
SEMICONDUCTOR TECHNICAL DATA
Order this document
by VN0300L/D
N–Channel — Enhancement
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage V
Drain–Gate Voltage V
Gate–Source Voltage
– Continuous
– Non–repetitive (tp ≤ 50 µs)
Continuous Drain Current I
Pulsed Drain Current I
Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Temperature TJ, T
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction to Ambient R
Maximum Lead Temperature for Soldering
Purposes, 1/16” from case for 10
seconds
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Max Unit
STATIC CHARACTERISTICS
Drain–Source Breakdown Voltage
(VDS = 0, ID = 10 µA)
Zero Gate Voltage Drain Current
(VDS = 48 Vdc, VGS = 0)
(VDS = 48 Vdc, VGS = 0, TA = 125°C)
Gate–Body Leakage
(VDS = 0, VGS = ±30 V)
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mA)
On–State Drain Current
(VDS = VGS, ID = 1.0 mA)
Drain–Source On Resistance
(VGS = 5.0 V, ID = 0.3 A)
(VGS = 10 V, ID = 1.0 A)
Forward Transconductance
(VDS = 10 V, ID = 0.5 A)
1. Pulse Test; Pulse Width < 300 ms, Duty Cycle v 2.0%.
(1)
(1)
(1)
DSS
DGR
V
GS
V
GSM
D
DM
P
D
stg
θJA
T
L
= 25°C unless otherwise noted)
A
3 DRAIN
2
GATE
1 SOURCE
60 V
60 V
± 20
± 40
200 mA
500 mA
350
2.8
— °C
312.5 °C/W
300 °C
Vdc
Vpk
mW
mW/°C
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
I
D(on)
r
DS(on)
g
fs
Motorola Preferred Device
1
2
3
CASE 29–04, STYLE 22
TO–92 (TO–226AA)
30 — V
—
—
— ±100 nA
0.8 2.5 V
1.0 — A
—
—
200 — mS
10
500
3.3
1.2
µA
Ω
TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1997
1

VN0300L
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Max Unit
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn–On Time
Turn–Off Time
(TA = 25°C unless otherwise noted) (Continued)
(VDS = 15 Vdc, VGS = 0,
f = 1.0 MHz
(VDD = 25 Vdc, ID = 1.0 A,
RL = 24 Ω, RG = 25 Ω)
C
iss
C
oss
C
rss
t
on
t
off
— 100 pF
— 95 pF
— 25 pF
— 30 ns
— 30 ns
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data

SEATING
PLANE
VN0300L
P ACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
A
B
R
P
L
XX
H
V
1
F
G
K
D
J
C
SECTION X–X
N
N
CASE 029–04
(TO–226AA)
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.022 0.41 0.55
F 0.016 0.019 0.41 0.48
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
K 0.500 ––– 12.70 –––
L 0.250 ––– 6.35 –––
N 0.080 0.105 2.04 2.66
P ––– 0.100 ––– 2.54
R 0.115 ––– 2.93 –––
V 0.135 ––– 3.43 –––
STYLE 22:
PIN 1. SOURCE
2. GATE
3. DRAIN
MILLIMETERSINCHES
ISSUE AD
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3

VN0300L
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
Mfax is a trademark of Motorola, Inc.
VN0300L/D