Datasheet UPC2807W Datasheet (NEC)

DATA SHEET

BiCMOS INTEGRATED CIRCUIT

µ

µ

PC2807,2807A

µ µ

PREAMPLIFIER FOR INFRARED REMOTE CONTROLLER

DESCRIPTION

The µ PC2807 and 2807A are semiconductors integrated circuit developed as preamplifiers for the receiver module of
infrared remote controllers. These preamplifiers can be directly connected to a PIN photodiode, and integrate a high-gain
first stage amplifier, limiter, bandpass filter, detector circuit, and waveform-shaping circuit on a single chip.

FEATURES

• Only PIN photodiode required as an external component.

) selectable (five types):

• Following carrier frequencies (f

PC2807 : fO = 32.7, 36.0, 36.7, 37.9 kHz

µ

PC2807A : fO = 40.0 kHz

µ

• Fixed trap frequency

= 54 kHz

T

f

• Active-low output

• Supplied in form of wafer

APPLICATION

• Receiver module of infrared remote controller

ORDERING INFORMATION

Part Number Condition in shipment

PC2807W Wafer

µ

PC2807AW Wafer

µ

Contact an NEC sales representative in advance since a memorandum on product quality need to be prepared for

O

shipment in the form of wafer.

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. S13198EJ1V0DS00 (1st edition)
Date Published May 2000 NS CP (K)
Printed in Japan

The mark ★ shows major revised points.

1998, 2000

BLOCK DIAGRAM

µ

µ

PC2807, 2807A

µ µ

V

CC

PAD1

6

ABLC

First-stage

amplifier

9

IN

I/V

Carrier

elimination

Limiter

amplifier

TRAP

skip

13

PAD5

TRAP

Trimming

circuit

12 11 10

PAD4

PAD3

BPF

3

fO setting

4

S3 S2

Detector

2

1

S1

Waveform-shaping
circuit

22 kΩ

5 OUT

8 7

GND2PAD6

GND1

2

Data Sheet S13198EJ1V0DS00

µ

µ

PC2807, 2807A

µ µ

PAD FUNCTION

Symbol Pad No. Function
V

CC

GND1 7 GND pad (for output transistor)
GND2 8 GND pad (for circuits excluding output transistor)
IN 9 Input pad. Internal impedance is 190 kΩ TYP. PIN photodiode can be directly connected.
OUT 5

S1 1
S2 2
S3 4
PAD1 3 BPF output pad. Parameters such as voltage gain and BPF bandwidth can be tested.

PAD3 10
PAD4 11
PAD5 12
PAD6 13

6 Power pad. Apply a voltage of 5 V ± 10 %. Connect an external smoothing filter if noise on power line

is high.

Output pad. Open-collector output with pull-up resistor (22 kΩ TYP.) To connect pull-up resistor, use
resistor of 10 kΩ or higher.

BPF center frequency setting pads.
Connect pad corresponding to carrier frequency to be used to GND

Do not connect this pad to anything on final assembly.
Test and trimming pads. Do not connect these pads to anything.

Note

.

Note

Connect each of BPF center frequency setting pads as follows depending on the carrier frequency.

• µ PC2807

Carrier Frequency S1 S2 S3

32.7 kHz GND Leave unconnected. Leave unconnected.

36.0 kHz GND GND GND

36.7 kHz Leave unconnected. GND GND

37.9 kHz Leave unconnected. Leave unconnected. Leave unconnected.

PC2807A

•

µ

Carrier Frequency S1 S2 S3

40.0 kHz Leave unconnected. Leave unconnected. Leave unconnected.

Data Sheet S13198EJ1V0DS00

3

µ

µ

PC2807, 2807A

µ µ

ELECTRICAL SPECIFICATIONS

Absolute Maximum Ratings (TA ==== ++++25 ±±±± 3 °°°°C)

Parameter Symbol Ratings Unit
Supply voltage V
Output sink current I
Input voltage V
Storage temperature T

CC

OSINK

IN

stg

Caution Product quality may suffer if the absolute maximum rating is exceeded even momentarily for any

parameter. That is, the absolute maximum ratings are rated values at which the product is on the verge
of suffering physical damage, and therefore the product must be used under conditions that ensure
that the absolute maximum ratings are not exceeded.

5.5 V

2.5 mA

0 to V

CC

−40 to +125 °C

V

Recommended Operating Conditions (T

Parameter Symbol Conditions MIN. TYP. MAX. Unit
Supply voltage V
Operating ambient temperature T

CC

A

A =

= 25 ±±±± 3 °°°°C)

==

4.5 5.0 5.5 V

−25 +25 +80 °C

4

Data Sheet S13198EJ1V0DS00

Electrical Characteristics (TA = ++++25 ±±±± 3 °°°°C, VCC ==== 5 V)

Parameter Symbol Conditions MIN. TYP. MAX. Unit

Circuit current I

Low-level output voltage 1 V
Low-level output voltage 2 V
High-level output voltage V
Voltage gain 1

PC2807

µ

Voltage gain 2

PC2807A

µ

BPF bandwidth f

Output pulse width 1 t

Output pulse width 2 t

A

A

CC

OL1

OL2

OH

v1

v2

BW

BW1

PW2

With no signal applied.
S1. S2, and S3: Leave unconnected.
Without external pull-up resistor − 0.05 0.4 V
With external 10-kΩ pull-up resistor connected − 0.10 0.5 V

S1, S2, and S3: Leave unconnected.,

= 30 dB µ V

IN

V

Note1

S1, S2, and S3: Leave unconnected.,

= 30 dB µ V

IN

V

Note1

−3 dB bandwidth. S1, S2, S3: Leave
unconnected., V

IN

S1, S2, and S3: Leave unconnected.,

= 500 µ V

IN

V

, f = 37.9 kHz

p-p

Burst length: 600
Average value of output from start of signal

input to 60th pulse
S1, S2, and S3: Leave unconnected.,

= 50 mV

V

IN

, f = 37.9 kHz

p-p

Burst length: 600
Average value of output from start of signal

input to 60th pulse

, f 37.9 kHz

, f = 40.0 kHz

= 30 dB µ V

Note3

s, Cycle: 1.2 ms

µ

Note3

s, Cycle: 1.2 ms

µ

Note1

,

µ

µ

PC2807, 2807A

µ µ

1.1 1.5 1.9 mA

4.8 5.0 − V
70 80 86 dB

72 82 88 dB

1.5 3.0 4.5 kHz

400 600 800

s

µ

,

Note2

400 600 800

Note2

s

µ

Notes 1. 30 dB

V = 31.6 µ V

µ

2. Input the following burst signal.

µ

s

3. f = 37.9 kHz for the

r.m.s.

37.9-kHz carrier

µ

µ

s600

s600

600

PC2807. In the µ PC2807A, measurement is at f = 40.0 kHz.

µ

Data Sheet S13198EJ1V0DS00

5

APPLICATION CIRCUIT EXAMPLE (at carrier frequency of 37.9 kHz)

5 V

+

µ

µ

PC2807, 2807A

µ µ

ABLC

IN

9

PIN
Photo­diode

Carrier

elimination

Remark f = 37.9 kHz for the

6

V

CC

First-stage

amplifier

I/V

PC2807. In the µ PC2807A, f = 40.0 kHz.

µ

Limiter

amplifier

TRAP

skip

PAD6

13

TRAP

Trimming

circuit

PAD3

PAD4

PAD5

12 11 10

BPF

3

fO setting

S3 S2

4

PAD1

Detector

S1

2

Waveform-shaping
circuit

1

22 kΩ

8 7

OUTPUT

5

OUT

GND1GND2

6

Data Sheet S13198EJ1V0DS00

µ

µ

PC2807, 2807A

µ µ

NOTES FOR BiCMOS DEVICES

1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS

Note:

Strong electric field, when exposed to a device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred. Environmental control

must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using
insulators that easily build static electricity. Semiconductor devices must be stored and transported
in an anti-static container, static shielding bag or conductive material. All test and measurement
tools including work bench and floor should be grounded. The operator should be grounded using
wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need
to be taken for PW boards with semiconductor devices on it.

2 HANDLING OF UNUSED INPUT PINS

Note:

No connection for device inputs can be cause of malfunction. If no connection is provided to the
input pins, it is possible that an internal input level may be generated due to noise, etc., hence
causing malfunction. Input levels of devices must be fixed high or low by using a pull-up or pull­down circuitry. Each unused pin should be connected to V
considered to have a possibility of being an output pin. All handling related to the unused pins must
be judged device by device and related specifications governing the devices.

DD or GND with a resistor, if it is

3 STATUS BEFORE INITIALIZATION OF BiCMOS DEVICES

Note:

Power-on does not necessarily define initial status of device. Production process of BiCMOS does
not define the initial operation status of the device. Immediately after the power source is turned
ON, the devices with reset function have not yet been initialized. Hence, power-on does not
guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the reset
signal is received. Reset operation must be executed immediately after power-on for devices
having reset function.

Data Sheet S13198EJ1V0DS00

7

µ

µ

PC2807, 2807A

µ µ

•

The information in this document is current as of May, 2000. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.

•

No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.

•

NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.

•

Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.

•

While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.

•

NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio

and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots

"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)

"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for

NEC (as defined above).

M8E 00. 4