
 # 580 Pleasant Street 
 Watertown, MA 02472 
 Phone:(617) 926-0404 
 F A X : (617) 924-1235
Features
POWERMITE 3 Surface Mount Package
•
MOSFET with Schottky Rectifier for reverse voltage blocking
•
Single 3 leaded device replaces 2 individual components
•
Integral Heat Sink / Locking Tabs
•
Supplied in 16mm Tape and Reel – 6000 units/reel
•
Superior Low Thermal and Electrical capability
•
 UPFS320P
  SURFACE MOUNT 
     P – CHANNEL 
      MOSKEY 
Mechanical Characteristics
Footprint Area of 16.51 mm
•
Case: Molded Epoxy
•
Meets UL94VO at 1/8 inch
•
Weight: 72 milligrams
•
Lead and Mounting Temperatures: 260
•
2
C max for 10 seconds
°°°°
Description
The MOSK EY 
fier to provide reverse blocking capability in a single three 
 leaded package. This device is well suited for applications 
such as battery chargers and switching where the intrinsic 
source-drain diode is an undesirable feature.
                                                         Note: Vks = Vds (Mosfet) + Vf (Rectifier)
Absolute Maximum Ratings at 25°C
RATING                    SYMBOL       VALUE        
Cathode-to-Source Voltage     VKSS         +/- 20          
Gate-to-Source Voltage         VGS          +/- 8          Vdc 
Cathode Current: 
  Continuous @ TA=25 
  Single Pulsed               IKM          11.0           
Total Power Dissipation        PD (1)          
Storage Temperature           T stg       
Operating Temperature         
 combines a MOSFET with a Schottky Recti-
C       
°°°°
IK            3.0           Adc
2.0           Watts
-55 to 150
T op       -55 to 150
UNIT
Apk
C        C
°°°°
C        C
°°°°
Vdc
Thermal Characteristics
Thermal Resistance: 
  Junction to Tab             Rjtab           5          
  (1)Junction-to-tab           Rja (1)          60          
  (2)Junction-to-ambient       Rja (2)         120          
     (1) Mounted on 2” square by 0.06’ thick FR4 board with a 1” x1” square 2 ounce copper pattern.
 (2) Mounted on 0.06 thick FR4 board, using recommended footprint, with 2 ounce copper
MSC 02-17-00 
PRELIMINARY
C/Watt
°°°°
C/Watt
°°°°
C/Watt
°°°°

 UPFS320P
Electrical Characteristics at 25°C
ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) 
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS 
BVKSS Cathode-Source Breakdown Voltage VGS= 0V; IK = 250uA 20 V 
IKSSF Zero Gate Voltage Cathode Current:
Forward
IKSSR Zero Gate Voltage Cathode
Current:Reverse 
IGSS Gate-Body Leakage Current VGS= +/- 8V, VDS = 0V 100 nA 
      ON CHARACTERISTICS (pulsed 500us max, duty cycle < 2%) 
VGS(TH) Gate Threshold Voltage VDS > VGS; IK = 250uA 0.4 0.6 1 V 
DELTA 
VGS(TH)/
Gate Threshold Voltage Temp
Coefficient 
TJ 
VKS (ON) Static Cathode-Source On Voltage VGS = 4.5 V; IK = 3A 700 mV
VKS (ON) Static Cathode-Source On Voltage VGS = 4.5 ; IK = 1A 400 mV 
IK(ON) On State Cathode Current VGS = 4.5 V; VKS = 5V 10 A 
Gfs Forward Transconductance VDS = 10 V; IK = 3 A 6.5 S 
      DYNAMIC CHARACTERISTICS 
Ciss Input Capacitance VKS = 10 V; VGS = 0V, F = 1 MHz 700 pF 
Coss Output Capacitance VKS = 10 V; VGS = 0V, F = 1MHz 270 pF 
Crss Reverse Transfer Capacitance VKS = 10 V; VGS = 0V, F = 1MHz 100 pF
SWITCHING CHARACTERISTICS
Td
(ON)
Turn On Delay Time 
Tr Turn On Rise Time 
Td
(OFF)
Turn Off Delay time 
Tf Turn Off Fall time 
Qg Total Gate Charge VDS = 5V, IK = 3A, VGS = 4.5V 9.5 13 nC 
Qgs Gate-Source Charge VDS = 5V, IK = 3A, VGS = 4.5V 1.3 nC 
Qgd Gate-Cathode Charge VDS = 5V, IK = 3A, VGS = 4.5V 2.2 nC
VKS= -16V, VGS = 0V 1 uA
VKS= +16V, VGS = 0V 1.5 mA
IK = 250uA, Reference to 25C 2.1 mV/C
VDD = 5V, IK = 1A, VGS = 4.5V, Rg = 6 
VDD = 5V, IK = 1A, VGS = 4.5V, Rg = 6 
VDD = 5V, IK = 1A, VGS = 4.5V, Rg = 6 
VDD = 5V, IK = 1A, VGS = 4.5V, Rg = 6 
ΩΩΩΩ 
ΩΩΩΩ 
ΩΩΩΩ 
ΩΩΩΩ
816 ns 
24 38 ns 
50 80 ns 
29 45 ns
MSC 02-17-00 
PRELIMINARY

 UPFS320P
                                 MECHANICAL SPECIFICATIONS
MSC 02-17-00 
PRELIMINARY