device are performed as designed after
exposure to disturbance at level II. The VN06SP
is able to withstand the test pulse No.5 at level
III adding an external resistor of 150 ohm
between GND pin and ground plus a filter
capacitor of 1000 µF between V
ground(if R

LOAD

≤ 20 Ω).

CC

pin and

PROTECTING THE DEVICE AGAINST
REVERSE BATTERY

The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between GND pin and
ground, as shown in the typical application circuit
(fig.3).

The consequences of the voltage drop across
this diode are as follows:
If the input is pulled to power GND, a negative
voltage of -V

is seen by the device. (Vil, Vih

f

thresholds and Vstat are increased by Vf with
respect to power GND).
The undervoltageshutdown level is increa- sed
by Vf.

If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [6]
(see application circuit in fig. 4), which becomes
the common signal GND for the whole control
board avoiding shift of V

,Viland V

ih

stat

. This

solutionallows theuse of a standard diode.

]

5/9

VN03SP

TRUTH TABLE

INPUT OUTPUT DIAGNOSTIC

Normal Opera ti on L

H
Open Ci rc uit (No Load) H H L
Ov er- tempera tu re H L L
Under-voltage X L H
ShortloadtoV

CC

LHL

Figure1: Waveforms

L

H

H
H

Figure2: Over Current Test Circuit

6/9

Figure3: TypicalApplicationCircuitWith A SchottkyDiode For Reverse SupplyProtection

VN03SP

Figure4: TypicalApplicationCircuitWith Separate Signal Ground

7/9

VN03SP

PowerSO-10MECHANICAL DATA

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 3.35 3.65 0.132 0.144

A1 0.00 0.10 0.000 0.004

B 0.40 0.60 0.016 0.024

c 0.35 0.55 0.013 0.022

D 9.40 9.60 0.370 0.378

D1 7.40 7.60 0.291 0.300

E 9.30 9.50 0.366 0.374
E1 7.20 7.40 0.283 0.291
E2 7.20 7.60 0.283 0.300
E3 6.10 6.35 0.240 0.250
E4 5.90 6.10 0.232 0.240

e 1.27 0.050

F 1.25 1.35 0.049 0.053

H 13.80 14.40 0.543 0.567

h 0.50 0.002

L 1.20 1.80 0.047 0.071

q 1.70 0.067

α 0

o

o

8

==

==

HE

h

A

F

A1

610

51

eB

M

0.25

D

==

D1

==

DETAIL”A”

E2

==

DETAIL”A”

Q

B

0.10 A

E1E3

==

SEATING
PLANE

A

C

α

B

E4

==

SEATING

PLANE

A1

L

==

0068039-C

8/9

VN03SP

Information furnished isbelieved tobe accurate and reliable. However, STMicroelectronics assumes no responsibility forthe consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights ofSTMicroelectronics. Specification mentioned in this publication are
subject tochange without notice. This publication supersedes and replaces allinformation previously supplied.STMicroelectronics products
are not authorized foruse as critical componentsin life support devices or systems withoutexpress written approvalof STMicroelectronics.

Australia - Brazil - Canada- China - France- Germany - Italy- Japan - Korea- Malaysia - Malta - Mexico - Morocco- The Netherlands-

Singapore- Spain - Sweden- Switzerland- Taiwan -Thailand - United Kingdom- U.S.A.

The ST logo isa trademarkof STMicroelectronics

 1998 STMicroelectronics– Printed in Italy – All Rights Reserved

STMicroelectronicsGROUP OFCOMPANIES

.

9/9