
UPF1N50 
WATERTOWN DIVISION 
DESCRIPTION
DESCRIPTION  
DESCRIPTIONDESCRIPTION
SURFACE MOUNT N CHANNEL MOSFET
Power MOSFET in ultra low profile patented Powermite 3(TM) package 
provides the designer with the best combination of fast Switching, 
ruggedized device design, low on-resistance, cost effectiveness in the 
industry's smallest high power surface mount package. 
T he U PF 1N 50 is ide al for ultra sma ll motor contr ol and switch m ode powe r 
supply applications. 
The Powermite 3 is designed for surface mounting using vapor phase, 
infrared, or wave soldering techniques. With power dissipation levels up to 
1.8 Watts, the Powermite 3 offers similar power handling capability to device 
4 times its size by using a patented full metal wrap around bottom.
IMPORTANT:
For the most current data, consult 
MICROSEMI
’s website: 
http://www.microsemi.com
MECHANICAL CHARACTER
MECHANICAL CHARACTERISTICS
POWERMITE 3 Surface Mount Package 
• Footprint Area of 16.51 mm
• Case: Molded Epoxy 
• Meets UL94VO at 1/8 inch 
• Weight: 72 milligrams 
• Lead and Mounting Temperatures: 260 
MECHANICAL CHARACTERMECHANICAL CHARACTER
2
0
C max for 10 seconds
ISTICS  
ISTICSISTICS
MAXIMUM RATINGS
MAXIMUM RATINGS  
PARAMETER 
Drain-to-Source Voltage  V
Drain-to-Source Voltage  V 
Continuous Drain Current @ TC = 25ºC  I 
Continuous Drain Current @ TC = 100ºC I 
Operating & Storage Junction Temperature Range  T
Total Power Dissipa tion  PD (1)  1.8  Watts
MAXIMUM RATINGSMAXIMUM RATINGS
SYMBOL
DSS 
GS 
D1 
D2 
J, TSTG 
VALUE
500 Volts
+/-20 Volts
1.0 Amps
0.8 Amps
- 40 to + 125 
THERMAL CHARACTERIST
THERMAL CHARACTERISTICS
S
TEADY-STATE THERMAL RESISTANCE
Junction-to-Tab Rθ 
(1) Junction-to-ambient  RθJA (1)  55  °C/Watt s  
(2) Junction-to-ambient  RθJA (2)  120  °C/Watt s 
(1) Mounted on 2” square by 0.06’ thick FR4 board with a 1”× 1” square 2-ounce copper pattern. 
(2) Mounted on 0.06’ thick FR4 boa rd, using recommended footprint.
THERMAL CHARACTERISTTHERMAL CHARACTERIST
:
SYMBOL
J-TAB 
ICS  
ICSICS
VALUE
2.0  °C/Watt s 
PRELIMINARY 
UNIT
ºC 
UNIT
 KEY FEATURES
 KEY FEATURES  
 KEY FEATURES KEY FEATURES
!"POWERMI TE 3 Surface Mount 
Package 
!"Low On-State Resistance  
!"High Frequency Switching  
!"Ultra Low Leakage current  
!"Integral Heat Sink / Locking 
Tabs 
!"Supplied in 16mm Tape and 
Reel – 6000 units/reel 
!"Superior Low Therma l And 
Electrical capability
  APPLICATIONS/BENEFIT
APPLICATIONS/BENEFITSSSS  
APPLICATIONS/BENEFITAPPLICATIONS/BENEFIT
• Motor Control 
• Switch Mode Power Supplies
WWW.
Microsemi 
.
COM
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Copyright  2000 
MSC1541.PDF 2000-08-08 
Microsemi 
W atertown Division 
580 Pleasant Street, Watertown, MA. 02472, 617-926-0404, Fax: 617-924-1235 
Page 1

UPF1N50 
WATERTOWN DIVISION 
STATIC ELECTRICAL CH
STATIC ELECTRICAL CHARACTERISTICS
SYMBOL  CHARACTERISTICS / TEST CONDITIONS 
BV
V
GS(TH)2
V
GS(TH)1
R
DS(ON)1
I
DSS1
I
DSS2
I
GSS1
SYMBOL
Ciss 
Coss 
Crss 
Qg 
Qgs 
Qgd 
td (on) 
tr 
td 
tf 
VSD 
trr 
Qrr 
Drain to Source Breakdown Voltage               (VGS=0V, ID=0.25mA)
DSS
Gate Threshold Voltage                  (VDS≥VGS, ID=1mA, TJ=37°C ) 
Gate Threshold Voltage                  (VDS≥VGS, ID=1mA, TJ=25°C ) 
Drain to Source ON-State Resistance      (VGS=10V, ID=1.0A , TJ=25°C ) 
Zero Gate Voltage-Drain Current          (VDS=400V,VGS=0V,TJ= 25°C ) 
Zero Gate Voltage-Drain Current          (VDS=400V,VGS=0V,TJ=125°C ) 
Gate to Source Leakage Current        (VGS= ±20V, VDS=0V, TJ = 25°C ) 
Input Capacitance 
Output Capacitance
Reverse Transfer Capacitance  f = 1MHZ 
Total Gate Charge 
Gate to Source Charge  
Gate to Drain Charge 
Turn-ON Delay Time 
Rise Time  VGS= 10 V, VDS= 0.5 BV 
Turn-OFF Delay Time  ID = 20 mA 
Fall Time 
Diode Forward Voltage 
Reverse Recovery Time  IS = 1 A, dIs/dt = 100 A/us 
Reverse Recovery Charge  IS = 1 A, dIs/dt = 100 A/us 
CHARACTERISTIC
STATIC ELECTRICAL CHSTATIC ELECTRICAL CH
STATIC ELECTRICAL CH
STATIC ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHSTATIC ELECTRICAL CH
VGS= 0 V 
V
= 50 V
DS
= 10 V 
V
GS
= 0.5 V
V
DS
ID= 10 mA 
Resistive Switching (25°C)
Rg = 1.6 Ω  
V
= 0 V, IS = 1 A, TJ = 25°C 
GS
SURFACE MOUNT N CHANNEL MOSFET
PRELIMINARY 
ARACTERISTICS  
ARACTERISTICSARACTERISTICS
ARACTERISTICS  
ARACTERISTICSARACTERISTICS
TEST CONDITIONS
DSS 
DSS
UPF1N50 
Min Typ Max 
500 
2.0 3.4 4.0 Volts 
 3.5  Volts 
 2 uA 
 250 uA 
2.7 3.5 Ohms 
±
100 
Min Typ Max UNIT 
 200 
30 
 15 20 pF 
 20 
1.0 
10 
 20 ns 
 10 ns 
 30 ns 
 30 us 
 0.85 1.2 V 
 150 ns 
 0.8 uC 
Units 
Volts 
250 
50 
 nC 
nA 
pF 
pF 
nC 
nC 
WWW.
Microsemi 
.
COM
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Copyright  2000 
MSC1541.PDF 2000-08-08 
Microsemi 
W atertown Division 
580 Pleasant Street, Watertown, MA. 02472, 617-926-0404, Fax: 617-924-1235 
Page 

UPF1N50 
WATERTOWN DIVISION 
SURFACE MOUNT N CHANNEL MOSFET
PRELIMINARY 
WWW.
Microsemi 
.
COM
Copyright  2000 
MSC1541.PDF 2000-08-08 
MECHANICAL SPECIFICATIONS
Microsemi 
W atertown Division 
580 Pleasant Street, Watertown, MA. 02472, 617-926-0404, Fax: 617-924-1235 
Page 
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