Datasheet VENUS-QP1T, VENUS-QP1S, VENUS-L, VENUS-KG Datasheet (MITEL)

Features

● Selectable dual RF input ports for 900MHz AMPS
and 1900MHz CDMA bands.

● Power Management Control

Description

VENUS-L is a dual integrated mixer circuit designed to
meet the IS95 and J-STD-008 receive system specifica­tions operating in the 900 MHz and 1900MHz bands.
Venus-L is part of a complete chipset solution for CDMA
phones called the Planet chipset, and is built on a Mitel
advanced bipolar process with FT's of 25GHz.

Figure 2. Block diagram

VENUS-L

CDMA/AMPS Dual Band RF Receiver

Preliminary Information

DS5082 Issue 2.1 J June 1999

GND

VCC

CDMA IF

CONTROL

CDMA IFB

AMPS IF

AMPS IFB

CHIP ENABLE

BAND 1900

LO 1GHZ

LO 2GHZ

RF 1900

RF 900

Ordering Iinformation

VENUS-L/KG/QP1S
VENUS-L/KG/QP1T

2

VENUS-L Preliminary Information

PIN 1

REF. SPOT

Figure1 Pin Connections

QSOP16

CDMA IF

CDMA IFB

VCC

LO 2GHZ

GND

RF 900

GND

CHIP ENABLE

BAND 1900
GND
RF 1900
GND
LO 1GHZ
VCC
AMPS IFB
AMPS IF

9

16

8

1

Circuit Description

The RF section of VENUS-L contains all of the circuitry
necessary to downconvert the RF signal from 900 MHz
or 1900 MHz to an IF of 50-250 MHz, and to correctly
interface with a suitable IF SAW filter. Two RF inputs are
provided, one for the 1900MHz band and one for the 900
MHz band. The required input is activated by means of
the ‘BAND 1900’ pin.

The input is a gm stage which will provide a
characteristic impedance to correctly terminate the RF
image-reject SAW filter.

Two LO ports are provided, one for 1900MHz band and
one for 900 MHz band, both with low noise buffer
amplifiers.

External matching components are required on the RF,
LO and IF ports.

Pin Description

Pin No Pin Name Description

1 CDMA IF CDMA (1900MHz mixer) IF SAW output
2 CDMA IFB CDMA (1900MHz mixer) IF SAW output bar
3 VCC Positive supply
4 LO 2GHZ 2 GHz LO input for 1900MHz mixer
5 GND Ground
6 RF 900 900MHz RF input
7 GND Ground
8 CHIP ENABLE Logic input for chip enable

9 AMPS IF AMPS (900MHz mixer) IF SAW output
10 AMPS IFB AMPS (900MHz mixer) IF SAW output bar
11 VCC Positive supply
12 LO 1GHZ 1GHz LO input for 900MHz mixer
13 GND Ground
14 RF 1900 1900MHz RF input
15 GND Ground
16 BAND 1900 Logic input to select 1900MHz or 900MHz signal path operation

3

Preliminary Information VENUS-L

Absolute Limits

Description Min. Typ. Max. Units Comments

Supply voltage, Vcc 4.0 V
Operating temperature, Top -30 70 deg C Pin temperature
Storage temperature, Tstg -40 125 deg C Ambient temperature
Junction temperature -30 125 deg C
Logic input high, VIH Vcc+0.6 V
Logic input low, VIL -0.6 V

Electrostatic Protection. High frequency RF device. This device has limited ESD protection on some pins (500V
Human body Model). Electrostatic handling precautions must be applied.

Description CHIP ENABLE BAND 1900 Comments

Standby Mode 0 X All circuits powered down
900MHz (AMPS) 1 0 900MHz (AMPS) signal path enabled
1900MHz (CDMA) 1 1 1900MHz (CDMA) signal path enabled

Electrical Characteristics (DC specification)

T

AMB

= -30°C to +70°C, VCC = +2.7 to +3.6V. These characteristics are guaranteed by either production test or

design. They apply within the specified ambient temperature and supply voltage ranges unless otherwise stated.

Operating Modes

Characteristic Value Units Conditions

Min Typ Max

General

Supply voltage 2.7 3.0 3.6 V All Vcc pins.
Operating. Temperature -30 25 70 deg C Ambient

Current Consumption

Standby Mode, RF section 10 100 µA
1900MHz Mode operation 15 mA
900MHz Mode operation 13 mA

Control Logic

Input logic high, VIH Vcc-0.5 Vcc+0.1 V All logic inputs
Input logic low, VIL -0.1 0.5 V All logic inputs
Input high current, IIH -10 10 µA All logic inputs
Input low current, IIL -10 10 µA All logic inputs

4

VENUS-L Preliminary Information

Electrical Characteristics (AC specification)

T

AMB

= -30°C to +70°C, VCC = +2.7 to +3.6V. These characteristics are guaranteed by either production test or
design. They apply within the specified ambient temperature and supply voltage ranges unless otherwise stated.
Unless otherwise stated the frequencies used for measurements are to be.
1900MHz Signal Path: RF = 1960MHz, LO = 1749.62MHz, IF = 210.38MHz.

Characteristic Value Units Conditions

Min Typ Max

1900MHz Signal Path Input = RF 1900

Output =CDMA IF and CDMA IFB

Overall Power Gain, RF input to IF 8 9 10 dB LO= -10dBm from a 50 Ohm source
output

Noise Figure 9 11 dB Total to IF outputs (SSB).
Input third order intercept point 4 dBm

RF Input impedance 50 Ohm With simple external matchin

network. Matching network must
include an inductor connected
between the RF 1900 pin and GND.

RF port Return Loss 15 dB With simple external matching

network. Matching network mus
include an inductor connected
between the RF 1900 pin and GND

RF Frequency 1800 2000 MHz
IF Frequency 50 250 MHz

Input 1dB compression -10 dBm
Load impedance 1000 Ω Differential.Will require an

external resistor and a simple
external matching network.

5

Preliminary Information VENUS-L

Electrical Characteristics (AC specification ) Continued

T

AMB

= -30°C to +70°C, VCC = +2.7 to +3.6V. These characteristics are guaranteed by either production test or
design. They apply within the specified ambient temperature and supply voltage ranges unless otherwise stated.
Unless otherwise stated the frequencies used for measurements are to be.
900MHz Signal Path: RF = 881.5MHz, LO = 966.88MHz, IF = 85.38MHz.

Characteristic Value Units Conditions

Min Typ Max

900MHz Signal Path Input=RF 900 Output=AMPS IF

and AMPS IFB

Overall Power Gain, RF input to IF 7 8 9 dB LO= -10dBm from a 50ohm

source

output
Noise Figure 9 11 dB Total to IF outputs (SSB).

Input third order intercept point 5 dBm
RF Input impedance 50 Ohm With simple external matching

network. Matching network must
include an inductor connected
between the RF 900 pin and GND.

Return Loss 15 dB With simple external matching

network. Matching network must
include an inductor connected
between the RF 900 pin and GND

RF Frequency 800 1000 MHz
IF Frequency 50 250 MHz

Input 1dB compression -8 dBm

Load impedance 850 Ω Differential. Will require an

externa lresistor and a simple
external matching network.

RF LO BUFFERS

LO feedthrough to IF outputs -30 dBm
LO feedthrough to RF inputs -40 dBm
LO input level -10 -5 dBm
LO input impedance 50 Ω With simple external matching

network

LO port Return Loss 15 dB With simple external matching

network

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Mitel Semiconductor is an ISO 9001 Registered Company
Copyright 1999 MITEL Corporation
All Rights Reserved
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