Datasheet VN02AN Datasheet (SGS Thomson Microelectronics)



VN02AN

HIGH SIDE SMART POWER SOLID STATE RELAY

TYPE V

VN02AN 60 V 0.35 Ω 7A 36V

■ OUTPUTCURRENT(CONTINUOUS):

7A @ T

■ LOGICLEVEL5V COMPATIBLEINPUT

■ THERMALSHUT-DOWN

■ UNDERVOLTAGE PROTECTION

■ OPENDRAINDIAGNOSTIC OUTPUT

■ FAST DEMAGNETIZATIONOF INDUCTIVE

=25oC

c

DSS

R

DS(on

)I

OUT

V

CC

LOAD

DESCRIPTION

The VN02AN is a monolithic device made using
STMicroelectronics VIPower Technology,
intended for driving resistive or inductive loads
with one side grounded.

Built-in thermal shut-down protects the chip from
over temperatureand short circuit.

The diagnostic output indicates an over
temperaturestatus.

Fast turn-off of inductive load is achieved by
negative (-18 V) load voltage at turn-off.

BLOCK DIAGRAM

PENTAWATT

(vertical)

PENTAWATT

(horizontal)

PENTAWATT

(in-line)

ORDER CODES:

PENTAWATTvertical VN02AN

PENTAWATThorizontal VN02AN(011Y)

PENTAWATTin-line VN02AN(012Y)

July 1998

1/11

VN02AN

ABSOLUTEMAXIMUMRATING

Symbol Parameter Value Unit

V

(BR)DSS

I

OUT

I

I

-V
I

STAT

V

ESD

P

T

T

CONNECTIONDIAGRAMS

Drain-S o ur ce Breakdown V olt ag e 60 V
Out put Cur rent (cont. ) 7 A
Reverse Output Cu rrent -7 A

R

Input Cur rent ±10 mA

IN

Reverse Supply V oltage -4 V

CC

St at us Current (sink) ±10 mA
Elect r o st at ic Discharge ( 1. 5 kΩ, 100 pF) 2000 V
Power Dissipation at Tc≤ 25oC31W

tot

Junction Operat ing Tempe r at ur e -40 t o 150

j

St orage Tem per atur e -55 t o 150

stg

o

C

o

C

CURRENT ANDVOLTAGECONVENTIONS

2/11

THERMALDATA

R

thj-case

R

thj- amb

Ther mal Resis t an ce Junction-cas e Max
Ther mal Resis t an ce Junction-ambien t Max

60

VN02AN

4

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS (VCC=9 to 36 V; T

=25oC unless otherwise specified)

case

POWER

Symbol Parameter Test C ondition s Min. Typ. Max. Unit

V

* Supply Voltag e -40oC<Tj< 125oC736V

CC

R

I

On Stat e Re si st ance I

on

Supply C ur rent Of f State VCC=30V

S

=3A

OUT

=1A VCC=30V Tj=125oC

I

OUT

On State V
On State V

=30V

CC

=30V Tj= 125oC

CC

0.35

0.6
1

9
7

SWITCHING

Symbol Parameter Test C ondition s Min. Typ. Max. Unit

t

d(on)

t

d(off)

(di/dt)

(di/dt)

V

DEMAG

Turn-on Delay Time Of
Out put Cur rent

Rise TimeOf Output

t

r

Current
Turn-off Delay T ime O f

Out put Cur rent
Fall T ime Of Output

t

f

Current
Tur n-on C ur rent S lope I

on

Tur n-of f Curr ent S lope I

off

Induc t i ve Load Clam p
Volt age

I

= 3 A Resistive Load

OUT

15 µs

Input Ris e Time < 0.1 µs
I

= 3 A Resistive Load

OUT

15 µs

Input Ris e Time < 0.1 µs
I

= 3 A Resistive Load

OUT

14 µs

Input Ris e Time < 0.1 µs
I

= 3 A Resistive Load

OUT

4.5 µs

Input Ris e Time < 0.1 µs

=3A 25oC<Tj<125oC

OUT

I

OUT=IOV

=3A 25oC<Tj<125oC

OUT

I

OUT=IOV

I

=3A -40oC<Tj<125oC -24 -18 -14 V

OUT

25oC<Tj<125oC

25oC<Tj<125oC

0.51A/µs

1.54A/µs

Ω
Ω

mA
mA
mA

A/µs

A/µs

LOGIC INPUT (-40oC ≤ Tj≤ 125oC unless otherwisespecified)

Symbol Parameter Test C ondition s Min. Typ. Max. Unit

V

V

V

I(hyst.)

I

V

Input Low Level

IL

Volt age
Input Hig h Level

IH

Volt age
Input Hysteresis

Volt age
Input Cur rent VIN=5V

IN

Input Cla mp Volt ag e IIN=10mA

ICL

=2V

V

IN

=0.8V 25

V

IN

I

=-10mA

IN

0.8 V

2(*)V

0.5 V

250 600

300

5.5 6

-0.7 -0.3

µA
µA
µA

V
V

3/11

VN02AN

ELECTRICAL CHARACTERISTICS (continued)

o

PROTECTION AND DIAGNOSTICS(-40

C ≤ Tj≤ 125oC unless otherwisespecified)

Symbol Parameter Test C ondition s Min. Typ. Max. Unit

V

STAT

St at us Volt age Out put

I

=1.6mA 0.4 V

STAT

Low

I

STAT

V

USD

St at us Leakage Cu rre nt V
Under Vol ta ge Shut

=5V 10 µA

STAT

3.5 6 7 V

Down

V

SCL

I

OV

I

St at us Clamp Volt age I

Over Current R
Aver age Current In

av

=10mA

STAT

I

=-10mA

STAT

<10mΩ 15 A

LOAD

R

<10mΩ Tc=85oC0.6A

LOAD

5.5 6

-0.7 -0.3

V
V

Short Circuit

I

DOFF

T

TSD

Leakage Current VCC=30V 1 mA
Ther mal Shut-d own

140

o

Tem perature

T

(*) The Vih is internallyclamped at about 6V. It is possible to connect this pin to a higher voltagevia an external resistor calculated to not
exceed 10 mA at the input pin.

Reset Temperatu r e 125

R

o

TRUTH TABLE

INPUT DIAGNOSTIC OUTPUT

Normal Opera ti on L

H
Ov er- temperature H L L
Under-voltage X H L

H
H

L

H

C

C

Figure1: Waveforms

4/11

VN02AN

FUNCTIONAL DESCRIPTION

The device has a diagnostic output which
indicatesover temperatureconditions.

The truth table shows input, diagnostic output
status and output voltage level in normal
operation and fault conditions. The output signals
are processedby internal logic.

To protect the device against short circuit and
over current conditions, the thermal protection
turns the integrated Power MOS off at a minimum
junction temperature of 140
temperature returns to 125

o

C. When the

o

C the switch is
automatically turned on again. To ensure the
protection in all V

conditions and in all the

CC

junction temperature range it is necessary to limit
the voltage drop across Drain and Source (pin 3
and 5) at 28Vaccordingto:

V

ds=VCC-IOV

*(Ri+Rw+Rl)
where:
R

= internal resistence ofPower Supply

i

R

=Wires resistance

w

R

= Short Circuitresistance

l

Driving inductiveloads, an internal function of the
device ensures the fast demagnetization with
typical voltage (V

demag

) of -18V.

This function allows the reduction of the power
dissipationaccordingto the formula:

P

dem

= 0.5 * L

load

*(I

)2* [(VCC+V

load

dem

)/V

dem

]*f

wheref = Switching Frequency
Based on this formula it is possible to know the

value of inductance and/or current to avoid a
thermalshut-down.

PROTECTING THE DEVICE AGAINST RE­VERSEBATTERY

The simpliest way to protect the device against a
continuous reverse battery voltage (-36V) is to
insert a Schottky diode between pin 1 (GND)and
ground, as shown in the typical application circuit
(Fig. 3). The consequences of the voltage drop
acrossthis diode are as follows:

If the input is pulled to power GND, a negative
voltage of -V

is seen by the device. (Vil,V

f

thresholds and Vstat are increased by Vfwith
respectto power GND).

The undervoltageshut-down level is increased by
V

.

f

If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit in fig. 4), which becomes
the common signal GND for the whole control
board avoiding shift of V

,Viland V

ih

stat

. This

solutionallowsthe use of a standard diode.

ih

Figure2: Over Current Test Circuit

5/11

VN02AN

Figure3: TypicalApplicationCircuitWith A SchottkyDiode ForReverse Supply Protection

Figure4: TypicalApplicationCircuitWith Separate Signal Ground

6/11

VN02AN

R

DS(on)

R

DS(on)

vs Junction Temperature

vs Output Current

R

vs Supply Voltage

DS(on)

InputVoltagesvs Junction Temperature

OutputCurrentDerating

7/11

VN02AN

PENTAWATT (VERTICAL) MECHANICAL DATA

DIM.

A 4.8 0.189
C 1.37 0.054
D 2.4 2.8 0.094 0.110

D1 1.2 1.35 0.047 0.053

E 0.35 0.55 0.014 0.022
F 0.8 1.05 0.031 0.041

F1 1 1.4 0.039 0.055

G 3.2 3.4 3.6 0.126 0.134 0.142
G1 6.6 6.8 7 0.260 0.268 0.276
H2 10.4 0.409
H3 10.05 10.4 0.396 0.409

L 17.85 0.703
L1 15.75 0.620
L2 21.4 0.843
L3 22.5 0.886
L5 2.6 3 0.102 0.118
L6 15.1 15.8 0.594 0.622
L7 6 6.6 0.236 0.260

M 4.5 0.177
M1 4 0.157
Dia 3.65 3.85 0.144 0.152

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

8/11

P010E

PENTAWATT (HORIZONTAL) MECHANICALDATA

VN02AN

DIM.

A 4.8 0.189
C 1.37 0.054
D 2.4 2.8 0.094 0.110

D1 1.2 1.35 0.047 0.053

E 0.35 0.55 0.014 0.022
F 0.8 1.05 0.031 0.041

F1 1 1.4 0.039 0.055

G 3.2 3.4 3.6 0.126 0.134 0.142
G1 6.6 6.8 7 0.260 0.268 0.276
H2 10.4 0.409
H3 10.05 10.4 0.396 0.409

L 14.2 15 0.559 0.590
L1 5.7 6.2 0244
L2 14.6 15.2 0.598
L3 3.5 4.1 0.137 0.161
L5 2.6 3 0.102 0.118
L6 15.1 15.8 0.594 0.622
L7 6 6.6 0.236 0.260

Dia 3.65 3.85 0.144 0.152

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

P010F

9/11

VN02AN

PENTAWATT (IN-LINE) MECHANICAL DATA

DIM.

MIN TYP MAX MIN TYP MAX

A 4.8 0.189
C 1.37 0.054
D 2.4 2.8 0.094 0.110

D1 1.2 1.35 0.047 0.053

E 0.35 0.55 0.014 0.022
F 0.8 1.05 0.031 0.041

F1 1 1.4 0.039 0.055

G 3.2 3.4 3.6 0.126 0.134 0.142

G1 6.6 6.8 7 0.260 0.268 0.276

H2 10.4 0.409

H3 10.05 10.4 0.396 0.409

L2 23.05 23.4 23.8 0.907 0.921 0.937
L3 25.3 25.65 26.1 0.996 1.010 1.028
L5 2.6 3 0.102 0.118
L6 15.1 15.8 0.594 0.622
L7 6 6.6 0.236 0.260

Diam. 3.65 3.85 0.144 0.152

mm inch

10/11

P010D

VN02AN

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