The µPG155TB is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital
cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low
insertion loss. It housed in an original 6-pin super minimold package that is smaller than usual 6-pin minimold easy
to install and contributes to miniaturizing the system.
FEATURES
• Low Insertion Loss: L
• High Linearity Switching: P
• Small 6-pin super minimold package (Size: 2.0 × 1.25 × 0.9 mm)
INS
= 0.75 dB TYP. @V
in (1 dB)
= +34 dBm TYP. @V
CONT
= +3.0 V/0 V, f = 2 GHz
CONT
= +3.0 V/0 V, f = 2 GHz
APPLICATIONS
• L, S-band digital cellular or cordless telephone
• PCS, WLAN, and WLL applications
ORDERING INFORMATION
Part NumberMarkingPackageSupplying Form
µ
PG155TB-E3G1L6-pin super minimoldEmbossed tape 8 mm wide.
Pin 1, 2, 3 face to tape perf oration side.
Qty 3 kp/reel.
Remark
To order evaluation samples, please contact your local NEC sales office. (Part number for sample
order:
PG155TB)
µ
Caution The IC must be handled with care to prevent static discharge because its circuit is composed of
GaAs MES FET.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P13654EJ2V0DS00 (2nd edition)
Date Published November 1999 N CP(K)
Printed in Japan
Control Voltage 1, 2V
Input PowerP
Total Power Dissipat i onP
Operating TemperatureT
Storage TemperatureT
Condition 2.5 ≤ | V
Note
Remarks 1.
Mounted on a 50 × 50 × 1.6 mm double copper clad epoxy glass PWB, T
Operation in excess of any one of these parameters may result in permanent damage.
2.
CONT1
PIN CONNECTIONS
Pin No.ConnectionPin No.Connection
1OUT14V
2GND5 IN
3OUT26V
CONT2
CONT1
C)
°°°°
–6.0 to +6.0
Note
+34dBm
0.15W
–45 to +85
–55 to +150
(Top View)(Bottom View)
34
25
16
V
C
°
C
°
A
G1L
= +85°C
43
52
61
RECOMMENDED OPERATING CONDITIONS (TA = +25
ParameterSymbolMIN.TYP.MAX.Unit
Control Voltage (Low)V
Control Voltage (High)V
CONT
CONT
–0.20+0.2V
+2.5+3.0+5.3V
C)
°°°°
2
Data Sheet P13654EJ2V0DS00
Page 3
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, TA = +25°C, V
Off chip DC blocking capacitors value; 51 pF)
ParameterS ymbolTest ConditionsMIN.TYP.MAX.Unit
CONT1
= 3 V, V
CONT2
= 0 V or V
CONT1
= 0 V, V
CONT2
= 3 V, ZO = 50
µµµµ
PG155TB
Ω
Insertion LossL
INS
IsolationISL
Input Return LossRL
Output Return LossRL
Input Power at 0.1 dB
Compression Point
Input Power at 1 dB
Compression Point
Note 2
Note 2
Switching Speedt
Control CurrentI
Notes 1.
Characteristic for reference at f = 2.0 to 2.5 GHz
in (0.1 dB)
P
2.
or P
in (0.1 dB)
P
in (1 dB)
P
sw
CONT
in (1 dB)
is measured the input power level when the insertion loss increases more 0.1 dB or
1 dB than that of linear range. All other characteristics are measured in linear range.
f = 100 M to 1.0 GHz
f = 2.0 GHz
f = 2.5 GHz
f = 100 M to 2.0 GHz1316
f = 2.5 GHz
f = 1.0 GHz1821.5
in
f = 100 M to 2.0 GHz1115
out
f = 100 M to 2.0 GHz1115
f = 2.0 GHz
f = 2.0 GHz3234
CONT
V
= 3 V/0 V
−
−
−
0.600.8
0.751.0
Note 1
0.90
−
−
Note 1
−
10
−
dB
dB
−
−
−
−
30.5
−
−
−
−
30
2050
−
dB
dB
dBm
dBm
ns
A
µ
Cautions 1. When the
No.3 (OUT2) and No.5 (IN). The value of DC blocking capacitors should be chosen to
accommodate the frequency of operation, band width, switching speed and the condition
with actual board of your system.
The range of recommended DC blocking capacitor value is less than 100 pF.
2. The distance between IC’s GND pin and ground pattern of substrate should be as shorter as
possible to avoid parasitic parameters.
PG155TB is used, it is necessary to use DC blocking capacitors for No.1 (OUT1),
µµµµ
Data Sheet P13654EJ2V0DS00
3
Page 4
TYPICAL CHARACTERISTICS (ON)
µµµµ
PG155TB
TEST CONDITIONS: V
IN-OUT1 INPUT RETURN LOSS vs. FREQUENCY
CH1 S1110 dB/REF 0 dB
MARKER 1
1 GHz
0
–10
–20
Input Return Loss RLin (dB)
–30
–40
CONT
IN
1
= 3 V/0 V, Pin = 0 dBm, TA = +25°C
OUT1
OUT2
50 Ω
–23.361 dB
1:
2:
3:
4:
2
3
1 GHz
–25.86 dB
1.5 GHz
–23.513 dB
2 GHz
–15.758 dB
2.5 GHz
4
Isolation ISL (dB)
IN-OUT1 ISOLATION vs. FREQUENCY
CH1 S12 log MAGlog MAG10 dB/REF 0 dB
MARKER 1
1 GHz
0
–10
–20
–30
–40
1
2
3
1:
–22.041 dB
2:
–18.211 dB
3:
–15.377 dB
4:
–14.159 dB
4
1 GHz
1.5 GHz
2 GHz
2.5 GHz
START 0.300 000 000 GHz
Frequency f (GHz)
IN-OUT1 INSERTION LOSS vs. FREQUENCY
CH1 S21 log MAG1 dB/REF 0 dB
MARKER 1
1 GHz
0
–1
–2
Insertion Loss LINS (dB)
–3
–4
START 0.300 000 000 GHz
1
Frequency f (GHz)
STOP 3.300 000 000 GHz
1:
2:
3:
4:
2
3
STOP 3.300 000 000 GHz
–0.959 dB
1 GHz
–1.078 dB
1.5 GHz
–1.255 dB
2 GHz
–1.618 dB
2.5 GHz
4
4
Caution This data is including loss of the test fixture.
START 0.300 000 000 GHz
Frequency f (GHz)
IN-OUT1 OUTPUT RETURN LOSS vs. FREQUENCY
CH1 S22 log MAG10 dB/REF 0 dB
MARKER 1
1 GHz
0
–10
–20
–30
Output Return Loss RLout (dB)
–40
START 0.300 000 000 GHz
1
Frequency f (GHz)
STOP 3.300 000 000 GHz
1:
2:
3:
4:
3
2
STOP 3.300 000 000 GHz
–24.263 dB
–34.835 dB
–25.152 dB
–15.675 dB
4
4
1 GHz
1.5 GHz
2 GHz
2.5 GHz
4
Data Sheet P13654EJ2V0DS00
Page 5
TYPICAL CHARACTERISTICS (OFF)
µµµµ
PG155TB
TEST CONDITIONS: V
IN-OUT1 INPUT RETURN LOSS vs. FREQUENCY
CH1 S11 log MAG10 dB/REF 0 dB
MARKER 1
1 GHz
0
–10
–20
Input Return Loss RLin (dB)
–30
–40
CONT1
IN
1
2
= V
CONT2
= 3 V/3 V, Pin = 0 dBm, TA = +25°C
OUT1
OUT2
50 Ω
–11.777 dB
1:
1 GHz
–11.405 dB
2:
1.5 GHz
–11.344 dB
3:
2 GHz
–10.281 dB
4:
2.5 GHz
4
3
START 0.300 000 000 GHz
Frequency f (GHz)
IN-OUT1 INSERTION LOSS vs. FREQUENCY
CH1 S21 log MAG10 dB/REF 0 dB
MARKER 1
1 GHz
0
–10
–20
Insertion Loss LINS (dB)
–30
–40
START 0.300 000 000 GHz
1
Frequency f (GHz)
STOP 3.300 000 000 GHz
1:
2:
3:
4:
2
3
STOP 3.300 000 000 GHz
–4.392 dB
1 GHz
–4.417 dB
1.5 GHz
–4.447 dB
2 GHz
–4.594 dB
2.5 GHz
4
Caution This data is including loss of the test fixture.
IN-OUT1 OUTPUT RETURN LOSS vs. FREQUENCY
CH1 S22 log MAG10 dB/REF 0 dB
–14.144 dB
1:
–13.091 dB
2:
–12.966 dB
MARKER 1
1 GHz
0
–10
–20
–30
Output Return Loss RLout (dB)
–40
START 0.300 000 000 GHz
1
2
Frequency f (GHz)
3:
–14.503 dB
4:
3
4
STOP 3.300 000 000 GHz
1 GHz
1.5 GHz
2 GHz
2.5 GHz
Data Sheet P13654EJ2V0DS00
5
Page 6
TEST CIRCUIT
PPPP
PG155TB
A
= +25qC, V
T
CONT1
= +3 V, V
CONT2
= 0 V or V
CONT1
= 0 V, V
CONT2
= +3 V, f = 2 GHz, ZO = 50
:
Off chip DC blocking capacitors value: C0 = 51 pF, C1 = 1 000 pF (Bypass), using NEC standard evaluation board
OUT1
C0
OUT2
C0
321
G1L
456
V
C1
CONT2
C1
CONT1
C0
INV
EVALUATION BOARD
OUT1
CONT1
V
IN
OUT2
CONT2
V
6
Data Sheet P13654EJ2V0DS00
Page 7
TRUTH TABLE OF SWITCHING BY CONDITION OF CONTROL VOLTAGE
CONT1
V
CONT(H)
V
CONT(L)
V
µµµµ
PG155TB
CONT2
V
Note
CONT(H)
V
CONT(L)
V
In case of V
CONT1
= V
input signal of IN (Pin 5) is output from OUT1 (Pin 1) and OUT2 (Pin 3).
PACKAGE DIMENSIONS
6 PIN MINIMOLD (Unit: mm)
IN
IN
CONT2
= High or V
+0.1
0.2
–0
CONT1
OUT1
OUT2
OUT1
OUT2
= V
Note
OUT1
IN
OUT2
Note
OUT1
IN
OUT2
CONT2
= Low, (that is same control voltage for both pins),
+0.1
0.15
–0
2.1 ±0.1
1.25 ±0.1
0.650.65
1.3
2.0 ±0.2
0.1 MIN.
0 to 0.1
0.7
0.9 ±0.1
Data Sheet P13654EJ2V0DS00
7
Page 8
µµµµ
PG155TB
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions. For soldering method and
conditions other than those recommended below, contact your NEC sales representative.
Soldering MethodSoldering ConditionsRecommended Condition Symbol
Infrared ReflowPackage peak temperature: 235°C or below
Time: 30 seconds or less (at 210°C)
Count: 3, Exposure limi t: None
VPSPac kage peak temperature: 215°C or below
Time: 40 seconds or less (at 200°C)
Count: 3, Exposure limi t: None
Wave SolderingSoldering bath temperature: 260°C or below
Time: 10 seconds or less
Count: 1, Exposure limi t: None
Partial HeatingPin temperature: 300°C
Time: 3 seconds or less (per pi n row)
Exposure limit: None
After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period.
Note
Note
Note
Note
Note
Caution Do not use different soldering methods together (except for partial heating).
IR35-00-3
VP15-00-3
WS60-00-1
–
8
Data Sheet P13654EJ2V0DS00
Page 9
[MEMO]
µµµµ
PG155TB
Data Sheet P13654EJ2V0DS00
9
Page 10
[MEMO]
µµµµ
PG155TB
10
Data Sheet P13654EJ2V0DS00
Page 11
[MEMO]
µµµµ
PG155TB
Data Sheet P13654EJ2V0DS00
11
Page 12
µµµµ
PG155TB
Caution
The Great Care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the law concerned.
Keep the law concerned and so on, especially in case of removal.
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8
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