Datasheet VN02H Datasheet (SGS Thomson Microelectronics)



VN02H

HIGH SIDE SMART POWER SOLID STATE RELAY

TYPE V

VN02 H 60 V 0.4 Ω 6A 36V

■ OUTPUTCURRENT(CONTINUOUS):

6A @ T

■ 5V LOGIC LEVEL COMPATIBLE INPUT

■ THERMALSHUT-DOWN

■ UNDERVOLTAGE SHUT-DOWN

■ OPENDRAINDIAGNOSTIC OUTPUT

■ VERYLOW STAND-BYPOWER

=25oC

c

DSS

R

DS(on

)I

OUT

V

CC

DISSIPATION

DESCRIPTION

The VN02H is a monolithic devices made using
STMicroelectronics VIPower Technology,
intended for driving resistive or inductive loads
with one side grounded.

Built-in thermal shut-down protects the chip from
over temperatureand short circuit.

The input control is 5V logic level compatible.
The open drain diagnostic output indicates open

circuit(no load) and over temperaturestatus.

BLOCK DIAGRAM

PENTAWATT

(vertical)

PENTAWATT

(horizontal)

PENTAWATT

(in-line)

ORDER CODES:

PENTAWATTvertical VN02H
PENTAWATThorizontal VN02H(011Y)
PENTAWATTin-line VN02H(012Y)

March 1999

1/10

VN02H

ABSOLUTEMAXIMUMRATING

Symbol Parameter Value Unit

V

(BR)DSS

I

OUT

I

I

V

-V
I

STAT

V

ESD

P

T

T

CONNECTIONDIAGRAMS

Drain-S o ur ce Breakdown V olt age 60 V
Out put Cu r rent (cont. ) 6 A
Reverse Out put Current -6 A

R

Input Current ±10 mA

IN

Supply Voltage (for t = 400 ms) 60 V

CC

Reverse Supply V oltage -4 V

CC

St at us Cur rent ±10 mA
Elect r o st at ic Dischar ge (1.5 kΩ, 100 pF ) 2000 V
Power Dissipation at Tc≤ 25oC28W

tot

Junction O perat in g T em pe r at ure -40 t o 150

j

St orage Tem per atur e -55 t o 150

stg

o

C

o

C

CURRENT ANDVOLTAGECONVENTIONS

2/10

VN02H

THERMALDATA

50
20

o

C/W

o

C/W

µA

mA

A/µs
A/µs

4

A/µs

R

thj-case

R

thj- amb

Ther mal Resis t an ce Junction- case Max

Therm al Resistanc e Junction-a m bient Max

4.4
60

ELECTRICAL CHARACTERISTICS (VCC=9 to 36 V; -40≤ Tj≤ 125oCunless otherwise specified)
POWER

Symbol Parameter Test C ondition s Min. Typ. Max. Unit

V

R

I

Supply Voltage see note 1 5 36 V

CC

On Stat e Resist a nce I

on

Supply Current Of f Stat e Tj≥ 25oC

S

=3A

OUT

=3A Tj=25oC

I

OUT

0.8

0.4

On State

SWITCHING

Symbol Parameter Test C ondition s Min. Typ. Max. Unit

t

d(on)

t

r

t

d(off)

t

f

(di/dt)

(di/dt)

V

demag

Turn-on Delay Time Of
Out put Cu r rent

Rise TimeOf Output
Current

Turn-off Delay Time Of
Out put Cu r rent

Fall T ime Of Output
Current

Tur n-on Current S lope I

on

Tur n-of f C urrent Slope I

off

Induc t i ve Load Clamp
Volt age

I

= 3 A Resis tive Load

OUT

Input Rise Time < 0.1 µsT
I

= 3 A Resis tive Load

OUT

Input Rise Time < 0.1 µsT
I

= 3 A Resis tive Load

OUT

Input Rise Time < 0.1 µsT
I

= 3 A Resis tive Load

OUT

Input Rise Time < 0.1 µsT

=3A

OUT

I

OUT=IOV

=3A

OUT

I

OUT=IOV

I

= 3 A L = 1 m H -7 -4 -2 V

OUT

25 ≤ Tj≤ 140oC

25 ≤ Tj≤ 140oC

=25oC

j

=25oC

j

=25oC

j

=25oC

j

51020µs

51545µs

51530µs

2615µs

0.05 0.15 0.52A/µs

0.1 0.4 2

Ω
Ω

LOGIC INPUT

Symbol Parameter Test C ondition s Min. Typ. Max. Unit

V

V

V

I(hyst.)

I

V

Input Low Level

IL

Volt age
Input Hig h Lev el

IH

2(*)V

Volt age
Input Hysteresis

0.5 V

Volt age
Input Current VIN= 5 V 250 5 00 µA

IN

Input Cla m p Volt ag e IIN=10mA

ICL

=-10mA

I

IN

5.5 6

-0.7 -0.3

0.8 V

V
V

3/10

VN02H

ELECTRICAL CHARACTERISTICS (continued)

PROTECTION AND DIAGNOSTICS

Symbol Parameter Test C ondition s Min. Typ. Max. Unit

V

(•) Status V olt age Out put

STAT

V

USD

V

SCL

t

SC

I

OV

I

I

I

OUT

T

TSD

T

(*) The VIHis internallyclamped at6V about. Itis possible to connect this pin to an higher voltage via anexternal resistor calculated to not
exceed 10 mA at the input pin.
(•) Status determination > 100 µs after the switching edge.
Note 1 : AboveV
temperature reaches thermal shutdown temperature.

Low
Under Voltage Shut

Down

(•) Stat us Clam p Volt age I

Swit ch-off T im e in
Short Circ u it Condition
at Start-Up

Over Current R
Aver age Current in

AV

Short Circuit
Open Load Cur rent

OL

Level
Leakage Current Of f Stat e V

Ther mal Shut- d own
Tem perature

Reset Temperat u r e 125 145

R

= 36 V the outputvoltage is clamped to 36 V. Power dissipation increases and the device turnsoff ifjunction

CC

I

=1.6mA 0.4 V

STAT

2.5 5 V

=10mA

STAT

=-10mA

I

STAT

R

<10mΩ VCC=13V

LOAD

=25oC

T

c

<10mΩ VCC=13V 28 A

LOAD

R

<10mΩ VCC=13V

LOAD

=85oC

T

c

9< VCC<32V 5 70 mA

=0V 60 µA

OUT

5.5 6

-0.7 -0.3

1.5 5 ms

0.9 1.8 A

140 160

V
V

o

C

o

C

FUNCTIONALDESCRIPTION

The device has a diagnostic output which
indicates open circuit (no load) and over
temperature conditions. The output signals are
processedby internallogic.

To protect the device against short circuit and
over-current condition the thermal protection
turns the integratedPower MOSoff at a minimum
junction temperature of 140
temperaturereturns to about 125

o

C. When the

o

C theswitch is
automatically turned on again. To ensur the
protection in all V

conditions and in all the

CC

junction temperature range it is necessary to limit
the voltage drop across Drain and Source (pin 3
and 5) at 29 V. The device is able to withstanda
load dump according the test pulse 5 at level III of
the ISO TR/1 7631.

Above V

= 36V the output voltage is clamped

CC

to 36V. Power dissipation increases and the
device turns off if junction temperature reaches
thermalshutdowntemperature.

PROTECTING THE DEVICE AGAINST
REVERSEBATTERY

The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to

insert a Schottky diode between pin 1 (GND) and
ground, as shown in the typical application circuit
(fig. 3).

The consequences of the voltage drop across
this diode are as follows:

- If the input is pulled to power GND, a negative

voltage of -V
thresholds and V
respect to powerGND).

is seen by the device. (VIL,V

F

are increased by VFwith

STAT

IH

- The undervoltage shutdown level is increased

by V

.

F

If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit infig. 4), which becomes
the common signal GND for the whole control
board.

In this way no shift of V

IH,VIL

place and no negative voltage appears on the
INPUT pin; this solution allows the use of a
standard diode, with a breakdown voltage able to
handle any ISO normalized negative pulses that
occours in the automotiveenvironment.

and V

STAT

takes

4/10

TRUTH TABLE

INPUT OUTPUT DIAGNOSTIC

Normal Opera ti on L

Open Circ uit (No Load) L

Ov er- temperature L

Under-voltage L

Figure1: Waveforms

VN02H

L

H

H

H

H

H

L

H

L

H

L
L

H
H

H

L

H

L

H
H

Figure2: Over Current Test Circuit

5/10

VN02H

Figure3: TypicalApplicationCircuitWith A Schottky Diode For Reverse SupplyProtection

Figure4: TypicalApplicationCircuitWith Separate Signal Ground

6/10

PENTAWATT (VERTICAL) MECHANICAL DATA

VN02H

DIM.

A 4.8 0.189
C 1.37 0.054
D 2.4 2.8 0.094 0.110

D1 1.2 1.35 0.047 0.053

E 0.35 0.55 0.014 0.022
F 0.8 1.05 0.031 0.041

F1 1 1.4 0.039 0.055

G 3.2 3.4 3.6 0.126 0.134 0.142

G1 6.6 6.8 7 0.260 0.268 0.276

H2 10.4 0.409
H3 10.05 10.4 0.396 0.409

L 17.85 0.703

L1 15.75 0.620
L2 21.4 0.843
L3 22.5 0.886
L5 2.6 3 0.102 0.118
L6 15.1 15.8 0.594 0.622
L7 6 6.6 0.236 0.260

M 4.5 0.177

M1 4 0.157
Dia 3.65 3.85 0.144 0.152

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

P010E

7/10

VN02H

PENTAWATT (HORIZONTAL) MECHANICAL DATA

DIM.

MIN TYP MAX MIN TYP MAX

A 4.30 4.80 0.169 0.189
C 1.17 1.37 0.046 0.054
D 2.40 2.80 0.094 0.110
E 0.35 0.55 0.014 0.021
F 0.80 1.05 0.031 0.041
G 3.20 3.60 0.126 0.142

G1 6.60 7.00 0.260 0.275

H1 9.30 9.70 0.366 0.382
H2 10.40 0.409
H3 10.05 10.40 0.396 0.409
L2 14.60 15.20 0.575 0.598
L3 3.50 4.10 0.137 0.161
L5 2.60 3.00 0.102 0.118
L6 15.10 15.80 0.594 0.622
L7 6.00 6.60 0.236 0.260
V4 90

Diam. 3.65 3.85 0.144 0.151

mm inch

o

90

o

8/10

PO1OL1_E

PENTAWATT(IN-LINE) MECHANICAL DATA

VN02H

DIM.

A 4.30 4.80 0.169 0.189
C 1.17 1.37 0.046 0.054
D 2.40 2.80 0.094 0.110
E 0.35 0.55 0.014 0.021
F 0.80 1.05 0.031 0.041

F2 1.10 1.40 0.043 0.055
F3 1.25 1.55 0.049 0.061

G 3.20 3.60 0.126 0.142

G1 6.60 7.00 0.260 0.275

H1 9.30 9.70 0.366 0.382
H2 10.40 0.409
H3 10.05 10.40 0.396 0.409
L2 23.05 23.80 0.907 0.937
L3 25.30 26.10 0.996 1.027
L4 0.90 2.90 0.035 0.114
L5 2.60 3.00 0.102 0.118
L6 15.10 15.80 0.594 0.622
L7 6.00 6.60 0.236 0.260
V4 90

Diam. 3.65 3.85 0.144 0.151

MIN TYP MAX MIN TYP MAX

mm inch

o

90

o

P010D

9/10

VN02H

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subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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