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01/99 C-9
VCR3P
P-Channel Silicon Voltage Controlled Resistor JFET
¥ Small Signal Attenuators
¥ Filters
¥ Amplifier Gain Control
¥ Oscillator Amplitude Control
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage V
Gate Reverse Current I
Gate Source Cutoff Voltage V
Dynamic Electrical Characteristics
Drain Source ON Resistance r
Drain Gate Capacitance C
Source Gate Capacitance C
(BR)GSS
GSS
GS(OFF)
ds(on)
dg
sg
Absolute maximum ratings at TA= 5¡C.
Reverse Gate Source & Reverse Gate Drain Voltage 15 V
Continuous Forward Gate Current 10 mA
Continuous Device Power Dissipation 300 mW
Power Derating 2.4 mW/°C
VCR3P Process PJ99
Min Max Unit Test Conditions
15 V IG= 1 µA, VDS= ØV
20 nA VGS= 15V, VDS= ØV
15VI
70 200 Ω VGS= ØV, ID= ØA f = 1 kHz
25 pF VDG= 10V, IS= ØA f = 1 MHz
15 pF VGS= 10V, ID= ØA f = 1 MHz
= – 1 µA, VDS= – 10V
D
TOÐ18 Package
Dimensions in Inches (mm)
www.interfet.com
Pin Configuration
1 Source, 2 Gate & Case, 3 Drain
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
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