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C-8 01/99
VCR2N, VCR4N, VCR7N
N-Channel Silicon Voltage Controlled Resistor JFET
¥ Small Signal Attenuators
¥ Filters
¥ Amplifier Gain Control
¥ Oscillator Amplitude Control
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage V
Gate Reverse Current I
Gate Source Cutoff Voltage V
Dynamic Electrical Characteristics
Drain Source ON Resistance r
Drain Gate Capacitance C
Source Gate Capacitance C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage V
Gate Reverse Current I
Gate Source Cutoff Voltage V
Dynamic Electrical Characteristics
Drain Source ON Resistance r
Drain Gate Capacitance C
Source Gate Capacitance C
(BR)GSS
GSS
GS(OFF)
ds(on)
dg
sg
(BR)GSS
GSS
GS(OFF)
ds(on)
dg
sg
Absolute maximum ratings at TA= 25¡C.
Reverse Gate Source & Reverse Gate Drain Voltage – 15 V
Continuous Forward Gate Current 10 mA
Continuous Device Power Dissipation 300 mW
Power Derating 2.4 mW/°C
VCR2N VCR4N
NJ72 NJ16 Process
Min Max Min Max Unit Test Conditions
– 15 – 15 V IG= – 1 µA, VDS= ØV
– 5 – 0.2 nA VGS= – 15V, VDS= ØV
– 1 – 3.5 – 3.5 – 7 V ID= – 1 µA, VDS= 10V
20 60 200 600 Ω VGS= ØV, ID= ØA f = 1 kHz
7.5 3 pF VDG= 10V, IS= ØA f = 1 MHz
7.5 3 pF VDG= 10V, ID= ØA f = 1 MHz
VCR7N
NJ01 Process
Min Max Unit Test Conditions
– 15 V IG= – 1 µA, VDS= ØV
– 0.1 nA VGS= – 15V, VDS= ØV
– 2.5 – 5 V ID= – 1 µA, VDS= 10V
4000 8000 Ω VGS= ØV, ID= ØA f = 1 kHz
1.5 pF VDG= 10V, IS= ØA f = 1 MHz
1.5 pF VDG= 10V, ID= ØA f = 1 MHz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
VCR2N & VCR4N
TOÐ18 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
VCR7N
TOÐ72 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
www.interfet.com
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