Datasheet UPC2758TB-E3, UPC2758TB, UPC2758T-E3, UPC2757TB-E3, UPC2757TB Datasheet (NEC)

DATA SHEET

BIPOLAR ANALOG INTEGRATED CI RCUITS

PC2757TB,

µµµµ

PC2758TB

µµµµ

SILICON MMIC 1st FREQUENCY DOWN-CONVERTER

FOR CELLULAR/CORDLESS TELEPHONE

DESCRIPTION

The µPC2757TB and µPC2758TB are silicon monolithic integrated circuit designed as 1st frequency down-

converter for cellular/cordless telephone receiver stage. The ICs consist of mixer and local amplifier. The

PC2757TB features low current consumption and the µPC2758TB features improved intermodulation. From these

µ

two version, you can chose either IC corresponding to your system design. These TB suffix ICs which are smaller
package than conventional T suffix ICs contribute to reduce your system size.

The µPC2757TB and µPC2758TB are manufactured using NEC’s 20 GHz fT NESAT™||| silicon bipolar process.
This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from
external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.

FEATURES

• Wideband operation : f

• High-density surface mounting : 6-pin super minimold package

• Low current consumption : ICC = 5.6 mA TYP. @ µPC2757TB

• Supply voltage : VCC = 2.7 to 3.3 V

• Minimized carrier leakage : Due to double balanced mixer

• Equable output impedance : Single-end push-pull IF amplifier

• Built-in power save function

RFin

= 0.1 to 2.0 GHz, f

ICC = 11 mA TYP. @ µPC2758TB

IFin

= 20 to 300 MHz

APPLICATIONS

• Cellular/cordless telephone up to 2.0 GHz MAX. (example: GSM, PDC800M, PDC1.5G and so on): µPC2758TB

• Cellular/cordless telephone up to 2.0 GHz MAX. (example: CT1, CT2 and so on): µPC2757TB

ORDERING INFORMATION

Part Number Package Markings Supplying Form Product Type

µ

PC2757TB-E3 C1X Low current consumption

µ

PC2758TB-E3

Remark

Document No. P12771EJ2V0DS00 (2nd edition)
Date Published June 2000 N CP(K)
Printed in Japan

To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order:

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

6-pin
super
minimold

Embossed tape 8 mm wide.
Pin 1, 2, 3 face the tape perforation side.

C1Y

Caution Electro-static sensitive devices

The mark shows major revised points.

Qty 3kpcs/reel.

PC2757TB, µPC2758TB)

µ

High OIP

3

©

1997, 2000

PIN CONNECTIONS

µ

µµµµ

PC2757TB,

PC2757TB, µPC2758TB in common

µ

µµµµ

PC2758TB

(Top View)

3

2

1

Example marking is for PC2757TB

C1X

4

5

6

4

5

6

(Bottom View)

3

2

1

PRODUCT LINE-UP (TA = +25°C, VCC = 3.0 V, ZS = ZL = 50

Part No.

PC2757T

µ

PC2757TB

µ

PC2758T

µ

PC2758TB

µ

PC8112T

µ

PC8112TB

µ

Items

No RF

(mA)

900 MHz

CC

I

SSB · NF

(dB)

5.6101013151513−14

11 9 1013191817−13

8.5 9 11 11 15 13 13

1.5 GHz

SSB · NF

(dB)

1.9 GHz

SSB · NF

(dB)

900 MHz

CG

(dB)

Pin No. P i n Nam e

1 RFinput
2GND
3 LOinput
4PS
5V
6 IFoutput

)

ΩΩΩΩ

1.5 GHz
CG

(dB)

1.9 GHz

(dB)

900 MHz

CG

CC

IIP

(dBm)

10

−

3

1.5 GHz

3

IIP

(dBm)

14

−

12

−

9

−

1.9 GHz

3

IIP

(dBm)

12

−

11

−

7

−

Items

Part No.

PC2757T

µ

PC2757TB

µ

PC2758T

µ

PC2758TB

µ

PC8112T

µ

PC8112TB

µ

Remark

Caution The

900 MHz

O(sat)

P

(dBm)

3

−

+1

2.5

−

1.5 GHz
P

(dBm)

1.9 GHz

O(sat)

−−8−−−

−−4−−−

3

−

P

(dBm)

O(sat)

3

−

900 MHz

LO

RF

(dB)

80

−

1.5 GHz

LO

RF
(dB)

57

−

1.9 GHz

LO

RF

(dB)

55 Open collector

−

IF Output
Configuration

Emitter follower

Packages

6-pin minimold
6-pin super minimold
6-pin minimold
6-pin super minimold
6-pin minimold
6-pin super minimold

Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail.
To know the associated product, please refer to each latest data sheet.

PC2757 and

µµµµ

PC8112. On the other hand, OIP3 of Standard characteristics in page 6 is cross point IP.

µµµµ

PC2758’s IIP3 are calculated with

µµµµ

IM3 = 3 which is the same IM3 inclination as

∆∆∆∆

2

Data Sheet P12771EJ2V0DS00

µµµµ

PC2757TB,

µµµµ

PC2758TB

INTERNAL BLOCK DIAGRAM (

µµµµ

RF
input

PC2757TB,

SYSTEM APPLICATION EXAMPLE

DIGITAL CELLULAR TELEPHONE

Low noise Tr.

RX

LO
input

PC2758TB in common)

µµµµ

IF
output

GNDV

CC

PC2758TB

µ

POWER
SAVE

DEMOD.

I

Q

÷ N PLLVCO

PLL

0˚

φ

90˚

TX

SW

PA

To know the associated products, please refer to each latest data sheet.

I

Q

Data Sheet P12771EJ2V0DS00

3

µµµµ

PC2757TB,

µµµµ

PC2758TB

PIN EXPLANATION (Both

Pin
No.

Pin
Name

1 RFinput

2 GND GND – This pin is ground of IC.

3 LOinput – 1.3 This pin is LO input for local buffer

Applied
Voltage (V)

PC2757TB, 2758TB)

µµµµ

Pin Voltage

(V)

−

1.2 This pin is RF input for mixer

Note

Function and Application Internal Equivalent Circ ui t

designed as double balance type.
This circuit contri butes to suppress
spurious signal with mini m um LO
and bias power consumption.
Also this symmetrical circuit can
keep specified performanc e i ns ensi­tive to process-condi tion
distribution.

Must be connected to the system
ground with minimum inductanc e.
Ground pattern on the board should
be formed as wide as possible.
(Track length should be kept as
short as possible.)

designed as differential am pl i f i er.
Recommendable input level is –15
to 0 dBm. Also this symmetrical
circuit can keep spec i fied
performance insensitive to process­condition distribution.

From
LO

3

V

CC

To IF
Amp.

1

−

V

CC

Mixer

4PSV

5VCC2.7 to 3.3 – Supply voltage 3.0 ±0.3 V for

6 IFoutput – 1.7 This pi n i s output from IF buffer

Each pin voltage is measured with V

Note

CC

or GND – This pin is for power-save function.

This pin can control ON/OFF
operation with bias as follows;

Bias: V Operation

PS

V

Rise time/fall time using this pin are
approximately 10

operation. Must be connect ed
bypass capacitor. (example: 1 000
pF) to minimize ground impedance.

amplifier designed as singl e-ended
push-pull type. This pin i s assigned
for emitter follower output with low­impedance. In the case of
connecting to high-impedance
stage, please attach external
matching circuit.

CC

= 3.0 V

2.5 ON

≥

0 to 0.5 OFF

s.

µ

V

CC

4

−

V

CC

6

4

Data Sheet P12771EJ2V0DS00

ABSOLUTE MAXIMUM RATINGS

Parameter Symbol Conditions Ratings Unit

µµµµ

PC2757TB,

µµµµ

PC2758TB

Supply Voltage V
Power Dissipation of Package Allowance P

CC

TA = +25°C 5.5 V

D

Mounted on 50 × 50 × 1.6 mm
double sided copper clad epoxy

A

= +85°C
Operating Ambient Temperature T
Storage Temperature T
PS Pin Voltage V

stg

PS

glass board at T

A

TA = +25°C 5.5 V

RECOMMENDED OPERATING CONDITIONS

Parameter Symbol MIN. TYP. MAX. Unit
Supply Voltage V
Operating Ambient Temperature T
LO Input Level P

CC

LOin

2.7 3. 0 3.3 V

A

–40 +25 +85 °C
–15 –10 0 dBm

ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = VPS = 3.0 V, P

PC2757TB

Parameter Symbol Conditions

µ

MIN. TYP. MAX. MIN. TYP. MAX.

200 mW

–40 to +85 °C

–55 to +150 °C

LOin

= –10 dBm, ZS = ZL = 50

PC2758TB

µ

ΩΩΩΩ

Unit

)

Circuit Current I
RF Frequency

CC

RF

f

Response
IF Frequency

IF

f

Response
Conversion Gain 1 CG1 f

Conversion Gain 2 CG2 f

Single Sideband

SSB • NF1

Noise Figure 1
Single Sideband

SSB • NF2

Noise Figure 2
Saturated Output

P

O(sat)

1f

Power 1
Saturated Output

P

O(sat)

2f

Power 2

No input signal 3.7 5.6 7.7 6.6 11 14.8 mA
CG ≥ (CG1 –3 dB)

IFout

f

= 130 MHz constant

CG ≥ (CG1 –3 dB)

RFin

f

= 0.8 GHz constant

RFin

= 0.8 GHz, f

RFin

P

= –40 dBm, Upper local

RFin

= 2.0 GHz, f

RFin

P

= –40 dBm, Lower local

RFin

f

= 0.8 GHz, f

IFout

IFout

IFout

= 130 MHz

= 250 MHz

= 130 MHz,

0.1

20

−

−

2.0 0.1

300 20

−

−

2.0 GHz

300 MHz

12 15 18 16 19 22 dB

10 13 16 14 17 20 dB

−

10 13

−

912dB

SSB mode, Upper local

RFin

f

= 2.0 GHz, f

IFout

= 250 MHz,

−

13 16

13 15 dB

−

SSB mode, Lower local

RFin

= 0.8 GHz, f

RFin

P

= –10 dBm, Upper local

RFin

= 2.0 GHz, f

RFin

P

= –10 dBm, Lower local

IFout

= 130 MHz

IFout

= 250 MHz

–11 –3

–11 –8

−

−

–7 +1

–7 –4

dBm

−

dBm

−

Data Sheet P12771EJ2V0DS00

5

STANDARD CHARACTERISTICS FOR REFERENCE

A

(Unless otherwise specified: T

= +25°C, VCC = VPS = 3.0 V, P

µµµµ

PC2757TB,

LOin

= –10 dBm, ZS = ZL = 50

µµµµ

PC2758TB

)

ΩΩΩΩ

Parameter Symbol Conditions

Output 3rd Intercept Point OIP

LO Leakage at RF pin LO
LO Leakage at IF pin LO
Power-saving Current I

CC(PS)

Reference Value

PC2757TBµPC2758TB

µ

3

RFin

f

= 0.8 to 2.0 GHz, f

Cross point IP

rf

LOin

f

= 0.8 to 2.0 GHz –35 –30 dBm

if

LOin

f

= 0.8 to 2.0 GHz –23 –15 dBm

VPS = 0.5 V 0.1 0.1

IFout

= 0.1 GHz,

+5 +11 dBm

Unit

A

µ

6

Data Sheet P12771EJ2V0DS00

TEST CIRCUIT

µµµµ

PC2757TB,

µµµµ

PC2758TB

PC2757TB,

µµµµ

PC2758TB

µµµµ

Signal Generator

Signal Generator

(Top View)

1 000 pF

3

2

1

LOinput

GND

RFinput

50 Ω

50 Ω 50 Ω

C

2

1 000 pF

C

1

PS

V

CC

IFoutput

4

5

6

3 300 pF

C

3

3 300 pF

C

POWER

SAVE

3 V

4

Spectrum Analyzer

ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD

LO

input

C

3

C

2

PS bias

PS

RF

input

Component List

No. Value

1 to 2

C

3 to 5

C

C

1 000 pF
3 300 pF

GND

1

Notes 1.

35 × 42 × 0.4 mm double sided copper clad polyimide board.
Back side: GND pattern

2.

Solder plated on pattern

3.

: Through holes

{

4.

°

C

V

4

CC

→

Voltage supply

C

5

IF

output

APPLICATION

This IC is guaranteed on the test circuit constructed with 50 Ω equipment and transmission line.

This IC, however, does not have 50 Ω input/output impedance, but electrical characteristics such as conversion
gain and intermodulation distortion are described herein on these conditions without impedance matching. So, you
should understand that conversion gain and intermodulation distortion at input level will vary when you improve VS of
RF input with external circuit (50 Ω termination or impedance matching.)

Data Sheet P12771EJ2V0DS00

7

µµµµ

PC2757TB,

µµµµ

PC2758TB

TYPICAL CHARACTERISTICS (TA = +25

PC2757TB

−

µ

9
8
7

(mA)

6

CC

5
4
3
2

Circuit Current I

1
0

SSB NOISE FIGURE vs. RF INPUT FREQUENCY CONVERSION GAIN vs. IF OUTPUT FREQUENCY

15
14
13
12
11
10

9
8
7

SSB Noise Figure SSB • NF (dB)

6

1.4 1.6 1.8 2.0 2.2 2.4 2.6

−

CIRCUIT CURRENT vs. SUPPLY VOLTAGE CONVERSION GAIN vs. RF INPUT FREQUENCY

no signals
V

CC = VPS

0123456

Supply Voltage V

RF Input Frequency f

CC

(V)

V

CC

= V

P

RFin
LOin

P
f

IFout

= 130 MHz

RFin

(GHz)

PS

= –40 dBm
= –10 dBm

C, on Measurement Circuit)

°°°°

20

18

16

14

12

10

V

CC

Conversion Gain CG (dB)

= V

RFin

= –40 dBm

P

8

P

LOin

= –10 dBm

f

IFout

= 130 MHz

6

0 0.5 1.0 1.5 2.0 2.5

20

18

16

14

12

= 3.0 V

10

Conversion Gain CG (dB)

8

6

0 100 200 300 400 500 700600

IF Output Frequency f

PS

= 3.0 V

RF Input Frequency f

RFin

V
P
P

RFin

f

IFout

(GHz)

CC
RFin
LOin

(MHz)

= V

PS

= 3.0 V
= –40 dBm
= –10 dBm

= 800 MHz

25

20

15

10

5

Conversion Gain CG (dB)

0

–5

–50 –40 –30 –20 –10 0 10

8

CONVERSION GAIN vs. LO INPUT LEVEL CONVERSION GAIN vs. LO INPUT LEVEL

25

20

15

10

5

V

CC

= V

PS

LO Input Level P

f
f
P

LOin

RFin

= 900 MHz

LOin

= 800 MHz

RFin

= –40 dBm

(dBm)

= 3.0 V

Conversion Gain CG (dB)

–5

Data Sheet P12771EJ2V0DS00

0

–50 –40 –30 –20 –10 0 10

LO Input Level P

LOin

V

CC

f

RFin

f

LOin

P

RFin

(dBm)

= V

PS

= 3.0 V
= 2.0 GHz
= 1.9 GHz

= –40 dBm

PC2757TB

−

µ

µµµµ

PC2757TB,

µµµµ

PC2758TB

−

IF OUTPUT LEVEL, 3rd ORDER INTERMODULATION
DISTORTION vs. RF INPUT LEVEL

20

(dBm)

3

f

RFin

= 800 MHz

10

f

LOin

0

= 930 MHz

P

LOin

V

CC

= V

= –10 dBm

PS

= 3.0 V

(dBm)

IFout

–10
–20

P

–30

out

–40

IM

–50

3

–60
–70

3rd Order Intemodulation Distortion IM

IF Output Level of Each Tone P

–50 –45 –40 –35 –30 –25 –20 –15 –10 –5

RF Input Level P

RFin

(dBm)

IF OUTPUT LEVEL, 3rd ORDER INTERMODULATION
DISTORTION vs. RF INPUT LEVEL

20

(dBm)

3

f

RFin

= 2 GHz

10

f

LOin

0

= 1.75 GHz

P

LOin

= –10 dBm

V

CC

= V

PS

= 3.0 V

(dBm)

IFout

–10
–20

P

–30

out

–40

IM

–50

3

–60
–70

3rd Order Intemodulation Distortion IM

IF Output Level of Each Tone P

–50 –45 –40 –35 –30 –25 –20 –15 –10 –5

RF Input Level P

RFin

(dBm)

LO LEAKAGE AT RF PIN vs. LO INPUT FREQUENCY LO LEAKAGE AT IF PIN vs. LO INPUT FREQUENCY

–10
–15
–20

(dBm)

rf

–25
–30

P

LOin

V

CC

= –10 dBm

= V

PS

= 3.0 V

–10

–15

(dBm)

if

–20

–25

P

LOin

V

CC

= V

= –10 dBm

PS

= 3.0 V

–35
–40
–45

–30

–35

–50
–55

LO Leakage at RF Pin LO

–60

0 0.5 1 1.5 2 2.5

LO Input Frequency f

LOin

(GHz)

–40

LO Leakage at IF Pin LO

–45

0 0.5 1 1.5 2 2.5

LO Input Frequency f

LOin

(GHz)

Remark

The graphs indicate nominal characteristics.

Data Sheet P12771EJ2V0DS00

9

S-PARAMETERS

PC2757TB

−

µ

Calibrated on pin of DUT

−

µµµµ

PC2757TB,

µµµµ

PC2758TB

S

11

REF

1

hp

ZZ

1.0 Units

200.0 mUnits/

56.422 Ω –275.59 Ω
MARKER 1

500.0 MHz

RF PORT

CC

= V

PS

V

= 3.0V
1:500 MHz 56.422 Ω -j275.59 Ω
2:900 MHz 38.68 Ω -j152.71 Ω
3:1 500 MHz 31.699 Ω -j88.102 Ω
4:1 900 MHz 29.209 Ω -j65.926 Ω
5:2 500 MHz 29.209 Ω -j44.758 Ω

S

11

REF

1

hp

ZZ

1.0 Units

200.0 mUnits/

90.969 Ω –243.41 Ω
MARKER 1

500.0 MHz

5

3

4

START 0.050000000 GHz
STOP 3.000000000 GHz

S

11

1.0 Units

REF

1

200.0 mUnits/

104.03 Ω –413.42 Ω

hp

MARKER 1

500.0 MHz

1

2

1

2

3

4

5

RF PORT

CC

= 3.0V V

V
1:500 MHz 104.03 Ω -j413.42 Ω
2:900 MHz 74.82 Ω -j243.06 Ω

PS

= GND

START 0.050000000 GHz
STOP 3.000000000 GHz

3:1 500 MHz 59.266 Ω -j154.98 Ω
4:1 900 MHz 51.227 Ω -j124.55 Ω
5:2 500 MHz 43.996 Ω -j95.117 Ω

S

11

1.0 Units

REF

1

200.0 mUnits/

114.16 Ω –400.03 Ω

hp

MARKER 1

500.0 MHz

1

1

LO PORT
V

CC

= V

PS

= 3.0V
1:500 MHz 90.969 Ω -j243.41 Ω
2:900 MHz 67.828 Ω -j150.32 Ω
3:1 500 MHz 51.488 Ω -j97.273 Ω
4:1 900 MHz 44.621 Ω -j77.352 Ω
5:2 500 MHz 39.627 Ω -j56.738 Ω

S

22

REF

1

hp

ZZ

1.0 Units

200.0 mUnits/

19.146 Ω 7.2041 Ω
MARKER 1

130.0 MHz

IF PORT
V

CC

= V

PS

= 3.0V
1:130 MHz 19.146 Ω -j7.2041 Ω
2:250 MHz 22.73 Ω -j12.909 Ω

5

START 0.050000000 GHz
STOP 3.000000000 GHz

1

2

START 0.050000000 GHz
STOP 3.000000000 GHz

2

3

4

LO PORT
V

CC

= 3.0V V
1:500 MHz 114.16 Ω -j400.03 Ω
2:900 MHz 75.133 Ω -j242.73 Ω

PS

= GND

START 0.050000000 GHz
STOP 3.000000000 GHz

2

3

4

5

3:1 500 MHz 53.516 Ω -j154.21 Ω
4:1 900 MHz 44.789 Ω -j124.74 Ω
5:2 500 MHz 37.004 Ω -j93.828 Ω

S

22

1.0 Units

REF

1

200.0 mUnits/

066.38 Ω –1.3174 kΩ

hp

MARKER 1

130.0 MHz

1

2

IF PORT
V

CC

= 3.0V V
1:130 MHz 66.38 Ω -j1.3174 kΩ
2:250 MHz 88.281 Ω -j725.41 Ω

PS

= GND

START 0.050000000 GHz
STOP 3.000000000 GHz

10

Data Sheet P12771EJ2V0DS00

µµµµ

PC2757TB,

µµµµ

PC2758TB

TYPICAL CHARACTERISTICS (TA = +25

PC2758TB

−

µ

20

15

(mA)

CC

10

5

Circuit Current I

0

SSB NOISE FIGURE vs. RF INPUT FREQUENCY CONVERSION GAIN vs. IF OUTPUT FREQUENCY

20

15

10

SSB Noise Figure SSB • NF (dB)

5

0.0 0.5 1.0 1.5 2.0 2.5 3.0

−

CIRCUIT CURRENT vs. SUPPLY VOLTAGE CONVERSION GAIN vs. RF INPUT FREQUENCY

no signals

CC

= V

PS

V

0123456

Supply Voltage V

V

CC

= V

PS

= 3.0 V

RFin

= –40 dBm

P

LOin

= –10 dBm

P
f

IFout

= 130 MHz

RF Input Frequency f

CC

RFin

(V)

(GHz)

C, on Measurement Circuit)

°°°°

V

CC

= V

PS

RFin

= –40 dBm

LOin

= –10 dBm
= 130 MHz

= 3.0 V

24
22

P
P
f

IFout

20
18
16
14

Conversion Gain CG (dB)

12
10

0 0.5 1.0 1.5 2.0 3.02.5

RF Input Frequency f

20
19
18
17
16
15
14
13
12

Conversion Gain CG (dB)

11
10

0 100 200 300 400 500 600

IF Output Frequency f

RFin

(GHz)

V

CC

= V

RFin

P

LOin

P
f

RFin

= 800 MHz

IFout

(MHz)

PS

= 3.0 V
= –40 dBm
= –10 dBm

25

20

15

10

5

V

CC

= V

PS

Conversion Gain CG (dB)

0

–5

–50 –40 –30 –20 –10 0 10

LO Input Level P

LOin

RFin

f
f

LOin

P

= 3.0 V
= 800 MHz
= 930 MHz

RFin

= –40 dBm

(dBm)

Data Sheet P12771EJ2V0DS00

CONVERSION GAIN vs. LO INPUT LEVELCONVERSION GAIN vs. LO INPUT LEVEL

25

20

15

10

5

V

CC

= V

PS

Conversion Gain CG (dB)

0

–5

–50 –40 –30 –20 –10 0 10

LO Input Level P

LOin

RFin

f
f

LOin

P

= 2.0 GHz
= 1.9 GHz

RFin

= –40 dBm

(dBm)

= 3.0 V

11

PC2758TB

−

µ

µµµµ

PC2757TB,

µµµµ

PC2758TB

−

IF OUTPUT LEVEL, 3rd ORDER INTERMODULATION
DISTORTION vs. RF INPUT LEVEL

20

(dBm)

3

10

(dBm)

0

IFout

–10
–20
–30
–40

f

RF1

RFin

RF2

f
f

LO

P
V

(dBm)

= 800 MHz
= 805 MHz

= 900 MHz

LOin

= –10 dBm

CC

= V

PS

= 3.0 V

–50
–60
–70 –70
–80

3rd Order Intermodulation Distortion IM

IF Output Level of Each Tone P

RF Input Level P

IF OUTPUT LEVEL, 3rd ORDER INTERMODULATION
DISTORTION vs. RF INPUT LEVEL

20

(dBm)

3

10

(dBm)

0

IFout

–10
–20
–30
–40

f

RF1

RFin

RF2

f
f

LO

P

LOin
CC

V

(dBm)

= 2.0 GHz
= 2.005 GHz

= 1.9 GHz

= –10 dBm

= V

PS

–50
–60

–80

3rd Order Intermodulation Distortion IM

IF Output Level of Each Tone P

–50 –40 –30 –20 –10 0 10–50 –40 –30 –20 –10 0 10

RF Input Level P

LO LEAKAGE AT RF PIN vs. LO INPUT FREQUENCY LO LEAKAGE AT IF PIN vs. LO INPUT FREQUENCY

0

–10

(dBm)

rf

–20

–30

0

–10

(dBm)

if

–20

–30

= 3.0 V

–40

–50

LO Leakage at RF Pin LO

–60

LO Input Frequency f

Remark

The graphs indicate nominal characteristics.

P
V

LOin

LOin
CC

= –10 dBm

= V

PS

= 3.0 V

(GHz)

–40

–50

LO Leakage at IF Pin LO

–60

0 0.5 1.0 1.5 2.0 3.02.50 0.5 1.0 1.5 2.0 3.02.5

LO Input Frequency f

P
V

LOin

LOin
CC

= V

(GHz)

= –10 dBm

PS

= 3.0 V

12

Data Sheet P12771EJ2V0DS00

S-PARAMETERS

PC2758TB

−

µ

Calibrated on pin of DUT

−

µµµµ

PC2757TB,

µµµµ

PC2758TB

11

S
REF

1

hp

ZZ

1.0 Units

200.0 mUnits/

63.312 Ω –261.34 Ω
MARKER 1

500.0 MHz

RF PORT
V

CC = VPS = 3.0V

1:500 MHz 63.312 Ω -j261.34 Ω
2:900 MHz 40.227 Ω -j142.36 Ω
3:1 500 MHz 32.441 Ω -j79.68 Ω
4:1 900 MHz 31.107 Ω -j58.273 Ω
5:2 500 MHz 30.871 Ω -j39.08 Ω

11

S
REF

1

hp

ZZ

1.0 Units

200.0 mUnits/

73.398 Ω –188.13 Ω
MARKER 1

500.0 MHz

LO PORT
V

CC = VPS = 3.0V

1:500 MHz 73.398 Ω -j188.13 Ω
2:900 MHz 64.551 Ω -j112.66 Ω
3:1 500 MHz 53.133 Ω -j72.941 Ω
4:1 900 MHz 48.111 Ω -j57.307 Ω
5:2 500 MHz 44.541 Ω -j41.564 Ω

5

4

3

START 0.050000000 GHz
STOP 3.000000000 GHz

5

2

4

3

START 0.050000000 GHz
STOP 3.000000000 GHz

11

S

1.0 Units

REF

1

200.0 mUnits/

107.13 Ω –395.56 Ω

hp

MARKER 1

500.0 MHz

1

2

1

2

3

4

5

RF PORT
V

CC = 3.0V VPS = GND

1:500 MHz 107.13 Ω -j395.56 Ω
2:900 MHz 78.711 Ω -j234.41 Ω

START 0.050000000 GHz
STOP 3.000000000 GHz

3:1 500 MHz 61.922 Ω -j148.82 Ω
4:1 900 MHz 52.629 Ω -j119.55 Ω
5:2 500 MHz 44.766 Ω -j90.578 Ω

11

S

1.0 Units

REF

1

200.0 mUnits/

100.31 Ω –374.75 Ω

hp

MARKER 1

500.0 MHz

1

1

2

3

4

5

LO PORT
V

CC = 3.0V VPS = GND

1:500 MHz 100.31 Ω -j374.75 Ω
2:900 MHz 73.148 Ω -j223.07 Ω

START 0.050000000 GHz
STOP 3.000000000 GHz

3:1 500 MHz 57.719 Ω -j144.02 Ω
4:1 900 MHz 50.738 Ω -j119.52 Ω
5:2 500 MHz 41.836 Ω -j90.25 Ω

22

S
REF

1

hp

ZZ

1.0 Units

200.0 mUnits/

15.696 Ω 9.5011 Ω
MARKER 1

130.0 MHz

IF PORT
V

CC = VPS = 3.0V

1:130 MHz 15.696 Ω -j9.5811 Ω
2:250 MHz 21.4 Ω -j16.331 Ω

1

2

START 0.050000000 GHz
STOP 3.000000000 GHz

22

S

1.0 Units

REF

1

200.0 mUnits/

106.69 Ω –1.3425 kΩ

hp

IF PORT
V

CC = 3.0V VPS = GND

1:130 MHz 106.69 Ω -j1.3425 kΩ
2:250 MHz 83.75 Ω -j711.47 Ω

Data Sheet P12771EJ2V0DS00

MARKER 1

130.0 MHz

START 0.050000000 GHz
STOP 3.000000000 GHz

1

2

13

PACKAGE DIMENSIONS

6-pin super minimold (Unit: mm)

2.0±0.2

1.3

0.9±0.1

0.650.65

0.7

2.1±0.1

1.25±0.1

µµµµ

PC2757TB,

–0.05

+0.1

0.2

0.1 MIN.

–0

+0.1

0.15

µµµµ

PC2758TB

0 to 0.1

14

Data Sheet P12771EJ2V0DS00

µµµµ

PC2757TB,

µµµµ

PC2758TB

NOTE ON CORRECT USE

(1) Observe precautions for handling because of electrostatic sensitive devices.
(2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation).

Keep the track length of the ground pins as short as possible.
(3)ýConnect a bypass capacitor (e.g. 1 000 pF) to the VCC pin.
(4)ýThe DC cut capacitor must be attached to input pin.

RECOMMENDED SOLDERING CONDITIONS

This product should be soldered under the following recommended conditions. For soldering methods and

conditions other than those recommended below, contact your NEC sales representative.

Soldering Method Soldering Conditions

Infrared Reflow Package peak temperature: 235°C or bel ow

Time: 30 seconds or less (at 210°C)
Count: 3, Exposure limi t: None

VPS Package peak temperature: 215° C or bel ow

Time: 40 seconds or less (at 200°C)
Count: 3, Exposure limi t: None

Wave Soldering Soldering bath temperature: 260°C or below

Time: 10 seconds or less
Count: 1, Exposure limi t: None

Partial Heating Pin tem perat ure: 300°C

Time: 3 seconds or less (per side of device)
Exposure limit: None

After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period.

Note

Note

Note

Note

Note

Recommended Condition
Symbol

IR35-00-3

VP15-00-3

WS60-00-1

–

Caution Do not use different soldering methods together (except for partial heating).

For details of recommended soldering conditions for surface mounting, refer to information document

SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).

Data Sheet P12771EJ2V0DS00

15

µµµµ

PC2757TB,

µµµµ

PC2758TB

ATTENTION

OBSERVE PRECAUTIONS

FOR HANDLING

ELECTROSTATIC

SENSITIVE

DEVICES

NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.

•

The information in this document is current as of June, 2000. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.

•

No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.

•

NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.

•

Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.

•

While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.

•

NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio

and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots

"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)

"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for

NEC (as defined above).

M8E 00. 4