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C-10 01/99
VCR11N
N-Channel Silicon Voltage Controlled Resistor JFET
¥ Small Signal Attenuators
¥ Filters
¥ Amplifier Gain Control
¥ Oscillator Amplitude Control
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage V
Gate Reverse Current I
Gate Source Cutoff Voltage V
Static Drain Source ON Resistance Ratio
Dynamic Electrical Characteristics
Drain Source ON Resistance r
Drain Gate Capacitance C
Source Gate Capacitance C
(BR)GSS
GSS
GS(OFF)
r
DS(MIN)
r
DS(MAX)
ds(on)
dg
sg
Absolute maximum ratings at TA= 25¡C.
Reverse Gate Source & Reverse Gate Drain Voltage – 15 V
Continuous Forward Gate Current 10 mA
Continuous Device Power Dissipation 300 mW
Power Derating 2.4 mW/°C
VCR11N Process NJ26
Min Max Unit Test Conditions
– 25 V IG= – 1 µA, VDS= ØV
– 0.2 nA VGS= – 15V, VDS= ØV
– 8 – 12 V ID= 1 µA, VDS= – 10V
.95 1 VDS= 100mV, r
.95 1 V
70 200 Ω VGS= ØV, ID= ØA f = 1 kHz
7.5 pF VDG= 10V, IS= ØA f = 1 MHz
7.5 pF VGS= 10V, ID= ØA f = 1 MHz
GS1
= V
GS2
= 200Ω
DS1
, r
= 2 kΩ
DS1
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
TOÐ71 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source , 2 Drain 1, 3 Gate 1,
5 Source 2, 6 Drain 2, 7 Gate 2
www.interfet.com
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