Datasheet VF20100S-E3 Specification

V20100S VF20100S

VI20100SVB20100S

PIN 1

PIN 2

PIN 3

K

1

2

3

1

K

2

3

TO-220AB

NC

A

K

HEATSINK

NC

A

K

PIN 1

PIN 2

PIN 3

PIN 1

PIN 2

CASE

PIN 3

TO-262AA

TMBS

®

ITO-220AB

1

2

3

D2PAK (TO-263AB)

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Available

Models

V20100S-E3, VF20100S-E3, VB20100S-E3, VI20100S-E3

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Vishay General Semiconductor

High Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low VF = 0.446 V at IF = 5 A

FEATURES

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Low thermal resistance

• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)

• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB, and
TO-262AA package)

• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.

DESIGN SUPPORT TOOLS

Revision: 18-Jun-2018

MECHANICAL DATA

Case: TO-220AB, ITO-220AB, D2PAK (TO-263AB), and
TO-262AA

Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade

Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test

Polarity: as marked

PRIMARY CHARACTERISTICS

I

F(AV)

V

RRM

I

FSM

V

at IF = 20 A 0.69 V

F

Circuit configuration Single

T

max. 150 °C

J

Package

D

TO-220AB, ITO-220AB,

2

PAK (TO-263AB), TO-262AA

20 A

100 V

250 A

Mounting Torque: 10 in-lbs max.

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL V20100S VF20100S VB20100S VI20100S UNIT

Max. repetitive peak reverse voltage V

Max. average forward rectified current (fig. 1) I

Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load

Non-repetitive avalanche energy at T

Peak repetitive reverse current at t

Voltage rate of change (rated V

Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min V

Operating junction and storage temperature range T

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p

) dV/dt 10 000 V/μs

R

= 25 °C, L = 60 mH EAS 210 mJ

J

= 2 μs, 1 kHz, TJ = 38 °C ± 2 °C I

1

100 V

RRM

20 A

F(AV)

I

250 A

FSM

1.0 A

RRM

AC

, T

J

STG

1500 V

-40 to +150 °C

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0

2

4

6

8

10

12

14

16

18

20

0 4 8 12 16 20 24

D = 0.1

D = 0.2

D = 0.3

D = 0.5

D = 0.8

D = 1.0

Average Forward Current (A)

Average Power Loss (W)

D = tp/T t

p

T

V20100S-E3, VF20100S-E3, VB20100S-E3, VI20100S-E3

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ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT

Breakdown voltage I

Instantaneous forward voltage

Reverse current

Notes

(1)

Pulse test: 300 μs pulse width, 1 % duty cycle

(2)

Pulse test: Pulse width  40 ms

= 10 mA TA = 25 °C V

R

I

= 5 A

F

I

= 10 A 0.60 -

F

I

= 20 A 0.79 0.90

F

I

= 5 A

F

IF = 10 A 0.53 -

I

= 20 A 0.69 0.76

F

= 70 V

V

R

= 100 V

V

R

T

= 25 °C

A

V

F

T

= 125 °C

A

T

= 25 °C

A

T

= 125 °C 7 - mA

A

T

= 25 °C 70 500 μA

A

T

= 125 °C 14 30 mA

A

I

R

Vishay General Semiconductor

BR

(1)

(2)

105 (min.) - V

0.51 -

0.45 -

17 - μA

V

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL V20100S VF20100S VB20100S VI20100S UNIT

Typical thermal resistance R

JC

2.0 4.0 2.0 2.0 °C/W

ORDERING INFORMATION (Example)

PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE

TO-220AB V20100S-E3/4W 1.88 4W 50/tube Tube

ITO-220AB VF20100S-E3/4W 1.75 4W 50/tube Tube

TO-263AB VB20100S-E3/4W 1.37 4W 50/tube Tube

TO-263AB VB20100S-E3/8W 1.37 8W 800/reel Tape and reel

TO-262AA VI20100S-E3/4W 1.45 4W 50/tube Tube

RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

24

Resistive or Inductive Load

20

16

VF20100S

12

8

VB20100S

V20100S
VI20100S

4

Average Forward Current (A)

Revision: 18-Jun-2018

0

0 25 50 75 100 125 150 175

Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics

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Case Temperature (°C)

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0.1

1

10

100

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

TA = 150 °C

TA = 125 °C

T

A

= 25 °C

Instantaneous Forward Voltage (V)

Instantaneous Forward Current (A)

0.001

0.01

0.1

1

10

100

10 20 30 40 50 60 70 80 90 100

Percent of Rated Peak Reverse Voltage (%)

Instantaneous Reverse Current (mA)

TA = 150 °C

T

A

= 125 °C

T

A

= 25 °C

10

100

1000

10 000

0.1 1 10 100

Reverse Voltage (V)

Junction Capacitance (pF)

TJ = 25 °C
f = 1.0 MHz
V

sig

= 50 mVp-p

0.001

0.01

0.1

1

10

0.01 0.1 1 10 100

t - Pulse Duration (s)

Transient Thermal Impedance (°C/W)

Junction to Case

V(B,I)20100S

1

10

0.01 0.1 1 10 100

t - Pulse Duration (s)

Transient Thermal Impedance (°C/W)

Junction to Case

VF20100S

V20100S-E3, VF20100S-E3, VB20100S-E3, VI20100S-E3

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Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 4 - Typical Reverse Characteristics

Fig. 6 - Typical Transient Thermal Impedance

Fig. 7 - Typical Transient Thermal Impedance

Revision: 18-Jun-2018

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Fig. 5 - Typical Junction Capacitance

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TO-220AB

0.113 (2.87)

0.103 (2.62)

0.415 (10.54)

0.380 (9.65)

0.635 (16.13)

0.625 (15.87)

PIN

0.160 (4.06)

0.140 (3.56)

0.057 (1.45)

0.045 (1.14)

0.104 (2.65)

0.096 (2.45)

0.205 (5.20)

0.195 (4.95)

0.035 (0.90)

0.028 (0.70)

0.161 (4.08)

0.139 (3.53)

132

0.185 (4.70)

0.175 (4.44)

0.055 (1.39)

0.045 (1.14)

0.350 (8.89)

0.330 (8.38)

1.148 (29.16)

1.118 (28.40)

0.560 (14.22)

0.530 (13.46)

0.022 (0.56)

0.014 (0.36)

0.110 (2.79)

0.100 (2.54)

0.603 (15.32)

0.573 (14.55)

V20100S-E3, VF20100S-E3, VB20100S-E3, VI20100S-E3

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PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

Vishay General Semiconductor

Revision: 18-Jun-2018

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Document Number: 88975

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D2PAK (TO-263AB)

0.670 (17.02)

0.591 (15.00)

0.105 (2.67)

0.095 (2.41)

0.08 (2.032) MIN.

0.15 (3.81) MIN.

0.33 (8.38) MIN.

0.42 (10.66) MIN.

NCA

K

K

0.140 (3.56)

0.110 (2.79)

0.021 (0.53)

0.014 (0.36)

0.110 (2.79)

0.090 (2.29)

0 to 0.01 (0 to 0.254)

0.055 (1.40)

0.047 (1.19)

0.055 (1.40)

0.045 (1.14)

0.190 (4.83)

0.160 (4.06)

0.205 (5.20)

0.195 (4.95)

0.624 (15.85)

0.591 (15.00)

0.037 (0.940)

0.027 (0.686)

0.105 (2.67)

0.095 (2.41)

0.360 (9.14)

0.320 (8.13)

0.411 (10.45)

0.380 (9.65)

0.245 (6.22)
MIN.

Mounting Pad Layout

V20100S-E3, VF20100S-E3, VB20100S-E3, VI20100S-E3

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TO-262AA

Vishay General Semiconductor

0.950 (24.13)

0.920 (23.37)

0.160 (4.06)

0.140 (3.56)

0.057 (1.45)

0.045 (1.14)

0.104 (2.65)

0.096 (2.45)

0.411 (10.45)

0.380 (9.65)

PIN

123

0.055 (1.40)

0.047 (1.19)

0.510 (12.95)

0.470 (11.94)

0.035 (0.90)

0.028 (0.70)

0.205 (5.20)

0.195 (4.95)

0.350 (8.89)

0.330 (8.38)

0.560 (14.22)

0.530 (13.46)

0.185 (4.70)

0.175 (4.44)

0.055 (1.40)

0.045 (1.14)

0.401 (10.19)

0.381 (9.68)

0.110 (2.79)

0.100 (2.54)

0.022 (0.56)

0.014 (0.35)

Revision: 18-Jun-2018

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